Physics Electronics Online Mcqs Test

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Question 1

1. Which of the following is not characteristic of an op—amp

Answer

None of these

Answer

It offers a very high inputs resistance to the input current

Answer

It offers a very low open loop gain all of above

Answer

It offers a very low output resistance

Question 2

2. Photovoltaic cell produces electrical energy from

Answer

Heat energy

Answer

Chemical energy

Answer

Light energy

Answer

None of these

Question 3

3. Electrons present in p-type material due to thermal pair generation are

Answer

Dual carriers

Answer

Minority carriers

Answer

Majority carriers

Question 4

4. Identify the correct statement about minority carriers

Answer

Free electrons in n-type and holes in p-type

Answer

Free electrons in n-type and p-type

Answer

Holes in n-type and p-type

Answer

Holes in n-type and free electrons in p-type

Question 5

5. In a junction diode, the holes are due to

Answer

Missing of electrons

Answer

Extra electrons

Question 6

6. When the output of OR gate is 1

Answer

If both inputs are zero

Answer

Only if both inputs are 1

Answer

If either input is zero

Answer

If either or both inputs are 1

Question 7

7. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 8

8. When arsenic is added as an impurity to silicon, the resulting material is

Answer

None of these

Answer

P-type semiconductor

Answer

N-type semiconductor

Answer

N-type conductor

Question 9

9. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increase its electrical resistivity

Answer

Increases its electrical conductivity

Answer

Enable it to Telerate higher voltage

Answer

Increase its life

Question 10

10. When we apply reverse bias to a junction diode, it

Answer

Lowers the potential barrier

Answer

Increase the majority carrier current

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Question 11

11. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical resistivity

Answer

Increase its electrical conductivity

Answer

Increase its life

Question 12

12. At room temperature, a p-type semi-conductor has

Answer

Large number of holes and electrons

Answer

Large number of holes and few electrons

Answer

Equal number of free electrons and holes

Answer

Large number of free electrons and few holes

Question 13

13. The forward resistance of the diode is

Answer

None of these

Question 14

14. The whole structure obtained by the repetition of unit cell is known as

Answer

All of these

Answer

Crystal lattice

Question 15

15. In forward bias, the width of potential barrier in a p-n junction diode

Answer

Remains constant

Answer

First A and B

Question 16

16. To use a transistor as an amplifier

Answer

Both junctions are reverse biased

Answer

No bias voltages are required

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

Both junctions are forward biased

Question 17

17. The materials in which valence band and conduction band overlap are called

Answer

Conductors

Answer

Semiconductors

Answer

Superconductors

Answer

Insulators

Question 18

18. When a strength changes the length of a body, it is called

Answer

Compress ional stress

Answer

Shear stress

Answer

Tensile stress

Answer

None of these

Question 19

19. The p-n junction diode works as insulator, if connected

Answer

In reverse bias

Answer

None of these

Answer

In forward bias

Question 20

20. A substance which have empty conduction band is called

Answer

Semiconductor

Answer

None of these

Question 21

21. The working of transistor as amplifier is similar to

Answer

Step down transformer

Answer

Three diodes in common

Answer

Step up transformer

Answer

Triode vacuum tube

Question 22

22. Photodiode is used for

Answer

Light display

Answer

Detection of light

Answer

None of these

Answer

Emission of light

Question 23

23. Application of photodiode is/are

Answer

Automatic switching

Answer

None of these

Answer

Logic gates

Answer

Detection of visible and invisible radiations

Question 24

24. In a semiconductor, the mobility of holes is

Answer

Equal to electrons

Answer

Greater than electrons

Answer

Less than electrons

Question 25

25. If on increasing temperature the resistance decreases, then it is

Answer

Semiconductor

Answer

Superconductor

Answer

None of these

Question 26

26. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 27

27. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 28

28. The positive sign of gain indicates that

Answer

Input and out signals are in phase

Answer

May be in phase or not

Answer

None of these

Answer

Input and out signals are not in phase

Question 29

29. A signal applied at the non-inverting input, of an O.P that appears after amplification at the output terminal, with

Answer

No Phase shift

Answer

120° Phase shift

Answer

90° Phase shift

Answer

180° Phase shift

Question 30

30. In junction diode, the holes are because of:

Answer

Extra electrons

Answer

Missing electrons

Question 31

31. The number of junctions in the PNP transistor are

Question 32

32. N-type crystal is

Answer

Negative charged

Answer

None of these

Answer

Positively charged

Question 33

33. Zener breakdown in a semiconductor diode occurs when

Answer

Forward bias exceeds certain value

Answer

Forward current exceeds certain value

Answer

Potential barrier is reduced to zero

Answer

Reverse bias exceeds certain value

Question 34

34. When a p-n junction diode is reverse biased, the flow of current across the junction is mainly due to

Answer

Drift of charges

Answer

Depends upon the nature of material

Answer

Both drift and diffusion of charges

Answer

Diffusion of charges

Question 35

35. LDR means:

Answer

Light dependent resistance

Answer

Low degree radiations

Answer

None of these

Answer

Low degree resistor

Question 36

36. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 37

37. Which logic gate is represented by following diagram?

Question 38

38. The width of a depletion layer in a p-n junction is

Answer

Increased by forward biasing

Answer

Is independent of voltage

Answer

Decreased by reverse biasing

Answer

Increased by reverse biasing

Question 39

39. If a signal passing through a gate is inhibited by sending a low into one of the inputs, and the output is HIGH, the gate is a(n):

Question 40

40. In the transistor schematic symbol, the arrow

Answer

Point from north to south

Answer

Is located on the emitter

Answer

Is located on the base

Answer

Is locate on the collector

Question 41

41. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

Diode is neutralized

Answer

None of these

Answer

Diode is forward biased

Answer

Diode is reverse biased

Question 42

42. NAND gate is

Answer

Not a universal gate

Answer

A basic universal gate

Answer

A basic gate

Answer

A universal gate

Question 43

43. In a P-type semiconductor

Answer

Major current carriers are mobile negative ions

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile holes

Answer

Major current carriers are electrons

Question 44

44. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

The switch

Answer

The photo diodes

Answer

Solar cells

Answer

The light emitting diode

Question 45

45. Due to high loop gain of the amplifier, the inverting and non-inverting inputs are

Answer

Both are at the high potential

Answer

Inverting terminal is at high potential

Answer

Non-inverting terminal is at high potential

Answer

Both are at the same potential

Question 46

46. In insulators

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Conduction band is partially filled with electrons

Question 47

47. In forward bias the width of potential barrier

Answer

Remains same

Question 48

48. Which is normal used of transistor?

Answer

P-type material

Answer

Switching device

Question 49

49. In a p-type semiconductor germanium is doped with:

Answer

All of above

Question 50

50. At room temperature, a p-type semi-conductor has

Answer

Large number of holes and few electrons

Answer

Large number of free electrons and few holes

Answer

Equal number of free electrons and holes

Answer

Large number of holes and electrons

Question 51

51. The ratio β represents

Question 52

52. Semi-conductor germanium and silicon are

Answer

Tetravalent

Answer

Pentavalent

Question 53

53. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Variable amplitude

Answer

Unit amplitude

Answer

Zero amplitude

Answer

Constant amplitude

Question 54

54. When a pentavalent material like As, is added to tetravalent material l.e. Ge, we get a

Answer

Semiconductor

Answer

Super conductor

Answer

N-type material

Answer

P-type material

Question 55

55. Transistor can be used as

Answer

Half wave rectifier

Answer

Full wave rectifier

Question 56

56. The semiconductor diode can be used as a rectifier because _

Answer

It has low resistance to the current flow when forward biased

Answer

Its conductivity increases with rise of temperature

Answer

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer

It has high resistance to the current flow when reverse biased

Question 57

57. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 58

58. In Germanium crystal, impurity donor elements have valiancy

Question 59

59. When n-p-n transistor is used as an amplifier,

Answer

Holes move from emitter to base

Answer

Holes move from emitter to base

Answer

Holes move from base to emitter

Answer

Electrons move from base to collector

Question 60

60. When an alternating accelerating field is applied to a charge it produces

Answer

Electromagnetic Waves

Answer

Gamma Rays

Answer

Transverse Waves

Question 61

61. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 62

62. The operation of a transistor requires

Answer

That the emitter be heated

Answer

None of these

Answer

That the base be heated

Answer

That the collector be heated

Question 63

63. In a n-p-n transistor:

Answer

Negative charge moves from emitter to base

Answer

Holes move from emitter to base

Answer

Negative charge moves from collector to base

Answer

Holes move from base to collector

Question 64

64. Young’s modulus for copper is

Answer

91 x 10 Nm¯²

Answer

None of these

Answer

70 x 10 Nm¯²

Answer

110 Nm¯²

Answer 188

Phosphorus

Answer 189

At least one input is HIGH

Answer 190

All inputs are HIGH

Answer 191

All inputs are LOW

Answer 192

At least one input is LOW

Answer 193

Negative charge moves from collector to base

Answer 194

Negative charge moves from emitter to base

Answer 195

Holes move from emitter to base

Answer 196

Holes move from base to collector

Answer 197

Several mega ohms

Answer 198

None of these

Answer 199

Temperature

Answer 200

Doping density

Answer 201

Forward bias

Answer 202

Diode design

Answer 203

Number of holes increases while that of holes decreases

Answer 204

Number of electrons and holes remains same

Answer 205

Number of electrons and holes increases equally

Answer 206

Number of electrons increases while that of holes decreases

Answer 207

Semiconductor

Answer 208

OR gates only

Answer 209

Or gates and NOT gates

Answer 210

AND gates and NOT gates

Answer 211

AND gates, OR gates, and NOT gates

Answer 212

Require more current

Answer 213

Works efficiently

Answer 214

None of these

Answer 215

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 216

Major current carriers are electrons

Answer 217

Major current carriers are mobile negative ions

Answer 218

Major current carriers are mobile holes

Answer 219

Holes and electrons

Answer 220

Electrons and holes

Answer 221

Protons and electrons

Answer 222

Electrons and protons

Answer 223

Collector is positive and emitter is negative with respect to the base

Answer 224

Collector is positive and emitter is at negative potential as the base

Answer 225

Both collector and emitter are negative with respect to the base

Answer 226

Both collector and emitter are positive with respect to the base

Answer 227

Oscillator

Answer 228

P-type material

Answer 229

All of these

Answer 230

Amplification

Answer 231

Rectification

Answer 232

Magnification

Answer 233

Off switch

Answer 234

The valence band is completely filled

Answer 235

The conduction band is completely empty

Answer 236

The valence band is completely filled and the conduction band is partially filled

Answer 237

The valence band is partially empty and the conduction band is partially filled

Answer 238

Decreases and then increases

Answer 239

Remains unchanged

Answer 240

Insulators

Answer 241

Semiconductors

Answer 242

Superconductors

Answer 243

None of these

Answer 244

Millisecond

Answer 245

Microsecond

Answer 246

Nanosecond

Answer 247

Opposes the input signal

Answer 248

Is proportional to output current

Answer 249

Aids the input signal

Answer 250

Is proportional to differential voltage gain

Answer 251

None of these

Answer 252

Comparator

Answer 253

INVERTER gate

Answer 254

None of these

Answer 255

Current flows in pulses

Answer 256

Only half cycle is used

Answer 257

Current flows in one directions

Answer 258

Transformers

Answer 259

Electric generations

Answer 260

Electric motors

Answer 261

Immobile ions

Answer 262

Mobile ions

Answer 263

Increases the majority carrier current

Answer 264

Raises the potential barrier

Answer 265

Lowers the potential barrier

Answer 266

Increase the minority carrier current

Answer 267

Resistance of both decreases

Answer 268

Resistance of copper increases while that of germanium decreases

Answer 269

Resistance of both increases

Answer 270

Resistance of copper decreases while that of germanium increases

Answer 271

Valence electrons

Answer 272

None of these

Answer 273

Free electrons

Answer 274

Tightly bound electrons

Answer 275

None of these

Answer 276

may be p-type or n-type

Answer 277

Bulk’s modulus

Answer 278

Young’s modulus

Answer 279

Modulus of electricity

Answer 280

None of these

Answer 281

Multivibrator

Answer 282

Oscillator

Answer 283

10¯¹² cm

Answer 284

10¯⁶ cm

Answer 285

None of these

Answer 286

Both A.C. & D.C.

Answer 287

Oscillator

Answer 288

Can be any of the above three

Answer 289

None of these

Answer 290

Diffusion region

Answer 291

Depletion region

Answer 292

Charged region

Answer 293

Holes move from emitter to base

Answer 294

Holes move from base to emitter

Answer 295

Electrons move from base to collector

Answer 296

Holes move from emitter be base

Answer 297

None of these

Answer 298

Bulk modulus

Answer 299

Young’s modulus

Answer 300

Shear modulus

Answer 301

Four PN-junctions

Answer 302

One PN-junction

Answer 303

Three PN-junctions

Answer 304

Two PN-junctions

Answer 305

A rectifier

Answer 306

An amplifier

Answer 307

Filtering circuit

Answer 308

Any of above

Answer 309

Suddenly increases

Answer 310

Decreases slowly

Answer 311

Remain fixed

Answer 312

Increases slowly

Answer 313

Logic gates

Answer 314

Oscillator

Answer 315

Under reverse bias

Answer 316

Under forward bias

Answer 317

During the manufacturing process

Answer 318

When temperature varies

Answer 319

Oscillator

Answer 320

Logic gates

Answer 321

Can be any of the above three

Answer 322

Voltage gain

Answer 323

Input resistance

Answer 324

None of these

Answer 325

Current gain

Answer 326

Holes move from base to emitter

Answer 327

Electrons move from emitter to base

Answer 328

Electrons move from collector to base

Answer 329

Electrons move from base to emitter

Answer 330

Forbidden energy states

Answer 331

Band levels

Answer 332

Hidden energy states

Answer 333

None of these

Answer 334

High potential at P side and low potential at N side

Answer 335

High potential at N side and low potential at P side

Answer 336

P and N both are at same potential

Answer 337

Undetermined

Answer 338

Low voltage to high voltage

Answer 339

High voltage to low voltage

Answer 340

D.C. into A.C.

Answer 341

A.C. into D.C.

Answer 342

Phosphorus

Answer 343

Potential is zero

Answer 344

Potential is maximum

Answer 345

Electric field is zero

Answer 346

Electric field is maximum

Answer 347

Phosphorus

Answer 348

None of these

Answer 349

Almost zero

Answer 350

n-type conductor

Answer 351

n-type semiconductor

Answer 352

p-type semiconductor

Answer 353

p-type conductor

Answer 354

NAND gates

Answer 355

Almost negligible

Answer 356

A low output impedance

Answer 357

A very low input impedance

Answer 358

A very high input impedance

Answer 359

None of these

Answer 360

HIGH inputs and a HIGH output

Answer 361

None of these

Answer 362

LOW inputs and a LOW output

Answer 363

LOW inputs and a HIGH output

Answer 364

None of these

Answer 365

Zero biased

Answer 366

Forward biased

Answer 367

None of these

Answer 368

Reversed biased

Answer 369

Phosphorus

Answer 370

Forward biases

Answer 371

None of these

Answer 372

Reverse biased

Answer 373

Oscillator

Answer 374

None of these

Answer 375

None of these

Answer 376

Common base configuration

Answer 377

Common emitter configuration

Answer 378

Common collector configuration

Answer 379

None of these

Answer 380

Increases the majority carrier current

Answer 381

Raises the potential barrier

Answer 382

Increase the minority carrier current

Answer 383

Lowers the potential barrier

Answer 384

Virtual input

Answer 385

Non-inverting voltage at output

Answer 386

Reference voltage on the other

Answer 387

Using a transistor

Answer 388

Suppressing half wave of A.C supply by using diode

Answer 389

Using a Coolidge tube

Answer 390

Suppressing the harmonics in A.C voltage

Answer 391

Either emitter or collector

Answer 392

Superconductor

Answer 393

From pure Ge crystal

Answer 394

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 395

From pure Si crystal

Answer 396

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 397

Greater than emitter current

Answer 398

Any of above

Answer 399

Slightly less than emitter current

Answer 400

Equal to emitter current

Answer 401

None of these

Answer 402

Potential barrier in depletion layer remains unchanged

Answer 403

Diode is forward based

Answer 404

Potential barrier in depletion layer increases

Answer 405

Diode is reverse biased

Answer 406

None of these

Answer 407

Resistor is used

Answer 408

Capacitor is used

Answer 409

Solvent is used

Answer 410

Superconductors

Answer 411

Semiconductors

Answer 412

Insulators

Answer 413

Copper decreases and germanium increases

Answer 414

Each of them decreases

Answer 415

Each of them increases

Answer 416

Copper increases and germanium decreases

Answer 417

Man hundred

Answer 418

None of these

Answer 419

Major current carrier is electrons

Answer 420

Major carrier is mobile holes

Answer 421

Major carrier is mobile negative ions

Answer 422

The number of mobile holes exceeds the number of acceptors

Answer 423

Any of the above depending on nature of transistor

Answer 424

Increased by reverse biasing

Answer 425

Decreased by reverse biasing

Answer 426

Increased by forward biasing

Answer 427

Is independent of voltage

Answer 428

any of above

Answer 429

p-type conductor

Answer 430

n-type semiconductor

Answer 431

p-type semiconductor

Answer 432

n-type conductor

Answer 433

n-type semiconductor

Answer 434

p-type semiconductor

Answer 435

n-type conductor

Answer 436

p-type conductor

Answer 437

p-carriers only

Answer 438

p-carriers and n-carriers respectively

Answer 439

n-carriers and p-carriers respectively

Answer 440

n-carriers only

Answer 441

The valence band is completely filled and the conduction band is partially filled

Answer 442

The valence band is partially empty and the conduction band is partially filled

Answer 443

The conduction band is completely empty

Answer 444

The valence band is completely filled

Answer 445

Low voltage to high voltage

Answer 446

A.C. into D.C.

Answer 447

High voltage to low voltage

Answer 448

D.C. into A.C.

Answer 449

Potential is zero

Answer 450

Electric field is maximum

Answer 451

Potential is maximum

Answer 452

Electric field is zero

Answer 453

Thickness of collector

Answer 454

Very small as compared to the thickness of emitter and collector

Answer 455

Mean of thickness of emitter and collector

Answer 456

Thickness of emitter

Answer 457

All of these

Answer 458

Greater than one

Answer 459

Less than one

Answer 460

Equal to one

Answer 461

Valence band is partially filled with electrons

Answer 462

Conduction band is empty and valence band is filled with electrons

Answer 463

Conduction band is partially filled with electrons

Answer 464

Conduction band is filled with electrons and valence band is empty

Answer 465

Crystalline solids

Answer 466

Glassy solids

Answer 467

Amorphous solids

Answer 468

Polymeric solids

Answer 469

None of these

Answer 470

Each of them decreases

Answer 471

Copper decreases and germanium increases

Answer 472

Copper increases and germanium decreases

Answer 473

Each of them increases

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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