Physics Electronics Online Mcqs Test

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Question 1

1. A NAND gate has:

Answer

LOW inputs and a LOW output

Answer

LOW inputs and a HIGH output

Answer

None of these

Answer

HIGH inputs and a HIGH output

Question 2

2. Which is normal used of transistor?

Answer

P-type material

Answer

Switching device

Question 3

3. NAND gate is

Answer

A basic gate

Answer

A universal gate

Answer

A basic universal gate

Answer

Not a universal gate

Question 4

4. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 5

5. Photovoltaic cell produces electrical energy from

Answer

Chemical energy

Answer

Light energy

Answer

None of these

Answer

Heat energy

Question 6

6. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increases its electrical conductivity

Answer

Increase its electrical resistivity

Answer

Enable it to Telerate higher voltage

Answer

Increase its life

Question 7

7. Polythene, potystrene and nylon are examples of

Answer

Crystalline solids

Answer

Amorphous solids

Answer

Glassy solids

Answer

Polymeric solids

Question 8

8. Which of the following is not characteristic of an op—amp

Answer

It offers a very low open loop gain all of above

Answer

It offers a very high inputs resistance to the input current

Answer

It offers a very low output resistance

Answer

None of these

Question 9

9. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 10

10. In half wave rectification

Answer

Current flows in one directions

Answer

Current flows in pulses

Answer

Only half cycle is used

Answer

None of these

Question 11

11. In comma emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 12

12. With negative feedback, the returning signal:

Answer

Opposes the input signal

Answer

Is proportional to output current

Answer

Aids the input signal

Answer

Is proportional to differential voltage gain

Question 13

13. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 14

14. The ratio β shows the

Answer

None of these

Answer

Input resistance

Answer

Voltage gain

Answer

Current gain

Question 15

15. A diode as a rectifier converts:

Answer

Low voltage to high voltage

Answer

A.C. into D.C.

Answer

D.C. into A.C.

Answer

High voltage to low voltage

Question 16

16. Reverse bias applied on a junction diode

Answer

Lowers the potential barrier

Answer

Increase the minority carrier current

Answer

Increases the majority carrier current

Answer

Raises the potential barrier

Question 17

17. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 18

18. The thickness of the base is equal to

Answer

Mean of thickness of emitter and collector

Answer

Thickness of collector

Answer

Very small as compared to the thickness of emitter and collector

Answer

Thickness of emitter

Question 19

19. When NPN transistor is used as an amplifier

Answer

Electrons move from collector to base

Answer

Holes move from base to emitter

Answer

Electrons move from base to emitter

Answer

Electrons move from emitter to base

Question 20

20. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 21

21. In a good conductor, the energy gap between the conduction band and the valence band is

Question 22

22. A photodiode can turn its current ON and OFF in

Answer

Microsecond

Answer

Nanosecond

Answer

None of these

Answer

Millisecond

Question 23

23. Depletion region of a junction is formed

Answer

During the manufacturing process

Answer

Under reverse bias

Answer

When temperature varies

Answer

Under forward bias

Question 24

24. At absolute zero, Si acts as

Answer

None of these

Question 25

25. The simplest type of rectification known as half wave rectification is obtained by

Answer

Suppressing the harmonics in A.C voltage

Answer

Using a Coolidge tube

Answer

Suppressing half wave of A.C supply by using diode

Answer

Using a transistor

Question 26

26. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Greater than one

Answer

Less than one

Answer

Equal to one

Question 27

27. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 28

28. In a junction diode, the holes are due to

Answer

Extra electrons

Answer

Missing of electrons

Question 29

29. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Reference voltage on the other

Answer

Virtual input

Answer

Non-inverting voltage at output

Question 30

30. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 31

31. Arsenic, antimony or phosphorus are impurities of

Answer

may be p-type or n-type

Answer

None of these

Question 32

32. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of both decreases

Answer

Resistance of copper decreases while that of germanium increases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of both increases

Question 33

33. In p-n-p transistor the collector current is

Answer

Slightly less than emitter current

Answer

Greater than emitter current

Answer

Equal to emitter current

Answer

Any of above

Question 34

34. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

OR gates only

Answer

Or gates and NOT gates

Answer

AND gates and NOT gates

Answer

AND gates, OR gates, and NOT gates

Question 35

35. p-n junction when reversed biased acts as a

Answer

Off switch

Question 36

36. Non-inverting amplifier circuits have

Answer

A low output impedance

Answer

A very high input impedance

Answer

A very low input impedance

Answer

None of these

Question 37

37. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 38

38. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 39

39. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Zero biased

Answer

Reversed biased

Answer

Forward biased

Answer

None of these

Question 40

40. In a semiconductor, the mobility of holes is

Answer

Greater than electrons

Answer

Less than electrons

Answer

Equal to electrons

Question 41

41. Acceptor and donor impurities donate

Answer

n-carriers only

Answer

p-carriers only

Answer

n-carriers and p-carriers respectively

Answer

p-carriers and n-carriers respectively

Question 42

42. The part of a transistor which is heavily doped to produce large number of majority carriers is

Answer

Any of the above depending on nature of transistor

Question 43

43. The basic logic gate whose output is the complement of the input is the:

Answer

Comparator

Answer

INVERTER gate

Question 44

44. LDR means:

Answer

None of these

Answer

Low degree resistor

Answer

Light dependent resistance

Answer

Low degree radiations

Question 45

45. The units of modulus of elasticity are same as that of

Answer

None of these

Question 46

46. When an alternating accelerating field is applied to a charge it produces

Answer

Gamma Rays

Answer

Electromagnetic Waves

Answer

Transverse Waves

Question 47

47. The critical temperature for mercury is

Question 48

48. If a signal passing through a gate is inhibited by sending a low into one of the inputs, and the output is HIGH, the gate is a(n):

Question 49

49. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

n-type conductor

Answer

p-type conductor

Answer

p-type semiconductor

Question 50

50. An OP-AMPs can amplify

Answer

Both A.C. & D.C.

Answer

None of these

Question 51

51. In n-p-n transistor, p works as

Answer

Any of above

Question 52

52. In a n-p-n transistor:

Answer

Negative charge moves from collector to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Question 53

53. The energy band gap is maximum in

Answer

Insulators

Answer

Semiconductors

Answer

Superconductors

Question 54

54. A device which converts an alternating current to direct current is called

Answer

Oscillator

Answer

P-type material

Question 55

55. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 56

56. Conversion of low input a.c. into high output a.c. is called:

Answer

All of these

Answer

Rectification

Answer

Amplification

Answer

Magnification

Question 57

57. In insulators

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Conduction band is empty and valence band is filled with electrons

Question 58

58. At absolute zero, Si acts as

Answer

None of these

Question 59

59. A diode as a rectifier converts:

Answer

Low voltage to high voltage

Answer

D.C. into A.C.

Answer

High voltage to low voltage

Answer

A.C. into D.C.

Question 60

60. In a p-type semiconductor germanium is doped with:

Answer

All of these

Question 61

61. Transistor can be used as

Answer

Full wave rectifier

Answer

Half wave rectifier

Question 62

62. A p-n junction has a thickness of the order of:

Answer

10¯⁶ cm

Answer

10¯¹² cm

Question 63

63. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

The switch

Answer

Solar cells

Answer

The light emitting diode

Answer

The photo diodes

Question 64

64. Young’s modulus for copper is

Answer

110 Nm¯²

Answer

70 x 10 Nm¯²

Answer

None of these

Answer

91 x 10 Nm¯²

Answer 169

A rectifier

Answer 170

An amplifier

Answer 171

Filtering circuit

Answer 172

None of these

Answer 173

Oscillator

Answer 174

Large number of holes and electrons

Answer 175

Equal number of free electrons and holes

Answer 176

Large number of holes and few electrons

Answer 177

Large number of free electrons and few holes

Answer 178

Solvent is used

Answer 179

Resistor is used

Answer 180

Capacitor is used

Answer 181

None of these

Answer 182

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 183

From pure Ge crystal

Answer 184

From pure Si crystal

Answer 185

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 186

Semiconductor

Answer 187

P-type material

Answer 188

Super conductor

Answer 189

N-type material

Answer 190

Number of electrons and holes remains same

Answer 191

Number of electrons increases while that of holes decreases

Answer 192

Number of holes increases while that of holes decreases

Answer 193

Number of electrons and holes increases equally

Answer 194

Several mega ohms

Answer 195

Increased by forward biasing

Answer 196

Increased by reverse biasing

Answer 197

Decreased by reverse biasing

Answer 198

Is independent of voltage

Answer 199

Potential barrier is reduced to zero

Answer 200

Forward current exceeds certain value

Answer 201

Forward bias exceeds certain value

Answer 202

Reverse bias exceeds certain value

Answer 203

No bias voltages are required

Answer 204

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 205

Both junctions are forward biased

Answer 206

Both junctions are reverse biased

Answer 207

Phosphorus

Answer 208

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 209

Major current carriers are mobile holes

Answer 210

Major current carriers are electrons

Answer 211

Major current carriers are mobile negative ions

Answer 212

Is independent of voltage

Answer 213

Increased by reverse biasing

Answer 214

Increased by forward biasing

Answer 215

Decreased by reverse biasing

Answer 216

None of these

Answer 217

Electrons and holes

Answer 218

Electrons and protons

Answer 219

Protons and electrons

Answer 220

Holes and electrons

Answer 221

Three diodes in common

Answer 222

Triode vacuum tube

Answer 223

Step up transformer

Answer 224

Step down transformer

Answer 225

None of these

Answer 226

Common collector configuration

Answer 227

Common emitter configuration

Answer 228

Common base configuration

Answer 229

Increase the minority carrier current

Answer 230

Lowers the potential barrier

Answer 231

Raises the potential barrier

Answer 232

Increases the majority carrier current

Answer 233

Collector is positive and emitter is negative with respect to the base

Answer 234

Collector is positive and emitter is at negative potential as the base

Answer 235

Both collector and emitter are positive with respect to the base

Answer 236

Both collector and emitter are negative with respect to the base

Answer 237

Temperature

Answer 238

Diode design

Answer 239

Forward bias

Answer 240

Doping density

Answer 241

Input and out signals are not in phase

Answer 242

Input and out signals are in phase

Answer 243

None of these

Answer 244

May be in phase or not

Answer 245

Compress ional stress

Answer 246

None of these

Answer 247

Tensile stress

Answer 248

Shear stress

Answer 249

Forbidden energy states

Answer 250

None of these

Answer 251

Hidden energy states

Answer 252

Band levels

Answer 253

It has low resistance to the current flow when forward biased

Answer 254

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 255

Its conductivity increases with rise of temperature

Answer 256

It has high resistance to the current flow when reverse biased

Answer 257

None of these

Answer 258

Man hundred

Answer 259

Dual carriers

Answer 260

Majority carriers

Answer 261

Minority carriers

Answer 262

Negative charge moves from emitter to base

Answer 263

Holes move from base to collector

Answer 264

Negative charge moves from collector to base

Answer 265

Holes move from emitter to base

Answer 266

The valence band is partially empty and the conduction band is partially filled

Answer 267

The valence band is completely filled and the conduction band is partially filled

Answer 268

The conduction band is completely empty

Answer 269

The valence band is completely filled

Answer 270

In forward bias

Answer 271

In reverse bias

Answer 272

None of these

Answer 273

Conductors

Answer 274

Semiconductors

Answer 275

Insulators

Answer 276

Superconductors

Answer 277

Major current carriers are electrons

Answer 278

Major current carriers are mobile negative ions

Answer 279

Major current carriers are mobile holes

Answer 280

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 281

Each of them increases

Answer 282

Each of them decreases

Answer 283

Copper decreases and germanium increases

Answer 284

Copper increases and germanium decreases

Answer 285

120° Phase shift

Answer 286

90° Phase shift

Answer 287

180° Phase shift

Answer 288

No Phase shift

Answer 289

Can be any of the above three

Answer 290

None of these

Answer 291

Transistor

Answer 292

Both are at the same potential

Answer 293

Non-inverting terminal is at high potential

Answer 294

Inverting terminal is at high potential

Answer 295

Both are at the high potential

Answer 296

Bulk’s modulus

Answer 297

None of these

Answer 298

Modulus of electricity

Answer 299

Young’s modulus

Answer 300

Potential is maximum

Answer 301

Potential is zero

Answer 302

Electric field is maximum

Answer 303

Electric field is zero

Answer 304

None of these

Answer 305

All inputs are LOW

Answer 306

At least one input is HIGH

Answer 307

At least one input is LOW

Answer 308

All inputs are HIGH

Answer 309

Phosphorus

Answer 310

Electric generations

Answer 311

Electric motors

Answer 312

Transformers

Answer 313

Logic gates

Answer 314

None of these

Answer 315

Detection of visible and invisible radiations

Answer 316

Automatic switching

Answer 317

n-type conductor

Answer 318

p-type semiconductor

Answer 319

p-type conductor

Answer 320

n-type semiconductor

Answer 321

Missing electrons

Answer 322

Extra electrons

Answer 323

If either input is zero

Answer 324

If both inputs are zero

Answer 325

If either or both inputs are 1

Answer 326

Only if both inputs are 1

Answer 327

None of these

Answer 328

Two PN-junctions

Answer 329

One PN-junction

Answer 330

Three PN-junctions

Answer 331

Four PN-junctions

Answer 332

Logic gates

Answer 333

Oscillator

Answer 334

Lowers the potential barrier

Answer 335

Increase the majority carrier current

Answer 336

Increase the minority carrier current

Answer 337

Raises the potential barrier

Answer 338

Holes in n-type and free electrons in p-type

Answer 339

Holes in n-type and p-type

Answer 340

Free electrons in n-type and p-type

Answer 341

Free electrons in n-type and holes in p-type

Answer 342

Electric field is zero

Answer 343

Potential is maximum

Answer 344

Potential is zero

Answer 345

Electric field is maximum

Answer 346

Depletion region

Answer 347

Charged region

Answer 348

Diffusion region

Answer 349

None of these

Answer 350

Semiconductor

Answer 351

Semiconductor

Answer 352

None of these

Answer 353

Oscillator

Answer 354

Increase its life

Answer 355

Increase its electrical resistivity

Answer 356

Increase its electrical conductivity

Answer 357

Enable it to Telerate higher voltage

Answer 358

Forward biases

Answer 359

None of these

Answer 360

Reverse biased

Answer 361

Equal number of free electrons and holes

Answer 362

Large number of holes and electrons

Answer 363

Large number of free electrons and few holes

Answer 364

Large number of holes and few electrons

Answer 365

Either emitter or collector

Answer 366

Conduction band is partially filled with electrons

Answer 367

Conduction band is empty and valence band is filled with electrons

Answer 368

Conduction band is filled with electrons and valence band is empty

Answer 369

Valence band is partially filled with electrons

Answer 370

Potential barrier in depletion layer increases

Answer 371

Diode is forward based

Answer 372

Diode is reverse biased

Answer 373

Potential barrier in depletion layer remains unchanged

Answer 374

Positively charged

Answer 375

None of these

Answer 376

Negative charged

Answer 377

Semiconductor

Answer 378

None of these

Answer 379

Superconductor

Answer 380

None of these

Answer 381

N-type semiconductor

Answer 382

N-type conductor

Answer 383

P-type semiconductor

Answer 384

Tetravalent

Answer 385

Pentavalent

Answer 386

First A and B

Answer 387

Remains constant

Answer 388

Remains same

Answer 389

Point from north to south

Answer 390

Is located on the emitter

Answer 391

Is locate on the collector

Answer 392

Is located on the base

Answer 393

Works efficiently

Answer 394

Require more current

Answer 395

None of these

Answer 396

Undetermined

Answer 397

High potential at P side and low potential at N side

Answer 398

P and N both are at same potential

Answer 399

High potential at N side and low potential at P side

Answer 400

None of these

Answer 401

Light display

Answer 402

Detection of light

Answer 403

Emission of light

Answer 404

That the base be heated

Answer 405

That the collector be heated

Answer 406

None of these

Answer 407

That the emitter be heated

Answer 408

Decreases and then increases

Answer 409

Remains unchanged

Answer 410

Both drift and diffusion of charges

Answer 411

Depends upon the nature of material

Answer 412

Diffusion of charges

Answer 413

Drift of charges

Answer 414

Oscillator

Answer 415

Logic gates

Answer 416

Tightly bound electrons

Answer 417

Free electrons

Answer 418

Valence electrons

Answer 419

None of these

Answer 420

Unit amplitude

Answer 421

Zero amplitude

Answer 422

Variable amplitude

Answer 423

Constant amplitude

Answer 424

None of these

Answer 425

Almost zero

Answer 426

Phosphorus

Answer 427

Copper decreases and germanium increases

Answer 428

Each of them decreases

Answer 429

Copper increases and germanium decreases

Answer 430

Each of them increases

Answer 431

Major carrier is mobile negative ions

Answer 432

Major carrier is mobile holes

Answer 433

Major current carrier is electrons

Answer 434

The number of mobile holes exceeds the number of acceptors

Answer 435

The valence band is partially empty and the conduction band is partially filled

Answer 436

The valence band is completely filled

Answer 437

The conduction band is completely empty

Answer 438

The valence band is completely filled and the conduction band is partially filled

Answer 439

any of above

Answer 440

n-type conductor

Answer 441

n-type semiconductor

Answer 442

p-type semiconductor

Answer 443

p-type conductor

Answer 444

Diode is forward biased

Answer 445

None of these

Answer 446

Diode is neutralized

Answer 447

Diode is reverse biased

Answer 448

Young’s modulus

Answer 449

None of these

Answer 450

Shear modulus

Answer 451

Bulk modulus

Answer 452

None of these

Answer 453

Remain fixed

Answer 454

Suddenly increases

Answer 455

Decreases slowly

Answer 456

Increases slowly

Answer 457

All of above

Answer 458

Superconductors

Answer 459

Insulators

Answer 460

Semiconductors

Answer 461

Crystal lattice

Answer 462

All of these

Answer 463

Phosphorus

Answer 464

Electrons move from base to collector

Answer 465

Holes move from emitter be base

Answer 466

Holes move from emitter to base

Answer 467

Holes move from base to emitter

Answer 468

Holes move from base to emitter

Answer 469

Holes move from emitter to base

Answer 470

Holes move from emitter to base

Answer 471

Electrons move from base to collector

Answer 472

Oscillator

Answer 473

Multivibrator

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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