Physics Electronics Online Mcqs Test

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Question 1

1. In forward bias the width of potential barrier

Answer

Remains same

Question 2

2. When n-p-n transistor is used as an amplifier,

Answer

Holes move from emitter to base

Answer

Holes move from emitter to base

Answer

Electrons move from base to collector

Answer

Holes move from base to emitter

Question 3

3. To use a transistor as an amplifier

Answer

No bias voltages are required

Answer

Both junctions are forward biased

Answer

Both junctions are reverse biased

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Question 4

4. The ratio of tensile stress to tensile strain is called

Answer

Bulk’s modulus

Answer

Young’s modulus

Answer

None of these

Answer

Modulus of electricity

Question 5

5. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

Or gates and NOT gates

Answer

AND gates, OR gates, and NOT gates

Answer

AND gates and NOT gates

Answer

OR gates only

Question 6

6. When the output of OR gate is 1

Answer

If both inputs are zero

Answer

Only if both inputs are 1

Answer

If either or both inputs are 1

Answer

If either input is zero

Question 7

7. If on increasing temperature the resistance decreases, then it is

Answer

Superconductor

Answer

None of these

Answer

Semiconductor

Question 8

8. Arsenic, antimony or phosphorus are impurities of

Answer

None of these

Answer

may be p-type or n-type

Question 9

9. The thickness of the base is equal to

Answer

Very small as compared to the thickness of emitter and collector

Answer

Mean of thickness of emitter and collector

Answer

Thickness of collector

Answer

Thickness of emitter

Question 10

10. In Germanium crystal, impurity donor elements have valiancy

Question 11

11. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 12

12. In semiconductors at a room temperature

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled

Question 13

13. When a semiconductor is continuously heated, then value of its resistance

Answer

Remains unchanged

Answer

Decreases and then increases

Question 14

14. Transistors with various combinations are widely used as switches in:

Answer

Electric generations

Answer

Transformers

Answer

Electric motors

Question 15

15. In a P-type semiconductor

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile holes

Question 16

16. A NAND gate has:

Answer

None of these

Answer

LOW inputs and a HIGH output

Answer

LOW inputs and a LOW output

Answer

HIGH inputs and a HIGH output

Question 17

17. When we apply reverse bias to a junction diode, it

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Answer

Increase the majority carrier current

Question 18

18. At absolute zero, Si acts as

Answer

None of these

Question 19

19. n-type germanium is obtained on doping intrinsic germanium with

Answer

Phosphorus

Question 20

20. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of both decreases

Answer

Resistance of both increases

Answer

Resistance of copper decreases while that of germanium increases

Question 21

21. p-n junction when reversed biased acts as a

Answer

Off switch

Question 22

22. In a P-type semiconductor

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are mobile holes

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are electrons

Question 23

23. The width of a depletion layer in a p-n junction is

Answer

Increased by reverse biasing

Answer

Decreased by reverse biasing

Answer

Increased by forward biasing

Answer

Is independent of voltage

Question 24

24. When an alternating accelerating field is applied to a charge it produces

Answer

Transverse Waves

Answer

Electromagnetic Waves

Answer

Gamma Rays

Question 25

25. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 26

26. Due to high loop gain of the amplifier, the inverting and non-inverting inputs are

Answer

Non-inverting terminal is at high potential

Answer

Both are at the same potential

Answer

Both are at the high potential

Answer

Inverting terminal is at high potential

Question 27

27. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Each of them decreases

Answer

Copper decreases and germanium increases

Answer

Copper increases and germanium decreases

Answer

Each of them increases

Question 28

28. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

p-type semiconductor

Answer

p-type conductor

Answer

n-type conductor

Question 29

29. The energy band gap is maximum in

Answer

Superconductors

Answer

Semiconductors

Answer

Insulators

Question 30

30. A transistor consists of

Answer

Two PN-junctions

Answer

Four PN-junctions

Answer

Three PN-junctions

Answer

One PN-junction

Question 31

31. In a junction diode, the holes are due to

Answer

Missing of electrons

Answer

Extra electrons

Question 32

32. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 33

33. Diode can work as

Answer

Oscillator

Answer

Multivibrator

Question 34

34. Due to the break down the p-n junction suffers

Answer

None of these

Answer

Works efficiently

Answer

Require more current

Question 35

35. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 36

36. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

None of these

Answer

Oscillator

Question 37

37. Non-inverting amplifier circuits have

Answer

None of these

Answer

A low output impedance

Answer

A very high input impedance

Answer

A very low input impedance

Question 38

38. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

None of these

Answer

Diode is reverse biased

Answer

Diode is neutralized

Answer

Diode is forward biased

Question 39

39. Reverse bias applied on a junction diode

Answer

Lowers the potential barrier

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Increases the majority carrier current

Question 40

40. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 41

41. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is zero

Answer

Potential is zero

Answer

Potential is maximum

Answer

Electric field is maximum

Question 42

42. If a signal passing through a gate is inhibited by sending a low into one of the inputs, and the output is HIGH, the gate is a(n):

Question 43

43. Young’s modulus for copper is

Answer

91 x 10 Nm¯²

Answer

110 Nm¯²

Answer

70 x 10 Nm¯²

Answer

None of these

Question 44

44. Conversion of low input a.c. into high output a.c. is called:

Answer

Rectification

Answer

All of these

Answer

Magnification

Answer

Amplification

Question 45

45. Depletion layer consists of

Answer

Immobile ions

Answer

Mobile ions

Question 46

46. The working of transistor as amplifier is similar to

Answer

Triode vacuum tube

Answer

Step up transformer

Answer

Three diodes in common

Answer

Step down transformer

Question 47

47. In junction diode, the holes are because of:

Answer

Extra electrons

Answer

Missing electrons

Question 48

48. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 49

49. In the transistor schematic symbol, the arrow

Answer

Point from north to south

Answer

Is located on the base

Answer

Is located on the emitter

Answer

Is locate on the collector

Question 50

50. Which logic gate is represented by following diagram?

Question 51

51. In a n-p-n transistor:

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Answer

Negative charge moves from collector to base

Answer

Negative charge moves from emitter to base

Question 52

52. Depletion region of a junction is formed

Answer

Under forward bias

Answer

During the manufacturing process

Answer

When temperature varies

Answer

Under reverse bias

Question 53

53. Reverse bias applied on a junction diode

Answer

Increase the minority carrier current

Answer

Increases the majority carrier current

Answer

Raises the potential barrier

Answer

Lowers the potential barrier

Question 54

54. An OP-AMPs can amplify

Answer

Both A.C. & D.C.

Answer

None of these

Question 55

55. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 56

56. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 57

57. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 58

58. Photodiode is used for

Answer

Light display

Answer

Emission of light

Answer

None of these

Answer

Detection of light

Question 59

59. Which is normal used of transistor?

Answer

P-type material

Answer

Switching device

Question 60

60. In a n-p-n transistor:

Answer

Negative charge moves from collector to base

Answer

Holes move from emitter to base

Answer

Holes move from base to collector

Answer

Negative charge moves from emitter to base

Question 61

61. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Less than one

Answer

Greater than one

Answer

Equal to one

Question 62

62. The whole structure obtained by the repetition of unit cell is known as

Answer

All of these

Answer

Crystal lattice

Question 63

63. A p-n junction has a thickness of the order of:

Answer

10¯⁶ cm

Answer

10¯¹² cm

Question 64

64. A n-p-n transistor conducts when

Answer

Both collector and emitter are negative with respect to the base

Answer

Collector is positive and emitter is at negative potential as the base

Answer

Both collector and emitter are positive with respect to the base

Answer

Collector is positive and emitter is negative with respect to the base

Answer 175

It offers a very high inputs resistance to the input current

Answer 176

It offers a very low open loop gain all of above

Answer 177

It offers a very low output resistance

Answer 178

None of these

Answer 179

Minority carriers

Answer 180

Majority carriers

Answer 181

Dual carriers

Answer 182

Conduction band is partially filled with electrons

Answer 183

Conduction band is filled with electrons and valence bad is empty

Answer 184

Conduction band is empty and valence band is filled with electrons

Answer 185

Valence band is partially filled with electrons

Answer 186

INVERTER gate

Answer 187

Comparator

Answer 188

Resistor is used

Answer 189

Capacitor is used

Answer 190

Solvent is used

Answer 191

None of these

Answer 192

Virtual input

Answer 193

Reference voltage on the other

Answer 194

Non-inverting voltage at output

Answer 195

Zero biased

Answer 196

Forward biased

Answer 197

Reversed biased

Answer 198

None of these

Answer 199

Current flows in one directions

Answer 200

Current flows in pulses

Answer 201

None of these

Answer 202

Only half cycle is used

Answer 203

Semiconductor

Answer 204

None of these

Answer 205

Super conductor

Answer 206

N-type material

Answer 207

Semiconductor

Answer 208

P-type material

Answer 209

Shear modulus

Answer 210

Young’s modulus

Answer 211

None of these

Answer 212

Bulk modulus

Answer 213

A basic gate

Answer 214

A basic universal gate

Answer 215

Not a universal gate

Answer 216

A universal gate

Answer 217

None of these

Answer 218

Forward biases

Answer 219

Reverse biased

Answer 220

The number of mobile holes exceeds the number of acceptors

Answer 221

Major carrier is mobile negative ions

Answer 222

Major carrier is mobile holes

Answer 223

Major current carrier is electrons

Answer 224

Several mega ohms

Answer 225

Constant amplitude

Answer 226

Unit amplitude

Answer 227

Variable amplitude

Answer 228

Zero amplitude

Answer 229

Electrons move from collector to base

Answer 230

Electrons move from base to emitter

Answer 231

Holes move from base to emitter

Answer 232

Electrons move from emitter to base

Answer 233

Full wave rectifier

Answer 234

Half wave rectifier

Answer 235

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 236

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 237

From pure Ge crystal

Answer 238

From pure Si crystal

Answer 239

None of these

Answer 240

NAND gates

Answer 241

Remains unchanged

Answer 242

Decreases and then increases

Answer 243

None of these

Answer 244

Almost zero

Answer 245

Depends upon the nature of material

Answer 246

Drift of charges

Answer 247

Diffusion of charges

Answer 248

Both drift and diffusion of charges

Answer 249

Low degree resistor

Answer 250

None of these

Answer 251

Low degree radiations

Answer 252

Light dependent resistance

Answer 253

In reverse bias

Answer 254

In forward bias

Answer 255

None of these

Answer 256

Pentavalent

Answer 257

Tetravalent

Answer 258

D.C. into A.C.

Answer 259

A.C. into D.C.

Answer 260

Low voltage to high voltage

Answer 261

High voltage to low voltage

Answer 262

Semiconductors

Answer 263

Insulators

Answer 264

Superconductors

Answer 265

Band levels

Answer 266

Hidden energy states

Answer 267

None of these

Answer 268

Forbidden energy states

Answer 269

Semiconductors

Answer 270

Insulators

Answer 271

Superconductors

Answer 272

Conductors

Answer 273

Large number of holes and few electrons

Answer 274

Large number of free electrons and few holes

Answer 275

Large number of holes and electrons

Answer 276

Equal number of free electrons and holes

Answer 277

None of these

Answer 278

That the emitter be heated

Answer 279

That the collector be heated

Answer 280

That the base be heated

Answer 281

Superconductor

Answer 282

Low voltage to high voltage

Answer 283

D.C. into A.C.

Answer 284

A.C. into D.C.

Answer 285

High voltage to low voltage

Answer 286

P and N both are at same potential

Answer 287

Undetermined

Answer 288

High potential at N side and low potential at P side

Answer 289

High potential at P side and low potential at N side

Answer 290

Nanosecond

Answer 291

Millisecond

Answer 292

Microsecond

Answer 293

None of these

Answer 294

Potential barrier in depletion layer remains unchanged

Answer 295

Potential barrier in depletion layer increases

Answer 296

Diode is forward based

Answer 297

Diode is reverse biased

Answer 298

Increase its life

Answer 299

Increases its electrical conductivity

Answer 300

Increase its electrical resistivity

Answer 301

Enable it to Telerate higher voltage

Answer 302

None of these

Answer 303

No Phase shift

Answer 304

120° Phase shift

Answer 305

180° Phase shift

Answer 306

90° Phase shift

Answer 307

Electrons and holes

Answer 308

Holes and electrons

Answer 309

Electrons and protons

Answer 310

Protons and electrons

Answer 311

None of these

Answer 312

Man hundred

Answer 313

n-type semiconductor

Answer 314

p-type semiconductor

Answer 315

n-type conductor

Answer 316

p-type conductor

Answer 317

Increases slowly

Answer 318

Remain fixed

Answer 319

Suddenly increases

Answer 320

Decreases slowly

Answer 321

Any of above

Answer 322

Polymeric solids

Answer 323

Crystalline solids

Answer 324

Glassy solids

Answer 325

Amorphous solids

Answer 326

Electric field is zero

Answer 327

Electric field is maximum

Answer 328

Potential is maximum

Answer 329

Potential is zero

Answer 330

Current gain

Answer 331

None of these

Answer 332

Voltage gain

Answer 333

Input resistance

Answer 334

None of these

Answer 335

Chemical energy

Answer 336

Heat energy

Answer 337

Light energy

Answer 338

All inputs are HIGH

Answer 339

At least one input is HIGH

Answer 340

At least one input is LOW

Answer 341

All inputs are LOW

Answer 342

First A and B

Answer 343

Remains constant

Answer 344

Oscillator

Answer 345

Logic gates

Answer 346

None of these

Answer 347

Oscillator

Answer 348

Logic gates

Answer 349

It has high resistance to the current flow when reverse biased

Answer 350

Its conductivity increases with rise of temperature

Answer 351

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 352

It has low resistance to the current flow when forward biased

Answer 353

Conduction band is filled with electrons and valence band is empty

Answer 354

Conduction band is partially filled with electrons

Answer 355

Valence band is partially filled with electrons

Answer 356

Conduction band is empty and valence band is filled with electrons

Answer 357

Suppressing half wave of A.C supply by using diode

Answer 358

Using a Coolidge tube

Answer 359

Suppressing the harmonics in A.C voltage

Answer 360

Using a transistor

Answer 361

None of these

Answer 362

Can be any of the above three

Answer 363

Increased by reverse biasing

Answer 364

Increased by forward biasing

Answer 365

Is independent of voltage

Answer 366

Decreased by reverse biasing

Answer 367

Forward bias exceeds certain value

Answer 368

Reverse bias exceeds certain value

Answer 369

Forward current exceeds certain value

Answer 370

Potential barrier is reduced to zero

Answer 371

Negative charged

Answer 372

None of these

Answer 373

Positively charged

Answer 374

Increase its electrical conductivity

Answer 375

Increase its life

Answer 376

Increase its electrical resistivity

Answer 377

Enable it to Telerate higher voltage

Answer 378

Less than electrons

Answer 379

Greater than electrons

Answer 380

Equal to electrons

Answer 381

Number of electrons and holes remains same

Answer 382

Number of electrons and holes increases equally

Answer 383

Number of electrons increases while that of holes decreases

Answer 384

Number of holes increases while that of holes decreases

Answer 385

Slightly less than emitter current

Answer 386

Any of above

Answer 387

Equal to emitter current

Answer 388

Greater than emitter current

Answer 389

Diffusion region

Answer 390

None of these

Answer 391

Depletion region

Answer 392

Charged region

Answer 393

Holes move from emitter to base

Answer 394

Electrons move from base to collector

Answer 395

Holes move from base to emitter

Answer 396

Holes move from emitter be base

Answer 397

Valence electrons

Answer 398

Free electrons

Answer 399

None of these

Answer 400

Tightly bound electrons

Answer 401

An amplifier

Answer 402

A rectifier

Answer 403

Filtering circuit

Answer 404

Large number of free electrons and few holes

Answer 405

Large number of holes and electrons

Answer 406

Equal number of free electrons and holes

Answer 407

Large number of holes and few electrons

Answer 408

Temperature

Answer 409

Forward bias

Answer 410

Doping density

Answer 411

Diode design

Answer 412

Either emitter or collector

Answer 413

Input and out signals are in phase

Answer 414

May be in phase or not

Answer 415

Input and out signals are not in phase

Answer 416

None of these

Answer 417

Missing electrons

Answer 418

Extra electrons

Answer 419

Logic gates

Answer 420

Automatic switching

Answer 421

Detection of visible and invisible radiations

Answer 422

None of these

Answer 423

All of these

Answer 424

Oscillator

Answer 425

P-type material

Answer 426

Common base configuration

Answer 427

None of these

Answer 428

Common collector configuration

Answer 429

Common emitter configuration

Answer 430

All of above

Answer 431

Holes in n-type and p-type

Answer 432

Holes in n-type and free electrons in p-type

Answer 433

Free electrons in n-type and p-type

Answer 434

Free electrons in n-type and holes in p-type

Answer 435

Is proportional to output current

Answer 436

Opposes the input signal

Answer 437

Is proportional to differential voltage gain

Answer 438

Aids the input signal

Answer 439

The valence band is completely filled

Answer 440

The valence band is partially empty and the conduction band is partially filled

Answer 441

The conduction band is completely empty

Answer 442

The valence band is completely filled and the conduction band is partially filled

Answer 443

Transistor

Answer 444

p-type semiconductor

Answer 445

p-type conductor

Answer 446

n-type semiconductor

Answer 447

n-type conductor

Answer 448

any of above

Answer 449

n-carriers only

Answer 450

p-carriers and n-carriers respectively

Answer 451

n-carriers and p-carriers respectively

Answer 452

p-carriers only

Answer 453

The photo diodes

Answer 454

The switch

Answer 455

Solar cells

Answer 456

The light emitting diode

Answer 457

None of these

Answer 458

Any of the above depending on nature of transistor

Answer 459

Copper decreases and germanium increases

Answer 460

Each of them increases

Answer 461

Each of them decreases

Answer 462

Copper increases and germanium decreases

Answer 463

Phosphorus

Answer 464

None of these

Answer 465

Shear stress

Answer 466

Tensile stress

Answer 467

Compress ional stress

Answer 468

None of these

Answer 469

Semiconductor

Answer 470

N-type semiconductor

Answer 471

N-type conductor

Answer 472

None of these

Answer 473

P-type semiconductor

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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