Physics Electronics Online Mcqs Test

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Question 1

1. The electrons in the outermost shell of an atom are called

Answer

Free electrons

Answer

Tightly bound electrons

Answer

Valence electrons

Answer

None of these

Question 2

2. Conversion of low input a.c. into high output a.c. is called:

Answer

Rectification

Answer

Magnification

Answer

All of these

Answer

Amplification

Question 3

3. A n-p-n transistor conducts when

Answer

Collector is positive and emitter is at negative potential as the base

Answer

Both collector and emitter are negative with respect to the base

Answer

Both collector and emitter are positive with respect to the base

Answer

Collector is positive and emitter is negative with respect to the base

Question 4

4. N-type crystal is

Answer

Positively charged

Answer

None of these

Answer

Negative charged

Question 5

5. A transistor consists of

Answer

Four PN-junctions

Answer

One PN-junction

Answer

Two PN-junctions

Answer

Three PN-junctions

Question 6

6. Photovoltaic cell produces electrical energy from

Answer

Light energy

Answer

Chemical energy

Answer

Heat energy

Answer

None of these

Question 7

7. The whole structure obtained by the repetition of unit cell is known as

Answer

Crystal lattice

Answer

All of these

Question 8

8. In a PN junction

Answer

Undetermined

Answer

High potential at N side and low potential at P side

Answer

High potential at P side and low potential at N side

Answer

P and N both are at same potential

Question 9

9. Barrier potential of a p-n junction diode does not depend on:

Answer

Forward bias

Answer

Diode design

Answer

Doping density

Answer

Temperature

Question 10

10. A substance which have empty conduction band is called

Answer

None of these

Answer

Semiconductor

Question 11

11. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 12

12. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type conductor

Answer

p-type semiconductor

Answer

p-type conductor

Answer

n-type semiconductor

Question 13

13. When an alternating accelerating field is applied to a charge it produces

Answer

Gamma Rays

Answer

Transverse Waves

Answer

Electromagnetic Waves

Question 14

14. The device or circuit used for conversion of A.C. into D.C. is called

Answer

An amplifier

Answer

Filtering circuit

Answer

A rectifier

Question 15

15. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 16

16. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Increases slowly

Answer

Decreases slowly

Answer

Remain fixed

Answer

Suddenly increases

Question 17

17. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 18

18. At absolute zero, Si acts as

Answer

None of these

Question 19

19. Non-inverting amplifier circuits have

Answer

A low output impedance

Answer

A very high input impedance

Answer

None of these

Answer

A very low input impedance

Question 20

20. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 21

21. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 22

22. n-type semiconductor if formed

Answer

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer

From pure Ge crystal

Answer

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer

From pure Si crystal

Question 23

23. In p-type semiconductor

Answer

The number of mobile holes exceeds the number of acceptors

Answer

Major current carrier is electrons

Answer

Major carrier is mobile holes

Answer

Major carrier is mobile negative ions

Question 24

24. In a P-type semiconductor

Answer

Major current carriers are mobile holes

Answer

Major current carriers are electrons

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile negative ions

Question 25

25. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 26

26. The part of a transistor which is heavily doped to produce large number of majority carriers is

Answer

Any of the above depending on nature of transistor

Question 27

27. In a semiconductor, the mobility of holes is

Answer

Greater than electrons

Answer

Equal to electrons

Answer

Less than electrons

Question 28

28. When arsenic is added as an impurity to silicon, the resulting material is

Answer

None of these

Answer

N-type semiconductor

Answer

N-type conductor

Answer

P-type semiconductor

Question 29

29. Which one is reverse-biased?

Question 30

30. Using OP-Amp as an inverting amplifier, the non-inverting terminal has potential

Answer

None of these

Question 31

31. The positive sign of gain indicates that

Answer

Input and out signals are in phase

Answer

None of these

Answer

May be in phase or not

Answer

Input and out signals are not in phase

Question 32

32. In semiconductors at a room temperature

Answer

The conduction band is completely empty

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is completely filled

Answer

The valence band is partially empty and the conduction band is partially filled

Question 33

33. When we apply reverse bias to a junction diode, it

Answer

Lowers the potential barrier

Answer

Raises the potential barrier

Answer

Increase the majority carrier current

Answer

Increase the minority carrier current

Question 34

34. Reverse bias applied on a junction diode

Answer

Increases the majority carrier current

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Question 35

35. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 36

36. Polythene, potystrene and nylon are examples of

Answer

Crystalline solids

Answer

Polymeric solids

Answer

Amorphous solids

Answer

Glassy solids

Question 37

37. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

Forbidden energy states

Answer

Band levels

Answer

None of these

Answer

Hidden energy states

Question 38

38. The ratio of tensile stress to tensile strain is called

Answer

None of these

Answer

Bulk’s modulus

Answer

Young’s modulus

Answer

Modulus of electricity

Question 39

39. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 40

40. In a n-p-n transistor:

Answer

Negative charge moves from collector to base

Answer

Holes move from emitter to base

Answer

Holes move from base to collector

Answer

Negative charge moves from emitter to base

Question 41

41. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Copper increases and germanium decreases

Answer

Copper decreases and germanium increases

Answer

Each of them decreases

Answer

Each of them increases

Question 42

42. In half wave rectification

Answer

Current flows in pulses

Answer

Current flows in one directions

Answer

None of these

Answer

Only half cycle is used

Question 43

43. Semi-conductor germanium and silicon are

Answer

Pentavalent

Answer

Tetravalent

Question 44

44. Application of photodiode is/are

Answer

Automatic switching

Answer

Detection of visible and invisible radiations

Answer

None of these

Answer

Logic gates

Question 45

45. Transistors with various combinations are widely used as switches in:

Answer

Transformers

Answer

Electric motors

Answer

Electric generations

Question 46

46. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 47

47. When a strength changes the length of a body, it is called

Answer

None of these

Answer

Compress ional stress

Answer

Tensile stress

Answer

Shear stress

Question 48

48. The semiconductor diode can be used as a rectifier because _

Answer

Its conductivity increases with rise of temperature

Answer

It has low resistance to the current flow when forward biased

Answer

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer

It has high resistance to the current flow when reverse biased

Question 49

49. In insulators

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Question 50

50. When NPN transistor is used as an amplifier

Answer

Holes move from base to emitter

Answer

Electrons move from collector to base

Answer

Electrons move from emitter to base

Answer

Electrons move from base to emitter

Question 51

51. In a p-type semiconductor germanium is doped with:

Answer

All of above

Question 52

52. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

Or gates and NOT gates

Answer

OR gates only

Answer

AND gates, OR gates, and NOT gates

Answer

AND gates and NOT gates

Question 53

53. Light emitting diode work when it is

Answer

Reverse biased

Answer

None of these

Answer

Forward biases

Question 54

54. Semi-conductors with donor atoms and free electrons belong to the type

Answer

any of above

Question 55

55. In a good conductor, the energy gap between the conduction band and the valence band is

Question 56

56. In n-type substances, the minority carriers are

Answer

None of these

Question 57

57. At room temperature, a p-type semi-conductor has

Answer

Large number of free electrons and few holes

Answer

Equal number of free electrons and holes

Answer

Large number of holes and electrons

Answer

Large number of holes and few electrons

Question 58

58. The gain A of the amplifier is of the order of

Answer

None of these

Answer

Man hundred

Question 59

59. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 60

60. The forward resistance of the diode is

Answer

None of these

Question 61

61. Acceptor and donor impurities donate

Answer

n-carriers only

Answer

p-carriers and n-carriers respectively

Answer

p-carriers only

Answer

n-carriers and p-carriers respectively

Question 62

62. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 63

63. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is maximum

Answer

Potential is maximum

Answer

Potential is zero

Answer

Electric field is zero

Question 64

64. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Answer 179

Resistance of copper increases while that of germanium decreases

Answer 180

Resistance of both increases

Answer 181

Resistance of both decreases

Answer 182

Resistance of copper decreases while that of germanium increases

Answer 183

Switching device

Answer 184

P-type material

Answer 185

Both are at the high potential

Answer 186

Inverting terminal is at high potential

Answer 187

Both are at the same potential

Answer 188

Non-inverting terminal is at high potential

Answer 189

Almost zero

Answer 190

None of these

Answer 191

Decreases and then increases

Answer 192

Remains unchanged

Answer 193

Young’s modulus

Answer 194

Bulk modulus

Answer 195

Shear modulus

Answer 196

None of these

Answer 197

Oscillator

Answer 198

Multivibrator

Answer 199

If either input is zero

Answer 200

If both inputs are zero

Answer 201

Only if both inputs are 1

Answer 202

If either or both inputs are 1

Answer 203

Conductors

Answer 204

Insulators

Answer 205

Semiconductors

Answer 206

Superconductors

Answer 207

None of these

Answer 208

Can be any of the above three

Answer 209

Semiconductor

Answer 210

Superconductor

Answer 211

None of these

Answer 212

Nanosecond

Answer 213

None of these

Answer 214

Microsecond

Answer 215

Millisecond

Answer 216

Require more current

Answer 217

None of these

Answer 218

Works efficiently

Answer 219

Input resistance

Answer 220

None of these

Answer 221

Voltage gain

Answer 222

Current gain

Answer 223

Logic gates

Answer 224

Oscillator

Answer 225

None of these

Answer 226

The valence band is completely filled

Answer 227

The valence band is completely filled and the conduction band is partially filled

Answer 228

The conduction band is completely empty

Answer 229

The valence band is partially empty and the conduction band is partially filled

Answer 230

Holes move from emitter to base

Answer 231

Negative charge moves from collector to base

Answer 232

Holes move from base to collector

Answer 233

Negative charge moves from emitter to base

Answer 234

Can be any of the above three

Answer 235

n-type conductor

Answer 236

p-type conductor

Answer 237

n-type semiconductor

Answer 238

p-type semiconductor

Answer 239

Point from north to south

Answer 240

Is locate on the collector

Answer 241

Is located on the base

Answer 242

Is located on the emitter

Answer 243

Under reverse bias

Answer 244

Under forward bias

Answer 245

When temperature varies

Answer 246

During the manufacturing process

Answer 247

70 x 10 Nm¯²

Answer 248

91 x 10 Nm¯²

Answer 249

110 Nm¯²

Answer 250

None of these

Answer 251

Holes move from emitter be base

Answer 252

Holes move from base to emitter

Answer 253

Holes move from emitter to base

Answer 254

Electrons move from base to collector

Answer 255

Enable it to Telerate higher voltage

Answer 256

Increase its life

Answer 257

Increase its electrical resistivity

Answer 258

Increase its electrical conductivity

Answer 259

Opposes the input signal

Answer 260

Aids the input signal

Answer 261

Is proportional to differential voltage gain

Answer 262

Is proportional to output current

Answer 263

Light display

Answer 264

None of these

Answer 265

Detection of light

Answer 266

Emission of light

Answer 267

None of these

Answer 268

Resistor is used

Answer 269

Solvent is used

Answer 270

Capacitor is used

Answer 271

Potential barrier in depletion layer increases

Answer 272

Diode is forward based

Answer 273

Diode is reverse biased

Answer 274

Potential barrier in depletion layer remains unchanged

Answer 275

Extra electrons

Answer 276

Missing of electrons

Answer 277

Virtual input

Answer 278

Reference voltage on the other

Answer 279

Non-inverting voltage at output

Answer 280

Greater than emitter current

Answer 281

Equal to emitter current

Answer 282

Any of above

Answer 283

Slightly less than emitter current

Answer 284

None of these

Answer 285

Diode is forward biased

Answer 286

Diode is neutralized

Answer 287

Diode is reverse biased

Answer 288

None of these

Answer 289

Both A.C. & D.C.

Answer 290

None of these

Answer 291

Diffusion region

Answer 292

Charged region

Answer 293

Depletion region

Answer 294

n-type semiconductor

Answer 295

p-type semiconductor

Answer 296

p-type conductor

Answer 297

n-type conductor

Answer 298

Electrons move from base to collector

Answer 299

Holes move from emitter to base

Answer 300

Holes move from base to emitter

Answer 301

Holes move from emitter to base

Answer 302

The light emitting diode

Answer 303

Solar cells

Answer 304

The photo diodes

Answer 305

The switch

Answer 306

Major current carriers are electrons

Answer 307

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 308

Major current carriers are mobile negative ions

Answer 309

Major current carriers are mobile holes

Answer 310

Increase the minority carrier current

Answer 311

Increases the majority carrier current

Answer 312

Lowers the potential barrier

Answer 313

Raises the potential barrier

Answer 314

Oscillator

Answer 315

P-type material

Answer 316

Phosphorus

Answer 317

Half wave rectifier

Answer 318

Full wave rectifier

Answer 319

None of these

Answer 320

In forward bias

Answer 321

In reverse bias

Answer 322

Holes and electrons

Answer 323

Electrons and holes

Answer 324

Protons and electrons

Answer 325

Electrons and protons

Answer 326

Variable amplitude

Answer 327

Unit amplitude

Answer 328

Zero amplitude

Answer 329

Constant amplitude

Answer 330

A.C. into D.C.

Answer 331

Low voltage to high voltage

Answer 332

High voltage to low voltage

Answer 333

D.C. into A.C.

Answer 334

Increased by forward biasing

Answer 335

Is independent of voltage

Answer 336

Increased by reverse biasing

Answer 337

Decreased by reverse biasing

Answer 338

At least one input is LOW

Answer 339

At least one input is HIGH

Answer 340

All inputs are HIGH

Answer 341

All inputs are LOW

Answer 342

Increase its electrical resistivity

Answer 343

Increase its life

Answer 344

Increases its electrical conductivity

Answer 345

Enable it to Telerate higher voltage

Answer 346

Copper increases and germanium decreases

Answer 347

Each of them increases

Answer 348

Copper decreases and germanium increases

Answer 349

Each of them decreases

Answer 350

Suppressing the harmonics in A.C voltage

Answer 351

Using a transistor

Answer 352

Suppressing half wave of A.C supply by using diode

Answer 353

Using a Coolidge tube

Answer 354

High voltage to low voltage

Answer 355

Low voltage to high voltage

Answer 356

A.C. into D.C.

Answer 357

D.C. into A.C.

Answer 358

Three diodes in common

Answer 359

Step up transformer

Answer 360

Triode vacuum tube

Answer 361

Step down transformer

Answer 362

All of these

Answer 363

That the emitter be heated

Answer 364

None of these

Answer 365

That the base be heated

Answer 366

That the collector be heated

Answer 367

Free electrons in n-type and holes in p-type

Answer 368

Free electrons in n-type and p-type

Answer 369

Holes in n-type and p-type

Answer 370

Holes in n-type and free electrons in p-type

Answer 371

Mobile ions

Answer 372

Immobile ions

Answer 373

Comparator

Answer 374

INVERTER gate

Answer 375

P-type material

Answer 376

Super conductor

Answer 377

N-type material

Answer 378

Semiconductor

Answer 379

Conduction band is partially filled with electrons

Answer 380

Conduction band is empty and valence band is filled with electrons

Answer 381

Valence band is partially filled with electrons

Answer 382

Conduction band is filled with electrons and valence band is empty

Answer 383

Remains constant

Answer 384

First A and B

Answer 385

Phosphorus

Answer 386

Semiconductors

Answer 387

Insulators

Answer 388

Superconductors

Answer 389

Light dependent resistance

Answer 390

Low degree radiations

Answer 391

Low degree resistor

Answer 392

None of these

Answer 393

Common emitter configuration

Answer 394

Common base configuration

Answer 395

None of these

Answer 396

Common collector configuration

Answer 397

Minority carriers

Answer 398

Dual carriers

Answer 399

Majority carriers

Answer 400

Electric field is zero

Answer 401

Electric field is maximum

Answer 402

Potential is maximum

Answer 403

Potential is zero

Answer 404

Both drift and diffusion of charges

Answer 405

Diffusion of charges

Answer 406

Drift of charges

Answer 407

Depends upon the nature of material

Answer 408

It offers a very low output resistance

Answer 409

It offers a very high inputs resistance to the input current

Answer 410

It offers a very low open loop gain all of above

Answer 411

None of these

Answer 412

Missing electrons

Answer 413

Extra electrons

Answer 414

Equal number of free electrons and holes

Answer 415

Large number of holes and few electrons

Answer 416

Large number of free electrons and few holes

Answer 417

Large number of holes and electrons

Answer 418

Any of above

Answer 419

Decreased by reverse biasing

Answer 420

Is independent of voltage

Answer 421

Increased by forward biasing

Answer 422

Increased by reverse biasing

Answer 423

None of these

Answer 424

No Phase shift

Answer 425

90° Phase shift

Answer 426

180° Phase shift

Answer 427

120° Phase shift

Answer 428

Potential barrier is reduced to zero

Answer 429

Forward bias exceeds certain value

Answer 430

Forward current exceeds certain value

Answer 431

Reverse bias exceeds certain value

Answer 432

Oscillator

Answer 433

Not a universal gate

Answer 434

A universal gate

Answer 435

A basic universal gate

Answer 436

A basic gate

Answer 437

Either emitter or collector

Answer 438

None of these

Answer 439

Off switch

Answer 440

Zero biased

Answer 441

Reversed biased

Answer 442

Forward biased

Answer 443

None of these

Answer 444

None of these

Answer 445

HIGH inputs and a HIGH output

Answer 446

LOW inputs and a LOW output

Answer 447

LOW inputs and a HIGH output

Answer 448

Remains same

Answer 449

Insulators

Answer 450

Semiconductors

Answer 451

Superconductors

Answer 452

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 453

Both junctions are reverse biased

Answer 454

No bias voltages are required

Answer 455

Both junctions are forward biased

Answer 456

10¯⁶ cm

Answer 457

10¯¹² cm

Answer 458

Very small as compared to the thickness of emitter and collector

Answer 459

Thickness of emitter

Answer 460

Mean of thickness of emitter and collector

Answer 461

Thickness of collector

Answer 462

Greater than one

Answer 463

Equal to one

Answer 464

Less than one

Answer 465

Number of electrons increases while that of holes decreases

Answer 466

Number of holes increases while that of holes decreases

Answer 467

Number of electrons and holes remains same

Answer 468

Number of electrons and holes increases equally

Answer 469

Several mega ohms

Answer 470

Oscillator

Answer 471

Logic gates

Answer 472

None of these

Answer 473

may be p-type or n-type

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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