Physics Electronics Online Mcqs Test

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Question 1

1. The forward resistance of the diode is

Answer

None of these

Question 2

2. Which one is forward bias?

Question 3

3. In a PN junction

Answer

Undetermined

Answer

High potential at N side and low potential at P side

Answer

High potential at P side and low potential at N side

Answer

P and N both are at same potential

Question 4

4. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 5

5. When the conductivity of a semiconductor is only due, to breaking of covalent bonds, the semiconductor is called

Question 6

6. Application of photodiode is/are

Answer

Detection of visible and invisible radiations

Answer

Logic gates

Answer

Automatic switching

Answer

None of these

Question 7

7. In a junction diode, the holes are due to

Answer

Missing of electrons

Answer

Extra electrons

Question 8

8. Which one is reverse-biased?

Question 9

9. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 10

10. In insulators

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Question 11

11. Reverse bias applied on a junction diode

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Answer

Increases the majority carrier current

Answer

Raises the potential barrier

Question 12

12. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 13

13. A n-p-n transistor conducts when

Answer

Both collector and emitter are positive with respect to the base

Answer

Collector is positive and emitter is at negative potential as the base

Answer

Collector is positive and emitter is negative with respect to the base

Answer

Both collector and emitter are negative with respect to the base

Question 14

14. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Unit amplitude

Answer

Zero amplitude

Answer

Variable amplitude

Answer

Constant amplitude

Question 15

15. The number of junctions in the PNP transistor are

Question 16

16. Photodiode is used for

Answer

Light display

Answer

Detection of light

Answer

Emission of light

Answer

None of these

Question 17

17. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 18

18. When aluminum is added as an impurity to silicon, then resulting material is

Answer

p-type semiconductor

Answer

p-type conductor

Answer

n-type semiconductor

Answer

n-type conductor

Question 19

19. The ratio of tensile stress to tensile strain is called

Answer

None of these

Answer

Modulus of electricity

Answer

Young’s modulus

Answer

Bulk’s modulus

Question 20

20. The operation of a transistor requires

Answer

That the base be heated

Answer

That the collector be heated

Answer

That the emitter be heated

Answer

None of these

Question 21

21. The simplest type of rectification known as half wave rectification is obtained by

Answer

Suppressing half wave of A.C supply by using diode

Answer

Using a transistor

Answer

Using a Coolidge tube

Answer

Suppressing the harmonics in A.C voltage

Question 22

22. The electrical circuit used to bet smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 23

23. The semiconductor diode can be used as a rectifier because _

Answer

It has high resistance to the current flow when reverse biased

Answer

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer

It has low resistance to the current flow when forward biased

Answer

Its conductivity increases with rise of temperature

Question 24

24. In forward bias, the width of potential barrier in a p-n junction diode

Answer

First A and B

Answer

Remains constant

Question 25

25. In semiconductors at a room temperature

Answer

The valence band is completely filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is partially empty and the conduction band is partially filled

Question 26

26. Polythene, potystrene and nylon are examples of

Answer

Crystalline solids

Answer

Amorphous solids

Answer

Glassy solids

Answer

Polymeric solids

Question 27

27. A substance which have empty conduction band is called

Answer

None of these

Answer

Semiconductor

Question 28

28. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increase its life

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical resistivity

Answer

Increases its electrical conductivity

Question 29

29. The device or circuit used for conversion of A.C. into D.C. is called

Answer

A rectifier

Answer

Filtering circuit

Answer

An amplifier

Question 30

30. Reverse bias applied on a junction diode

Answer

Increases the majority carrier current

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Question 31

31. The critical temperature for mercury is

Question 32

32. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

None of these

Answer

Oscillator

Question 33

33. A transistor consists of

Answer

One PN-junction

Answer

Three PN-junctions

Answer

Four PN-junctions

Answer

Two PN-junctions

Question 34

34. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 35

35. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is zero

Answer

Potential is zero

Answer

Potential is maximum

Answer

Electric field is maximum

Question 36

36. In forward bias the width of potential barrier

Answer

Remains same

Question 37

37. When n-p-n transistor is used as an amplifier,

Answer

Holes move from emitter to base

Answer

Electrons move from base to collector

Answer

Holes move from emitter to base

Answer

Holes move from base to emitter

Question 38

38. The transistor provide good power amplification when they are used in

Answer

Common base configuration

Answer

None of these

Answer

Common emitter configuration

Answer

Common collector configuration

Question 39

39. When a p-n junction diode is reverse biased, the flow of current across the junction is mainly due to

Answer

Drift of charges

Answer

Both drift and diffusion of charges

Answer

Depends upon the nature of material

Answer

Diffusion of charges

Question 40

40. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 41

41. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 42

42. A device which converts an alternating current to direct current is called

Answer

P-type material

Answer

Oscillator

Question 43

43. In Germanium crystal, impurity donor elements have valiancy

Question 44

44. The potential difference across the depletion region of silicon is

Question 45

45. The width of a depletion layer in a p-n junction is

Answer

Decreased by reverse biasing

Answer

Is independent of voltage

Answer

Increased by forward biasing

Answer

Increased by reverse biasing

Question 46

46. p-n junction when reversed biased acts as a

Answer

Off switch

Question 47

47. Output voltage in full wave rectification is not smooth. In order to have smooth output voltage

Answer

Solvent is used

Answer

None of these

Answer

Resistor is used

Answer

Capacitor is used

Question 48

48. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 49

49. The gain A of the amplifier is of the order of

Answer

Man hundred

Answer

None of these

Question 50

50. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Non-inverting voltage at output

Answer

Reference voltage on the other

Answer

Virtual input

Question 51

51. The materials in which valence band and conduction band overlap are called

Answer

Semiconductors

Answer

Insulators

Answer

Superconductors

Answer

Conductors

Question 52

52. The p-n junction diode works as insulator, if connected

Answer

In reverse bias

Answer

None of these

Answer

In forward bias

Question 53

53. When a semiconductor is continuously heated, then value of its resistance

Answer

Remains unchanged

Answer

Decreases and then increases

Question 54

54. Diode can work as

Answer

Oscillator

Answer

Multivibrator

Question 55

55. In a p-type semiconductor germanium is doped with:

Answer

All of these

Question 56

56. What input values will cause an AND logic gate to produce a HIGH output?

Answer

At least one input is HIGH

Answer

All inputs are HIGH

Answer

All inputs are LOW

Answer

At least one input is LOW

Question 57

57. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is maximum

Answer

Electric field is zero

Answer

Potential is zero

Answer

Potential is maximum

Question 58

58. N-type crystal is

Answer

Negative charged

Answer

Positively charged

Answer

None of these

Question 59

59. In half wave rectification

Answer

Current flows in one directions

Answer

None of these

Answer

Only half cycle is used

Answer

Current flows in pulses

Question 60

60. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 61

61. In p-type semiconductor

Answer

Major current carrier is electrons

Answer

Major carrier is mobile holes

Answer

The number of mobile holes exceeds the number of acceptors

Answer

Major carrier is mobile negative ions

Question 62

62. Electrons present in p-type material due to thermal pair generation are

Answer

Dual carriers

Answer

Minority carriers

Answer

Majority carriers

Question 63

63. When a semiconductor is continuously heated, then value of its resistance

Answer

Remains unchanged

Answer

Decreases and then increases

Question 64

64. When a strength changes the length of a body, it is called

Answer

Tensile stress

Answer

Shear stress

Answer

Compress ional stress

Answer

None of these

Answer 164

None of these

Answer 165

Diode is reverse biased

Answer 166

Diode is forward biased

Answer 167

Diode is neutralized

Answer 168

Input and out signals are not in phase

Answer 169

Input and out signals are in phase

Answer 170

May be in phase or not

Answer 171

None of these

Answer 172

Superconductors

Answer 173

Insulators

Answer 174

Semiconductors

Answer 175

None of these

Answer 176

Copper increases and germanium decreases

Answer 177

Each of them decreases

Answer 178

Each of them increases

Answer 179

Copper decreases and germanium increases

Answer 180

Phosphorus

Answer 181

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 182

From pure Si crystal

Answer 183

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 184

From pure Ge crystal

Answer 185

P-type material

Answer 186

Super conductor

Answer 187

Semiconductor

Answer 188

N-type material

Answer 189

Several mega ohms

Answer 190

Is proportional to differential voltage gain

Answer 191

Opposes the input signal

Answer 192

Is proportional to output current

Answer 193

Aids the input signal

Answer 194

Pentavalent

Answer 195

Tetravalent

Answer 196

LOW inputs and a LOW output

Answer 197

None of these

Answer 198

HIGH inputs and a HIGH output

Answer 199

LOW inputs and a HIGH output

Answer 200

70 x 10 Nm¯²

Answer 201

110 Nm¯²

Answer 202

None of these

Answer 203

91 x 10 Nm¯²

Answer 204

If either or both inputs are 1

Answer 205

Only if both inputs are 1

Answer 206

If either input is zero

Answer 207

If both inputs are zero

Answer 208

None of these

Answer 209

It offers a very low open loop gain all of above

Answer 210

It offers a very high inputs resistance to the input current

Answer 211

It offers a very low output resistance

Answer 212

The switch

Answer 213

The light emitting diode

Answer 214

Solar cells

Answer 215

The photo diodes

Answer 216

None of these

Answer 217

Reverse biased

Answer 218

None of these

Answer 219

Forward biases

Answer 220

Full wave rectifier

Answer 221

Half wave rectifier

Answer 222

Insulators

Answer 223

Superconductors

Answer 224

Semiconductors

Answer 225

Oscillator

Answer 226

Phosphorus

Answer 227

No bias voltages are required

Answer 228

Both junctions are reverse biased

Answer 229

Both junctions are forward biased

Answer 230

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 231

None of these

Answer 232

Require more current

Answer 233

Works efficiently

Answer 234

Is located on the emitter

Answer 235

Is locate on the collector

Answer 236

Is located on the base

Answer 237

Point from north to south

Answer 238

p-type conductor

Answer 239

n-type semiconductor

Answer 240

n-type conductor

Answer 241

p-type semiconductor

Answer 242

Each of them increases

Answer 243

Copper increases and germanium decreases

Answer 244

Copper decreases and germanium increases

Answer 245

Each of them decreases

Answer 246

Light dependent resistance

Answer 247

Low degree radiations

Answer 248

None of these

Answer 249

Low degree resistor

Answer 250

Under reverse bias

Answer 251

Under forward bias

Answer 252

During the manufacturing process

Answer 253

When temperature varies

Answer 254

None of these

Answer 255

Transistor

Answer 256

Increase its electrical conductivity

Answer 257

Increase its life

Answer 258

Enable it to Telerate higher voltage

Answer 259

Increase its electrical resistivity

Answer 260

Reverse bias exceeds certain value

Answer 261

Forward current exceeds certain value

Answer 262

Potential barrier is reduced to zero

Answer 263

Forward bias exceeds certain value

Answer 264

The valence band is completely filled

Answer 265

The valence band is completely filled and the conduction band is partially filled

Answer 266

The valence band is partially empty and the conduction band is partially filled

Answer 267

The conduction band is completely empty

Answer 268

Both A.C. & D.C.

Answer 269

None of these

Answer 270

Equal to emitter current

Answer 271

Slightly less than emitter current

Answer 272

Greater than emitter current

Answer 273

Any of above

Answer 274

Large number of free electrons and few holes

Answer 275

Equal number of free electrons and holes

Answer 276

Large number of holes and electrons

Answer 277

Large number of holes and few electrons

Answer 278

Superconductor

Answer 279

Either emitter or collector

Answer 280

Holes move from emitter to base

Answer 281

Holes move from emitter be base

Answer 282

Electrons move from base to collector

Answer 283

Holes move from base to emitter

Answer 284

None of these

Answer 285

Superconductor

Answer 286

Semiconductor

Answer 287

All of these

Answer 288

Magnification

Answer 289

Rectification

Answer 290

Amplification

Answer 291

Light energy

Answer 292

Chemical energy

Answer 293

Heat energy

Answer 294

None of these

Answer 295

Oscillator

Answer 296

Logic gates

Answer 297

Step up transformer

Answer 298

Step down transformer

Answer 299

Three diodes in common

Answer 300

Triode vacuum tube

Answer 301

Increased by reverse biasing

Answer 302

Increased by forward biasing

Answer 303

Decreased by reverse biasing

Answer 304

Is independent of voltage

Answer 305

Semiconductor

Answer 306

10¯⁶ cm

Answer 307

10¯¹² cm

Answer 308

D.C. into A.C.

Answer 309

High voltage to low voltage

Answer 310

Low voltage to high voltage

Answer 311

A.C. into D.C.

Answer 312

None of these

Answer 313

All of above

Answer 314

Phosphorus

Answer 315

Switching device

Answer 316

P-type material

Answer 317

None of these

Answer 318

Crystal lattice

Answer 319

All of these

Answer 320

Remain fixed

Answer 321

Decreases slowly

Answer 322

Increases slowly

Answer 323

Suddenly increases

Answer 324

Electrons and holes

Answer 325

Electrons and protons

Answer 326

Protons and electrons

Answer 327

Holes and electrons

Answer 328

Equal to electrons

Answer 329

Less than electrons

Answer 330

Greater than electrons

Answer 331

Voltage gain

Answer 332

Current gain

Answer 333

None of these

Answer 334

Input resistance

Answer 335

any of above

Answer 336

None of these

Answer 337

Tightly bound electrons

Answer 338

None of these

Answer 339

Free electrons

Answer 340

Valence electrons

Answer 341

Depletion region

Answer 342

None of these

Answer 343

Diffusion region

Answer 344

Charged region

Answer 345

p-type semiconductor

Answer 346

n-type semiconductor

Answer 347

n-type conductor

Answer 348

p-type conductor

Answer 349

Inverting terminal is at high potential

Answer 350

Both are at the same potential

Answer 351

Non-inverting terminal is at high potential

Answer 352

Both are at the high potential

Answer 353

None of these

Answer 354

Young’s modulus

Answer 355

Bulk modulus

Answer 356

Shear modulus

Answer 357

Electromagnetic Waves

Answer 358

Transverse Waves

Answer 359

Gamma Rays

Answer 360

Mobile ions

Answer 361

Immobile ions

Answer 362

Electrons move from emitter to base

Answer 363

Electrons move from collector to base

Answer 364

Holes move from base to emitter

Answer 365

Electrons move from base to emitter

Answer 366

Number of electrons and holes remains same

Answer 367

Number of electrons and holes increases equally

Answer 368

Number of holes increases while that of holes decreases

Answer 369

Number of electrons increases while that of holes decreases

Answer 370

None of these

Answer 371

Reversed biased

Answer 372

Forward biased

Answer 373

Zero biased

Answer 374

may be p-type or n-type

Answer 375

None of these

Answer 376

None of these

Answer 377

Almost zero

Answer 378

Potential barrier in depletion layer remains unchanged

Answer 379

Diode is reverse biased

Answer 380

Diode is forward based

Answer 381

Potential barrier in depletion layer increases

Answer 382

Negative charge moves from collector to base

Answer 383

Holes move from emitter to base

Answer 384

Holes move from base to collector

Answer 385

Negative charge moves from emitter to base

Answer 386

Free electrons in n-type and p-type

Answer 387

Free electrons in n-type and holes in p-type

Answer 388

Holes in n-type and p-type

Answer 389

Holes in n-type and free electrons in p-type

Answer 390

N-type conductor

Answer 391

None of these

Answer 392

N-type semiconductor

Answer 393

P-type semiconductor

Answer 394

Hidden energy states

Answer 395

Forbidden energy states

Answer 396

Band levels

Answer 397

None of these

Answer 398

Major current carriers are mobile negative ions

Answer 399

Major current carriers are electrons

Answer 400

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 401

Major current carriers are mobile holes

Answer 402

Equal to one

Answer 403

Greater than one

Answer 404

Less than one

Answer 405

Thickness of collector

Answer 406

Mean of thickness of emitter and collector

Answer 407

Very small as compared to the thickness of emitter and collector

Answer 408

Thickness of emitter

Answer 409

Major current carriers are electrons

Answer 410

Major current carriers are mobile holes

Answer 411

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 412

Major current carriers are mobile negative ions

Answer 413

p-carriers and n-carriers respectively

Answer 414

p-carriers only

Answer 415

n-carriers only

Answer 416

n-carriers and p-carriers respectively

Answer 417

Microsecond

Answer 418

Millisecond

Answer 419

Nanosecond

Answer 420

None of these

Answer 421

Transformers

Answer 422

Electric motors

Answer 423

Electric generations

Answer 424

A very high input impedance

Answer 425

A very low input impedance

Answer 426

A low output impedance

Answer 427

None of these

Answer 428

Comparator

Answer 429

INVERTER gate

Answer 430

Diode design

Answer 431

Forward bias

Answer 432

Temperature

Answer 433

Doping density

Answer 434

Any of the above depending on nature of transistor

Answer 435

A.C. into D.C.

Answer 436

High voltage to low voltage

Answer 437

Low voltage to high voltage

Answer 438

D.C. into A.C.

Answer 439

Increase the majority carrier current

Answer 440

Increase the minority carrier current

Answer 441

Raises the potential barrier

Answer 442

Lowers the potential barrier

Answer 443

Resistance of copper decreases while that of germanium increases

Answer 444

Resistance of both decreases

Answer 445

Resistance of copper increases while that of germanium decreases

Answer 446

Resistance of both increases

Answer 447

Holes move from emitter to base

Answer 448

Negative charge moves from collector to base

Answer 449

Negative charge moves from emitter to base

Answer 450

Holes move from base to collector

Answer 451

No Phase shift

Answer 452

120° Phase shift

Answer 453

180° Phase shift

Answer 454

90° Phase shift

Answer 455

Any of above

Answer 456

Large number of holes and few electrons

Answer 457

Large number of free electrons and few holes

Answer 458

Large number of holes and electrons

Answer 459

Equal number of free electrons and holes

Answer 460

A basic gate

Answer 461

Not a universal gate

Answer 462

A basic universal gate

Answer 463

A universal gate

Answer 464

Phosphorus

Answer 465

AND gates and NOT gates

Answer 466

Or gates and NOT gates

Answer 467

AND gates, OR gates, and NOT gates

Answer 468

OR gates only

Answer 469

None of these

Answer 470

Conduction band is empty and valence band is filled with electrons

Answer 471

Valence band is partially filled with electrons

Answer 472

Conduction band is filled with electrons and valence band is empty

Answer 473

Conduction band is partially filled with electrons

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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