Physics Electronics Online Mcqs Test

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Question 1

1. Which is normal used of transistor?

Answer

Switching device

Answer

P-type material

Question 2

2. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

p-type semiconductor

Answer

p-type conductor

Answer

n-type conductor

Question 3

3. The least doped region in a transistor is

Answer

Either emitter or collector

Question 4

4. Photodiode is used for

Answer

Light display

Answer

Emission of light

Answer

None of these

Answer

Detection of light

Question 5

5. In a semiconductor, the mobility of holes is

Answer

Equal to electrons

Answer

Less than electrons

Answer

Greater than electrons

Question 6

6. The units of modulus of elasticity are same as that of

Answer

None of these

Question 7

7. A diode as a rectifier converts:

Answer

A.C. into D.C.

Answer

High voltage to low voltage

Answer

D.C. into A.C.

Answer

Low voltage to high voltage

Question 8

8. The critical temperature for mercury is

Question 9

9. Which of the following is not characteristic of an op—amp

Answer

It offers a very low output resistance

Answer

None of these

Answer

It offers a very high inputs resistance to the input current

Answer

It offers a very low open loop gain all of above

Question 10

10. When we apply reverse bias to a junction diode, it

Answer

Raises the potential barrier

Answer

Lowers the potential barrier

Answer

Increase the minority carrier current

Answer

Increase the majority carrier current

Question 11

11. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Reversed biased

Answer

Zero biased

Answer

None of these

Answer

Forward biased

Question 12

12. A pieced of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Each of them decreases

Answer

Copper increases and germanium decreases

Answer

Each of them increases

Answer

Copper decreases and germanium increases

Question 13

13. The basic logic gate whose output is the complement of the input is the:

Answer

INVERTER gate

Answer

Comparator

Question 14

14. Application of photodiode is/are

Answer

Logic gates

Answer

None of these

Answer

Detection of visible and invisible radiations

Answer

Automatic switching

Question 15

15. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 16

16. The ratio β represents

Question 17

17. Semi-conductor germanium and silicon are

Answer

Pentavalent

Answer

Tetravalent

Question 18

18. Non-inverting amplifier circuits have

Answer

A very high input impedance

Answer

A very low input impedance

Answer

None of these

Answer

A low output impedance

Question 19

19. When a pentavalent material like As, is added to tetravalent material l.e. Ge, we get a

Answer

Super conductor

Answer

Semiconductor

Answer

P-type material

Answer

N-type material

Question 20

20. The width of a depletion layer in a p-n junction is

Answer

Increased by forward biasing

Answer

Increased by reverse biasing

Answer

Is independent of voltage

Answer

Decreased by reverse biasing

Question 21

21. The number of junctions in the PNP transistor are

Question 22

22. A p-n junction has a thickness of the order of:

Answer

10¯¹² cm

Answer

10¯⁶ cm

Question 23

23. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Non-inverting voltage at output

Answer

Virtual input

Answer

Reference voltage on the other

Question 24

24. When arsenic is added as an impurity to silicon, the resulting material is

Answer

P-type semiconductor

Answer

N-type conductor

Answer

None of these

Answer

N-type semiconductor

Question 25

25. Electrons present in p-type material due to thermal pair generation are

Answer

Minority carriers

Answer

Majority carriers

Answer

Dual carriers

Question 26

26. When n-p-n transistor is used as an amplifier

Answer

Holes move from emitter to base

Answer

Electrons move from base to collector

Answer

Holes move from base to emitter

Answer

Holes move from emitter be base

Question 27

27. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 28

28. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

Band levels

Answer

Hidden energy states

Answer

None of these

Answer

Forbidden energy states

Question 29

29. In n-type substances, the minority carriers are

Answer

None of these

Question 30

30. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 31

31. The energy band gap is maximum in

Answer

Insulators

Answer

Superconductors

Answer

Semiconductors

Question 32

32. n-type semiconductor if formed

Answer

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer

From pure Si crystal

Answer

From pure Ge crystal

Question 33

33. When NPN transistor is used as an amplifier

Answer

Electrons move from emitter to base

Answer

Holes move from base to emitter

Answer

Electrons move from collector to base

Answer

Electrons move from base to emitter

Question 34

34. The ratio of tensile stress to tensile strain is called

Answer

Young’s modulus

Answer

None of these

Answer

Bulk’s modulus

Answer

Modulus of electricity

Question 35

35. Transistors with various combinations are widely used as switches in:

Answer

Electric generations

Answer

Transformers

Answer

Electric motors

Question 36

36. In junction diode, the holes are because of:

Answer

Extra electrons

Answer

Missing electrons

Question 37

37. When n-type of semiconductor is heated,

Answer

Number of electrons increases while that of holes decreases

Answer

Number of electrons and holes increases equally

Answer

Number of holes increases while that of holes decreases

Answer

Number of electrons and holes remains same

Question 38

38. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 39

39. In p-n-p transistor the collector current is

Answer

Any of above

Answer

Slightly less than emitter current

Answer

Greater than emitter current

Answer

Equal to emitter current

Question 40

40. The potential difference across the depletion region of silicon is

Question 41

41. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increase its life

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical resistivity

Answer

Increases its electrical conductivity

Question 42

42. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is zero

Answer

Electric field is maximum

Answer

Potential is zero

Answer

Potential is maximum

Question 43

43. When aluminum is added as an impurity to silicon, then resulting material is

Answer

p-type semiconductor

Answer

p-type conductor

Answer

n-type conductor

Answer

n-type semiconductor

Question 44

44. To use a transistor as an amplifier

Answer

Both junctions are reverse biased

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

No bias voltages are required

Answer

Both junctions are forward biased

Question 45

45. Diode can work as

Answer

Oscillator

Answer

Multivibrator

Question 46

46. Due to the break down the p-n junction suffers

Answer

Require more current

Answer

Works efficiently

Answer

None of these

Question 47

47. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Increase its electrical conductivity

Answer

Increase its life

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical resistivity

Question 48

48. In Germanium crystal, impurity donor elements have valiancy

Question 49

49. Which logic gate is represented by following diagram?

Question 50

50. In a n-p-n transistor:

Answer

Negative charge moves from collector to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from emitter to base

Answer

Holes move from base to collector

Question 51

51. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Potential barrier in depletion layer increases

Answer

Potential barrier in depletion layer remains unchanged

Answer

Diode is forward based

Answer

Diode is reverse biased

Question 52

52. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Decreases slowly

Answer

Remain fixed

Answer

Suddenly increases

Answer

Increases slowly

Question 53

53. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 54

54. Which one is forward bias?

Question 55

55. When a semiconductor is continuously heated, then value of its resistance

Answer

Remains unchanged

Answer

Decreases and then increases

Question 56

56. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Electrons and protons

Answer

Holes and electrons

Answer

Electrons and holes

Answer

Protons and electrons

Question 57

57. The output will be a LOW for any case when one or more inputs are zero in a(n):

Question 58

58. The working of transistor as amplifier is similar to

Answer

Three diodes in common

Answer

Triode vacuum tube

Answer

Step up transformer

Answer

Step down transformer

Question 59

59. The gain A of the amplifier is of the order of

Answer

None of these

Answer

Man hundred

Question 60

60. In junction diode, the holes are because of:

Answer

Extra electrons

Answer

Missing electrons

Question 61

61. The thickness of the base is equal to

Answer

Thickness of collector

Answer

Thickness of emitter

Answer

Very small as compared to the thickness of emitter and collector

Answer

Mean of thickness of emitter and collector

Question 62

62. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

AND gates, OR gates, and NOT gates

Answer

AND gates and NOT gates

Answer

Or gates and NOT gates

Answer

OR gates only

Question 63

63. In a PN junction

Answer

Undetermined

Answer

High potential at P side and low potential at N side

Answer

P and N both are at same potential

Answer

High potential at N side and low potential at P side

Question 64

64. The least doped region in a transistor is

Answer 173

Major current carriers are mobile holes

Answer 174

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 175

Major current carriers are electrons

Answer 176

Major current carriers are mobile negative ions

Answer 177

During the manufacturing process

Answer 178

Under reverse bias

Answer 179

Under forward bias

Answer 180

When temperature varies

Answer 181

Large number of free electrons and few holes

Answer 182

Large number of holes and few electrons

Answer 183

Large number of holes and electrons

Answer 184

Equal number of free electrons and holes

Answer 185

Superconductor

Answer 186

Transistor

Answer 187

Decreases and then increases

Answer 188

Remains unchanged

Answer 189

None of these

Answer 190

Forward biases

Answer 191

Reverse biased

Answer 192

P-type material

Answer 193

Oscillator

Answer 194

None of these

Answer 195

may be p-type or n-type

Answer 196

Bulk modulus

Answer 197

Shear modulus

Answer 198

None of these

Answer 199

Young’s modulus

Answer 200

Holes move from emitter to base

Answer 201

Holes move from base to emitter

Answer 202

Electrons move from base to collector

Answer 203

Holes move from emitter to base

Answer 204

Extra electrons

Answer 205

Missing of electrons

Answer 206

Equal to one

Answer 207

Greater than one

Answer 208

Less than one

Answer 209

Forward current exceeds certain value

Answer 210

Reverse bias exceeds certain value

Answer 211

Forward bias exceeds certain value

Answer 212

Potential barrier is reduced to zero

Answer 213

Filtering circuit

Answer 214

A rectifier

Answer 215

An amplifier

Answer 216

Amplification

Answer 217

All of these

Answer 218

Magnification

Answer 219

Rectification

Answer 220

Mobile ions

Answer 221

Immobile ions

Answer 222

Variable amplitude

Answer 223

Constant amplitude

Answer 224

Zero amplitude

Answer 225

Unit amplitude

Answer 226

None of these

Answer 227

Tensile stress

Answer 228

Compress ional stress

Answer 229

Shear stress

Answer 230

Conduction band is partially filled with electrons

Answer 231

Conduction band is empty and valence band is filled with electrons

Answer 232

Valence band is partially filled with electrons

Answer 233

Conduction band is filled with electrons and valence bad is empty

Answer 234

The valence band is completely filled

Answer 235

The valence band is completely filled and the conduction band is partially filled

Answer 236

The conduction band is completely empty

Answer 237

The valence band is partially empty and the conduction band is partially filled

Answer 238

Remains same

Answer 239

Electromagnetic Waves

Answer 240

Gamma Rays

Answer 241

Transverse Waves

Answer 242

Current flows in one directions

Answer 243

Only half cycle is used

Answer 244

None of these

Answer 245

Current flows in pulses

Answer 246

Common collector configuration

Answer 247

Common base configuration

Answer 248

None of these

Answer 249

Common emitter configuration

Answer 250

All of these

Answer 251

Crystal lattice

Answer 252

None of these

Answer 253

May be in phase or not

Answer 254

Input and out signals are not in phase

Answer 255

Input and out signals are in phase

Answer 256

Phosphorus

Answer 257

The conduction band is completely empty

Answer 258

The valence band is completely filled and the conduction band is partially filled

Answer 259

The valence band is completely filled

Answer 260

The valence band is partially empty and the conduction band is partially filled

Answer 261

Capacitor is used

Answer 262

None of these

Answer 263

Solvent is used

Answer 264

Resistor is used

Answer 265

Both collector and emitter are positive with respect to the base

Answer 266

Collector is positive and emitter is at negative potential as the base

Answer 267

Both collector and emitter are negative with respect to the base

Answer 268

Collector is positive and emitter is negative with respect to the base

Answer 269

At least one input is HIGH

Answer 270

All inputs are LOW

Answer 271

All inputs are HIGH

Answer 272

At least one input is LOW

Answer 273

Two PN-junctions

Answer 274

Four PN-junctions

Answer 275

One PN-junction

Answer 276

Three PN-junctions

Answer 277

Several mega ohms

Answer 278

Superconductors

Answer 279

Insulators

Answer 280

Semiconductors

Answer 281

Oscillator

Answer 282

Phosphorus

Answer 283

Almost negligible

Answer 284

Crystalline solids

Answer 285

Amorphous solids

Answer 286

Glassy solids

Answer 287

Polymeric solids

Answer 288

Major carrier is mobile negative ions

Answer 289

Major current carrier is electrons

Answer 290

The number of mobile holes exceeds the number of acceptors

Answer 291

Major carrier is mobile holes

Answer 292

Valence electrons

Answer 293

Free electrons

Answer 294

None of these

Answer 295

Tightly bound electrons

Answer 296

None of these

Answer 297

LOW inputs and a LOW output

Answer 298

HIGH inputs and a HIGH output

Answer 299

LOW inputs and a HIGH output

Answer 300

Solar cells

Answer 301

The light emitting diode

Answer 302

The photo diodes

Answer 303

The switch

Answer 304

Suppressing half wave of A.C supply by using diode

Answer 305

Using a Coolidge tube

Answer 306

Using a transistor

Answer 307

Suppressing the harmonics in A.C voltage

Answer 308

p-type conductor

Answer 309

n-type semiconductor

Answer 310

p-type semiconductor

Answer 311

n-type conductor

Answer 312

None of these

Answer 313

Free electrons in n-type and p-type

Answer 314

Free electrons in n-type and holes in p-type

Answer 315

Holes in n-type and free electrons in p-type

Answer 316

Holes in n-type and p-type

Answer 317

Electric field is maximum

Answer 318

Potential is maximum

Answer 319

Potential is zero

Answer 320

Electric field is zero

Answer 321

Large number of holes and few electrons

Answer 322

Equal number of free electrons and holes

Answer 323

Large number of holes and electrons

Answer 324

Large number of free electrons and few holes

Answer 325

Logic gates

Answer 326

Oscillator

Answer 327

Lowers the potential barrier

Answer 328

Increase the minority carrier current

Answer 329

Raises the potential barrier

Answer 330

Increases the majority carrier current

Answer 331

None of these

Answer 332

Both A.C. & D.C.

Answer 333

Temperature

Answer 334

Forward bias

Answer 335

Doping density

Answer 336

Diode design

Answer 337

Any of the above depending on nature of transistor

Answer 338

Off switch

Answer 339

Is located on the emitter

Answer 340

Is locate on the collector

Answer 341

Point from north to south

Answer 342

Is located on the base

Answer 343

Conduction band is empty and valence band is filled with electrons

Answer 344

Conduction band is filled with electrons and valence band is empty

Answer 345

Valence band is partially filled with electrons

Answer 346

Conduction band is partially filled with electrons

Answer 347

That the emitter be heated

Answer 348

That the base be heated

Answer 349

None of these

Answer 350

That the collector be heated

Answer 351

A basic gate

Answer 352

Not a universal gate

Answer 353

A universal gate

Answer 354

A basic universal gate

Answer 355

First A and B

Answer 356

Remains constant

Answer 357

Oscillator

Answer 358

None of these

Answer 359

Voltage gain

Answer 360

Input resistance

Answer 361

None of these

Answer 362

Current gain

Answer 363

None of these

Answer 364

Holes move from emitter to base

Answer 365

Negative charge moves from collector to base

Answer 366

Holes move from base to collector

Answer 367

Negative charge moves from emitter to base

Answer 368

Semiconductor

Answer 369

None of these

Answer 370

n-carriers and p-carriers respectively

Answer 371

n-carriers only

Answer 372

p-carriers and n-carriers respectively

Answer 373

p-carriers only

Answer 374

None of these

Answer 375

Both are at the high potential

Answer 376

Both are at the same potential

Answer 377

Inverting terminal is at high potential

Answer 378

Non-inverting terminal is at high potential

Answer 379

Heat energy

Answer 380

Light energy

Answer 381

Chemical energy

Answer 382

None of these

Answer 383

Major current carriers are mobile negative ions

Answer 384

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 385

Major current carriers are electrons

Answer 386

Major current carriers are mobile holes

Answer 387

Can be any of the above three

Answer 388

All of these

Answer 389

Resistance of copper decreases while that of germanium increases

Answer 390

Resistance of copper increases while that of germanium decreases

Answer 391

Resistance of both decreases

Answer 392

Resistance of both increases

Answer 393

91 x 10 Nm¯²

Answer 394

None of these

Answer 395

70 x 10 Nm¯²

Answer 396

110 Nm¯²

Answer 397

Each of them decreases

Answer 398

Copper decreases and germanium increases

Answer 399

Each of them increases

Answer 400

Copper increases and germanium decreases

Answer 401

None of these

Answer 402

Semiconductor

Answer 403

Superconductor

Answer 404

Logic gates

Answer 405

Oscillator

Answer 406

Any of above

Answer 407

None of these

Answer 408

Increased by forward biasing

Answer 409

Is independent of voltage

Answer 410

Increased by reverse biasing

Answer 411

Decreased by reverse biasing

Answer 412

None of these

Answer 413

Low degree resistor

Answer 414

Low degree radiations

Answer 415

Light dependent resistance

Answer 416

Negative charged

Answer 417

Positively charged

Answer 418

None of these

Answer 419

Millisecond

Answer 420

Microsecond

Answer 421

Nanosecond

Answer 422

None of these

Answer 423

None of these

Answer 424

Depletion region

Answer 425

Diffusion region

Answer 426

Charged region

Answer 427

any of above

Answer 428

Full wave rectifier

Answer 429

Half wave rectifier

Answer 430

It has low resistance to the current flow when forward biased

Answer 431

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 432

It has high resistance to the current flow when reverse biased

Answer 433

Its conductivity increases with rise of temperature

Answer 434

Diode is reverse biased

Answer 435

Diode is forward biased

Answer 436

Diode is neutralized

Answer 437

None of these

Answer 438

Opposes the input signal

Answer 439

Is proportional to output current

Answer 440

Aids the input signal

Answer 441

Is proportional to differential voltage gain

Answer 442

All of above

Answer 443

None of these

Answer 444

Only if both inputs are 1

Answer 445

If either or both inputs are 1

Answer 446

If either input is zero

Answer 447

If both inputs are zero

Answer 448

Low voltage to high voltage

Answer 449

High voltage to low voltage

Answer 450

D.C. into A.C.

Answer 451

A.C. into D.C.

Answer 452

Increase the minority carrier current

Answer 453

Increases the majority carrier current

Answer 454

Raises the potential barrier

Answer 455

Lowers the potential barrier

Answer 456

None of these

Answer 457

In reverse bias

Answer 458

In forward bias

Answer 459

None of these

Answer 460

Insulators

Answer 461

Conductors

Answer 462

Semiconductors

Answer 463

Superconductors

Answer 464

No Phase shift

Answer 465

90° Phase shift

Answer 466

180° Phase shift

Answer 467

120° Phase shift

Answer 468

Both drift and diffusion of charges

Answer 469

Depends upon the nature of material

Answer 470

Diffusion of charges

Answer 471

Drift of charges

Answer 472

Almost zero

Answer 473

None of these

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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