Physics Electronics Online Mcqs Test

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Question 1

1. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Electrons and protons

Answer

Protons and electrons

Answer

Electrons and holes

Answer

Holes and electrons

Question 2

2. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 3

3. A n-p-n transistor conducts when

Answer

Both collector and emitter are positive with respect to the base

Answer

Collector is positive and emitter is at negative potential as the base

Answer

Collector is positive and emitter is negative with respect to the base

Answer

Both collector and emitter are negative with respect to the base

Question 4

4. When aluminum is added as an impurity to silicon, then resulting material is

Answer

p-type semiconductor

Answer

n-type semiconductor

Answer

n-type conductor

Answer

p-type conductor

Question 5

5. The device or circuit used for conversion of A.C. into D.C. is called

Answer

A rectifier

Answer

Filtering circuit

Answer

An amplifier

Question 6

6. Output voltage in full wave rectification is not smooth. In order to have smooth output voltage

Answer

Resistor is used

Answer

Solvent is used

Answer

None of these

Answer

Capacitor is used

Question 7

7. At absolute zero, Si acts as

Answer

None of these

Question 8

8. Application of photodiode is/are

Answer

Automatic switching

Answer

None of these

Answer

Detection of visible and invisible radiations

Answer

Logic gates

Question 9

9. In insulators

Answer

Conduction band is filled with electrons and valence band is empty

Answer

Conduction band is partially filled with electrons

Answer

Valence band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Question 10

10. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 11

11. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 12

12. Photodiode is used for

Answer

Emission of light

Answer

Detection of light

Answer

Light display

Answer

None of these

Question 13

13. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 14

14. The critical temperature for mercury is

Question 15

15. In a P-type semiconductor

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are mobile holes

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are electrons

Question 16

16. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 17

17. Using OP-Amp as an inverting amplifier, the non-inverting terminal has potential

Answer

None of these

Question 18

18. In a semiconductor, the mobility of holes is

Answer

Greater than electrons

Answer

Less than electrons

Answer

Equal to electrons

Question 19

19. Barrier potential of a p-n junction diode does not depend on:

Answer

Doping density

Answer

Diode design

Answer

Temperature

Answer

Forward bias

Question 20

20. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 21

21. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

None of these

Answer

Oscillator

Question 22

22. A NAND gate has:

Answer

LOW inputs and a LOW output

Answer

None of these

Answer

HIGH inputs and a HIGH output

Answer

LOW inputs and a HIGH output

Question 23

23. N-type crystal is

Answer

Negative charged

Answer

None of these

Answer

Positively charged

Question 24

24. n-type germanium is obtained on doping intrinsic germanium with

Answer

Phosphorus

Question 25

25. Conversion of low input a.c. into high output a.c. is called:

Answer

All of these

Answer

Magnification

Answer

Amplification

Answer

Rectification

Question 26

26. Due to high loop gain of the amplifier, the inverting and non-inverting inputs are

Answer

Non-inverting terminal is at high potential

Answer

Both are at the same potential

Answer

Inverting terminal is at high potential

Answer

Both are at the high potential

Question 27

27. In a n-p-n transistor:

Answer

Holes move from base to collector

Answer

Negative charge moves from emitter to base

Answer

Holes move from emitter to base

Answer

Negative charge moves from collector to base

Question 28

28. The electrical circuit used to have smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 29

29. In Germanium crystal, impurity donor elements have valiancy

Question 30

30. When we apply reverse bias to a junction diode, it

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Answer

Increase the majority carrier current

Question 31

31. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is zero

Answer

Electric field is maximum

Answer

Potential is maximum

Answer

Potential is zero

Question 32

32. The ratio β shows the

Answer

None of these

Answer

Current gain

Answer

Voltage gain

Answer

Input resistance

Question 33

33. Transistor can be used as

Answer

Full wave rectifier

Answer

Half wave rectifier

Question 34

34. A photodiode can turn its current ON and OFF in

Answer

Nanosecond

Answer

None of these

Answer

Millisecond

Answer

Microsecond

Question 35

35. In n-p-n transistor, p works as

Answer

Any of above

Question 36

36. Which logic gate is represented by following diagram?

Question 37

37. In p-type semiconductor

Answer

The number of mobile holes exceeds the number of acceptors

Answer

Major carrier is mobile holes

Answer

Major current carrier is electrons

Answer

Major carrier is mobile negative ions

Question 38

38. The materials in which valence band and conduction band overlap are called

Answer

Conductors

Answer

Superconductors

Answer

Semiconductors

Answer

Insulators

Question 39

39. The ratio of applied stress to volumetric strain is called

Answer

Young’s modulus

Answer

Bulk modulus

Answer

Shear modulus

Answer

None of these

Question 40

40. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Increase its electrical conductivity

Answer

Increase its life

Answer

Increase its electrical resistivity

Answer

Enable it to Telerate higher voltage

Question 41

41. The part of a transistor which is heavily doped to produce large number of majority carriers is

Answer

Any of the above depending on nature of transistor

Question 42

42. The potential difference across the depletion region of silicon is

Question 43

43. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Greater than one

Answer

Equal to one

Answer

Less than one

Question 44

44. In p – n junction, after diffusion, a charge less region is formed around the junction is called

Answer

None of these

Answer

Charged region

Answer

Diffusion region

Answer

Depletion region

Question 45

45. The ratio β represents

Question 46

46. In semiconductors at a room temperature

Answer

The valence band is completely filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled and the conduction band is partially filled

Question 47

47. If on increasing temperature the resistance decreases, then it is

Answer

None of these

Answer

Superconductor

Answer

Semiconductor

Question 48

48. What input values will cause an AND logic gate to produce a HIGH output?

Answer

All inputs are HIGH

Answer

At least one input is HIGH

Answer

At least one input is LOW

Answer

All inputs are LOW

Question 49

49. The number of junctions in the PNP transistor are

Question 50

50. The forward resistance of the diode is

Answer

None of these

Question 51

51. In a P-type semiconductor

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are mobile holes

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Question 52

52. At room temperature, a p-type semi-conductor has

Answer

Large number of free electrons and few holes

Answer

Equal number of free electrons and holes

Answer

Large number of holes and electrons

Answer

Large number of holes and few electrons

Question 53

53. In forward bias, the width of potential barrier in a p-n junction diode

Answer

First A and B

Answer

Remains constant

Question 54

54. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 55

55. At absolute zero, Si acts as

Answer

None of these

Question 56

56. Semi-conductors with donor atoms and free electrons belong to the type

Answer

any of above

Question 57

57. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 58

58. The electrons in the outermost shell of an atom are called

Answer

None of these

Answer

Free electrons

Answer

Tightly bound electrons

Answer

Valence electrons

Question 59

59. In insulators

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Valence band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Question 60

60. In n-type substances, the minority carriers are

Answer

None of these

Question 61

61. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

None of these

Answer

Reversed biased

Answer

Zero biased

Answer

Forward biased

Question 62

62. Diode can work as

Answer

Multivibrator

Answer

Oscillator

Question 63

63. Due to the break down the p-n junction suffers

Answer

Require more current

Answer

None of these

Answer

Works efficiently

Question 64

64. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of both increases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of both decreases

Answer

Resistance of copper decreases while that of germanium increases

Answer 166

NAND gates

Answer 167

Decreases slowly

Answer 168

Remain fixed

Answer 169

Increases slowly

Answer 170

Suddenly increases

Answer 171

If both inputs are zero

Answer 172

Only if both inputs are 1

Answer 173

If either input is zero

Answer 174

If either or both inputs are 1

Answer 175

Increases the majority carrier current

Answer 176

Lowers the potential barrier

Answer 177

Raises the potential barrier

Answer 178

Increase the minority carrier current

Answer 179

High potential at N side and low potential at P side

Answer 180

High potential at P side and low potential at N side

Answer 181

Undetermined

Answer 182

P and N both are at same potential

Answer 183

Low voltage to high voltage

Answer 184

High voltage to low voltage

Answer 185

D.C. into A.C.

Answer 186

A.C. into D.C.

Answer 187

Remains same

Answer 188

Missing electrons

Answer 189

Extra electrons

Answer 190

Electric field is maximum

Answer 191

Potential is maximum

Answer 192

Electric field is zero

Answer 193

Potential is zero

Answer 194

Off switch

Answer 195

n-type semiconductor

Answer 196

p-type semiconductor

Answer 197

n-type conductor

Answer 198

p-type conductor

Answer 199

None of these

Answer 200

N-type semiconductor

Answer 201

P-type semiconductor

Answer 202

N-type conductor

Answer 203

Transformers

Answer 204

Electric motors

Answer 205

Electric generations

Answer 206

p-type semiconductor

Answer 207

n-type conductor

Answer 208

p-type conductor

Answer 209

n-type semiconductor

Answer 210

Missing electrons

Answer 211

Extra electrons

Answer 212

Diode is forward biased

Answer 213

Diode is reverse biased

Answer 214

None of these

Answer 215

Diode is neutralized

Answer 216

Transistor

Answer 217

None of these

Answer 218

Phosphorus

Answer 219

Decreases and then increases

Answer 220

Remains unchanged

Answer 221

Any of above

Answer 222

Slightly less than emitter current

Answer 223

Greater than emitter current

Answer 224

Equal to emitter current

Answer 225

Suppressing the harmonics in A.C voltage

Answer 226

Suppressing half wave of A.C supply by using diode

Answer 227

Using a transistor

Answer 228

Using a Coolidge tube

Answer 229

Input and out signals are in phase

Answer 230

Input and out signals are not in phase

Answer 231

May be in phase or not

Answer 232

None of these

Answer 233

Variable amplitude

Answer 234

Unit amplitude

Answer 235

Constant amplitude

Answer 236

Zero amplitude

Answer 237

180° Phase shift

Answer 238

120° Phase shift

Answer 239

No Phase shift

Answer 240

90° Phase shift

Answer 241

Raises the potential barrier

Answer 242

Increase the minority carrier current

Answer 243

Increases the majority carrier current

Answer 244

Lowers the potential barrier

Answer 245

10¯⁶ cm

Answer 246

10¯¹² cm

Answer 247

Not a universal gate

Answer 248

A basic gate

Answer 249

A universal gate

Answer 250

A basic universal gate

Answer 251

Decreased by reverse biasing

Answer 252

Increased by reverse biasing

Answer 253

Is independent of voltage

Answer 254

Increased by forward biasing

Answer 255

Large number of holes and few electrons

Answer 256

Equal number of free electrons and holes

Answer 257

Large number of free electrons and few holes

Answer 258

Large number of holes and electrons

Answer 259

A low output impedance

Answer 260

A very high input impedance

Answer 261

A very low input impedance

Answer 262

None of these

Answer 263

Three PN-junctions

Answer 264

Four PN-junctions

Answer 265

One PN-junction

Answer 266

Two PN-junctions

Answer 267

Is locate on the collector

Answer 268

Point from north to south

Answer 269

Is located on the emitter

Answer 270

Is located on the base

Answer 271

Pentavalent

Answer 272

Tetravalent

Answer 273

Crystal lattice

Answer 274

All of these

Answer 275

Crystalline solids

Answer 276

Glassy solids

Answer 277

Amorphous solids

Answer 278

Polymeric solids

Answer 279

Forward bias exceeds certain value

Answer 280

Forward current exceeds certain value

Answer 281

Reverse bias exceeds certain value

Answer 282

Potential barrier is reduced to zero

Answer 283

The photo diodes

Answer 284

Solar cells

Answer 285

The switch

Answer 286

The light emitting diode

Answer 287

Can be any of the above three

Answer 288

None of these

Answer 289

Current flows in one directions

Answer 290

Only half cycle is used

Answer 291

Current flows in pulses

Answer 292

All of above

Answer 293

Several mega ohms

Answer 294

None of these

Answer 295

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 296

It has low resistance to the current flow when forward biased

Answer 297

It has high resistance to the current flow when reverse biased

Answer 298

Its conductivity increases with rise of temperature

Answer 299

Mean of thickness of emitter and collector

Answer 300

Thickness of emitter

Answer 301

Thickness of collector

Answer 302

Very small as compared to the thickness of emitter and collector

Answer 303

Holes move from emitter to base

Answer 304

Holes move from base to collector

Answer 305

Negative charge moves from emitter to base

Answer 306

Negative charge moves from collector to base

Answer 307

Number of holes increases while that of holes decreases

Answer 308

Number of electrons and holes increases equally

Answer 309

Number of electrons increases while that of holes decreases

Answer 310

Number of electrons and holes remains same

Answer 311

Electrons move from base to emitter

Answer 312

Electrons move from collector to base

Answer 313

Electrons move from emitter to base

Answer 314

Holes move from base to emitter

Answer 315

Super conductor

Answer 316

P-type material

Answer 317

Semiconductor

Answer 318

N-type material

Answer 319

During the manufacturing process

Answer 320

When temperature varies

Answer 321

Under forward bias

Answer 322

Under reverse bias

Answer 323

None of these

Answer 324

Minority carriers

Answer 325

Dual carriers

Answer 326

Majority carriers

Answer 327

All of these

Answer 328

None of these

Answer 329

Common collector configuration

Answer 330

Common emitter configuration

Answer 331

Common base configuration

Answer 332

Tensile stress

Answer 333

Compress ional stress

Answer 334

Shear stress

Answer 335

None of these

Answer 336

Either emitter or collector

Answer 337

Opposes the input signal

Answer 338

Aids the input signal

Answer 339

Is proportional to output current

Answer 340

Is proportional to differential voltage gain

Answer 341

In forward bias

Answer 342

In reverse bias

Answer 343

None of these

Answer 344

The valence band is completely filled and the conduction band is partially filled

Answer 345

The valence band is partially empty and the conduction band is partially filled

Answer 346

The conduction band is completely empty

Answer 347

The valence band is completely filled

Answer 348

Forbidden energy states

Answer 349

None of these

Answer 350

Hidden energy states

Answer 351

Band levels

Answer 352

Semiconductor

Answer 353

Copper decreases and germanium increases

Answer 354

Each of them increases

Answer 355

Copper increases and germanium decreases

Answer 356

Each of them decreases

Answer 357

Virtual input

Answer 358

Non-inverting voltage at output

Answer 359

Reference voltage on the other

Answer 360

Reverse biased

Answer 361

Forward biases

Answer 362

None of these

Answer 363

Bulk’s modulus

Answer 364

Young’s modulus

Answer 365

None of these

Answer 366

Modulus of electricity

Answer 367

Almost negligible

Answer 368

Holes move from base to emitter

Answer 369

Holes move from emitter to base

Answer 370

Holes move from emitter to base

Answer 371

Electrons move from base to collector

Answer 372

None of these

Answer 373

91 x 10 Nm¯²

Answer 374

70 x 10 Nm¯²

Answer 375

110 Nm¯²

Answer 376

Extra electrons

Answer 377

Missing of electrons

Answer 378

INVERTER gate

Answer 379

Comparator

Answer 380

Three diodes in common

Answer 381

Step up transformer

Answer 382

Triode vacuum tube

Answer 383

Step down transformer

Answer 384

Remains unchanged

Answer 385

Decreases and then increases

Answer 386

It offers a very low open loop gain all of above

Answer 387

None of these

Answer 388

It offers a very low output resistance

Answer 389

It offers a very high inputs resistance to the input current

Answer 390

None of these

Answer 391

Almost zero

Answer 392

Oscillator

Answer 393

Man hundred

Answer 394

None of these

Answer 395

Holes move from base to emitter

Answer 396

Holes move from emitter be base

Answer 397

Electrons move from base to collector

Answer 398

Holes move from emitter to base

Answer 399

Drift of charges

Answer 400

Both drift and diffusion of charges

Answer 401

Diffusion of charges

Answer 402

Depends upon the nature of material

Answer 403

P-type material

Answer 404

Switching device

Answer 405

n-carriers and p-carriers respectively

Answer 406

p-carriers only

Answer 407

p-carriers and n-carriers respectively

Answer 408

n-carriers only

Answer 409

Holes in n-type and free electrons in p-type

Answer 410

Free electrons in n-type and p-type

Answer 411

Free electrons in n-type and holes in p-type

Answer 412

Holes in n-type and p-type

Answer 413

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 414

From pure Si crystal

Answer 415

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 416

From pure Ge crystal

Answer 417

Increased by forward biasing

Answer 418

Increased by reverse biasing

Answer 419

Is independent of voltage

Answer 420

Decreased by reverse biasing

Answer 421

None of these

Answer 422

may be p-type or n-type

Answer 423

P-type material

Answer 424

Oscillator

Answer 425

Increase its electrical resistivity

Answer 426

Increases its electrical conductivity

Answer 427

Enable it to Telerate higher voltage

Answer 428

Increase its life

Answer 429

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 430

No bias voltages are required

Answer 431

Both junctions are reverse biased

Answer 432

Both junctions are forward biased

Answer 433

Insulators

Answer 434

Superconductors

Answer 435

Semiconductors

Answer 436

Heat energy

Answer 437

None of these

Answer 438

Chemical energy

Answer 439

Light energy

Answer 440

Semiconductor

Answer 441

None of these

Answer 442

Insulators

Answer 443

Superconductors

Answer 444

Semiconductors

Answer 445

D.C. into A.C.

Answer 446

Low voltage to high voltage

Answer 447

High voltage to low voltage

Answer 448

A.C. into D.C.

Answer 449

That the collector be heated

Answer 450

That the base be heated

Answer 451

That the emitter be heated

Answer 452

None of these

Answer 453

OR gates only

Answer 454

AND gates, OR gates, and NOT gates

Answer 455

AND gates and NOT gates

Answer 456

Or gates and NOT gates

Answer 457

Oscillator

Answer 458

Logic gates

Answer 459

Transverse Waves

Answer 460

Gamma Rays

Answer 461

Electromagnetic Waves

Answer 462

Low degree resistor

Answer 463

Light dependent resistance

Answer 464

None of these

Answer 465

Low degree radiations

Answer 466

Diode is forward based

Answer 467

Potential barrier in depletion layer remains unchanged

Answer 468

Potential barrier in depletion layer increases

Answer 469

Diode is reverse biased

Answer 470

Each of them increases

Answer 471

Each of them decreases

Answer 472

Copper decreases and germanium increases

Answer 473

Copper increases and germanium decreases

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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