Physics Electronics Online Mcqs Test

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Question 1

1. Application of photodiode is/are

Answer

Detection of visible and invisible radiations

Answer

Logic gates

Answer

None of these

Answer

Automatic switching

Question 2

2. In p-type semi-conductor, the majority charge carriers are

Question 3

3. When n-p-n transistor is used as an amplifier,

Answer

Holes move from base to emitter

Answer

Electrons move from base to collector

Answer

Holes move from emitter to base

Answer

Holes move from emitter to base

Question 4

4. The energy band gap is maximum in

Answer

Insulators

Answer

Semiconductors

Answer

Superconductors

Question 5

5. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 6

6. The switch is open when the resistance between C and E becomes

Answer

None of these

Answer

Almost zero

Question 7

7. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Suddenly increases

Answer

Remain fixed

Answer

Increases slowly

Answer

Decreases slowly

Question 8

8. Conversion of low input a.c. into high output a.c. is called:

Answer

Amplification

Answer

All of these

Answer

Magnification

Answer

Rectification

Question 9

9. In semiconductors at a room temperature

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Answer

The valence band is completely filled and the conduction band is partially filled

Question 10

10. In a junction diode, the holes are due to

Answer

Extra electrons

Answer

Missing of electrons

Question 11

11. The operation of a transistor requires

Answer

That the emitter be heated

Answer

None of these

Answer

That the base be heated

Answer

That the collector be heated

Question 12

12. A substance which have empty conduction band is called

Answer

Semiconductor

Answer

None of these

Question 13

13. In Germanium crystal, impurity donor elements have valiancy

Question 14

14. p-n junction when reversed biased acts as a

Answer

Off switch

Question 15

15. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

None of these

Answer

Oscillator

Question 16

16. In p-n-p transistor the collector current is

Answer

Any of above

Answer

Slightly less than emitter current

Answer

Greater than emitter current

Answer

Equal to emitter current

Question 17

17. In a P-type semiconductor

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile holes

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are electrons

Question 18

18. The width of a depletion layer in a p-n junction is

Answer

Increased by reverse biasing

Answer

Decreased by reverse biasing

Answer

Is independent of voltage

Answer

Increased by forward biasing

Question 19

19. When n-p-n transistor is used as an amplifier

Answer

Electrons move from base to collector

Answer

Holes move from emitter to base

Answer

Holes move from base to emitter

Answer

Holes move from emitter be base

Question 20

20. The energy band gap is maximum in

Answer

Superconductors

Answer

Insulators

Answer

Semiconductors

Question 21

21. Young’s modulus for copper is

Answer

110 Nm¯²

Answer

None of these

Answer

91 x 10 Nm¯²

Answer

70 x 10 Nm¯²

Question 22

22. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 23

23. Acceptor and donor impurities donate

Answer

n-carriers and p-carriers respectively

Answer

n-carriers only

Answer

p-carriers and n-carriers respectively

Answer

p-carriers only

Question 24

24. The least doped region in a transistor is

Question 25

25. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 26

26. The materials in which valence band and conduction band overlap are called

Answer

Conductors

Answer

Semiconductors

Answer

Insulators

Answer

Superconductors

Question 27

27. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 28

28. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Zero amplitude

Answer

Unit amplitude

Answer

Variable amplitude

Answer

Constant amplitude

Question 29

29. Which one is reverse-biased?

Question 30

30. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Forward biased

Answer

None of these

Answer

Reversed biased

Answer

Zero biased

Question 31

31. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

AND gates and NOT gates

Answer

Or gates and NOT gates

Answer

AND gates, OR gates, and NOT gates

Answer

OR gates only

Question 32

32. Which one is forward bias?

Question 33

33. Semi-conductor germanium and silicon are

Answer

Pentavalent

Answer

Tetravalent

Question 34

34. The thickness of the base is equal to

Answer

Thickness of emitter

Answer

Very small as compared to the thickness of emitter and collector

Answer

Mean of thickness of emitter and collector

Answer

Thickness of collector

Question 35

35. Using OP-Amp as an inverting amplifier, the non-inverting terminal has potential

Answer

None of these

Question 36

36. A device which converts an alternating current to direct current is called

Answer

Oscillator

Answer

P-type material

Question 37

37. A diode as a rectifier converts:

Answer

Low voltage to high voltage

Answer

High voltage to low voltage

Answer

D.C. into A.C.

Answer

A.C. into D.C.

Question 38

38. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

None of these

Answer

Forbidden energy states

Answer

Band levels

Answer

Hidden energy states

Question 39

39. At absolute zero, Si acts as

Answer

None of these

Question 40

40. Reverse bias applied on a junction diode

Answer

Lowers the potential barrier

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Increases the majority carrier current

Question 41

41. When NPN transistor is used as an amplifier

Answer

Holes move from base to emitter

Answer

Electrons move from base to emitter

Answer

Electrons move from emitter to base

Answer

Electrons move from collector to base

Question 42

42. When the output of OR gate is 1

Answer

Only if both inputs are 1

Answer

If either input is zero

Answer

If both inputs are zero

Answer

If either or both inputs are 1

Question 43

43. In n-p-n transistor, p works as

Answer

Any of above

Question 44

44. The part of a transistor which is heavily doped to produce large number of majority carriers is

Answer

Any of the above depending on nature of transistor

Question 45

45. The electrical circuit used to bet smooth DC output from a rectifier circuit is called

Answer

Oscillator

Answer

Logic gates

Question 46

46. The positive sign of gain indicates that

Answer

May be in phase or not

Answer

None of these

Answer

Input and out signals are in phase

Answer

Input and out signals are not in phase

Question 47

47. Semi-conductors with donor atoms and free electrons belong to the type

Answer

any of above

Question 48

48. In p-type semiconductor

Answer

Major current carrier is electrons

Answer

The number of mobile holes exceeds the number of acceptors

Answer

Major carrier is mobile holes

Answer

Major carrier is mobile negative ions

Question 49

49. To use a transistor as an amplifier

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

Both junctions are reverse biased

Answer

Both junctions are forward biased

Answer

No bias voltages are required

Question 50

50. Which of the following is not characteristic of an op—amp

Answer

None of these

Answer

It offers a very high inputs resistance to the input current

Answer

It offers a very low open loop gain all of above

Answer

It offers a very low output resistance

Question 51

51. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Non-inverting voltage at output

Answer

Reference voltage on the other

Answer

Virtual input

Question 52

52. Reverse bias applied on a junction diode

Answer

Lowers the potential barrier

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Answer

Increases the majority carrier current

Question 53

53. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 54

54. The critical temperature for mercury is

Question 55

55. Polythene, potystrene and nylon are examples of

Answer

Amorphous solids

Answer

Crystalline solids

Answer

Polymeric solids

Answer

Glassy solids

Question 56

56. In a p-type semiconductor germanium is doped with:

Answer

All of above

Question 57

57. Which logic gate is represented by following diagram?

Question 58

58. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 59

59. With negative feedback, the returning signal:

Answer

Aids the input signal

Answer

Is proportional to differential voltage gain

Answer

Is proportional to output current

Answer

Opposes the input signal

Question 60

60. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 61

61. Depletion region of a junction is formed

Answer

When temperature varies

Answer

Under reverse bias

Answer

Under forward bias

Answer

During the manufacturing process

Question 62

62. When a strength changes the length of a body, it is called

Answer

Tensile stress

Answer

None of these

Answer

Shear stress

Answer

Compress ional stress

Question 63

63. In half wave rectification

Answer

Current flows in pulses

Answer

None of these

Answer

Current flows in one directions

Answer

Only half cycle is used

Question 64

64. What input values will cause an AND logic gate to produce a HIGH output?

Answer

At least one input is LOW

Answer

At least one input is HIGH

Answer

All inputs are HIGH

Answer

All inputs are LOW

Answer 172

Either emitter or collector

Answer 173

None of these

Answer 174

None of these

Answer 175

Holes in n-type and free electrons in p-type

Answer 176

Free electrons in n-type and p-type

Answer 177

Free electrons in n-type and holes in p-type

Answer 178

Holes in n-type and p-type

Answer 179

None of these

Answer 180

Full wave rectifier

Answer 181

Half wave rectifier

Answer 182

Three diodes in common

Answer 183

Step up transformer

Answer 184

Triode vacuum tube

Answer 185

Step down transformer

Answer 186

Drift of charges

Answer 187

Diffusion of charges

Answer 188

Both drift and diffusion of charges

Answer 189

Depends upon the nature of material

Answer 190

In forward bias

Answer 191

None of these

Answer 192

In reverse bias

Answer 193

Bulk modulus

Answer 194

Shear modulus

Answer 195

Young’s modulus

Answer 196

None of these

Answer 197

Forward bias

Answer 198

Doping density

Answer 199

Diode design

Answer 200

Temperature

Answer 201

Free electrons

Answer 202

None of these

Answer 203

Tightly bound electrons

Answer 204

Valence electrons

Answer 205

Decreases and then increases

Answer 206

Remains unchanged

Answer 207

Holes move from base to collector

Answer 208

Holes move from emitter to base

Answer 209

Negative charge moves from collector to base

Answer 210

Negative charge moves from emitter to base

Answer 211

High potential at N side and low potential at P side

Answer 212

P and N both are at same potential

Answer 213

Undetermined

Answer 214

High potential at P side and low potential at N side

Answer 215

Potential is zero

Answer 216

Electric field is maximum

Answer 217

Electric field is zero

Answer 218

Potential is maximum

Answer 219

Increase its life

Answer 220

Increases its electrical conductivity

Answer 221

Increase its electrical resistivity

Answer 222

Enable it to Telerate higher voltage

Answer 223

Potential is zero

Answer 224

Electric field is maximum

Answer 225

Potential is maximum

Answer 226

Electric field is zero

Answer 227

Phosphorus

Answer 228

Remains same

Answer 229

Decreases and then increases

Answer 230

Remains unchanged

Answer 231

Can be any of the above three

Answer 232

Conduction band is partially filled with electrons

Answer 233

Conduction band is filled with electrons and valence band is empty

Answer 234

Valence band is partially filled with electrons

Answer 235

Conduction band is empty and valence band is filled with electrons

Answer 236

Increased by forward biasing

Answer 237

Is independent of voltage

Answer 238

Increased by reverse biasing

Answer 239

Decreased by reverse biasing

Answer 240

Number of electrons and holes remains same

Answer 241

Number of electrons and holes increases equally

Answer 242

Number of electrons increases while that of holes decreases

Answer 243

Number of holes increases while that of holes decreases

Answer 244

None of these

Answer 245

N-type conductor

Answer 246

P-type semiconductor

Answer 247

N-type semiconductor

Answer 248

None of these

Answer 249

Negative charged

Answer 250

Positively charged

Answer 251

Logic gates

Answer 252

Oscillator

Answer 253

Both collector and emitter are positive with respect to the base

Answer 254

Collector is positive and emitter is negative with respect to the base

Answer 255

Collector is positive and emitter is at negative potential as the base

Answer 256

Both collector and emitter are negative with respect to the base

Answer 257

Common emitter configuration

Answer 258

Common base configuration

Answer 259

None of these

Answer 260

Common collector configuration

Answer 261

It has high resistance to the current flow when reverse biased

Answer 262

Its conductivity increases with rise of temperature

Answer 263

It has low resistance to the current flow when forward biased

Answer 264

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 265

Phosphorus

Answer 266

None of these

Answer 267

Holes move from emitter to base

Answer 268

Negative charge moves from emitter to base

Answer 269

Negative charge moves from collector to base

Answer 270

Holes move from base to collector

Answer 271

Extra electrons

Answer 272

Missing electrons

Answer 273

Is located on the emitter

Answer 274

Point from north to south

Answer 275

Is located on the base

Answer 276

Is locate on the collector

Answer 277

Diode is reverse biased

Answer 278

None of these

Answer 279

Diode is forward biased

Answer 280

Diode is neutralized

Answer 281

Semiconductor

Answer 282

LOW inputs and a LOW output

Answer 283

LOW inputs and a HIGH output

Answer 284

HIGH inputs and a HIGH output

Answer 285

None of these

Answer 286

Modulus of electricity

Answer 287

Bulk’s modulus

Answer 288

Young’s modulus

Answer 289

None of these

Answer 290

may be p-type or n-type

Answer 291

None of these

Answer 292

Comparator

Answer 293

INVERTER gate

Answer 294

The photo diodes

Answer 295

The light emitting diode

Answer 296

The switch

Answer 297

Solar cells

Answer 298

All of these

Answer 299

Each of them decreases

Answer 300

Copper increases and germanium decreases

Answer 301

Each of them increases

Answer 302

Copper decreases and germanium increases

Answer 303

180° Phase shift

Answer 304

No Phase shift

Answer 305

120° Phase shift

Answer 306

90° Phase shift

Answer 307

Diffusion region

Answer 308

Depletion region

Answer 309

None of these

Answer 310

Charged region

Answer 311

Several mega ohms

Answer 312

None of these

Answer 313

Microsecond

Answer 314

Nanosecond

Answer 315

Millisecond

Answer 316

None of these

Answer 317

n-type semiconductor

Answer 318

p-type semiconductor

Answer 319

n-type conductor

Answer 320

p-type conductor

Answer 321

Less than one

Answer 322

Equal to one

Answer 323

Greater than one

Answer 324

p-type conductor

Answer 325

n-type conductor

Answer 326

n-type semiconductor

Answer 327

p-type semiconductor

Answer 328

Equal number of free electrons and holes

Answer 329

Large number of free electrons and few holes

Answer 330

Large number of holes and electrons

Answer 331

Large number of holes and few electrons

Answer 332

From pure Si crystal

Answer 333

From pure Ge crystal

Answer 334

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 335

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 336

A basic universal gate

Answer 337

A basic gate

Answer 338

Not a universal gate

Answer 339

A universal gate

Answer 340

None of these

Answer 341

Forward biases

Answer 342

Reverse biased

Answer 343

A very high input impedance

Answer 344

A very low input impedance

Answer 345

None of these

Answer 346

A low output impedance

Answer 347

Electromagnetic Waves

Answer 348

Transverse Waves

Answer 349

Gamma Rays

Answer 350

Low degree resistor

Answer 351

Low degree radiations

Answer 352

Light dependent resistance

Answer 353

None of these

Answer 354

Electrons and protons

Answer 355

Electrons and holes

Answer 356

Holes and electrons

Answer 357

Protons and electrons

Answer 358

Electric motors

Answer 359

Transformers

Answer 360

Electric generations

Answer 361

n-type conductor

Answer 362

p-type conductor

Answer 363

n-type semiconductor

Answer 364

p-type semiconductor

Answer 365

Forward bias exceeds certain value

Answer 366

Forward current exceeds certain value

Answer 367

Reverse bias exceeds certain value

Answer 368

Potential barrier is reduced to zero

Answer 369

Crystal lattice

Answer 370

All of these

Answer 371

Copper decreases and germanium increases

Answer 372

Copper increases and germanium decreases

Answer 373

Each of them decreases

Answer 374

Each of them increases

Answer 375

The valence band is partially empty and the conduction band is partially filled

Answer 376

The valence band is completely filled

Answer 377

The valence band is completely filled and the conduction band is partially filled

Answer 378

The conduction band is completely empty

Answer 379

None of these

Answer 380

D.C. into A.C.

Answer 381

A.C. into D.C.

Answer 382

Low voltage to high voltage

Answer 383

High voltage to low voltage

Answer 384

Voltage gain

Answer 385

Input resistance

Answer 386

Current gain

Answer 387

None of these

Answer 388

Conduction band is empty and valence band is filled with electrons

Answer 389

Conduction band is filled with electrons and valence bad is empty

Answer 390

Conduction band is partially filled with electrons

Answer 391

Valence band is partially filled with electrons

Answer 392

Using a transistor

Answer 393

Using a Coolidge tube

Answer 394

Suppressing the harmonics in A.C voltage

Answer 395

Suppressing half wave of A.C supply by using diode

Answer 396

Works efficiently

Answer 397

None of these

Answer 398

Require more current

Answer 399

NAND gates

Answer 400

Phosphorus

Answer 401

Oscillator

Answer 402

Multivibrator

Answer 403

Both are at the same potential

Answer 404

Non-inverting terminal is at high potential

Answer 405

Inverting terminal is at high potential

Answer 406

Both are at the high potential

Answer 407

None of these

Answer 408

Man hundred

Answer 409

Super conductor

Answer 410

N-type material

Answer 411

Semiconductor

Answer 412

P-type material

Answer 413

10¯⁶ cm

Answer 414

10¯¹² cm

Answer 415

An amplifier

Answer 416

A rectifier

Answer 417

Filtering circuit

Answer 418

Missing electrons

Answer 419

Extra electrons

Answer 420

Increase its life

Answer 421

Enable it to Telerate higher voltage

Answer 422

Increase its electrical resistivity

Answer 423

Increase its electrical conductivity

Answer 424

Lowers the potential barrier

Answer 425

Increase the majority carrier current

Answer 426

Raises the potential barrier

Answer 427

Increase the minority carrier current

Answer 428

One PN-junction

Answer 429

Four PN-junctions

Answer 430

Three PN-junctions

Answer 431

Two PN-junctions

Answer 432

P-type material

Answer 433

Switching device

Answer 434

First A and B

Answer 435

Remains constant

Answer 436

Major current carriers are electrons

Answer 437

Major current carriers are mobile negative ions

Answer 438

Major current carriers are mobile holes

Answer 439

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 440

Resistor is used

Answer 441

None of these

Answer 442

Capacitor is used

Answer 443

Solvent is used

Answer 444

None of these

Answer 445

Semiconductor

Answer 446

Superconductor

Answer 447

Diode is reverse biased

Answer 448

Diode is forward based

Answer 449

Potential barrier in depletion layer increases

Answer 450

Potential barrier in depletion layer remains unchanged

Answer 451

Light display

Answer 452

Detection of light

Answer 453

None of these

Answer 454

Emission of light

Answer 455

Equal to electrons

Answer 456

Less than electrons

Answer 457

Greater than electrons

Answer 458

Chemical energy

Answer 459

Heat energy

Answer 460

Light energy

Answer 461

None of these

Answer 462

Transistor

Answer 463

Large number of holes and few electrons

Answer 464

Large number of free electrons and few holes

Answer 465

Equal number of free electrons and holes

Answer 466

Large number of holes and electrons

Answer 467

Resistance of copper decreases while that of germanium increases

Answer 468

Resistance of both decreases

Answer 469

Resistance of both increases

Answer 470

Resistance of copper increases while that of germanium decreases

Answer 471

Majority carriers

Answer 472

Dual carriers

Answer 473

Minority carriers

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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