Physics Electronics Online Mcqs Test

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Question 1

1. Which is normal used of transistor?

Answer

Switching device

Answer

P-type material

Question 2

2. In the transistor schematic symbol, the arrow

Answer

Is locate on the collector

Answer

Point from north to south

Answer

Is located on the base

Answer

Is located on the emitter

Question 3

3. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 4

4. When the conductivity of a semiconductor is only due, to breaking of covalent bonds, the semiconductor is called

Question 5

5. The width of a depletion layer in a p-n junction is

Answer

Increased by forward biasing

Answer

Is independent of voltage

Answer

Increased by reverse biasing

Answer

Decreased by reverse biasing

Question 6

6. The basic logic gate whose output is the complement of the input is the:

Answer

INVERTER gate

Answer

Comparator

Question 7

7. Young’s modulus for copper is

Answer

91 x 10 Nm¯²

Answer

None of these

Answer

110 Nm¯²

Answer

70 x 10 Nm¯²

Question 8

8. In half wave rectification

Answer

Current flows in pulses

Answer

None of these

Answer

Current flows in one directions

Answer

Only half cycle is used

Question 9

9. Which one is reverse-biased?

Question 10

10. When arsenic is added as an impurity to silicon, the resulting material is

Answer

P-type semiconductor

Answer

None of these

Answer

N-type semiconductor

Answer

N-type conductor

Question 11

11. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 12

12. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 13

13. When aluminum is added as an impurity to silicon, then resulting material is

Answer

p-type conductor

Answer

n-type semiconductor

Answer

p-type semiconductor

Answer

n-type conductor

Question 14

14. In Germanium crystal, impurity donor elements have valiancy

Question 15

15. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 16

16. In p-type semi-conductor, the majority charge carriers are

Question 17

17. Photovoltaic cell produces electrical energy from

Answer

None of these

Answer

Heat energy

Answer

Chemical energy

Answer

Light energy

Question 18

18. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Non-inverting voltage at output

Answer

Reference voltage on the other

Answer

Virtual input

Question 19

19. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 20

20. In reverse biasing of p-n junction, the resistance offered by the diode is of the order of

Answer

Several mega ohms

Question 21

21. A device which converts an alternating current to direct current is called

Answer

Oscillator

Answer

P-type material

Question 22

22. When n-p-n transistor is used as an amplifier,

Answer

Holes move from emitter to base

Answer

Holes move from base to emitter

Answer

Electrons move from base to collector

Answer

Holes move from emitter to base

Question 23

23. Depletion region of a junction is formed

Answer

During the manufacturing process

Answer

Under reverse bias

Answer

When temperature varies

Answer

Under forward bias

Question 24

24. In insulators

Answer

Valence band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Question 25

25. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Electrons and holes

Answer

Holes and electrons

Answer

Protons and electrons

Answer

Electrons and protons

Question 26

26. Photodiode is used for

Answer

Detection of light

Answer

Emission of light

Answer

Light display

Answer

None of these

Question 27

27. A NAND gate has:

Answer

LOW inputs and a LOW output

Answer

LOW inputs and a HIGH output

Answer

None of these

Answer

HIGH inputs and a HIGH output

Question 28

28. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 29

29. Conversion of low input a.c. into high output a.c. is called:

Answer

All of these

Answer

Rectification

Answer

Amplification

Answer

Magnification

Question 30

30. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 31

31. Non-inverting amplifier circuits have

Answer

A very high input impedance

Answer

None of these

Answer

A very low input impedance

Answer

A low output impedance

Question 32

32. Transistor can be used as

Answer

Full wave rectifier

Answer

Half wave rectifier

Question 33

33. When we apply reverse bias to a junction diode, it

Answer

Lowers the potential barrier

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Answer

Increase the majority carrier current

Question 34

34. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

AND gates, OR gates, and NOT gates

Answer

AND gates and NOT gates

Answer

OR gates only

Answer

Or gates and NOT gates

Question 35

35. When a strength changes the length of a body, it is called

Answer

Tensile stress

Answer

Shear stress

Answer

None of these

Answer

Compress ional stress

Question 36

36. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Increases slowly

Answer

Remain fixed

Answer

Suddenly increases

Answer

Decreases slowly

Question 37

37. Application of photodiode is/are

Answer

Detection of visible and invisible radiations

Answer

None of these

Answer

Automatic switching

Answer

Logic gates

Question 38

38. In a n-p-n transistor:

Answer

Holes move from emitter to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from base to collector

Answer

Negative charge moves from collector to base

Question 39

39. Semi-conductor germanium and silicon are

Answer

Pentavalent

Answer

Tetravalent

Question 40

40. The p-n junction diode works as insulator, if connected

Answer

None of these

Answer

In forward bias

Answer

In reverse bias

Question 41

41. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 42

42. In semiconductors at a room temperature

Answer

The conduction band is completely empty

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled

Question 43

43. When n-type of semiconductor is heated,

Answer

Number of electrons and holes remains same

Answer

Number of holes increases while that of holes decreases

Answer

Number of electrons and holes increases equally

Answer

Number of electrons increases while that of holes decreases

Question 44

44. The whole structure obtained by the repetition of unit cell is known as

Answer

Crystal lattice

Answer

All of these

Question 45

45. At absolute zero, Si acts as

Answer

None of these

Question 46

46. In forward bias the width of potential barrier

Answer

Remains same

Question 47

47. In semiconductors at a room temperature

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Question 48

48. The switch is open when the resistance between C and E becomes

Answer

None of these

Answer

Almost zero

Question 49

49. In a p-type semiconductor germanium is doped with:

Answer

All of above

Question 50

50. LDR means:

Answer

Light dependent resistance

Answer

Low degree radiations

Answer

None of these

Answer

Low degree resistor

Question 51

51. To use a transistor as an amplifier

Answer

No bias voltages are required

Answer

Both junctions are forward biased

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

Both junctions are reverse biased

Question 52

52. Which logic gate is represented by following diagram?

Question 53

53. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 54

54. In comma emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 55

55. A diode as a rectifier converts:

Answer

A.C. into D.C.

Answer

Low voltage to high voltage

Answer

High voltage to low voltage

Answer

D.C. into A.C.

Question 56

56. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Reversed biased

Answer

Forward biased

Answer

Zero biased

Answer

None of these

Question 57

57. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

Diode is neutralized

Answer

Diode is forward biased

Answer

None of these

Answer

Diode is reverse biased

Question 58

58. In n-type substances, the minority carriers are

Answer

None of these

Question 59

59. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 60

60. Which one is forward bias?

Question 61

61. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 62

62. The energy band gap is maximum in

Answer

Semiconductors

Answer

Superconductors

Answer

Insulators

Question 63

63. The ratio of tensile stress to tensile strain is called

Answer

None of these

Answer

Young’s modulus

Answer

Bulk’s modulus

Answer

Modulus of electricity

Question 64

64. In Germanium crystal, impurity donor elements have valiancy

Answer 160

Suppressing the harmonics in A.C voltage

Answer 161

Using a transistor

Answer 162

Using a Coolidge tube

Answer 163

Suppressing half wave of A.C supply by using diode

Answer 164

If either or both inputs are 1

Answer 165

Only if both inputs are 1

Answer 166

If both inputs are zero

Answer 167

If either input is zero

Answer 168

Temperature

Answer 169

Doping density

Answer 170

Forward bias

Answer 171

Diode design

Answer 172

None of these

Answer 173

Forward biases

Answer 174

Reverse biased

Answer 175

None of these

Answer 176

Four PN-junctions

Answer 177

Two PN-junctions

Answer 178

One PN-junction

Answer 179

Three PN-junctions

Answer 180

Can be any of the above three

Answer 181

Negative charged

Answer 182

Positively charged

Answer 183

None of these

Answer 184

Logic gates

Answer 185

Oscillator

Answer 186

any of above

Answer 187

Electrons move from base to emitter

Answer 188

Holes move from base to emitter

Answer 189

Electrons move from emitter to base

Answer 190

Electrons move from collector to base

Answer 191

Both collector and emitter are negative with respect to the base

Answer 192

Both collector and emitter are positive with respect to the base

Answer 193

Collector is positive and emitter is negative with respect to the base

Answer 194

Collector is positive and emitter is at negative potential as the base

Answer 195

Zero amplitude

Answer 196

Variable amplitude

Answer 197

Constant amplitude

Answer 198

Unit amplitude

Answer 199

Diffusion region

Answer 200

Charged region

Answer 201

Depletion region

Answer 202

None of these

Answer 203

Semiconductor

Answer 204

None of these

Answer 205

Superconductor

Answer 206

n-type conductor

Answer 207

p-type semiconductor

Answer 208

n-type semiconductor

Answer 209

p-type conductor

Answer 210

Remains constant

Answer 211

First A and B

Answer 212

Input and out signals are not in phase

Answer 213

May be in phase or not

Answer 214

Input and out signals are in phase

Answer 215

None of these

Answer 216

Copper increases and germanium decreases

Answer 217

Each of them increases

Answer 218

Copper decreases and germanium increases

Answer 219

Each of them decreases

Answer 220

Less than electrons

Answer 221

Equal to electrons

Answer 222

Greater than electrons

Answer 223

Transverse Waves

Answer 224

Electromagnetic Waves

Answer 225

Gamma Rays

Answer 226

Opposes the input signal

Answer 227

Is proportional to differential voltage gain

Answer 228

Is proportional to output current

Answer 229

Aids the input signal

Answer 230

Superconductor

Answer 231

An amplifier

Answer 232

Filtering circuit

Answer 233

A rectifier

Answer 234

Large number of holes and few electrons

Answer 235

Equal number of free electrons and holes

Answer 236

Large number of free electrons and few holes

Answer 237

Large number of holes and electrons

Answer 238

Remains unchanged

Answer 239

Decreases and then increases

Answer 240

It offers a very high inputs resistance to the input current

Answer 241

It offers a very low open loop gain all of above

Answer 242

None of these

Answer 243

It offers a very low output resistance

Answer 244

Phosphorus

Answer 245

Potential barrier in depletion layer increases

Answer 246

Diode is reverse biased

Answer 247

Diode is forward based

Answer 248

Potential barrier in depletion layer remains unchanged

Answer 249

All of these

Answer 250

None of these

Answer 251

Forward bias exceeds certain value

Answer 252

Forward current exceeds certain value

Answer 253

Potential barrier is reduced to zero

Answer 254

Reverse bias exceeds certain value

Answer 255

Common base configuration

Answer 256

None of these

Answer 257

Common emitter configuration

Answer 258

Common collector configuration

Answer 259

Phosphorus

Answer 260

Greater than one

Answer 261

Equal to one

Answer 262

Less than one

Answer 263

Copper increases and germanium decreases

Answer 264

Each of them decreases

Answer 265

Copper decreases and germanium increases

Answer 266

Each of them increases

Answer 267

Electric field is maximum

Answer 268

Potential is zero

Answer 269

Potential is maximum

Answer 270

Electric field is zero

Answer 271

Holes move from emitter be base

Answer 272

Electrons move from base to collector

Answer 273

Holes move from base to emitter

Answer 274

Holes move from emitter to base

Answer 275

Extra electrons

Answer 276

Missing electrons

Answer 277

Bulk modulus

Answer 278

None of these

Answer 279

Shear modulus

Answer 280

Young’s modulus

Answer 281

Thickness of collector

Answer 282

Thickness of emitter

Answer 283

Mean of thickness of emitter and collector

Answer 284

Very small as compared to the thickness of emitter and collector

Answer 285

Major current carriers are mobile negative ions

Answer 286

Major current carriers are mobile holes

Answer 287

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 288

Major current carriers are electrons

Answer 289

Input resistance

Answer 290

Voltage gain

Answer 291

None of these

Answer 292

Current gain

Answer 293

Not a universal gate

Answer 294

A basic gate

Answer 295

A basic universal gate

Answer 296

A universal gate

Answer 297

High voltage to low voltage

Answer 298

D.C. into A.C.

Answer 299

A.C. into D.C.

Answer 300

Low voltage to high voltage

Answer 301

Dual carriers

Answer 302

Majority carriers

Answer 303

Minority carriers

Answer 304

Holes move from emitter to base

Answer 305

Negative charge moves from collector to base

Answer 306

Holes move from base to collector

Answer 307

Negative charge moves from emitter to base

Answer 308

n-type semiconductor

Answer 309

n-type conductor

Answer 310

p-type conductor

Answer 311

p-type semiconductor

Answer 312

None of these

Answer 313

Multivibrator

Answer 314

Oscillator

Answer 315

Either emitter or collector

Answer 316

None of these

Answer 317

Free electrons

Answer 318

Tightly bound electrons

Answer 319

Valence electrons

Answer 320

At least one input is LOW

Answer 321

All inputs are HIGH

Answer 322

At least one input is HIGH

Answer 323

All inputs are LOW

Answer 324

The light emitting diode

Answer 325

The switch

Answer 326

The photo diodes

Answer 327

Solar cells

Answer 328

None of these

Answer 329

Semiconductor

Answer 330

Any of above

Answer 331

n-carriers and p-carriers respectively

Answer 332

p-carriers only

Answer 333

p-carriers and n-carriers respectively

Answer 334

n-carriers only

Answer 335

Conduction band is partially filled with electrons

Answer 336

Conduction band is empty and valence band is filled with electrons

Answer 337

Valence band is partially filled with electrons

Answer 338

Conduction band is filled with electrons and valence band is empty

Answer 339

Slightly less than emitter current

Answer 340

Any of above

Answer 341

Equal to emitter current

Answer 342

Greater than emitter current

Answer 343

High potential at P side and low potential at N side

Answer 344

Undetermined

Answer 345

P and N both are at same potential

Answer 346

High potential at N side and low potential at P side

Answer 347

Raises the potential barrier

Answer 348

Lowers the potential barrier

Answer 349

Increase the minority carrier current

Answer 350

Increases the majority carrier current

Answer 351

Mobile ions

Answer 352

Immobile ions

Answer 353

Any of the above depending on nature of transistor

Answer 354

Electric motors

Answer 355

Transformers

Answer 356

Electric generations

Answer 357

Both are at the same potential

Answer 358

Both are at the high potential

Answer 359

Non-inverting terminal is at high potential

Answer 360

Inverting terminal is at high potential

Answer 361

Electric field is zero

Answer 362

Potential is zero

Answer 363

Electric field is maximum

Answer 364

Potential is maximum

Answer 365

Step up transformer

Answer 366

Step down transformer

Answer 367

Triode vacuum tube

Answer 368

Three diodes in common

Answer 369

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 370

From pure Si crystal

Answer 371

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 372

From pure Ge crystal

Answer 373

Missing of electrons

Answer 374

Extra electrons

Answer 375

Increases its electrical conductivity

Answer 376

Enable it to Telerate higher voltage

Answer 377

Increase its life

Answer 378

Increase its electrical resistivity

Answer 379

Logic gates

Answer 380

Oscillator

Answer 381

Insulators

Answer 382

Superconductors

Answer 383

Conductors

Answer 384

Semiconductors

Answer 385

Depends upon the nature of material

Answer 386

Drift of charges

Answer 387

Both drift and diffusion of charges

Answer 388

Diffusion of charges

Answer 389

Increases the majority carrier current

Answer 390

Increase the minority carrier current

Answer 391

Raises the potential barrier

Answer 392

Lowers the potential barrier

Answer 393

None of these

Answer 394

Man hundred

Answer 395

Decreased by reverse biasing

Answer 396

Increased by forward biasing

Answer 397

Is independent of voltage

Answer 398

Increased by reverse biasing

Answer 399

10¯¹² cm

Answer 400

10¯⁶ cm

Answer 401

Major current carrier is electrons

Answer 402

The number of mobile holes exceeds the number of acceptors

Answer 403

Major carrier is mobile holes

Answer 404

Major carrier is mobile negative ions

Answer 405

That the emitter be heated

Answer 406

That the base be heated

Answer 407

None of these

Answer 408

That the collector be heated

Answer 409

Phosphorus

Answer 410

Resistor is used

Answer 411

Capacitor is used

Answer 412

None of these

Answer 413

Solvent is used

Answer 414

Oscillator

Answer 415

Holes in n-type and p-type

Answer 416

Free electrons in n-type and holes in p-type

Answer 417

Free electrons in n-type and p-type

Answer 418

Holes in n-type and free electrons in p-type

Answer 419

NAND gates

Answer 420

Remains unchanged

Answer 421

Decreases and then increases

Answer 422

Semiconductors

Answer 423

Superconductors

Answer 424

Insulators

Answer 425

Increase its life

Answer 426

Increase its electrical resistivity

Answer 427

Increase its electrical conductivity

Answer 428

Enable it to Telerate higher voltage

Answer 429

None of these

Answer 430

Works efficiently

Answer 431

Require more current

Answer 432

P-type material

Answer 433

N-type material

Answer 434

Semiconductor

Answer 435

Super conductor

Answer 436

None of these

Answer 437

Hidden energy states

Answer 438

Forbidden energy states

Answer 439

Band levels

Answer 440

180° Phase shift

Answer 441

No Phase shift

Answer 442

120° Phase shift

Answer 443

90° Phase shift

Answer 444

Resistance of both decreases

Answer 445

Resistance of both increases

Answer 446

Resistance of copper increases while that of germanium decreases

Answer 447

Resistance of copper decreases while that of germanium increases

Answer 448

Major current carriers are mobile negative ions

Answer 449

Major current carriers are mobile holes

Answer 450

Major current carriers are electrons

Answer 451

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 452

None of these

Answer 453

None of these

Answer 454

may be p-type or n-type

Answer 455

Equal number of free electrons and holes

Answer 456

Large number of holes and few electrons

Answer 457

Large number of free electrons and few holes

Answer 458

Large number of holes and electrons

Answer 459

Phosphorus

Answer 460

It has high resistance to the current flow when reverse biased

Answer 461

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 462

It has low resistance to the current flow when forward biased

Answer 463

Its conductivity increases with rise of temperature

Answer 464

Off switch

Answer 465

Polymeric solids

Answer 466

Amorphous solids

Answer 467

Crystalline solids

Answer 468

Glassy solids

Answer 469

None of these

Answer 470

Nanosecond

Answer 471

Millisecond

Answer 472

Microsecond

Answer 473

None of these

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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