Physics Electronics Online Mcqs Test

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Question 1

1. A signal applied at the non-inverting input, of an O.P that appears after amplification at the output terminal, with

Answer

90° Phase shift

Answer

180° Phase shift

Answer

No Phase shift

Answer

120° Phase shift

Question 2

2. The materials in which valence band and conduction band overlap are called

Answer

Semiconductors

Answer

Superconductors

Answer

Insulators

Answer

Conductors

Question 3

3. In insulators

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Question 4

4. Which one is reverse-biased?

Question 5

5. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is zero

Answer

Electric field is maximum

Answer

Potential is maximum

Answer

Potential is zero

Question 6

6. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Decreases slowly

Answer

Suddenly increases

Answer

Remain fixed

Answer

Increases slowly

Question 7

7. When aluminum is added as an impurity to silicon, then resulting material is

Answer

p-type semiconductor

Answer

p-type conductor

Answer

n-type conductor

Answer

n-type semiconductor

Question 8

8. The simplest type of rectification known as half wave rectification is obtained by

Answer

Suppressing half wave of A.C supply by using diode

Answer

Using a Coolidge tube

Answer

Using a transistor

Answer

Suppressing the harmonics in A.C voltage

Question 9

9. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of both decreases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of both increases

Answer

Resistance of copper decreases while that of germanium increases

Question 10

10. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

None of these

Answer

Diode is forward biased

Answer

Diode is reverse biased

Answer

Diode is neutralized

Question 11

11. The width of a depletion layer in a p-n junction is

Answer

Increased by forward biasing

Answer

Decreased by reverse biasing

Answer

Is independent of voltage

Answer

Increased by reverse biasing

Question 12

12. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Diode is forward based

Answer

Potential barrier in depletion layer remains unchanged

Answer

Potential barrier in depletion layer increases

Answer

Diode is reverse biased

Question 13

13. Acceptor and donor impurities donate

Answer

n-carriers and p-carriers respectively

Answer

p-carriers only

Answer

p-carriers and n-carriers respectively

Answer

n-carriers only

Question 14

14. In a P-type semiconductor

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile holes

Question 15

15. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Copper decreases and germanium increases

Answer

Each of them increases

Answer

Each of them decreases

Answer

Copper increases and germanium decreases

Question 16

16. Output voltage in full wave rectification is not smooth. In order to have smooth output voltage

Answer

Solvent is used

Answer

Resistor is used

Answer

None of these

Answer

Capacitor is used

Question 17

17. A substance which have empty conduction band is called

Answer

None of these

Answer

Semiconductor

Question 18

18. n-type germanium is obtained on doping intrinsic germanium with

Answer

Phosphorus

Question 19

19. A pieced of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Copper increases and germanium decreases

Answer

Each of them decreases

Answer

Each of them increases

Answer

Copper decreases and germanium increases

Question 20

20. In comma emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 21

21. The thickness of the base is equal to

Answer

Very small as compared to the thickness of emitter and collector

Answer

Thickness of collector

Answer

Mean of thickness of emitter and collector

Answer

Thickness of emitter

Question 22

22. In semiconductors at a room temperature

Answer

The valence band is completely filled

Answer

The conduction band is completely empty

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled and the conduction band is partially filled

Question 23

23. The working of transistor as amplifier is similar to

Answer

Triode vacuum tube

Answer

Step up transformer

Answer

Three diodes in common

Answer

Step down transformer

Question 24

24. To use a transistor as an amplifier

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

Both junctions are forward biased

Answer

No bias voltages are required

Answer

Both junctions are reverse biased

Question 25

25. In a good conductor, the energy gap between the conduction band and the valence band is

Question 26

26. In a P-type semiconductor

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are mobile holes

Answer

Major current carriers are electrons

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Question 27

27. A n-p-n transistor conducts when

Answer

Both collector and emitter are positive with respect to the base

Answer

Collector is positive and emitter is negative with respect to the base

Answer

Collector is positive and emitter is at negative potential as the base

Answer

Both collector and emitter are negative with respect to the base

Question 28

28. In Germanium crystal, impurity donor elements have valiancy

Question 29

29. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 30

30. If on increasing temperature the resistance decreases, then it is

Answer

Superconductor

Answer

None of these

Answer

Semiconductor

Question 31

31. In semiconductors at a room temperature

Answer

The valence band is completely filled

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is partially empty and the conduction band is partially filled

Question 32

32. Which is normal used of transistor?

Answer

Switching device

Answer

P-type material

Question 33

33. The ratio of tensile stress to tensile strain is called

Answer

None of these

Answer

Bulk’s modulus

Answer

Young’s modulus

Answer

Modulus of electricity

Question 34

34. The units of modulus of elasticity are same as that of

Answer

None of these

Question 35

35. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is zero

Answer

Potential is zero

Answer

Electric field is maximum

Answer

Potential is maximum

Question 36

36. Non-inverting amplifier circuits have

Answer

A very high input impedance

Answer

A very low input impedance

Answer

A low output impedance

Answer

None of these

Question 37

37. The switch is open when the resistance between C and E becomes

Answer

None of these

Answer

Almost zero

Question 38

38. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 39

39. Identify the correct statement about minority carriers

Answer

Free electrons in n-type and holes in p-type

Answer

Holes in n-type and free electrons in p-type

Answer

Holes in n-type and p-type

Answer

Free electrons in n-type and p-type

Question 40

40. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

Forbidden energy states

Answer

Band levels

Answer

None of these

Answer

Hidden energy states

Question 41

41. Polythene, potystrene and nylon are examples of

Answer

Amorphous solids

Answer

Crystalline solids

Answer

Polymeric solids

Answer

Glassy solids

Question 42

42. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 43

43. When boron is added as an impurity to silicon, the resulting material is:

Answer

n-type semiconductor

Answer

p-type conductor

Answer

n-type conductor

Answer

p-type semiconductor

Question 44

44. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 45

45. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Forward biased

Answer

Zero biased

Answer

None of these

Answer

Reversed biased

Question 46

46. The whole structure obtained by the repetition of unit cell is known as

Answer

All of these

Answer

Crystal lattice

Question 47

47. When NPN transistor is used as an amplifier

Answer

Electrons move from emitter to base

Answer

Holes move from base to emitter

Answer

Electrons move from collector to base

Answer

Electrons move from base to emitter

Question 48

48. Barrier potential of a p-n junction diode does not depend on:

Answer

Forward bias

Answer

Temperature

Answer

Doping density

Answer

Diode design

Question 49

49. The electrical circuit used to have smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 50

50. In a n-p-n transistor:

Answer

Holes move from emitter to base

Answer

Negative charge moves from collector to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from base to collector

Question 51

51. Transistors with various combinations are widely used as switches in:

Answer

Transformers

Answer

Electric motors

Answer

Electric generations

Question 52

52. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 53

53. What input values will cause an AND logic gate to produce a HIGH output?

Answer

All inputs are HIGH

Answer

At least one input is HIGH

Answer

At least one input is LOW

Answer

All inputs are LOW

Question 54

54. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 55

55. When a p-n junction diode is reverse biased, the flow of current across the junction is mainly due to

Answer

Drift of charges

Answer

Diffusion of charges

Answer

Both drift and diffusion of charges

Answer

Depends upon the nature of material

Question 56

56. The p-n junction diode works as insulator, if connected

Answer

In reverse bias

Answer

In forward bias

Answer

None of these

Question 57

57. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Holes and electrons

Answer

Electrons and holes

Answer

Protons and electrons

Answer

Electrons and protons

Question 58

58. When arsenic is added as an impurity to silicon, the resulting material is

Answer

N-type conductor

Answer

P-type semiconductor

Answer

None of these

Answer

N-type semiconductor

Question 59

59. Young’s modulus for copper is

Answer

110 Nm¯²

Answer

91 x 10 Nm¯²

Answer

70 x 10 Nm¯²

Answer

None of these

Question 60

60. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Equal to one

Answer

Greater than one

Answer

Less than one

Question 61

61. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 62

62. When the output of OR gate is 1

Answer

If either or both inputs are 1

Answer

Only if both inputs are 1

Answer

If both inputs are zero

Answer

If either input is zero

Question 63

63. A diode as a rectifier converts:

Answer

Low voltage to high voltage

Answer

A.C. into D.C.

Answer

D.C. into A.C.

Answer

High voltage to low voltage

Question 64

64. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Reference voltage on the other

Answer

Non-inverting voltage at output

Answer

Virtual input

Answer 201

Dual carriers

Answer 202

Minority carriers

Answer 203

Majority carriers

Answer 204

Oscillator

Answer 205

Logic gates

Answer 206

Transistor

Answer 207

Detection of visible and invisible radiations

Answer 208

Automatic switching

Answer 209

Logic gates

Answer 210

None of these

Answer 211

Man hundred

Answer 212

None of these

Answer 213

Increase its electrical resistivity

Answer 214

Increase its life

Answer 215

Enable it to Telerate higher voltage

Answer 216

Increase its electrical conductivity

Answer 217

Any of above

Answer 218

Insulators

Answer 219

Semiconductors

Answer 220

Superconductors

Answer 221

None of these

Answer 222

Increase its life

Answer 223

Enable it to Telerate higher voltage

Answer 224

Increases its electrical conductivity

Answer 225

Increase its electrical resistivity

Answer 226

An amplifier

Answer 227

A rectifier

Answer 228

Filtering circuit

Answer 229

Common emitter configuration

Answer 230

None of these

Answer 231

Common collector configuration

Answer 232

Common base configuration

Answer 233

Conduction band is filled with electrons and valence band is empty

Answer 234

Conduction band is partially filled with electrons

Answer 235

Conduction band is empty and valence band is filled with electrons

Answer 236

Valence band is partially filled with electrons

Answer 237

All of these

Answer 238

Rectification

Answer 239

Magnification

Answer 240

Amplification

Answer 241

None of these

Answer 242

Bulk modulus

Answer 243

Young’s modulus

Answer 244

Shear modulus

Answer 245

Positively charged

Answer 246

Negative charged

Answer 247

None of these

Answer 248

Can be any of the above three

Answer 249

It offers a very high inputs resistance to the input current

Answer 250

None of these

Answer 251

It offers a very low output resistance

Answer 252

It offers a very low open loop gain all of above

Answer 253

Phosphorus

Answer 254

Negative charge moves from emitter to base

Answer 255

Holes move from emitter to base

Answer 256

Negative charge moves from collector to base

Answer 257

Holes move from base to collector

Answer 258

Or gates and NOT gates

Answer 259

OR gates only

Answer 260

AND gates, OR gates, and NOT gates

Answer 261

AND gates and NOT gates

Answer 262

Off switch

Answer 263

Point from north to south

Answer 264

Is located on the emitter

Answer 265

Is locate on the collector

Answer 266

Is located on the base

Answer 267

High potential at N side and low potential at P side

Answer 268

Undetermined

Answer 269

High potential at P side and low potential at N side

Answer 270

P and N both are at same potential

Answer 271

Two PN-junctions

Answer 272

Four PN-junctions

Answer 273

One PN-junction

Answer 274

Three PN-junctions

Answer 275

All of these

Answer 276

None of these

Answer 277

Tensile stress

Answer 278

Compress ional stress

Answer 279

Shear stress

Answer 280

Constant amplitude

Answer 281

Unit amplitude

Answer 282

Variable amplitude

Answer 283

Zero amplitude

Answer 284

None of these

Answer 285

Number of electrons and holes remains same

Answer 286

Number of electrons and holes increases equally

Answer 287

Number of holes increases while that of holes decreases

Answer 288

Number of electrons increases while that of holes decreases

Answer 289

Is independent of voltage

Answer 290

Decreased by reverse biasing

Answer 291

Increased by forward biasing

Answer 292

Increased by reverse biasing

Answer 293

10¯⁶ cm

Answer 294

10¯¹² cm

Answer 295

Current gain

Answer 296

Input resistance

Answer 297

None of these

Answer 298

Voltage gain

Answer 299

Extra electrons

Answer 300

Missing electrons

Answer 301

INVERTER gate

Answer 302

Comparator

Answer 303

The photo diodes

Answer 304

The light emitting diode

Answer 305

The switch

Answer 306

Solar cells

Answer 307

Low degree radiations

Answer 308

Light dependent resistance

Answer 309

None of these

Answer 310

Low degree resistor

Answer 311

Multivibrator

Answer 312

Oscillator

Answer 313

Reverse bias exceeds certain value

Answer 314

Potential barrier is reduced to zero

Answer 315

Forward current exceeds certain value

Answer 316

Forward bias exceeds certain value

Answer 317

All of above

Answer 318

Major carrier is mobile holes

Answer 319

The number of mobile holes exceeds the number of acceptors

Answer 320

Major carrier is mobile negative ions

Answer 321

Major current carrier is electrons

Answer 322

Almost negligible

Answer 323

Emission of light

Answer 324

None of these

Answer 325

Detection of light

Answer 326

Light display

Answer 327

Missing of electrons

Answer 328

Extra electrons

Answer 329

Large number of holes and few electrons

Answer 330

Equal number of free electrons and holes

Answer 331

Large number of holes and electrons

Answer 332

Large number of free electrons and few holes

Answer 333

Remains constant

Answer 334

First A and B

Answer 335

Low voltage to high voltage

Answer 336

D.C. into A.C.

Answer 337

High voltage to low voltage

Answer 338

A.C. into D.C.

Answer 339

That the emitter be heated

Answer 340

That the collector be heated

Answer 341

None of these

Answer 342

That the base be heated

Answer 343

Forward biases

Answer 344

Reverse biased

Answer 345

None of these

Answer 346

Tetravalent

Answer 347

Pentavalent

Answer 348

Semiconductor

Answer 349

Millisecond

Answer 350

None of these

Answer 351

Microsecond

Answer 352

Nanosecond

Answer 353

Phosphorus

Answer 354

None of these

Answer 355

Only half cycle is used

Answer 356

Current flows in one directions

Answer 357

Current flows in pulses

Answer 358

Oscillator

Answer 359

P-type material

Answer 360

Light energy

Answer 361

Heat energy

Answer 362

None of these

Answer 363

Chemical energy

Answer 364

Greater than electrons

Answer 365

Less than electrons

Answer 366

Equal to electrons

Answer 367

Holes move from emitter to base

Answer 368

Holes move from emitter be base

Answer 369

Electrons move from base to collector

Answer 370

Holes move from base to emitter

Answer 371

any of above

Answer 372

None of these

Answer 373

None of these

Answer 374

None of these

Answer 375

Input and out signals are in phase

Answer 376

May be in phase or not

Answer 377

Input and out signals are not in phase

Answer 378

None of these

Answer 379

Free electrons

Answer 380

Tightly bound electrons

Answer 381

Valence electrons

Answer 382

None of these

Answer 383

Charged region

Answer 384

None of these

Answer 385

Diffusion region

Answer 386

Depletion region

Answer 387

LOW inputs and a LOW output

Answer 388

None of these

Answer 389

LOW inputs and a HIGH output

Answer 390

HIGH inputs and a HIGH output

Answer 391

A universal gate

Answer 392

A basic universal gate

Answer 393

A basic gate

Answer 394

Not a universal gate

Answer 395

Phosphorus

Answer 396

Any of the above depending on nature of transistor

Answer 397

Mobile ions

Answer 398

Immobile ions

Answer 399

Remains same

Answer 400

Its conductivity increases with rise of temperature

Answer 401

It has low resistance to the current flow when forward biased

Answer 402

It has high resistance to the current flow when reverse biased

Answer 403

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 404

Electrons move from base to collector

Answer 405

Holes move from emitter to base

Answer 406

Holes move from base to emitter

Answer 407

Holes move from emitter to base

Answer 408

From pure Si crystal

Answer 409

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 410

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 411

From pure Ge crystal

Answer 412

Lowers the potential barrier

Answer 413

Increases the majority carrier current

Answer 414

Increase the minority carrier current

Answer 415

Raises the potential barrier

Answer 416

Works efficiently

Answer 417

None of these

Answer 418

Require more current

Answer 419

Missing electrons

Answer 420

Extra electrons

Answer 421

Raises the potential barrier

Answer 422

Increases the majority carrier current

Answer 423

Lowers the potential barrier

Answer 424

Increase the minority carrier current

Answer 425

Oscillator

Answer 426

Non-inverting terminal is at high potential

Answer 427

Both are at the same potential

Answer 428

Both are at the high potential

Answer 429

Inverting terminal is at high potential

Answer 430

may be p-type or n-type

Answer 431

None of these

Answer 432

Lowers the potential barrier

Answer 433

Increase the majority carrier current

Answer 434

Raises the potential barrier

Answer 435

Increase the minority carrier current

Answer 436

When temperature varies

Answer 437

Under reverse bias

Answer 438

During the manufacturing process

Answer 439

Under forward bias

Answer 440

Semiconductors

Answer 441

Superconductors

Answer 442

Insulators

Answer 443

None of these

Answer 444

Is proportional to differential voltage gain

Answer 445

Is proportional to output current

Answer 446

Opposes the input signal

Answer 447

Aids the input signal

Answer 448

Electromagnetic Waves

Answer 449

Gamma Rays

Answer 450

Transverse Waves

Answer 451

Decreases and then increases

Answer 452

Remains unchanged

Answer 453

Slightly less than emitter current

Answer 454

Greater than emitter current

Answer 455

Equal to emitter current

Answer 456

Any of above

Answer 457

n-type semiconductor

Answer 458

p-type conductor

Answer 459

n-type conductor

Answer 460

p-type semiconductor

Answer 461

Several mega ohms

Answer 462

Full wave rectifier

Answer 463

Half wave rectifier

Answer 464

Large number of holes and few electrons

Answer 465

Large number of holes and electrons

Answer 466

Equal number of free electrons and holes

Answer 467

Large number of free electrons and few holes

Answer 468

P-type material

Answer 469

Super conductor

Answer 470

N-type material

Answer 471

Semiconductor

Answer 472

Either emitter or collector

Answer 473

None of these

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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