Physics Electronics Online Mcqs Test

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Question 1

1. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 2

2. The width of a depletion layer in a p-n junction is

Answer

Decreased by reverse biasing

Answer

Increased by reverse biasing

Answer

Is independent of voltage

Answer

Increased by forward biasing

Question 3

3. When n-type of semiconductor is heated,

Answer

Number of holes increases while that of holes decreases

Answer

Number of electrons and holes remains same

Answer

Number of electrons increases while that of holes decreases

Answer

Number of electrons and holes increases equally

Question 4

4. Zener breakdown in a semiconductor diode occurs when

Answer

Forward bias exceeds certain value

Answer

Potential barrier is reduced to zero

Answer

Reverse bias exceeds certain value

Answer

Forward current exceeds certain value

Question 5

5. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

p-type conductor

Answer

p-type semiconductor

Answer

n-type conductor

Question 6

6. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of both increases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of copper decreases while that of germanium increases

Answer

Resistance of both decreases

Question 7

7. A diode as a rectifier converts:

Answer

Low voltage to high voltage

Answer

D.C. into A.C.

Answer

A.C. into D.C.

Answer

High voltage to low voltage

Question 8

8. In a p-type semiconductor germanium is doped with:

Answer

All of above

Question 9

9. The forward resistance of the diode is

Answer

None of these

Question 10

10. Which one is forward bias?

Question 11

11. Reverse bias applied on a junction diode

Answer

Lowers the potential barrier

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Increases the majority carrier current

Question 12

12. A NAND gate has:

Answer

LOW inputs and a LOW output

Answer

HIGH inputs and a HIGH output

Answer

LOW inputs and a HIGH output

Answer

None of these

Question 13

13. A n-p-n transistor conducts when

Answer

Both collector and emitter are negative with respect to the base

Answer

Both collector and emitter are positive with respect to the base

Answer

Collector is positive and emitter is negative with respect to the base

Answer

Collector is positive and emitter is at negative potential as the base

Question 14

14. N-type crystal is

Answer

Negative charged

Answer

Positively charged

Answer

None of these

Question 15

15. What input values will cause an AND logic gate to produce a HIGH output?

Answer

All inputs are HIGH

Answer

At least one input is LOW

Answer

At least one input is HIGH

Answer

All inputs are LOW

Question 16

16. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 17

17. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 18

18. Application of photodiode is/are

Answer

None of these

Answer

Automatic switching

Answer

Logic gates

Answer

Detection of visible and invisible radiations

Question 19

19. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

None of these

Answer

Oscillator

Question 20

20. The least doped region in a transistor is

Answer

Either emitter or collector

Question 21

21. If on increasing temperature the resistance decreases, then it is

Answer

Superconductor

Answer

Semiconductor

Answer

None of these

Question 22

22. A p-n junction has a thickness of the order of:

Answer

10¯¹² cm

Answer

10¯⁶ cm

Question 23

23. In insulators

Answer

Conduction band is partially filled with electrons

Answer

Valence band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence band is empty

Answer

Conduction band is empty and valence band is filled with electrons

Question 24

24. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 25

25. Arsenic, antimony or phosphorus are impurities of

Answer

may be p-type or n-type

Answer

None of these

Question 26

26. LDR means:

Answer

Light dependent resistance

Answer

Low degree radiations

Answer

Low degree resistor

Answer

None of these

Question 27

27. The operation of a transistor requires

Answer

That the collector be heated

Answer

That the base be heated

Answer

That the emitter be heated

Answer

None of these

Question 28

28. Which one is reverse-biased?

Question 29

29. In a semiconductor, the mobility of holes is

Answer

Equal to electrons

Answer

Greater than electrons

Answer

Less than electrons

Question 30

30. Using OP-Amp as an inverting amplifier, the non-inverting terminal has potential

Answer

None of these

Question 31

31. The electrons in the outermost shell of an atom are called

Answer

None of these

Answer

Valence electrons

Answer

Free electrons

Answer

Tightly bound electrons

Question 32

32. Which logic gate is represented by following diagram?

Question 33

33. In reverse biasing of p-n junction, the resistance offered by the diode is of the order of

Answer

Several mega ohms

Question 34

34. The semiconductor diode can be used as a rectifier because _

Answer

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer

Its conductivity increases with rise of temperature

Answer

It has high resistance to the current flow when reverse biased

Answer

It has low resistance to the current flow when forward biased

Question 35

35. Transistors with various combinations are widely used as switches in:

Answer

Electric motors

Answer

Transformers

Answer

Electric generations

Question 36

36. In insulators

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Question 37

37. The ratio β represents

Question 38

38. n-type semiconductor if formed

Answer

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer

From pure Ge crystal

Answer

From pure Si crystal

Answer

When a Ge crystal is doped with an impurity containing 5 valence electrons

Question 39

39. The simplest type of rectification known as half wave rectification is obtained by

Answer

Suppressing half wave of A.C supply by using diode

Answer

Using a Coolidge tube

Answer

Suppressing the harmonics in A.C voltage

Answer

Using a transistor

Question 40

40. Conversion of low input a.c. into high output a.c. is called:

Answer

Magnification

Answer

All of these

Answer

Amplification

Answer

Rectification

Question 41

41. In semiconductors at a room temperature

Answer

The conduction band is completely empty

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled

Question 42

42. NAND gate is

Answer

A basic universal gate

Answer

Not a universal gate

Answer

A basic gate

Answer

A universal gate

Question 43

43. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Decreases slowly

Answer

Remain fixed

Answer

Increases slowly

Answer

Suddenly increases

Question 44

44. In a P-type semiconductor

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile negative ions

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile holes

Question 45

45. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Non-inverting voltage at output

Answer

Virtual input

Answer

Reference voltage on the other

Question 46

46. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 47

47. When the output of OR gate is 1

Answer

If either or both inputs are 1

Answer

Only if both inputs are 1

Answer

If either input is zero

Answer

If both inputs are zero

Question 48

48. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 49

49. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Electrons and protons

Answer

Protons and electrons

Answer

Holes and electrons

Answer

Electrons and holes

Question 50

50. In a n-p-n transistor:

Answer

Negative charge moves from collector to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Question 51

51. In forward bias the width of potential barrier

Answer

Remains same

Question 52

52. Barrier potential of a p-n junction diode does not depend on:

Answer

Forward bias

Answer

Temperature

Answer

Doping density

Answer

Diode design

Question 53

53. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 54

54. The materials in which valence band and conduction band overlap are called

Answer

Conductors

Answer

Insulators

Answer

Superconductors

Answer

Semiconductors

Question 55

55. When a p-n junction diode is reverse biased, the flow of current across the junction is mainly due to

Answer

Both drift and diffusion of charges

Answer

Drift of charges

Answer

Depends upon the nature of material

Answer

Diffusion of charges

Question 56

56. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Enable it to Telerate higher voltage

Answer

Increases its electrical conductivity

Answer

Increase its life

Answer

Increase its electrical resistivity

Question 57

57. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Equal to one

Answer

Less than one

Answer

Greater than one

Question 58

58. The ratio of tensile stress to tensile strain is called

Answer

Young’s modulus

Answer

Modulus of electricity

Answer

None of these

Answer

Bulk’s modulus

Question 59

59. In forward bias, the width of potential barrier in a p-n junction diode

Answer

First A and B

Answer

Remains constant

Question 60

60. Transistor can be used as

Answer

Full wave rectifier

Answer

Half wave rectifier

Question 61

61. The transistor provide good power amplification when they are used in

Answer

Common emitter configuration

Answer

Common collector configuration

Answer

None of these

Answer

Common base configuration

Question 62

62. The potential difference across the depletion region of silicon is

Question 63

63. Due to high loop gain of the amplifier, the inverting and non-inverting inputs are

Answer

Both are at the same potential

Answer

Non-inverting terminal is at high potential

Answer

Inverting terminal is at high potential

Answer

Both are at the high potential

Question 64

64. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical conductivity

Answer

Increase its electrical resistivity

Answer

Increase its life

Answer 181

Each of them decreases

Answer 182

Each of them increases

Answer 183

Copper increases and germanium decreases

Answer 184

Copper decreases and germanium increases

Answer 185

It offers a very high inputs resistance to the input current

Answer 186

None of these

Answer 187

It offers a very low output resistance

Answer 188

It offers a very low open loop gain all of above

Answer 189

Semiconductors

Answer 190

Superconductors

Answer 191

Insulators

Answer 192

Electric field is maximum

Answer 193

Potential is zero

Answer 194

Potential is maximum

Answer 195

Electric field is zero

Answer 196

NAND gates

Answer 197

None of these

Answer 198

Transverse Waves

Answer 199

Electromagnetic Waves

Answer 200

Gamma Rays

Answer 201

Holes move from emitter to base

Answer 202

Holes move from base to emitter

Answer 203

Electrons move from base to collector

Answer 204

Holes move from emitter be base

Answer 205

Under reverse bias

Answer 206

Under forward bias

Answer 207

During the manufacturing process

Answer 208

When temperature varies

Answer 209

None of these

Answer 210

Semiconductor

Answer 211

P-type material

Answer 212

Oscillator

Answer 213

No bias voltages are required

Answer 214

Both junctions are forward biased

Answer 215

Both junctions are reverse biased

Answer 216

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 217

Large number of holes and few electrons

Answer 218

Large number of free electrons and few holes

Answer 219

Large number of holes and electrons

Answer 220

Equal number of free electrons and holes

Answer 221

Potential is zero

Answer 222

Electric field is maximum

Answer 223

Electric field is zero

Answer 224

Potential is maximum

Answer 225

None of these

Answer 226

Hidden energy states

Answer 227

Band levels

Answer 228

Forbidden energy states

Answer 229

Diode is reverse biased

Answer 230

Diode is neutralized

Answer 231

None of these

Answer 232

Diode is forward biased

Answer 233

p-carriers and n-carriers respectively

Answer 234

p-carriers only

Answer 235

n-carriers and p-carriers respectively

Answer 236

n-carriers only

Answer 237

Decreases and then increases

Answer 238

Remains unchanged

Answer 239

Remains unchanged

Answer 240

Decreases and then increases

Answer 241

Major current carrier is electrons

Answer 242

Major carrier is mobile negative ions

Answer 243

The number of mobile holes exceeds the number of acceptors

Answer 244

Major carrier is mobile holes

Answer 245

Any of above

Answer 246

Can be any of the above three

Answer 247

N-type semiconductor

Answer 248

None of these

Answer 249

P-type semiconductor

Answer 250

N-type conductor

Answer 251

Electrons move from emitter to base

Answer 252

Electrons move from collector to base

Answer 253

Electrons move from base to emitter

Answer 254

Holes move from base to emitter

Answer 255

None of these

Answer 256

In reverse bias

Answer 257

In forward bias

Answer 258

Holes move from emitter to base

Answer 259

Holes move from base to collector

Answer 260

Negative charge moves from emitter to base

Answer 261

Negative charge moves from collector to base

Answer 262

Major current carriers are mobile holes

Answer 263

Major current carriers are mobile negative ions

Answer 264

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 265

Major current carriers are electrons

Answer 266

Extra electrons

Answer 267

Missing electrons

Answer 268

None of these

Answer 269

None of these

Answer 270

Capacitor is used

Answer 271

Resistor is used

Answer 272

Solvent is used

Answer 273

Logic gates

Answer 274

Oscillator

Answer 275

Increases the majority carrier current

Answer 276

Increase the minority carrier current

Answer 277

Raises the potential barrier

Answer 278

Lowers the potential barrier

Answer 279

None of these

Answer 280

Chemical energy

Answer 281

Heat energy

Answer 282

Light energy

Answer 283

None of these

Answer 284

Input resistance

Answer 285

Current gain

Answer 286

Voltage gain

Answer 287

None of these

Answer 288

Free electrons in n-type and holes in p-type

Answer 289

Holes in n-type and p-type

Answer 290

Free electrons in n-type and p-type

Answer 291

Holes in n-type and free electrons in p-type

Answer 292

None of these

Answer 293

Emission of light

Answer 294

Detection of light

Answer 295

Light display

Answer 296

Phosphorus

Answer 297

Glassy solids

Answer 298

Amorphous solids

Answer 299

Crystalline solids

Answer 300

Polymeric solids

Answer 301

Logic gates

Answer 302

Oscillator

Answer 303

Potential barrier in depletion layer remains unchanged

Answer 304

Diode is reverse biased

Answer 305

Diode is forward based

Answer 306

Potential barrier in depletion layer increases

Answer 307

None of these

Answer 308

Oscillator

Answer 309

Multivibrator

Answer 310

Comparator

Answer 311

INVERTER gate

Answer 312

Tensile stress

Answer 313

Compress ional stress

Answer 314

None of these

Answer 315

Shear stress

Answer 316

Current flows in pulses

Answer 317

Current flows in one directions

Answer 318

Only half cycle is used

Answer 319

None of these

Answer 320

Superconductors

Answer 321

Semiconductors

Answer 322

Insulators

Answer 323

None of these

Answer 324

Man hundred

Answer 325

Greater than emitter current

Answer 326

Equal to emitter current

Answer 327

Slightly less than emitter current

Answer 328

Any of above

Answer 329

Any of the above depending on nature of transistor

Answer 330

Depletion region

Answer 331

Diffusion region

Answer 332

Charged region

Answer 333

None of these

Answer 334

any of above

Answer 335

Pentavalent

Answer 336

Tetravalent

Answer 337

A rectifier

Answer 338

An amplifier

Answer 339

Filtering circuit

Answer 340

Semiconductor

Answer 341

Both A.C. & D.C.

Answer 342

None of these

Answer 343

All of these

Answer 344

None of these

Answer 345

Young’s modulus

Answer 346

Shear modulus

Answer 347

Bulk modulus

Answer 348

None of these

Answer 349

Mean of thickness of emitter and collector

Answer 350

Thickness of emitter

Answer 351

Thickness of collector

Answer 352

Very small as compared to the thickness of emitter and collector

Answer 353

None of these

Answer 354

Works efficiently

Answer 355

Require more current

Answer 356

Crystal lattice

Answer 357

All of these

Answer 358

Low voltage to high voltage

Answer 359

D.C. into A.C.

Answer 360

High voltage to low voltage

Answer 361

A.C. into D.C.

Answer 362

Copper decreases and germanium increases

Answer 363

Copper increases and germanium decreases

Answer 364

Each of them decreases

Answer 365

Each of them increases

Answer 366

Opposes the input signal

Answer 367

Aids the input signal

Answer 368

Is proportional to differential voltage gain

Answer 369

Is proportional to output current

Answer 370

91 x 10 Nm¯²

Answer 371

110 Nm¯²

Answer 372

None of these

Answer 373

70 x 10 Nm¯²

Answer 374

Step down transformer

Answer 375

Step up transformer

Answer 376

Three diodes in common

Answer 377

Triode vacuum tube

Answer 378

Increased by reverse biasing

Answer 379

Decreased by reverse biasing

Answer 380

Is independent of voltage

Answer 381

Increased by forward biasing

Answer 382

N-type material

Answer 383

Semiconductor

Answer 384

Super conductor

Answer 385

P-type material

Answer 386

Phosphorus

Answer 387

p-type conductor

Answer 388

n-type conductor

Answer 389

n-type semiconductor

Answer 390

p-type semiconductor

Answer 391

120° Phase shift

Answer 392

90° Phase shift

Answer 393

No Phase shift

Answer 394

180° Phase shift

Answer 395

Is locate on the collector

Answer 396

Point from north to south

Answer 397

Is located on the emitter

Answer 398

Is located on the base

Answer 399

Mobile ions

Answer 400

Immobile ions

Answer 401

None of these

Answer 402

Electrons move from base to collector

Answer 403

Holes move from base to emitter

Answer 404

Holes move from emitter to base

Answer 405

Holes move from emitter to base

Answer 406

The conduction band is completely empty

Answer 407

The valence band is completely filled and the conduction band is partially filled

Answer 408

The valence band is partially empty and the conduction band is partially filled

Answer 409

The valence band is completely filled

Answer 410

Undetermined

Answer 411

High potential at P side and low potential at N side

Answer 412

P and N both are at same potential

Answer 413

High potential at N side and low potential at P side

Answer 414

Equal number of free electrons and holes

Answer 415

Large number of free electrons and few holes

Answer 416

Large number of holes and electrons

Answer 417

Large number of holes and few electrons

Answer 418

Reverse biased

Answer 419

Forward biases

Answer 420

None of these

Answer 421

Unit amplitude

Answer 422

Variable amplitude

Answer 423

Zero amplitude

Answer 424

Constant amplitude

Answer 425

None of these

Answer 426

A very high input impedance

Answer 427

A very low input impedance

Answer 428

A low output impedance

Answer 429

AND gates, OR gates, and NOT gates

Answer 430

OR gates only

Answer 431

Or gates and NOT gates

Answer 432

AND gates and NOT gates

Answer 433

May be in phase or not

Answer 434

Input and out signals are in phase

Answer 435

Input and out signals are not in phase

Answer 436

None of these

Answer 437

Extra electrons

Answer 438

Missing of electrons

Answer 439

Phosphorus

Answer 440

Phosphorus

Answer 441

Switching device

Answer 442

P-type material

Answer 443

Minority carriers

Answer 444

Dual carriers

Answer 445

Majority carriers

Answer 446

Increase the majority carrier current

Answer 447

Lowers the potential barrier

Answer 448

Increase the minority carrier current

Answer 449

Raises the potential barrier

Answer 450

Two PN-junctions

Answer 451

Three PN-junctions

Answer 452

One PN-junction

Answer 453

Four PN-junctions

Answer 454

Almost zero

Answer 455

None of these

Answer 456

Can be any of the above three

Answer 457

None of these

Answer 458

Millisecond

Answer 459

Microsecond

Answer 460

Nanosecond

Answer 461

Off switch

Answer 462

Zero biased

Answer 463

Reversed biased

Answer 464

Forward biased

Answer 465

None of these

Answer 466

The photo diodes

Answer 467

Solar cells

Answer 468

The light emitting diode

Answer 469

The switch

Answer 470

n-type conductor

Answer 471

p-type semiconductor

Answer 472

p-type conductor

Answer 473

n-type semiconductor

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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