Physics Electronics Online Mcqs Test

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Question 1

1. The switch is open when the resistance between C and E becomes

Answer

Almost zero

Answer

None of these

Question 2

2. The width of a depletion layer in a p-n junction is

Answer

Increased by forward biasing

Answer

Increased by reverse biasing

Answer

Is independent of voltage

Answer

Decreased by reverse biasing

Question 3

3. If on increasing temperature the resistance decreases, then it is

Answer

Semiconductor

Answer

Superconductor

Answer

None of these

Question 4

4. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is maximum

Answer

Potential is maximum

Answer

Potential is zero

Answer

Electric field is zero

Question 5

5. Reverse bias applied on a junction diode

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Answer

Increases the majority carrier current

Question 6

6. When n-p-n transistor is used as an amplifier

Answer

Electrons move from base to collector

Answer

Holes move from base to emitter

Answer

Holes move from emitter to base

Answer

Holes move from emitter be base

Question 7

7. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Copper increases and germanium decreases

Answer

Each of them increases

Answer

Each of them decreases

Answer

Copper decreases and germanium increases

Question 8

8. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

p-type conductor

Answer

n-type conductor

Answer

p-type semiconductor

Question 9

9. Photodiode is used for

Answer

Emission of light

Answer

Detection of light

Answer

Light display

Answer

None of these

Question 10

10. In insulators

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Conduction band is partially filled with electrons

Question 11

11. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increases its electrical conductivity

Answer

Enable it to Telerate higher voltage

Answer

Increase its life

Answer

Increase its electrical resistivity

Question 12

12. The part of a transistor, which is heavily doped to produce a large number of majority carriers, is

Answer

None of these

Question 13

13. In a n-p-n transistor:

Answer

Holes move from base to collector

Answer

Negative charge moves from collector to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from emitter to base

Question 14

14. The simplest type of rectification known as half wave rectification is obtained by

Answer

Using a transistor

Answer

Using a Coolidge tube

Answer

Suppressing half wave of A.C supply by using diode

Answer

Suppressing the harmonics in A.C voltage

Question 15

15. Depletion region of a junction is formed

Answer

Under reverse bias

Answer

During the manufacturing process

Answer

When temperature varies

Answer

Under forward bias

Question 16

16. In reverse biasing of p-n junction, the resistance offered by the diode is of the order of

Answer

Several mega ohms

Question 17

17. The electrical circuit used to have smooth DC output from a rectifier circuit is called

Answer

Oscillator

Answer

Logic gates

Question 18

18. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 19

19. The ratio β shows the

Answer

None of these

Answer

Input resistance

Answer

Current gain

Answer

Voltage gain

Question 20

20. The part of a transistor which is heavily doped to produce large number of majority carriers is

Answer

Any of the above depending on nature of transistor

Question 21

21. In a semiconductor, the mobility of holes is

Answer

Equal to electrons

Answer

Greater than electrons

Answer

Less than electrons

Question 22

22. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 23

23. A diode as a rectifier converts:

Answer

D.C. into A.C.

Answer

A.C. into D.C.

Answer

Low voltage to high voltage

Answer

High voltage to low voltage

Question 24

24. Which is normal used of transistor?

Answer

P-type material

Answer

Switching device

Question 25

25. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 26

26. Acceptor and donor impurities donate

Answer

n-carriers and p-carriers respectively

Answer

p-carriers and n-carriers respectively

Answer

n-carriers only

Answer

p-carriers only

Question 27

27. The least doped region in a transistor is

Question 28

28. NAND gate is

Answer

A universal gate

Answer

A basic gate

Answer

A basic universal gate

Answer

Not a universal gate

Question 29

29. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Holes and electrons

Answer

Protons and electrons

Answer

Electrons and protons

Answer

Electrons and holes

Question 30

30. A transistor consists of

Answer

One PN-junction

Answer

Two PN-junctions

Answer

Four PN-junctions

Answer

Three PN-junctions

Question 31

31. Electrons present in p-type material due to thermal pair generation are

Answer

Majority carriers

Answer

Minority carriers

Answer

Dual carriers

Question 32

32. The electrons in the outermost shell of an atom are called

Answer

None of these

Answer

Free electrons

Answer

Valence electrons

Answer

Tightly bound electrons

Question 33

33. To use a transistor as an amplifier

Answer

Both junctions are reverse biased

Answer

No bias voltages are required

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

Both junctions are forward biased

Question 34

34. The width of a depletion layer in a p-n junction is

Answer

Decreased by reverse biasing

Answer

Increased by reverse biasing

Answer

Is independent of voltage

Answer

Increased by forward biasing

Question 35

35. The energy band gap is maximum in

Answer

Insulators

Answer

Semiconductors

Answer

Superconductors

Question 36

36. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 37

37. Diode can work as

Answer

Multivibrator

Answer

Oscillator

Question 38

38. Arsenic, antimony or phosphorus are impurities of

Answer

may be p-type or n-type

Answer

None of these

Question 39

39. When we apply reverse bias to a junction diode, it

Answer

Increase the majority carrier current

Answer

Lowers the potential barrier

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Question 40

40. The units of modulus of elasticity are same as that of

Answer

None of these

Question 41

41. In a p-type semiconductor germanium is doped with:

Answer

All of these

Question 42

42. In a junction diode, the holes are due to

Answer

Missing of electrons

Answer

Extra electrons

Question 43

43. In a P-type semiconductor

Answer

Major current carriers are electrons

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are mobile holes

Question 44

44. In forward bias, the width of potential barrier in a p-n junction diode

Answer

Remains constant

Answer

First A and B

Question 45

45. Non-inverting amplifier circuits have

Answer

A low output impedance

Answer

A very high input impedance

Answer

None of these

Answer

A very low input impedance

Question 46

46. In semiconductors at a room temperature

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is completely filled

Answer

The conduction band is completely empty

Answer

The valence band is partially empty and the conduction band is partially filled

Question 47

47. Transistor can be used as

Answer

Half wave rectifier

Answer

Full wave rectifier

Question 48

48. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 49

49. A photodiode can turn its current ON and OFF in

Answer

Millisecond

Answer

Nanosecond

Answer

None of these

Answer

Microsecond

Question 50

50. The forward resistance of the diode is

Answer

None of these

Question 51

51. In a n-p-n transistor:

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Answer

Negative charge moves from collector to base

Answer

Negative charge moves from emitter to base

Question 52

52. In n-p-n transistor, p works as

Answer

Any of above

Question 53

53. In Germanium crystal, impurity donor elements have valiancy

Question 54

54. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

None of these

Answer

Hidden energy states

Answer

Band levels

Answer

Forbidden energy states

Question 55

55. The potential difference across the depletion region of silicon is

Question 56

56. A substance which have empty conduction band is called

Answer

None of these

Answer

Semiconductor

Question 57

57. When n-p-n transistor is used as an amplifier,

Answer

Holes move from emitter to base

Answer

Holes move from emitter to base

Answer

Electrons move from base to collector

Answer

Holes move from base to emitter

Question 58

58. When n-type of semiconductor is heated,

Answer

Number of electrons increases while that of holes decreases

Answer

Number of electrons and holes remains same

Answer

Number of holes increases while that of holes decreases

Answer

Number of electrons and holes increases equally

Question 59

59. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 60

60. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 61

61. The basic logic gate whose output is the complement of the input is the:

Answer

Comparator

Answer

INVERTER gate

Question 62

62. Depletion layer consists of

Answer

Immobile ions

Answer

Mobile ions

Question 63

63. In p-type semiconductor

Answer

Major carrier is mobile negative ions

Answer

The number of mobile holes exceeds the number of acceptors

Answer

Major current carrier is electrons

Answer

Major carrier is mobile holes

Question 64

64. A junction between p-type material and n-type material is called as

Answer

Transistor

Answer 172

Conduction band is filled with electrons and valence band is empty

Answer 173

Valence band is partially filled with electrons

Answer 174

Conduction band is empty and valence band is filled with electrons

Answer 175

Conduction band is partially filled with electrons

Answer 176

All of above

Answer 177

None of these

Answer 178

Man hundred

Answer 179

None of these

Answer 180

Unit amplitude

Answer 181

Zero amplitude

Answer 182

Variable amplitude

Answer 183

Constant amplitude

Answer 184

Both collector and emitter are negative with respect to the base

Answer 185

Both collector and emitter are positive with respect to the base

Answer 186

Collector is positive and emitter is at negative potential as the base

Answer 187

Collector is positive and emitter is negative with respect to the base

Answer 188

The photo diodes

Answer 189

The light emitting diode

Answer 190

Solar cells

Answer 191

The switch

Answer 192

Common collector configuration

Answer 193

Common base configuration

Answer 194

Common emitter configuration

Answer 195

None of these

Answer 196

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 197

Its conductivity increases with rise of temperature

Answer 198

It has low resistance to the current flow when forward biased

Answer 199

It has high resistance to the current flow when reverse biased

Answer 200

Works efficiently

Answer 201

None of these

Answer 202

Require more current

Answer 203

Pentavalent

Answer 204

Tetravalent

Answer 205

Can be any of the above three

Answer 206

Virtual input

Answer 207

Non-inverting voltage at output

Answer 208

Reference voltage on the other

Answer 209

Off switch

Answer 210

NAND gates

Answer 211

Phosphorus

Answer 212

Raises the potential barrier

Answer 213

Increases the majority carrier current

Answer 214

Lowers the potential barrier

Answer 215

Increase the minority carrier current

Answer 216

p-type semiconductor

Answer 217

n-type semiconductor

Answer 218

p-type conductor

Answer 219

n-type conductor

Answer 220

Greater than one

Answer 221

Less than one

Answer 222

Equal to one

Answer 223

Charged region

Answer 224

Depletion region

Answer 225

Diffusion region

Answer 226

None of these

Answer 227

Forward biases

Answer 228

None of these

Answer 229

Reverse biased

Answer 230

None of these

Answer 231

Both A.C. & D.C.

Answer 232

It offers a very low output resistance

Answer 233

None of these

Answer 234

It offers a very low open loop gain all of above

Answer 235

It offers a very high inputs resistance to the input current

Answer 236

Increase its electrical resistivity

Answer 237

Increase its life

Answer 238

Increase its electrical conductivity

Answer 239

Enable it to Telerate higher voltage

Answer 240

Superconductor

Answer 241

The valence band is completely filled

Answer 242

The conduction band is completely empty

Answer 243

The valence band is completely filled and the conduction band is partially filled

Answer 244

The valence band is partially empty and the conduction band is partially filled

Answer 245

Major current carriers are mobile holes

Answer 246

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 247

Major current carriers are mobile negative ions

Answer 248

Major current carriers are electrons

Answer 249

Shear stress

Answer 250

Tensile stress

Answer 251

Compress ional stress

Answer 252

None of these

Answer 253

Conductors

Answer 254

Semiconductors

Answer 255

Superconductors

Answer 256

Insulators

Answer 257

If both inputs are zero

Answer 258

If either or both inputs are 1

Answer 259

If either input is zero

Answer 260

Only if both inputs are 1

Answer 261

N-type semiconductor

Answer 262

N-type conductor

Answer 263

None of these

Answer 264

P-type semiconductor

Answer 265

Semiconductor

Answer 266

None of these

Answer 267

High potential at P side and low potential at N side

Answer 268

High potential at N side and low potential at P side

Answer 269

Undetermined

Answer 270

P and N both are at same potential

Answer 271

Low degree resistor

Answer 272

Light dependent resistance

Answer 273

Low degree radiations

Answer 274

None of these

Answer 275

All of these

Answer 276

Amplification

Answer 277

Rectification

Answer 278

Magnification

Answer 279

Semiconductor

Answer 280

N-type material

Answer 281

Super conductor

Answer 282

P-type material

Answer 283

None of these

Answer 284

Shear modulus

Answer 285

Bulk modulus

Answer 286

Young’s modulus

Answer 287

Large number of holes and few electrons

Answer 288

Large number of holes and electrons

Answer 289

Large number of free electrons and few holes

Answer 290

Equal number of free electrons and holes

Answer 291

Oscillator

Answer 292

Logic gates

Answer 293

Heat energy

Answer 294

None of these

Answer 295

Chemical energy

Answer 296

Light energy

Answer 297

Electric motors

Answer 298

Transformers

Answer 299

Electric generations

Answer 300

Almost negligible

Answer 301

Depends upon the nature of material

Answer 302

Diffusion of charges

Answer 303

Drift of charges

Answer 304

Both drift and diffusion of charges

Answer 305

Phosphorus

Answer 306

None of these

Answer 307

That the emitter be heated

Answer 308

That the base be heated

Answer 309

That the collector be heated

Answer 310

Automatic switching

Answer 311

None of these

Answer 312

Logic gates

Answer 313

Detection of visible and invisible radiations

Answer 314

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 315

From pure Ge crystal

Answer 316

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 317

From pure Si crystal

Answer 318

Holes in n-type and free electrons in p-type

Answer 319

Free electrons in n-type and p-type

Answer 320

Holes in n-type and p-type

Answer 321

Free electrons in n-type and holes in p-type

Answer 322

Oscillator

Answer 323

P-type material

Answer 324

Increases slowly

Answer 325

Remain fixed

Answer 326

Decreases slowly

Answer 327

Suddenly increases

Answer 328

Both are at the high potential

Answer 329

Non-inverting terminal is at high potential

Answer 330

Inverting terminal is at high potential

Answer 331

Both are at the same potential

Answer 332

Oscillator

Answer 333

None of these

Answer 334

AND gates, OR gates, and NOT gates

Answer 335

OR gates only

Answer 336

Or gates and NOT gates

Answer 337

AND gates and NOT gates

Answer 338

Slightly less than emitter current

Answer 339

Any of above

Answer 340

Equal to emitter current

Answer 341

Greater than emitter current

Answer 342

Positively charged

Answer 343

Negative charged

Answer 344

None of these

Answer 345

Filtering circuit

Answer 346

A rectifier

Answer 347

An amplifier

Answer 348

Resistor is used

Answer 349

None of these

Answer 350

Capacitor is used

Answer 351

Solvent is used

Answer 352

None of these

Answer 353

Current flows in pulses

Answer 354

Current flows in one directions

Answer 355

Only half cycle is used

Answer 356

Potential is maximum

Answer 357

Electric field is maximum

Answer 358

Potential is zero

Answer 359

Electric field is zero

Answer 360

10¯⁶ cm

Answer 361

10¯¹² cm

Answer 362

Either emitter or collector

Answer 363

Large number of holes and electrons

Answer 364

Large number of holes and few electrons

Answer 365

Large number of free electrons and few holes

Answer 366

Equal number of free electrons and holes

Answer 367

Decreases and then increases

Answer 368

Remains unchanged

Answer 369

Diode is neutralized

Answer 370

Diode is reverse biased

Answer 371

Diode is forward biased

Answer 372

None of these

Answer 373

None of these

Answer 374

Electrons move from collector to base

Answer 375

Holes move from base to emitter

Answer 376

Electrons move from emitter to base

Answer 377

Electrons move from base to emitter

Answer 378

Point from north to south

Answer 379

Is located on the emitter

Answer 380

Is located on the base

Answer 381

Is locate on the collector

Answer 382

At least one input is HIGH

Answer 383

All inputs are HIGH

Answer 384

All inputs are LOW

Answer 385

At least one input is LOW

Answer 386

Crystal lattice

Answer 387

All of these

Answer 388

Very small as compared to the thickness of emitter and collector

Answer 389

Thickness of emitter

Answer 390

Thickness of collector

Answer 391

Mean of thickness of emitter and collector

Answer 392

D.C. into A.C.

Answer 393

Low voltage to high voltage

Answer 394

A.C. into D.C.

Answer 395

High voltage to low voltage

Answer 396

Superconductors

Answer 397

Insulators

Answer 398

Semiconductors

Answer 399

Aids the input signal

Answer 400

Is proportional to differential voltage gain

Answer 401

Opposes the input signal

Answer 402

Is proportional to output current

Answer 403

Each of them decreases

Answer 404

Copper decreases and germanium increases

Answer 405

Each of them increases

Answer 406

Copper increases and germanium decreases

Answer 407

Doping density

Answer 408

Diode design

Answer 409

Forward bias

Answer 410

Temperature

Answer 411

Can be any of the above three

Answer 412

p-type conductor

Answer 413

n-type conductor

Answer 414

p-type semiconductor

Answer 415

n-type semiconductor

Answer 416

Step up transformer

Answer 417

Three diodes in common

Answer 418

Triode vacuum tube

Answer 419

Step down transformer

Answer 420

LOW inputs and a LOW output

Answer 421

LOW inputs and a HIGH output

Answer 422

None of these

Answer 423

HIGH inputs and a HIGH output

Answer 424

Forward bias exceeds certain value

Answer 425

Forward current exceeds certain value

Answer 426

Reverse bias exceeds certain value

Answer 427

Potential barrier is reduced to zero

Answer 428

Young’s modulus

Answer 429

Bulk’s modulus

Answer 430

None of these

Answer 431

Modulus of electricity

Answer 432

Extra electrons

Answer 433

Missing electrons

Answer 434

Missing electrons

Answer 435

Extra electrons

Answer 436

None of these

Answer 437

In reverse bias

Answer 438

None of these

Answer 439

In forward bias

Answer 440

Electromagnetic Waves

Answer 441

Gamma Rays

Answer 442

Transverse Waves

Answer 443

Phosphorus

Answer 444

Remains same

Answer 445

any of above

Answer 446

Diode is reverse biased

Answer 447

Diode is forward based

Answer 448

Potential barrier in depletion layer increases

Answer 449

Potential barrier in depletion layer remains unchanged

Answer 450

Polymeric solids

Answer 451

Amorphous solids

Answer 452

Crystalline solids

Answer 453

Glassy solids

Answer 454

Resistance of copper increases while that of germanium decreases

Answer 455

Resistance of both decreases

Answer 456

Resistance of copper decreases while that of germanium increases

Answer 457

Resistance of both increases

Answer 458

None of these

Answer 459

Reversed biased

Answer 460

Forward biased

Answer 461

Zero biased

Answer 462

91 x 10 Nm¯²

Answer 463

70 x 10 Nm¯²

Answer 464

None of these

Answer 465

110 Nm¯²

Answer 466

No Phase shift

Answer 467

90° Phase shift

Answer 468

120° Phase shift

Answer 469

180° Phase shift

Answer 470

May be in phase or not

Answer 471

Input and out signals are not in phase

Answer 472

Input and out signals are in phase

Answer 473

None of these

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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