Physics Electronics Online Mcqs Test

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Question 1

1. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increases its electrical conductivity

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical resistivity

Answer

Increase its life

Question 2

2. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 3

3. The number of junctions in the PNP transistor are

Question 4

4. The semiconductor diode can be used as a rectifier because _

Answer

Its conductivity increases with rise of temperature

Answer

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer

It has low resistance to the current flow when forward biased

Answer

It has high resistance to the current flow when reverse biased

Question 5

5. In the transistor schematic symbol, the arrow

Answer

Is locate on the collector

Answer

Point from north to south

Answer

Is located on the base

Answer

Is located on the emitter

Question 6

6. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 7

7. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of both decreases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of both increases

Answer

Resistance of copper decreases while that of germanium increases

Question 8

8. The ratio β shows the

Answer

None of these

Answer

Voltage gain

Answer

Input resistance

Answer

Current gain

Question 9

9. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 10

10. In reverse biasing of p-n junction, the resistance offered by the diode is of the order of

Answer

Several mega ohms

Question 11

11. Electrons present in p-type material due to thermal pair generation are

Answer

Minority carriers

Answer

Majority carriers

Answer

Dual carriers

Question 12

12. When arsenic is added as an impurity to silicon, the resulting material is

Answer

N-type semiconductor

Answer

None of these

Answer

N-type conductor

Answer

P-type semiconductor

Question 13

13. Transistor can be used as

Answer

Full wave rectifier

Answer

Half wave rectifier

Question 14

14. Due to the break down the p-n junction suffers

Answer

Require more current

Answer

Works efficiently

Answer

None of these

Question 15

15. The electrical circuit used to bet smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 16

16. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 17

17. An OP-AMPs can amplify

Answer

Both A.C. & D.C.

Answer

None of these

Question 18

18. In junction diode, the holes are because of:

Answer

Extra electrons

Answer

Missing electrons

Question 19

19. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

p-type conductor

Answer

p-type semiconductor

Answer

n-type conductor

Question 20

20. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Potential is zero

Answer

Electric field is zero

Answer

Potential is maximum

Answer

Electric field is maximum

Question 21

21. The p-n junction diode works as insulator, if connected

Answer

In reverse bias

Answer

None of these

Answer

In forward bias

Question 22

22. In insulators

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence band is empty

Question 23

23. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 24

24. A diode as a rectifier converts:

Answer

A.C. into D.C.

Answer

D.C. into A.C.

Answer

Low voltage to high voltage

Answer

High voltage to low voltage

Question 25

25. Arsenic, antimony or phosphorus are impurities of

Answer

may be p-type or n-type

Answer

None of these

Question 26

26. When n-type of semiconductor is heated,

Answer

Number of holes increases while that of holes decreases

Answer

Number of electrons and holes increases equally

Answer

Number of electrons and holes remains same

Answer

Number of electrons increases while that of holes decreases

Question 27

27. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 28

28. Identify the correct statement about minority carriers

Answer

Holes in n-type and p-type

Answer

Holes in n-type and free electrons in p-type

Answer

Free electrons in n-type and p-type

Answer

Free electrons in n-type and holes in p-type

Question 29

29. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Each of them decreases

Answer

Copper increases and germanium decreases

Answer

Each of them increases

Answer

Copper decreases and germanium increases

Question 30

30. Acceptor and donor impurities donate

Answer

n-carriers only

Answer

p-carriers and n-carriers respectively

Answer

p-carriers only

Answer

n-carriers and p-carriers respectively

Question 31

31. At absolute zero, Si acts as

Answer

None of these

Question 32

32. To use a transistor as an amplifier

Answer

No bias voltages are required

Answer

Both junctions are forward biased

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

Both junctions are reverse biased

Question 33

33. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type conductor

Answer

p-type semiconductor

Answer

n-type semiconductor

Answer

p-type conductor

Question 34

34. Which one is reverse-biased?

Question 35

35. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 36

36. The working of transistor as amplifier is similar to

Answer

Three diodes in common

Answer

Triode vacuum tube

Answer

Step up transformer

Answer

Step down transformer

Question 37

37. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 38

38. The materials in which valence band and conduction band overlap are called

Answer

Insulators

Answer

Superconductors

Answer

Conductors

Answer

Semiconductors

Question 39

39. In a n-p-n transistor:

Answer

Holes move from base to collector

Answer

Negative charge moves from collector to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from emitter to base

Question 40

40. When a p-n junction diode is reverse biased, the flow of current across the junction is mainly due to

Answer

Diffusion of charges

Answer

Drift of charges

Answer

Depends upon the nature of material

Answer

Both drift and diffusion of charges

Question 41

41. Depletion layer consists of

Answer

Immobile ions

Answer

Mobile ions

Question 42

42. In a good conductor, the energy gap between the conduction band and the valence band is

Question 43

43. In a p-type semiconductor germanium is doped with:

Answer

All of above

Question 44

44. Which of the following is not characteristic of an op—amp

Answer

It offers a very low output resistance

Answer

It offers a very high inputs resistance to the input current

Answer

None of these

Answer

It offers a very low open loop gain all of above

Question 45

45. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 46

46. A p-n junction has a thickness of the order of:

Answer

10¯⁶ cm

Answer

10¯¹² cm

Question 47

47. Polythene, potystrene and nylon are examples of

Answer

Crystalline solids

Answer

Polymeric solids

Answer

Glassy solids

Answer

Amorphous solids

Question 48

48. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 49

49. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Greater than one

Answer

Less than one

Answer

Equal to one

Question 50

50. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Increase its life

Answer

Increase its electrical resistivity

Answer

Increase its electrical conductivity

Answer

Enable it to Telerate higher voltage

Question 51

51. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 52

52. Which logic gate is represented by following diagram?

Question 53

53. If a signal passing through a gate is inhibited by sending a low into one of the inputs, and the output is HIGH, the gate is a(n):

Question 54

54. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 55

55. Due to high loop gain of the amplifier, the inverting and non-inverting inputs are

Answer

Both are at the same potential

Answer

Non-inverting terminal is at high potential

Answer

Inverting terminal is at high potential

Answer

Both are at the high potential

Question 56

56. In a p-type semiconductor germanium is doped with:

Answer

All of these

Question 57

57. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 58

58. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Zero biased

Answer

None of these

Answer

Forward biased

Answer

Reversed biased

Question 59

59. With negative feedback, the returning signal:

Answer

Opposes the input signal

Answer

Is proportional to differential voltage gain

Answer

Is proportional to output current

Answer

Aids the input signal

Question 60

60. In forward bias the width of potential barrier

Answer

Remains same

Question 61

61. In semiconductors at a room temperature

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Answer

The valence band is completely filled and the conduction band is partially filled

Question 62

62. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 63

63. In p-n-p transistor the collector current is

Answer

Slightly less than emitter current

Answer

Greater than emitter current

Answer

Any of above

Answer

Equal to emitter current

Question 64

64. In p-type semiconductor

Answer

Major carrier is mobile negative ions

Answer

Major current carrier is electrons

Answer

Major carrier is mobile holes

Answer

The number of mobile holes exceeds the number of acceptors

Answer 158

Almost zero

Answer 159

None of these

Answer 160

Major current carriers are electrons

Answer 161

Major current carriers are mobile negative ions

Answer 162

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 163

Major current carriers are mobile holes

Answer 164

None of these

Answer 165

Oscillator

Answer 166

Electrons move from emitter to base

Answer 167

Electrons move from base to emitter

Answer 168

Electrons move from collector to base

Answer 169

Holes move from base to emitter

Answer 170

Extra electrons

Answer 171

Missing of electrons

Answer 172

Not a universal gate

Answer 173

A universal gate

Answer 174

A basic universal gate

Answer 175

A basic gate

Answer 176

Equal number of free electrons and holes

Answer 177

Large number of holes and electrons

Answer 178

Large number of free electrons and few holes

Answer 179

Large number of holes and few electrons

Answer 180

Input and out signals are not in phase

Answer 181

None of these

Answer 182

May be in phase or not

Answer 183

Input and out signals are in phase

Answer 184

P-type material

Answer 185

Oscillator

Answer 186

Remains constant

Answer 187

First A and B

Answer 188

None of these

Answer 189

None of these

Answer 190

Band levels

Answer 191

Hidden energy states

Answer 192

Forbidden energy states

Answer 193

Logic gates

Answer 194

Detection of visible and invisible radiations

Answer 195

Automatic switching

Answer 196

None of these

Answer 197

Man hundred

Answer 198

None of these

Answer 199

Logic gates

Answer 200

Oscillator

Answer 201

Microsecond

Answer 202

Nanosecond

Answer 203

Millisecond

Answer 204

None of these

Answer 205

Under reverse bias

Answer 206

When temperature varies

Answer 207

Under forward bias

Answer 208

During the manufacturing process

Answer 209

The valence band is partially empty and the conduction band is partially filled

Answer 210

The valence band is completely filled and the conduction band is partially filled

Answer 211

The valence band is completely filled

Answer 212

The conduction band is completely empty

Answer 213

Only half cycle is used

Answer 214

Current flows in pulses

Answer 215

None of these

Answer 216

Current flows in one directions

Answer 217

Crystal lattice

Answer 218

All of these

Answer 219

Negative charge moves from collector to base

Answer 220

Holes move from emitter to base

Answer 221

Holes move from base to collector

Answer 222

Negative charge moves from emitter to base

Answer 223

None of these

Answer 224

Common base configuration

Answer 225

Common collector configuration

Answer 226

Common emitter configuration

Answer 227

Forward biases

Answer 228

Reverse biased

Answer 229

None of these

Answer 230

Diffusion region

Answer 231

Charged region

Answer 232

Depletion region

Answer 233

None of these

Answer 234

Temperature

Answer 235

Forward bias

Answer 236

Diode design

Answer 237

Doping density

Answer 238

Magnification

Answer 239

All of these

Answer 240

Amplification

Answer 241

Rectification

Answer 242

Filtering circuit

Answer 243

A rectifier

Answer 244

An amplifier

Answer 245

Increased by reverse biasing

Answer 246

Decreased by reverse biasing

Answer 247

Increased by forward biasing

Answer 248

Is independent of voltage

Answer 249

90° Phase shift

Answer 250

180° Phase shift

Answer 251

No Phase shift

Answer 252

120° Phase shift

Answer 253

Protons and electrons

Answer 254

Electrons and protons

Answer 255

Electrons and holes

Answer 256

Holes and electrons

Answer 257

Equal to electrons

Answer 258

Less than electrons

Answer 259

Greater than electrons

Answer 260

Any of above

Answer 261

Increase the majority carrier current

Answer 262

Lowers the potential barrier

Answer 263

Raises the potential barrier

Answer 264

Increase the minority carrier current

Answer 265

Potential barrier in depletion layer remains unchanged

Answer 266

Diode is forward based

Answer 267

Potential barrier in depletion layer increases

Answer 268

Diode is reverse biased

Answer 269

None of these

Answer 270

Any of the above depending on nature of transistor

Answer 271

n-type semiconductor

Answer 272

p-type conductor

Answer 273

n-type conductor

Answer 274

p-type semiconductor

Answer 275

Resistor is used

Answer 276

None of these

Answer 277

Capacitor is used

Answer 278

Solvent is used

Answer 279

Decreases slowly

Answer 280

Remain fixed

Answer 281

Increases slowly

Answer 282

Suddenly increases

Answer 283

A.C. into D.C.

Answer 284

D.C. into A.C.

Answer 285

Low voltage to high voltage

Answer 286

High voltage to low voltage

Answer 287

Diode is neutralized

Answer 288

Diode is reverse biased

Answer 289

None of these

Answer 290

Diode is forward biased

Answer 291

None of these

Answer 292

OR gates only

Answer 293

AND gates, OR gates, and NOT gates

Answer 294

Or gates and NOT gates

Answer 295

AND gates and NOT gates

Answer 296

None of these

Answer 297

Emission of light

Answer 298

Light display

Answer 299

None of these

Answer 300

Detection of light

Answer 301

P and N both are at same potential

Answer 302

High potential at P side and low potential at N side

Answer 303

Undetermined

Answer 304

High potential at N side and low potential at P side

Answer 305

Low degree radiations

Answer 306

None of these

Answer 307

Light dependent resistance

Answer 308

Low degree resistor

Answer 309

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 310

Major current carriers are mobile holes

Answer 311

Major current carriers are mobile negative ions

Answer 312

Major current carriers are electrons

Answer 313

Oscillator

Answer 314

Conduction band is empty and valence band is filled with electrons

Answer 315

Conduction band is filled with electrons and valence bad is empty

Answer 316

Valence band is partially filled with electrons

Answer 317

Conduction band is partially filled with electrons

Answer 318

Holes move from emitter be base

Answer 319

Holes move from emitter to base

Answer 320

Holes move from base to emitter

Answer 321

Electrons move from base to collector

Answer 322

Reverse bias exceeds certain value

Answer 323

Forward bias exceeds certain value

Answer 324

Potential barrier is reduced to zero

Answer 325

Forward current exceeds certain value

Answer 326

Switching device

Answer 327

P-type material

Answer 328

Large number of holes and electrons

Answer 329

Large number of holes and few electrons

Answer 330

Equal number of free electrons and holes

Answer 331

Large number of free electrons and few holes

Answer 332

None of these

Answer 333

Bulk’s modulus

Answer 334

Modulus of electricity

Answer 335

Young’s modulus

Answer 336

Electric field is maximum

Answer 337

Potential is zero

Answer 338

Potential is maximum

Answer 339

Electric field is zero

Answer 340

Tetravalent

Answer 341

Pentavalent

Answer 342

A very low input impedance

Answer 343

A low output impedance

Answer 344

A very high input impedance

Answer 345

None of these

Answer 346

Variable amplitude

Answer 347

Unit amplitude

Answer 348

Constant amplitude

Answer 349

Zero amplitude

Answer 350

The switch

Answer 351

Solar cells

Answer 352

The light emitting diode

Answer 353

The photo diodes

Answer 354

LOW inputs and a LOW output

Answer 355

None of these

Answer 356

HIGH inputs and a HIGH output

Answer 357

LOW inputs and a HIGH output

Answer 358

Increase the minority carrier current

Answer 359

Raises the potential barrier

Answer 360

Lowers the potential barrier

Answer 361

Increases the majority carrier current

Answer 362

Shear stress

Answer 363

Tensile stress

Answer 364

None of these

Answer 365

Compress ional stress

Answer 366

Superconductors

Answer 367

Insulators

Answer 368

Semiconductors

Answer 369

any of above

Answer 370

Off switch

Answer 371

Using a transistor

Answer 372

Using a Coolidge tube

Answer 373

Suppressing the harmonics in A.C voltage

Answer 374

Suppressing half wave of A.C supply by using diode

Answer 375

None of these

Answer 376

Semiconductor

Answer 377

Multivibrator

Answer 378

Oscillator

Answer 379

Three PN-junctions

Answer 380

Two PN-junctions

Answer 381

One PN-junction

Answer 382

Four PN-junctions

Answer 383

Increased by reverse biasing

Answer 384

Increased by forward biasing

Answer 385

Decreased by reverse biasing

Answer 386

Is independent of voltage

Answer 387

Comparator

Answer 388

INVERTER gate

Answer 389

Phosphorus

Answer 390

Electromagnetic Waves

Answer 391

Gamma Rays

Answer 392

Transverse Waves

Answer 393

Either emitter or collector

Answer 394

Each of them increases

Answer 395

Each of them decreases

Answer 396

Copper increases and germanium decreases

Answer 397

Copper decreases and germanium increases

Answer 398

Tightly bound electrons

Answer 399

Free electrons

Answer 400

Valence electrons

Answer 401

None of these

Answer 402

At least one input is HIGH

Answer 403

At least one input is LOW

Answer 404

All inputs are HIGH

Answer 405

All inputs are LOW

Answer 406

None of these

Answer 407

Bulk modulus

Answer 408

Shear modulus

Answer 409

Young’s modulus

Answer 410

Phosphorus

Answer 411

None of these

Answer 412

Semiconductor

Answer 413

N-type material

Answer 414

P-type material

Answer 415

Super conductor

Answer 416

That the base be heated

Answer 417

That the collector be heated

Answer 418

None of these

Answer 419

That the emitter be heated

Answer 420

None of these

Answer 421

91 x 10 Nm¯²

Answer 422

110 Nm¯²

Answer 423

70 x 10 Nm¯²

Answer 424

Heat energy

Answer 425

Light energy

Answer 426

None of these

Answer 427

Chemical energy

Answer 428

Remains unchanged

Answer 429

Decreases and then increases

Answer 430

Electric generations

Answer 431

Transformers

Answer 432

Electric motors

Answer 433

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 434

From pure Ge crystal

Answer 435

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 436

From pure Si crystal

Answer 437

Extra electrons

Answer 438

Missing electrons

Answer 439

Remains unchanged

Answer 440

Decreases and then increases

Answer 441

Positively charged

Answer 442

Negative charged

Answer 443

None of these

Answer 444

Lowers the potential barrier

Answer 445

Raises the potential barrier

Answer 446

Increases the majority carrier current

Answer 447

Increase the minority carrier current

Answer 448

Thickness of collector

Answer 449

Mean of thickness of emitter and collector

Answer 450

Very small as compared to the thickness of emitter and collector

Answer 451

Thickness of emitter

Answer 452

Virtual input

Answer 453

Reference voltage on the other

Answer 454

Non-inverting voltage at output

Answer 455

If both inputs are zero

Answer 456

If either input is zero

Answer 457

If either or both inputs are 1

Answer 458

Only if both inputs are 1

Answer 459

Insulators

Answer 460

Semiconductors

Answer 461

Superconductors

Answer 462

None of these

Answer 463

Superconductor

Answer 464

None of these

Answer 465

Semiconductor

Answer 466

Both collector and emitter are negative with respect to the base

Answer 467

Collector is positive and emitter is at negative potential as the base

Answer 468

Both collector and emitter are positive with respect to the base

Answer 469

Collector is positive and emitter is negative with respect to the base

Answer 470

Holes move from base to emitter

Answer 471

Electrons move from base to collector

Answer 472

Holes move from emitter to base

Answer 473

Holes move from emitter to base

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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