Physics Electronics Online Mcqs Test

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Question 1

1. The part of a transistor which is heavily doped to produce large number of majority carriers is

Answer

Any of the above depending on nature of transistor

Question 2

2. At room temperature, a p-type semi-conductor has

Answer

Large number of holes and few electrons

Answer

Equal number of free electrons and holes

Answer

Large number of free electrons and few holes

Answer

Large number of holes and electrons

Question 3

3. When we apply reverse bias to a junction diode, it

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Answer

Increase the majority carrier current

Answer

Raises the potential barrier

Question 4

4. The device or circuit used for conversion of A.C. into D.C. is called

Answer

Filtering circuit

Answer

A rectifier

Answer

An amplifier

Question 5

5. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 6

6. A substance which have empty conduction band is called

Answer

Semiconductor

Answer

None of these

Question 7

7. The whole structure obtained by the repetition of unit cell is known as

Answer

All of these

Answer

Crystal lattice

Question 8

8. At absolute zero, Si acts as

Answer

None of these

Question 9

9. Due to high loop gain of the amplifier, the inverting and non-inverting inputs are

Answer

Non-inverting terminal is at high potential

Answer

Inverting terminal is at high potential

Answer

Both are at the high potential

Answer

Both are at the same potential

Question 10

10. When n-type of semiconductor is heated,

Answer

Number of electrons and holes remains same

Answer

Number of holes increases while that of holes decreases

Answer

Number of electrons increases while that of holes decreases

Answer

Number of electrons and holes increases equally

Question 11

11. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 12

12. A transistor consists of

Answer

One PN-junction

Answer

Two PN-junctions

Answer

Four PN-junctions

Answer

Three PN-junctions

Question 13

13. When aluminum is added as an impurity to silicon, then resulting material is

Answer

p-type conductor

Answer

p-type semiconductor

Answer

n-type semiconductor

Answer

n-type conductor

Question 14

14. The positive sign of gain indicates that

Answer

Input and out signals are in phase

Answer

Input and out signals are not in phase

Answer

May be in phase or not

Answer

None of these

Question 15

15. Which logic gate is represented by following diagram?

Question 16

16. In forward bias the width of potential barrier

Answer

Remains same

Question 17

17. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

Band levels

Answer

Hidden energy states

Answer

Forbidden energy states

Answer

None of these

Question 18

18. When n-p-n transistor is used as an amplifier,

Answer

Holes move from emitter to base

Answer

Holes move from emitter to base

Answer

Electrons move from base to collector

Answer

Holes move from base to emitter

Question 19

19. The materials in which valence band and conduction band overlap are called

Answer

Semiconductors

Answer

Superconductors

Answer

Insulators

Answer

Conductors

Question 20

20. Semi-conductor germanium and silicon are

Answer

Tetravalent

Answer

Pentavalent

Question 21

21. A photodiode can turn its current ON and OFF in

Answer

None of these

Answer

Nanosecond

Answer

Millisecond

Answer

Microsecond

Question 22

22. Diode can work as

Answer

Multivibrator

Answer

Oscillator

Question 23

23. The number of junctions in the PNP transistor are

Question 24

24. The electrons in the outermost shell of an atom are called

Answer

None of these

Answer

Free electrons

Answer

Valence electrons

Answer

Tightly bound electrons

Question 25

25. Conversion of low input a.c. into high output a.c. is called:

Answer

Magnification

Answer

Amplification

Answer

All of these

Answer

Rectification

Question 26

26. In forward bias, the width of potential barrier in a p-n junction diode

Answer

Remains constant

Answer

First A and B

Question 27

27. The ratio β shows the

Answer

Current gain

Answer

Voltage gain

Answer

None of these

Answer

Input resistance

Question 28

28. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 29

29. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

Solar cells

Answer

The photo diodes

Answer

The switch

Answer

The light emitting diode

Question 30

30. When a p-n junction diode is reverse biased, the flow of current across the junction is mainly due to

Answer

Both drift and diffusion of charges

Answer

Diffusion of charges

Answer

Drift of charges

Answer

Depends upon the nature of material

Question 31

31. Application of photodiode is/are

Answer

None of these

Answer

Automatic switching

Answer

Detection of visible and invisible radiations

Answer

Logic gates

Question 32

32. Identify the correct statement about minority carriers

Answer

Free electrons in n-type and p-type

Answer

Holes in n-type and free electrons in p-type

Answer

Free electrons in n-type and holes in p-type

Answer

Holes in n-type and p-type

Question 33

33. When the output of OR gate is 1

Answer

If both inputs are zero

Answer

If either input is zero

Answer

Only if both inputs are 1

Answer

If either or both inputs are 1

Question 34

34. Electrons present in p-type material due to thermal pair generation are

Answer

Minority carriers

Answer

Majority carriers

Answer

Dual carriers

Question 35

35. The ratio β represents

Question 36

36. In semiconductors at a room temperature

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is completely filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Question 37

37. What input values will cause an AND logic gate to produce a HIGH output?

Answer

At least one input is LOW

Answer

All inputs are LOW

Answer

All inputs are HIGH

Answer

At least one input is HIGH

Question 38

38. The width of a depletion layer in a p-n junction is

Answer

Increased by reverse biasing

Answer

Is independent of voltage

Answer

Decreased by reverse biasing

Answer

Increased by forward biasing

Question 39

39. With negative feedback, the returning signal:

Answer

Is proportional to output current

Answer

Opposes the input signal

Answer

Aids the input signal

Answer

Is proportional to differential voltage gain

Question 40

40. Zener breakdown in a semiconductor diode occurs when

Answer

Reverse bias exceeds certain value

Answer

Forward bias exceeds certain value

Answer

Potential barrier is reduced to zero

Answer

Forward current exceeds certain value

Question 41

41. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Non-inverting voltage at output

Answer

Virtual input

Answer

Reference voltage on the other

Question 42

42. In a junction diode, the holes are due to

Answer

Extra electrons

Answer

Missing of electrons

Question 43

43. In a semiconductor, the mobility of holes is

Answer

Less than electrons

Answer

Greater than electrons

Answer

Equal to electrons

Question 44

44. LDR means:

Answer

Light dependent resistance

Answer

Low degree radiations

Answer

None of these

Answer

Low degree resistor

Question 45

45. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 46

46. Photodiode is used for

Answer

Detection of light

Answer

None of these

Answer

Emission of light

Answer

Light display

Question 47

47. The potential difference across the depletion region of silicon is

Question 48

48. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increase its life

Answer

Enable it to Telerate higher voltage

Answer

Increases its electrical conductivity

Answer

Increase its electrical resistivity

Question 49

49. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Greater than one

Answer

Less than one

Answer

Equal to one

Question 50

50. p-n junction when reversed biased acts as a

Answer

Off switch

Question 51

51. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 52

52. Output voltage in full wave rectification is not smooth. In order to have smooth output voltage

Answer

Capacitor is used

Answer

Solvent is used

Answer

None of these

Answer

Resistor is used

Question 53

53. Light emitting diode work when it is

Answer

Reverse biased

Answer

Forward biases

Answer

None of these

Question 54

54. In p-type semi-conductor, the majority charge carriers are

Question 55

55. The output will be a LOW for any case when one or more inputs are zero in a(n):

Question 56

56. In comma emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 57

57. The transistor provide good power amplification when they are used in

Answer

Common emitter configuration

Answer

None of these

Answer

Common collector configuration

Answer

Common base configuration

Question 58

58. In p-n-p transistor the collector current is

Answer

Greater than emitter current

Answer

Equal to emitter current

Answer

Any of above

Answer

Slightly less than emitter current

Question 59

59. In insulators

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Question 60

60. A pieced of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Copper decreases and germanium increases

Answer

Copper increases and germanium decreases

Answer

Each of them decreases

Answer

Each of them increases

Question 61

61. The ratio of applied stress to volumetric strain is called

Answer

Bulk modulus

Answer

None of these

Answer

Shear modulus

Answer

Young’s modulus

Question 62

62. In a n-p-n transistor:

Answer

Negative charge moves from emitter to base

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Answer

Negative charge moves from collector to base

Question 63

63. At absolute zero, Si acts as

Answer

None of these

Question 64

64. Acceptor and donor impurities donate

Answer

p-carriers and n-carriers respectively

Answer

n-carriers only

Answer

p-carriers only

Answer

n-carriers and p-carriers respectively

Answer 179

Diode design

Answer 180

Temperature

Answer 181

Doping density

Answer 182

Forward bias

Answer 183

Resistance of copper decreases while that of germanium increases

Answer 184

Resistance of both increases

Answer 185

Resistance of copper increases while that of germanium decreases

Answer 186

Resistance of both decreases

Answer 187

Raises the potential barrier

Answer 188

Increases the majority carrier current

Answer 189

Increase the minority carrier current

Answer 190

Lowers the potential barrier

Answer 191

Lowers the potential barrier

Answer 192

Raises the potential barrier

Answer 193

Increase the minority carrier current

Answer 194

Increases the majority carrier current

Answer 195

10¯¹² cm

Answer 196

10¯⁶ cm

Answer 197

High voltage to low voltage

Answer 198

Low voltage to high voltage

Answer 199

A.C. into D.C.

Answer 200

D.C. into A.C.

Answer 201

Its conductivity increases with rise of temperature

Answer 202

It has high resistance to the current flow when reverse biased

Answer 203

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 204

It has low resistance to the current flow when forward biased

Answer 205

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 206

No bias voltages are required

Answer 207

Both junctions are forward biased

Answer 208

Both junctions are reverse biased

Answer 209

Glassy solids

Answer 210

Crystalline solids

Answer 211

Polymeric solids

Answer 212

Amorphous solids

Answer 213

Oscillator

Answer 214

None of these

Answer 215

Oscillator

Answer 216

None of these

Answer 217

Can be any of the above three

Answer 218

Collector is positive and emitter is at negative potential as the base

Answer 219

Both collector and emitter are negative with respect to the base

Answer 220

Collector is positive and emitter is negative with respect to the base

Answer 221

Both collector and emitter are positive with respect to the base

Answer 222

Charged region

Answer 223

Depletion region

Answer 224

None of these

Answer 225

Diffusion region

Answer 226

Using a transistor

Answer 227

Using a Coolidge tube

Answer 228

Suppressing the harmonics in A.C voltage

Answer 229

Suppressing half wave of A.C supply by using diode

Answer 230

Diode is neutralized

Answer 231

None of these

Answer 232

Diode is reverse biased

Answer 233

Diode is forward biased

Answer 234

Semiconductor

Answer 235

None of these

Answer 236

Superconductor

Answer 237

None of these

Answer 238

Man hundred

Answer 239

Electric motors

Answer 240

Transformers

Answer 241

Electric generations

Answer 242

Insulators

Answer 243

Semiconductors

Answer 244

Superconductors

Answer 245

Modulus of electricity

Answer 246

None of these

Answer 247

Bulk’s modulus

Answer 248

Young’s modulus

Answer 249

Almost negligible

Answer 250

Only half cycle is used

Answer 251

Current flows in pulses

Answer 252

None of these

Answer 253

Current flows in one directions

Answer 254

All of above

Answer 255

Equal number of free electrons and holes

Answer 256

Large number of holes and electrons

Answer 257

Large number of holes and few electrons

Answer 258

Large number of free electrons and few holes

Answer 259

Thickness of collector

Answer 260

Thickness of emitter

Answer 261

Very small as compared to the thickness of emitter and collector

Answer 262

Mean of thickness of emitter and collector

Answer 263

Extra electrons

Answer 264

Missing electrons

Answer 265

None of these

Answer 266

may be p-type or n-type

Answer 267

Or gates and NOT gates

Answer 268

AND gates and NOT gates

Answer 269

AND gates, OR gates, and NOT gates

Answer 270

OR gates only

Answer 271

Chemical energy

Answer 272

Heat energy

Answer 273

None of these

Answer 274

Light energy

Answer 275

Either emitter or collector

Answer 276

Holes move from base to emitter

Answer 277

Electrons move from base to collector

Answer 278

Holes move from emitter be base

Answer 279

Holes move from emitter to base

Answer 280

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 281

From pure Ge crystal

Answer 282

From pure Si crystal

Answer 283

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 284

Half wave rectifier

Answer 285

Full wave rectifier

Answer 286

None of these

Answer 287

It offers a very low open loop gain all of above

Answer 288

It offers a very high inputs resistance to the input current

Answer 289

It offers a very low output resistance

Answer 290

Missing electrons

Answer 291

Extra electrons

Answer 292

Under forward bias

Answer 293

During the manufacturing process

Answer 294

When temperature varies

Answer 295

Under reverse bias

Answer 296

That the emitter be heated

Answer 297

That the base be heated

Answer 298

That the collector be heated

Answer 299

None of these

Answer 300

p-type semiconductor

Answer 301

n-type conductor

Answer 302

p-type conductor

Answer 303

n-type semiconductor

Answer 304

Is located on the emitter

Answer 305

Is located on the base

Answer 306

Is locate on the collector

Answer 307

Point from north to south

Answer 308

Almost zero

Answer 309

None of these

Answer 310

Increase its life

Answer 311

Increase its electrical resistivity

Answer 312

Enable it to Telerate higher voltage

Answer 313

Increase its electrical conductivity

Answer 314

Decreases slowly

Answer 315

Remain fixed

Answer 316

Increases slowly

Answer 317

Suddenly increases

Answer 318

None of these

Answer 319

None of these

Answer 320

Conduction band is filled with electrons and valence band is empty

Answer 321

Conduction band is partially filled with electrons

Answer 322

Conduction band is empty and valence band is filled with electrons

Answer 323

Valence band is partially filled with electrons

Answer 324

Diode is forward based

Answer 325

Diode is reverse biased

Answer 326

Potential barrier in depletion layer increases

Answer 327

Potential barrier in depletion layer remains unchanged

Answer 328

Electric field is maximum

Answer 329

Potential is maximum

Answer 330

Electric field is zero

Answer 331

Potential is zero

Answer 332

None of these

Answer 333

Positively charged

Answer 334

Negative charged

Answer 335

Any of above

Answer 336

The valence band is partially empty and the conduction band is partially filled

Answer 337

The conduction band is completely empty

Answer 338

The valence band is completely filled

Answer 339

The valence band is completely filled and the conduction band is partially filled

Answer 340

Oscillator

Answer 341

Logic gates

Answer 342

N-type conductor

Answer 343

N-type semiconductor

Answer 344

P-type semiconductor

Answer 345

None of these

Answer 346

70 x 10 Nm¯²

Answer 347

None of these

Answer 348

91 x 10 Nm¯²

Answer 349

110 Nm¯²

Answer 350

None of these

Answer 351

Require more current

Answer 352

Works efficiently

Answer 353

None of these

Answer 354

Triode vacuum tube

Answer 355

Step up transformer

Answer 356

Step down transformer

Answer 357

Three diodes in common

Answer 358

No Phase shift

Answer 359

90° Phase shift

Answer 360

120° Phase shift

Answer 361

180° Phase shift

Answer 362

Oscillator

Answer 363

Logic gates

Answer 364

Oscillator

Answer 365

P-type material

Answer 366

Superconductor

Answer 367

None of these

Answer 368

In reverse bias

Answer 369

In forward bias

Answer 370

Decreases and then increases

Answer 371

Remains unchanged

Answer 372

Negative charge moves from emitter to base

Answer 373

Negative charge moves from collector to base

Answer 374

Holes move from base to collector

Answer 375

Holes move from emitter to base

Answer 376

any of above

Answer 377

None of these

Answer 378

Shear stress

Answer 379

Compress ional stress

Answer 380

Tensile stress

Answer 381

High potential at N side and low potential at P side

Answer 382

Undetermined

Answer 383

P and N both are at same potential

Answer 384

High potential at P side and low potential at N side

Answer 385

Variable amplitude

Answer 386

Constant amplitude

Answer 387

Zero amplitude

Answer 388

Unit amplitude

Answer 389

Increased by forward biasing

Answer 390

Is independent of voltage

Answer 391

Decreased by reverse biasing

Answer 392

Increased by reverse biasing

Answer 393

Semiconductors

Answer 394

Superconductors

Answer 395

Insulators

Answer 396

Major current carriers are electrons

Answer 397

Major current carriers are mobile holes

Answer 398

Major current carriers are mobile negative ions

Answer 399

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 400

Remains unchanged

Answer 401

Decreases and then increases

Answer 402

None of these

Answer 403

Several mega ohms

Answer 404

Transistor

Answer 405

Each of them increases

Answer 406

Each of them decreases

Answer 407

Copper decreases and germanium increases

Answer 408

Copper increases and germanium decreases

Answer 409

Low voltage to high voltage

Answer 410

D.C. into A.C.

Answer 411

High voltage to low voltage

Answer 412

A.C. into D.C.

Answer 413

Major current carrier is electrons

Answer 414

Major carrier is mobile negative ions

Answer 415

The number of mobile holes exceeds the number of acceptors

Answer 416

Major carrier is mobile holes

Answer 417

Can be any of the above three

Answer 418

Semiconductor

Answer 419

N-type material

Answer 420

Super conductor

Answer 421

P-type material

Answer 422

Phosphorus

Answer 423

n-type conductor

Answer 424

n-type semiconductor

Answer 425

p-type conductor

Answer 426

p-type semiconductor

Answer 427

Electrons move from collector to base

Answer 428

Electrons move from emitter to base

Answer 429

Holes move from base to emitter

Answer 430

Electrons move from base to emitter

Answer 431

NAND gates

Answer 432

None of these

Answer 433

Major current carriers are mobile holes

Answer 434

Major current carriers are mobile negative ions

Answer 435

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 436

Major current carriers are electrons

Answer 437

Phosphorus

Answer 438

Forward biased

Answer 439

Reversed biased

Answer 440

None of these

Answer 441

Zero biased

Answer 442

LOW inputs and a HIGH output

Answer 443

HIGH inputs and a HIGH output

Answer 444

LOW inputs and a LOW output

Answer 445

None of these

Answer 446

Potential is zero

Answer 447

Potential is maximum

Answer 448

Electric field is maximum

Answer 449

Electric field is zero

Answer 450

Both A.C. & D.C.

Answer 451

None of these

Answer 452

All of these

Answer 453

Semiconductor

Answer 454

A universal gate

Answer 455

Not a universal gate

Answer 456

A basic universal gate

Answer 457

A basic gate

Answer 458

Protons and electrons

Answer 459

Electrons and holes

Answer 460

Holes and electrons

Answer 461

Electrons and protons

Answer 462

Phosphorus

Answer 463

Comparator

Answer 464

INVERTER gate

Answer 465

Switching device

Answer 466

P-type material

Answer 467

Transverse Waves

Answer 468

Electromagnetic Waves

Answer 469

Gamma Rays

Answer 470

A low output impedance

Answer 471

A very high input impedance

Answer 472

A very low input impedance

Answer 473

None of these

Total Questions:	177
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Total Marks:	177
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