Physics Electronics Online Mcqs Test

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Question 1

1. In junction diode, the holes are because of:

Answer

Extra electrons

Answer

Missing electrons

Question 2

2. In p-type semiconductor

Answer

Major carrier is mobile holes

Answer

Major carrier is mobile negative ions

Answer

The number of mobile holes exceeds the number of acceptors

Answer

Major current carrier is electrons

Question 3

3. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Remain fixed

Answer

Decreases slowly

Answer

Increases slowly

Answer

Suddenly increases

Question 4

4. Electrons present in p-type material due to thermal pair generation are

Answer

Minority carriers

Answer

Majority carriers

Answer

Dual carriers

Question 5

5. Reverse bias applied on a junction diode

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Answer

Increases the majority carrier current

Answer

Lowers the potential barrier

Question 6

6. When n-p-n transistor is used as an amplifier,

Answer

Holes move from emitter to base

Answer

Electrons move from base to collector

Answer

Holes move from base to emitter

Answer

Holes move from emitter to base

Question 7

7. Conversion of low input a.c. into high output a.c. is called:

Answer

Magnification

Answer

All of these

Answer

Amplification

Answer

Rectification

Question 8

8. n-type germanium is obtained on doping intrinsic germanium with

Answer

Phosphorus

Question 9

9. Transistors with various combinations are widely used as switches in:

Answer

Transformers

Answer

Electric motors

Answer

Electric generations

Question 10

10. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increase its life

Answer

Increases its electrical conductivity

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical resistivity

Question 11

11. The electrons in the outermost shell of an atom are called

Answer

Free electrons

Answer

Valence electrons

Answer

Tightly bound electrons

Answer

None of these

Question 12

12. Light emitting diode work when it is

Answer

Reverse biased

Answer

None of these

Answer

Forward biases

Question 13

13. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 14

14. In the transistor schematic symbol, the arrow

Answer

Point from north to south

Answer

Is locate on the collector

Answer

Is located on the base

Answer

Is located on the emitter

Question 15

15. Acceptor and donor impurities donate

Answer

p-carriers only

Answer

p-carriers and n-carriers respectively

Answer

n-carriers and p-carriers respectively

Answer

n-carriers only

Question 16

16. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 17

17. Symbol represents

Question 18

18. The potential difference across the depletion region of silicon is

Question 19

19. The part of a transistor, which is heavily doped to produce a large number of majority carriers, is

Answer

None of these

Question 20

20. When the output of OR gate is 1

Answer

If both inputs are zero

Answer

If either or both inputs are 1

Answer

If either input is zero

Answer

Only if both inputs are 1

Question 21

21. When boron is added as an impurity to silicon, the resulting material is:

Answer

p-type conductor

Answer

n-type semiconductor

Answer

n-type conductor

Answer

p-type semiconductor

Question 22

22. The semiconductor diode can be used as a rectifier because _

Answer

It has low resistance to the current flow when forward biased

Answer

Its conductivity increases with rise of temperature

Answer

It has high resistance to the current flow when reverse biased

Answer

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Question 23

23. Barrier potential of a p-n junction diode does not depend on:

Answer

Doping density

Answer

Diode design

Answer

Forward bias

Answer

Temperature

Question 24

24. Due to high loop gain of the amplifier, the inverting and non-inverting inputs are

Answer

Inverting terminal is at high potential

Answer

Both are at the high potential

Answer

Both are at the same potential

Answer

Non-inverting terminal is at high potential

Question 25

25. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 26

26. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 27

27. When a strength changes the length of a body, it is called

Answer

Shear stress

Answer

Compress ional stress

Answer

None of these

Answer

Tensile stress

Question 28

28. The whole structure obtained by the repetition of unit cell is known as

Answer

Crystal lattice

Answer

All of these

Question 29

29. A NAND gate has:

Answer

LOW inputs and a LOW output

Answer

HIGH inputs and a HIGH output

Answer

None of these

Answer

LOW inputs and a HIGH output

Question 30

30. The electrical circuit used to have smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 31

31. The forward resistance of the diode is

Answer

None of these

Question 32

32. In a junction diode, the holes are due to

Answer

Extra electrons

Answer

Missing of electrons

Question 33

33. Zener breakdown in a semiconductor diode occurs when

Answer

Reverse bias exceeds certain value

Answer

Forward bias exceeds certain value

Answer

Forward current exceeds certain value

Answer

Potential barrier is reduced to zero

Question 34

34. In p – n junction, after diffusion, a charge less region is formed around the junction is called

Answer

Charged region

Answer

Diffusion region

Answer

Depletion region

Answer

None of these

Question 35

35. The operation of a transistor requires

Answer

That the emitter be heated

Answer

That the base be heated

Answer

None of these

Answer

That the collector be heated

Question 36

36. The least doped region in a transistor is

Answer

Either emitter or collector

Question 37

37. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 38

38. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of both increases

Answer

Resistance of both decreases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of copper decreases while that of germanium increases

Question 39

39. A n-p-n transistor conducts when

Answer

Collector is positive and emitter is at negative potential as the base

Answer

Both collector and emitter are negative with respect to the base

Answer

Collector is positive and emitter is negative with respect to the base

Answer

Both collector and emitter are positive with respect to the base

Question 40

40. Arsenic, antimony or phosphorus are impurities of

Answer

None of these

Answer

may be p-type or n-type

Question 41

41. When an alternating accelerating field is applied to a charge it produces

Answer

Transverse Waves

Answer

Electromagnetic Waves

Answer

Gamma Rays

Question 42

42. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 43

43. At room temperature, a p-type semi-conductor has

Answer

Large number of holes and few electrons

Answer

Large number of holes and electrons

Answer

Large number of free electrons and few holes

Answer

Equal number of free electrons and holes

Question 44

44. Identify the correct statement about minority carriers

Answer

Free electrons in n-type and p-type

Answer

Free electrons in n-type and holes in p-type

Answer

Holes in n-type and p-type

Answer

Holes in n-type and free electrons in p-type

Question 45

45. In a semiconductor, the mobility of holes is

Answer

Greater than electrons

Answer

Equal to electrons

Answer

Less than electrons

Question 46

46. When arsenic is added as an impurity to silicon, the resulting material is

Answer

P-type semiconductor

Answer

None of these

Answer

N-type conductor

Answer

N-type semiconductor

Question 47

47. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 48

48. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 49

49. The width of a depletion layer in a p-n junction is

Answer

Increased by forward biasing

Answer

Decreased by reverse biasing

Answer

Is independent of voltage

Answer

Increased by reverse biasing

Question 50

50. The units of modulus of elasticity are same as that of

Answer

None of these

Question 51

51. The p-n junction diode works as insulator, if connected

Answer

In reverse bias

Answer

In forward bias

Answer

None of these

Question 52

52. In a P-type semiconductor

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are mobile holes

Answer

Major current carriers are electrons

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Question 53

53. The part of a transistor which is heavily doped to produce large number of majority carriers is

Answer

Any of the above depending on nature of transistor

Question 54

54. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Electrons and holes

Answer

Electrons and protons

Answer

Holes and electrons

Answer

Protons and electrons

Question 55

55. Due to the break down the p-n junction suffers

Answer

Works efficiently

Answer

None of these

Answer

Require more current

Question 56

56. In a p-type semiconductor germanium is doped with:

Answer

All of above

Question 57

57. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

n-type conductor

Answer

p-type conductor

Answer

p-type semiconductor

Question 58

58. n-type semiconductor if formed

Answer

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer

From pure Ge crystal

Answer

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer

From pure Si crystal

Question 59

59. In Germanium crystal, impurity donor elements have valiancy

Question 60

60. Application of photodiode is/are

Answer

None of these

Answer

Automatic switching

Answer

Detection of visible and invisible radiations

Answer

Logic gates

Question 61

61. The materials in which valence band and conduction band overlap are called

Answer

Semiconductors

Answer

Conductors

Answer

Superconductors

Answer

Insulators

Question 62

62. In insulators

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Question 63

63. In a PN junction

Answer

Undetermined

Answer

High potential at P side and low potential at N side

Answer

P and N both are at same potential

Answer

High potential at N side and low potential at P side

Question 64

64. In n-type substances, the minority carriers are

Answer

None of these

Answer 179

Negative charge moves from collector to base

Answer 180

Holes move from base to collector

Answer 181

Holes move from emitter to base

Answer 182

Negative charge moves from emitter to base

Answer 183

Holes move from emitter be base

Answer 184

Holes move from base to emitter

Answer 185

Holes move from emitter to base

Answer 186

Electrons move from base to collector

Answer 187

First A and B

Answer 188

Remains constant

Answer 189

Off switch

Answer 190

The photo diodes

Answer 191

The light emitting diode

Answer 192

The switch

Answer 193

Solar cells

Answer 194

Any of above

Answer 195

Conduction band is partially filled with electrons

Answer 196

Valence band is partially filled with electrons

Answer 197

Conduction band is empty and valence band is filled with electrons

Answer 198

Conduction band is filled with electrons and valence band is empty

Answer 199

Major current carriers are mobile negative ions

Answer 200

Major current carriers are electrons

Answer 201

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 202

Major current carriers are mobile holes

Answer 203

Extra electrons

Answer 204

Missing electrons

Answer 205

Current gain

Answer 206

None of these

Answer 207

Voltage gain

Answer 208

Input resistance

Answer 209

Potential barrier in depletion layer increases

Answer 210

Diode is forward based

Answer 211

Diode is reverse biased

Answer 212

Potential barrier in depletion layer remains unchanged

Answer 213

Unit amplitude

Answer 214

Variable amplitude

Answer 215

Zero amplitude

Answer 216

Constant amplitude

Answer 217

Drift of charges

Answer 218

Both drift and diffusion of charges

Answer 219

Depends upon the nature of material

Answer 220

Diffusion of charges

Answer 221

Copper increases and germanium decreases

Answer 222

Each of them decreases

Answer 223

Each of them increases

Answer 224

Copper decreases and germanium increases

Answer 225

Common emitter configuration

Answer 226

Common base configuration

Answer 227

Common collector configuration

Answer 228

None of these

Answer 229

Each of them increases

Answer 230

Each of them decreases

Answer 231

Copper increases and germanium decreases

Answer 232

Copper decreases and germanium increases

Answer 233

Half wave rectifier

Answer 234

Full wave rectifier

Answer 235

Three diodes in common

Answer 236

Triode vacuum tube

Answer 237

Step down transformer

Answer 238

Step up transformer

Answer 239

None of these

Answer 240

None of these

Answer 241

Solvent is used

Answer 242

Capacitor is used

Answer 243

Resistor is used

Answer 244

Semiconductor

Answer 245

P-type material

Answer 246

Super conductor

Answer 247

N-type material

Answer 248

Semiconductors

Answer 249

Insulators

Answer 250

Superconductors

Answer 251

None of these

Answer 252

Semiconductor

Answer 253

A very high input impedance

Answer 254

A very low input impedance

Answer 255

None of these

Answer 256

A low output impedance

Answer 257

Remains unchanged

Answer 258

Decreases and then increases

Answer 259

The valence band is completely filled and the conduction band is partially filled

Answer 260

The valence band is partially empty and the conduction band is partially filled

Answer 261

The conduction band is completely empty

Answer 262

The valence band is completely filled

Answer 263

Low degree resistor

Answer 264

Light dependent resistance

Answer 265

None of these

Answer 266

Low degree radiations

Answer 267

Decreases and then increases

Answer 268

Remains unchanged

Answer 269

Several mega ohms

Answer 270

Under reverse bias

Answer 271

During the manufacturing process

Answer 272

When temperature varies

Answer 273

Under forward bias

Answer 274

Thickness of collector

Answer 275

Very small as compared to the thickness of emitter and collector

Answer 276

Mean of thickness of emitter and collector

Answer 277

Thickness of emitter

Answer 278

None of these

Answer 279

Semiconductor

Answer 280

None of these

Answer 281

Detection of light

Answer 282

Emission of light

Answer 283

Light display

Answer 284

Aids the input signal

Answer 285

Opposes the input signal

Answer 286

Is proportional to differential voltage gain

Answer 287

Is proportional to output current

Answer 288

Transistor

Answer 289

None of these

Answer 290

Current flows in pulses

Answer 291

Current flows in one directions

Answer 292

Only half cycle is used

Answer 293

Oscillator

Answer 294

Multivibrator

Answer 295

Semiconductor

Answer 296

None of these

Answer 297

Superconductor

Answer 298

Number of electrons and holes remains same

Answer 299

Number of holes increases while that of holes decreases

Answer 300

Number of electrons and holes increases equally

Answer 301

Number of electrons increases while that of holes decreases

Answer 302

Forbidden energy states

Answer 303

Hidden energy states

Answer 304

None of these

Answer 305

Band levels

Answer 306

Potential is zero

Answer 307

Electric field is zero

Answer 308

Potential is maximum

Answer 309

Electric field is maximum

Answer 310

Nanosecond

Answer 311

Microsecond

Answer 312

None of these

Answer 313

Millisecond

Answer 314

Potential is maximum

Answer 315

Electric field is maximum

Answer 316

Electric field is zero

Answer 317

Potential is zero

Answer 318

Tetravalent

Answer 319

Pentavalent

Answer 320

Phosphorus

Answer 321

Light energy

Answer 322

Chemical energy

Answer 323

Heat energy

Answer 324

None of these

Answer 325

It offers a very low open loop gain all of above

Answer 326

It offers a very high inputs resistance to the input current

Answer 327

It offers a very low output resistance

Answer 328

None of these

Answer 329

None of these

Answer 330

Young’s modulus

Answer 331

Bulk’s modulus

Answer 332

Modulus of electricity

Answer 333

Reversed biased

Answer 334

None of these

Answer 335

Zero biased

Answer 336

Forward biased

Answer 337

Both junctions are forward biased

Answer 338

No bias voltages are required

Answer 339

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 340

Both junctions are reverse biased

Answer 341

Slightly less than emitter current

Answer 342

Equal to emitter current

Answer 343

Any of above

Answer 344

Greater than emitter current

Answer 345

All of these

Answer 346

None of these

Answer 347

Man hundred

Answer 348

Decreased by reverse biasing

Answer 349

Is independent of voltage

Answer 350

Increased by reverse biasing

Answer 351

Increased by forward biasing

Answer 352

None of these

Answer 353

Oscillator

Answer 354

any of above

Answer 355

Polymeric solids

Answer 356

Glassy solids

Answer 357

Amorphous solids

Answer 358

Crystalline solids

Answer 359

n-type conductor

Answer 360

n-type semiconductor

Answer 361

p-type conductor

Answer 362

p-type semiconductor

Answer 363

No Phase shift

Answer 364

120° Phase shift

Answer 365

180° Phase shift

Answer 366

90° Phase shift

Answer 367

Oscillator

Answer 368

Logic gates

Answer 369

None of these

Answer 370

Positively charged

Answer 371

Negative charged

Answer 372

Enable it to Telerate higher voltage

Answer 373

Increase its life

Answer 374

Increase its electrical resistivity

Answer 375

Increase its electrical conductivity

Answer 376

Immobile ions

Answer 377

Mobile ions

Answer 378

Negative charge moves from collector to base

Answer 379

Holes move from emitter to base

Answer 380

Negative charge moves from emitter to base

Answer 381

Holes move from base to collector

Answer 382

Diode is reverse biased

Answer 383

Diode is forward biased

Answer 384

None of these

Answer 385

Diode is neutralized

Answer 386

Insulators

Answer 387

Superconductors

Answer 388

Semiconductors

Answer 389

May be in phase or not

Answer 390

Input and out signals are not in phase

Answer 391

None of these

Answer 392

Input and out signals are in phase

Answer 393

Raises the potential barrier

Answer 394

Increases the majority carrier current

Answer 395

Lowers the potential barrier

Answer 396

Increase the minority carrier current

Answer 397

Remains same

Answer 398

Not a universal gate

Answer 399

A universal gate

Answer 400

A basic gate

Answer 401

A basic universal gate

Answer 402

Electrons move from collector to base

Answer 403

Electrons move from base to emitter

Answer 404

Electrons move from emitter to base

Answer 405

Holes move from base to emitter

Answer 406

Greater than one

Answer 407

Equal to one

Answer 408

Less than one

Answer 409

Large number of holes and electrons

Answer 410

Large number of holes and few electrons

Answer 411

Large number of free electrons and few holes

Answer 412

Equal number of free electrons and holes

Answer 413

Four PN-junctions

Answer 414

Three PN-junctions

Answer 415

One PN-junction

Answer 416

Two PN-junctions

Answer 417

Superconductor

Answer 418

A.C. into D.C.

Answer 419

D.C. into A.C.

Answer 420

Low voltage to high voltage

Answer 421

High voltage to low voltage

Answer 422

None of these

Answer 423

Suppressing the harmonics in A.C voltage

Answer 424

Using a Coolidge tube

Answer 425

Using a transistor

Answer 426

Suppressing half wave of A.C supply by using diode

Answer 427

INVERTER gate

Answer 428

Comparator

Answer 429

Switching device

Answer 430

P-type material

Answer 431

Increase the majority carrier current

Answer 432

Lowers the potential barrier

Answer 433

Raises the potential barrier

Answer 434

Increase the minority carrier current

Answer 435

Phosphorus

Answer 436

D.C. into A.C.

Answer 437

High voltage to low voltage

Answer 438

A.C. into D.C.

Answer 439

Low voltage to high voltage

Answer 440

Oscillator

Answer 441

P-type material

Answer 442

10¯¹² cm

Answer 443

10¯⁶ cm

Answer 444

The valence band is completely filled

Answer 445

The conduction band is completely empty

Answer 446

The valence band is partially empty and the conduction band is partially filled

Answer 447

The valence band is completely filled and the conduction band is partially filled

Answer 448

91 x 10 Nm¯²

Answer 449

None of these

Answer 450

70 x 10 Nm¯²

Answer 451

110 Nm¯²

Answer 452

Non-inverting voltage at output

Answer 453

Virtual input

Answer 454

Reference voltage on the other

Answer 455

An amplifier

Answer 456

Filtering circuit

Answer 457

A rectifier

Answer 458

Bulk modulus

Answer 459

None of these

Answer 460

Shear modulus

Answer 461

Young’s modulus

Answer 462

AND gates, OR gates, and NOT gates

Answer 463

Or gates and NOT gates

Answer 464

OR gates only

Answer 465

AND gates and NOT gates

Answer 466

All inputs are HIGH

Answer 467

At least one input is HIGH

Answer 468

At least one input is LOW

Answer 469

All inputs are LOW

Answer 470

None of these

Answer 471

Almost zero

Answer 472

None of these

Answer 473

Can be any of the above three

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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