Physics Electronics Online Mcqs Test

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Question 1

1. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is maximum

Answer

Potential is zero

Answer

Electric field is zero

Answer

Potential is maximum

Question 2

2. A device which converts an alternating current to direct current is called

Answer

Oscillator

Answer

P-type material

Question 3

3. Depletion region of a junction is formed

Answer

Under reverse bias

Answer

During the manufacturing process

Answer

When temperature varies

Answer

Under forward bias

Question 4

4. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 5

5. The whole structure obtained by the repetition of unit cell is known as

Answer

Crystal lattice

Answer

All of these

Question 6

6. Arsenic, antimony or phosphorus are impurities of

Answer

None of these

Answer

may be p-type or n-type

Question 7

7. In a semiconductor, the mobility of holes is

Answer

Greater than electrons

Answer

Less than electrons

Answer

Equal to electrons

Question 8

8. N-type crystal is

Answer

Positively charged

Answer

None of these

Answer

Negative charged

Question 9

9. In Germanium crystal, impurity donor elements have valiancy

Question 10

10. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 11

11. At absolute zero, Si acts as

Answer

None of these

Question 12

12. A signal applied at the non-inverting input, of an O.P that appears after amplification at the output terminal, with

Answer

180° Phase shift

Answer

No Phase shift

Answer

120° Phase shift

Answer

90° Phase shift

Question 13

13. The transistor provide good power amplification when they are used in

Answer

Common collector configuration

Answer

Common base configuration

Answer

None of these

Answer

Common emitter configuration

Question 14

14. The basic logic gate whose output is the complement of the input is the:

Answer

Comparator

Answer

INVERTER gate

Question 15

15. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical conductivity

Answer

Increase its life

Answer

Increase its electrical resistivity

Question 16

16. In reverse biasing of p-n junction, the resistance offered by the diode is of the order of

Answer

Several mega ohms

Question 17

17. In the transistor schematic symbol, the arrow

Answer

Point from north to south

Answer

Is located on the emitter

Answer

Is locate on the collector

Answer

Is located on the base

Question 18

18. If a signal passing through a gate is inhibited by sending a low into one of the inputs, and the output is HIGH, the gate is a(n):

Question 19

19. In n-p-n transistor, p works as

Answer

Any of above

Question 20

20. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

The photo diodes

Answer

The switch

Answer

Solar cells

Answer

The light emitting diode

Question 21

21. When arsenic is added as an impurity to silicon, the resulting material is

Answer

N-type semiconductor

Answer

N-type conductor

Answer

None of these

Answer

P-type semiconductor

Question 22

22. The units of modulus of elasticity are same as that of

Answer

None of these

Question 23

23. The operation of a transistor requires

Answer

None of these

Answer

That the collector be heated

Answer

That the emitter be heated

Answer

That the base be heated

Question 24

24. Polythene, potystrene and nylon are examples of

Answer

Amorphous solids

Answer

Crystalline solids

Answer

Glassy solids

Answer

Polymeric solids

Question 25

25. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 26

26. Photodiode is used for

Answer

Emission of light

Answer

Detection of light

Answer

None of these

Answer

Light display

Question 27

27. At room temperature, a p-type semi-conductor has

Answer

Large number of free electrons and few holes

Answer

Equal number of free electrons and holes

Answer

Large number of holes and few electrons

Answer

Large number of holes and electrons

Question 28

28. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 29

29. n-type germanium is obtained on doping intrinsic germanium with

Answer

Phosphorus

Question 30

30. Reverse bias applied on a junction diode

Answer

Raises the potential barrier

Answer

Increases the majority carrier current

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Question 31

31. The width of a depletion layer in a p-n junction is

Answer

Increased by forward biasing

Answer

Decreased by reverse biasing

Answer

Increased by reverse biasing

Answer

Is independent of voltage

Question 32

32. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 33

33. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Holes and electrons

Answer

Electrons and holes

Answer

Electrons and protons

Answer

Protons and electrons

Question 34

34. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 35

35. In semiconductors at a room temperature

Answer

The conduction band is completely empty

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled

Answer

The valence band is completely filled and the conduction band is partially filled

Question 36

36. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Equal to one

Answer

Greater than one

Answer

Less than one

Question 37

37. Conversion of low input a.c. into high output a.c. is called:

Answer

Magnification

Answer

Rectification

Answer

All of these

Answer

Amplification

Question 38

38. In p-n-p transistor the collector current is

Answer

Any of above

Answer

Equal to emitter current

Answer

Greater than emitter current

Answer

Slightly less than emitter current

Question 39

39. The part of a transistor, which is heavily doped to produce a large number of majority carriers, is

Answer

None of these

Question 40

40. When an alternating accelerating field is applied to a charge it produces

Answer

Transverse Waves

Answer

Electromagnetic Waves

Answer

Gamma Rays

Question 41

41. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

Hidden energy states

Answer

Forbidden energy states

Answer

None of these

Answer

Band levels

Question 42

42. Transistors with various combinations are widely used as switches in:

Answer

Electric motors

Answer

Electric generations

Answer

Transformers

Question 43

43. At room temperature, a p-type semi-conductor has

Answer

Equal number of free electrons and holes

Answer

Large number of holes and electrons

Answer

Large number of free electrons and few holes

Answer

Large number of holes and few electrons

Question 44

44. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 45

45. A diode as a rectifier converts:

Answer

High voltage to low voltage

Answer

D.C. into A.C.

Answer

Low voltage to high voltage

Answer

A.C. into D.C.

Question 46

46. In semiconductors at a room temperature

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled

Question 47

47. Due to the break down the p-n junction suffers

Answer

Require more current

Answer

None of these

Answer

Works efficiently

Question 48

48. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type conductor

Answer

p-type semiconductor

Answer

n-type semiconductor

Answer

p-type conductor

Question 49

49. Symbol represents

Question 50

50. The positive sign of gain indicates that

Answer

May be in phase or not

Answer

Input and out signals are not in phase

Answer

None of these

Answer

Input and out signals are in phase

Question 51

51. Which one is reverse-biased?

Question 52

52. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 53

53. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 54

54. The gain A of the amplifier is of the order of

Answer

None of these

Answer

Man hundred

Question 55

55. LDR means:

Answer

Low degree radiations

Answer

None of these

Answer

Low degree resistor

Answer

Light dependent resistance

Question 56

56. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Increases slowly

Answer

Decreases slowly

Answer

Remain fixed

Answer

Suddenly increases

Question 57

57. A NAND gate has:

Answer

LOW inputs and a HIGH output

Answer

None of these

Answer

HIGH inputs and a HIGH output

Answer

LOW inputs and a LOW output

Question 58

58. A p-n junction has a thickness of the order of:

Answer

10¯⁶ cm

Answer

10¯¹² cm

Question 59

59. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Diode is forward based

Answer

Potential barrier in depletion layer increases

Answer

Potential barrier in depletion layer remains unchanged

Answer

Diode is reverse biased

Question 60

60. The electrical circuit used to bet smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 61

61. Which logic gate is represented by following diagram?

Question 62

62. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 63

63. Young’s modulus for copper is

Answer

None of these

Answer

70 x 10 Nm¯²

Answer

91 x 10 Nm¯²

Answer

110 Nm¯²

Question 64

64. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Answer 169

Either emitter or collector

Answer 170

Step up transformer

Answer 171

Step down transformer

Answer 172

Triode vacuum tube

Answer 173

Three diodes in common

Answer 174

Remains same

Answer 175

Bulk modulus

Answer 176

None of these

Answer 177

Shear modulus

Answer 178

Young’s modulus

Answer 179

All of these

Answer 180

Negative charge moves from collector to base

Answer 181

Negative charge moves from emitter to base

Answer 182

Holes move from base to collector

Answer 183

Holes move from emitter to base

Answer 184

Holes in n-type and free electrons in p-type

Answer 185

Free electrons in n-type and holes in p-type

Answer 186

Free electrons in n-type and p-type

Answer 187

Holes in n-type and p-type

Answer 188

None of these

Answer 189

Shear stress

Answer 190

Compress ional stress

Answer 191

Tensile stress

Answer 192

None of these

Answer 193

A very high input impedance

Answer 194

A very low input impedance

Answer 195

A low output impedance

Answer 196

Modulus of electricity

Answer 197

Young’s modulus

Answer 198

Bulk’s modulus

Answer 199

None of these

Answer 200

Each of them decreases

Answer 201

Copper increases and germanium decreases

Answer 202

Copper decreases and germanium increases

Answer 203

Each of them increases

Answer 204

Oscillator

Answer 205

Multivibrator

Answer 206

Semiconductors

Answer 207

Insulators

Answer 208

Superconductors

Answer 209

Logic gates

Answer 210

Oscillator

Answer 211

OR gates only

Answer 212

AND gates, OR gates, and NOT gates

Answer 213

AND gates and NOT gates

Answer 214

Or gates and NOT gates

Answer 215

Charged region

Answer 216

Diffusion region

Answer 217

None of these

Answer 218

Depletion region

Answer 219

All inputs are HIGH

Answer 220

At least one input is LOW

Answer 221

All inputs are LOW

Answer 222

At least one input is HIGH

Answer 223

Transistor

Answer 224

Phosphorus

Answer 225

Any of the above depending on nature of transistor

Answer 226

Holes move from base to emitter

Answer 227

Holes move from emitter be base

Answer 228

Holes move from emitter to base

Answer 229

Electrons move from base to collector

Answer 230

Full wave rectifier

Answer 231

Half wave rectifier

Answer 232

None of these

Answer 233

A basic gate

Answer 234

A universal gate

Answer 235

Not a universal gate

Answer 236

A basic universal gate

Answer 237

Forward bias exceeds certain value

Answer 238

Reverse bias exceeds certain value

Answer 239

Forward current exceeds certain value

Answer 240

Potential barrier is reduced to zero

Answer 241

Electric field is maximum

Answer 242

Potential is zero

Answer 243

Electric field is zero

Answer 244

Potential is maximum

Answer 245

Three PN-junctions

Answer 246

One PN-junction

Answer 247

Two PN-junctions

Answer 248

Four PN-junctions

Answer 249

Valence electrons

Answer 250

Free electrons

Answer 251

None of these

Answer 252

Tightly bound electrons

Answer 253

None of these

Answer 254

None of these

Answer 255

Drift of charges

Answer 256

Both drift and diffusion of charges

Answer 257

Depends upon the nature of material

Answer 258

Diffusion of charges

Answer 259

Electrons move from base to emitter

Answer 260

Electrons move from collector to base

Answer 261

Holes move from base to emitter

Answer 262

Electrons move from emitter to base

Answer 263

Inverting terminal is at high potential

Answer 264

Both are at the high potential

Answer 265

Both are at the same potential

Answer 266

Non-inverting terminal is at high potential

Answer 267

None of these

Answer 268

Almost zero

Answer 269

any of above

Answer 270

Lowers the potential barrier

Answer 271

Increase the minority carrier current

Answer 272

Raises the potential barrier

Answer 273

Increases the majority carrier current

Answer 274

Semiconductor

Answer 275

Superconductor

Answer 276

None of these

Answer 277

Constant amplitude

Answer 278

Variable amplitude

Answer 279

Unit amplitude

Answer 280

Zero amplitude

Answer 281

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 282

Major current carriers are mobile negative ions

Answer 283

Major current carriers are electrons

Answer 284

Major current carriers are mobile holes

Answer 285

Number of holes increases while that of holes decreases

Answer 286

Number of electrons and holes increases equally

Answer 287

Number of electrons and holes remains same

Answer 288

Number of electrons increases while that of holes decreases

Answer 289

Semiconductor

Answer 290

None of these

Answer 291

Resistance of copper decreases while that of germanium increases

Answer 292

Resistance of both decreases

Answer 293

Resistance of both increases

Answer 294

Resistance of copper increases while that of germanium decreases

Answer 295

None of these

Answer 296

Detection of visible and invisible radiations

Answer 297

Automatic switching

Answer 298

Logic gates

Answer 299

Copper increases and germanium decreases

Answer 300

Each of them increases

Answer 301

Each of them decreases

Answer 302

Copper decreases and germanium increases

Answer 303

Reference voltage on the other

Answer 304

Virtual input

Answer 305

Non-inverting voltage at output

Answer 306

Is proportional to differential voltage gain

Answer 307

Aids the input signal

Answer 308

Is proportional to output current

Answer 309

Opposes the input signal

Answer 310

None of these

Answer 311

Forward biases

Answer 312

Reverse biased

Answer 313

Solvent is used

Answer 314

None of these

Answer 315

Resistor is used

Answer 316

Capacitor is used

Answer 317

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 318

From pure Si crystal

Answer 319

From pure Ge crystal

Answer 320

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 321

Diode is reverse biased

Answer 322

None of these

Answer 323

Diode is neutralized

Answer 324

Diode is forward biased

Answer 325

n-type conductor

Answer 326

n-type semiconductor

Answer 327

p-type semiconductor

Answer 328

p-type conductor

Answer 329

Remains constant

Answer 330

First A and B

Answer 331

Negative charge moves from emitter to base

Answer 332

Holes move from emitter to base

Answer 333

Holes move from base to collector

Answer 334

Negative charge moves from collector to base

Answer 335

Lowers the potential barrier

Answer 336

Increase the majority carrier current

Answer 337

Raises the potential barrier

Answer 338

Increase the minority carrier current

Answer 339

Major current carrier is electrons

Answer 340

Major carrier is mobile negative ions

Answer 341

The number of mobile holes exceeds the number of acceptors

Answer 342

Major carrier is mobile holes

Answer 343

None of these

Answer 344

Zero biased

Answer 345

Reversed biased

Answer 346

None of these

Answer 347

Forward biased

Answer 348

Major current carriers are mobile holes

Answer 349

Major current carriers are electrons

Answer 350

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 351

Major current carriers are mobile negative ions

Answer 352

None of these

Answer 353

Pentavalent

Answer 354

Tetravalent

Answer 355

It offers a very high inputs resistance to the input current

Answer 356

It offers a very low open loop gain all of above

Answer 357

It offers a very low output resistance

Answer 358

None of these

Answer 359

Semiconductor

Answer 360

P-type material

Answer 361

Switching device

Answer 362

Majority carriers

Answer 363

Minority carriers

Answer 364

Dual carriers

Answer 365

Nanosecond

Answer 366

Microsecond

Answer 367

Millisecond

Answer 368

None of these

Answer 369

All of above

Answer 370

An amplifier

Answer 371

Filtering circuit

Answer 372

A rectifier

Answer 373

Superconductor

Answer 374

Current gain

Answer 375

Input resistance

Answer 376

None of these

Answer 377

Voltage gain

Answer 378

Increase its life

Answer 379

Increase its electrical resistivity

Answer 380

Increases its electrical conductivity

Answer 381

Enable it to Telerate higher voltage

Answer 382

Temperature

Answer 383

Diode design

Answer 384

Forward bias

Answer 385

Doping density

Answer 386

High potential at N side and low potential at P side

Answer 387

P and N both are at same potential

Answer 388

High potential at P side and low potential at N side

Answer 389

Undetermined

Answer 390

Can be any of the above three

Answer 391

n-carriers only

Answer 392

n-carriers and p-carriers respectively

Answer 393

p-carriers only

Answer 394

p-carriers and n-carriers respectively

Answer 395

Superconductors

Answer 396

Conductors

Answer 397

Insulators

Answer 398

Semiconductors

Answer 399

Only half cycle is used

Answer 400

None of these

Answer 401

Current flows in pulses

Answer 402

Current flows in one directions

Answer 403

p-type conductor

Answer 404

n-type conductor

Answer 405

n-type semiconductor

Answer 406

p-type semiconductor

Answer 407

No bias voltages are required

Answer 408

Both junctions are forward biased

Answer 409

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 410

Both junctions are reverse biased

Answer 411

Decreases and then increases

Answer 412

Remains unchanged

Answer 413

Very small as compared to the thickness of emitter and collector

Answer 414

Thickness of emitter

Answer 415

Mean of thickness of emitter and collector

Answer 416

Thickness of collector

Answer 417

Decreased by reverse biasing

Answer 418

Increased by forward biasing

Answer 419

Increased by reverse biasing

Answer 420

Is independent of voltage

Answer 421

Holes move from emitter to base

Answer 422

Holes move from base to emitter

Answer 423

Holes move from emitter to base

Answer 424

Electrons move from base to collector

Answer 425

Insulators

Answer 426

Semiconductors

Answer 427

Superconductors

Answer 428

D.C. into A.C.

Answer 429

A.C. into D.C.

Answer 430

Low voltage to high voltage

Answer 431

High voltage to low voltage

Answer 432

Only if both inputs are 1

Answer 433

If both inputs are zero

Answer 434

If either input is zero

Answer 435

If either or both inputs are 1

Answer 436

In reverse bias

Answer 437

None of these

Answer 438

In forward bias

Answer 439

Conduction band is partially filled with electrons

Answer 440

Valence band is partially filled with electrons

Answer 441

Conduction band is filled with electrons and valence band is empty

Answer 442

Conduction band is empty and valence band is filled with electrons

Answer 443

Conduction band is partially filled with electrons

Answer 444

Valence band is partially filled with electrons

Answer 445

Conduction band is filled with electrons and valence bad is empty

Answer 446

Conduction band is empty and valence band is filled with electrons

Answer 447

Using a transistor

Answer 448

Suppressing half wave of A.C supply by using diode

Answer 449

Suppressing the harmonics in A.C voltage

Answer 450

Using a Coolidge tube

Answer 451

Off switch

Answer 452

Almost negligible

Answer 453

Light energy

Answer 454

None of these

Answer 455

Heat energy

Answer 456

Chemical energy

Answer 457

Semiconductor

Answer 458

Super conductor

Answer 459

P-type material

Answer 460

N-type material

Answer 461

Collector is positive and emitter is at negative potential as the base

Answer 462

Both collector and emitter are negative with respect to the base

Answer 463

Collector is positive and emitter is negative with respect to the base

Answer 464

Both collector and emitter are positive with respect to the base

Answer 465

Missing electrons

Answer 466

Extra electrons

Answer 467

It has high resistance to the current flow when reverse biased

Answer 468

It has low resistance to the current flow when forward biased

Answer 469

Its conductivity increases with rise of temperature

Answer 470

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 471

NAND gates

Answer 472

Missing of electrons

Answer 473

Extra electrons

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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