Physics Electronics Online Mcqs Test

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Question 1

1. The gain A of the amplifier is of the order of

Answer

Man hundred

Answer

None of these

Question 2

2. When arsenic is added as an impurity to silicon, the resulting material is

Answer

N-type conductor

Answer

N-type semiconductor

Answer

P-type semiconductor

Answer

None of these

Question 3

3. The units of modulus of elasticity are same as that of

Answer

None of these

Question 4

4. In the transistor schematic symbol, the arrow

Answer

Is locate on the collector

Answer

Point from north to south

Answer

Is located on the emitter

Answer

Is located on the base

Question 5

5. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Zero amplitude

Answer

Variable amplitude

Answer

Constant amplitude

Answer

Unit amplitude

Question 6

6. The potential difference across the depletion region of silicon is

Question 7

7. In a semiconductor, the mobility of holes is

Answer

Less than electrons

Answer

Equal to electrons

Answer

Greater than electrons

Question 8

8. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 9

9. At room temperature, a p-type semi-conductor has

Answer

Large number of holes and electrons

Answer

Large number of free electrons and few holes

Answer

Large number of holes and few electrons

Answer

Equal number of free electrons and holes

Question 10

10. Electrons present in p-type material due to thermal pair generation are

Answer

Dual carriers

Answer

Minority carriers

Answer

Majority carriers

Question 11

11. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

The photo diodes

Answer

Solar cells

Answer

The light emitting diode

Answer

The switch

Question 12

12. In a n-p-n transistor:

Answer

Negative charge moves from emitter to base

Answer

Holes move from emitter to base

Answer

Holes move from base to collector

Answer

Negative charge moves from collector to base

Question 13

13. When an alternating accelerating field is applied to a charge it produces

Answer

Electromagnetic Waves

Answer

Transverse Waves

Answer

Gamma Rays

Question 14

14. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Potential is maximum

Answer

Electric field is maximum

Answer

Potential is zero

Answer

Electric field is zero

Question 15

15. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 16

16. Non-inverting amplifier circuits have

Answer

A low output impedance

Answer

A very high input impedance

Answer

None of these

Answer

A very low input impedance

Question 17

17. Which is normal used of transistor?

Answer

Switching device

Answer

P-type material

Question 18

18. The semiconductor diode can be used as a rectifier because _

Answer

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer

Its conductivity increases with rise of temperature

Answer

It has high resistance to the current flow when reverse biased

Answer

It has low resistance to the current flow when forward biased

Question 19

19. When we apply reverse bias to a junction diode, it

Answer

Lowers the potential barrier

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Answer

Increase the majority carrier current

Question 20

20. In forward bias the width of potential barrier

Answer

Remains same

Question 21

21. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 22

22. The energy band gap is maximum in

Answer

Superconductors

Answer

Insulators

Answer

Semiconductors

Question 23

23. The switch is open when the resistance between C and E becomes

Answer

Almost zero

Answer

None of these

Question 24

24. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 25

25. A substance which have empty conduction band is called

Answer

None of these

Answer

Semiconductor

Question 26

26. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 27

27. In a P-type semiconductor

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are mobile holes

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Question 28

28. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 29

29. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type conductor

Answer

p-type semiconductor

Answer

p-type conductor

Answer

n-type semiconductor

Question 30

30. The working of transistor as amplifier is similar to

Answer

Triode vacuum tube

Answer

Step down transformer

Answer

Step up transformer

Answer

Three diodes in common

Question 31

31. When boron is added as an impurity to silicon, the resulting material is:

Answer

n-type semiconductor

Answer

p-type semiconductor

Answer

p-type conductor

Answer

n-type conductor

Question 32

32. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 33

33. In n-type substances, the minority carriers are

Answer

None of these

Question 34

34. Semi-conductors with donor atoms and free electrons belong to the type

Answer

any of above

Question 35

35. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Diode is reverse biased

Answer

Potential barrier in depletion layer increases

Answer

Potential barrier in depletion layer remains unchanged

Answer

Diode is forward based

Question 36

36. Reverse bias applied on a junction diode

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Answer

Increases the majority carrier current

Question 37

37. In semiconductors at a room temperature

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Question 38

38. Symbol represents

Question 39

39. N-type crystal is

Answer

Negative charged

Answer

Positively charged

Answer

None of these

Question 40

40. The ratio β represents

Question 41

41. Photodiode is used for

Answer

Emission of light

Answer

Light display

Answer

Detection of light

Answer

None of these

Question 42

42. LDR means:

Answer

Light dependent resistance

Answer

Low degree radiations

Answer

None of these

Answer

Low degree resistor

Question 43

43. Arsenic, antimony or phosphorus are impurities of

Answer

may be p-type or n-type

Answer

None of these

Question 44

44. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

Hidden energy states

Answer

Forbidden energy states

Answer

Band levels

Answer

None of these

Question 45

45. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Forward biased

Answer

Zero biased

Answer

Reversed biased

Answer

None of these

Question 46

46. In a p-type semiconductor germanium is doped with:

Answer

All of these

Question 47

47. In p-type semiconductor

Answer

Major carrier is mobile holes

Answer

Major current carrier is electrons

Answer

The number of mobile holes exceeds the number of acceptors

Answer

Major carrier is mobile negative ions

Question 48

48. In insulators

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence band is empty

Question 49

49. In a n-p-n transistor:

Answer

Negative charge moves from emitter to base

Answer

Holes move from emitter to base

Answer

Holes move from base to collector

Answer

Negative charge moves from collector to base

Question 50

50. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Electrons and holes

Answer

Protons and electrons

Answer

Holes and electrons

Answer

Electrons and protons

Question 51

51. In half wave rectification

Answer

Current flows in pulses

Answer

Current flows in one directions

Answer

None of these

Answer

Only half cycle is used

Question 52

52. In n-p-n transistor, p works as

Answer

Any of above

Question 53

53. When a strength changes the length of a body, it is called

Answer

None of these

Answer

Compress ional stress

Answer

Tensile stress

Answer

Shear stress

Question 54

54. When n-p-n transistor is used as an amplifier,

Answer

Electrons move from base to collector

Answer

Holes move from emitter to base

Answer

Holes move from base to emitter

Answer

Holes move from emitter to base

Question 55

55. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 56

56. The thickness of the base is equal to

Answer

Thickness of collector

Answer

Very small as compared to the thickness of emitter and collector

Answer

Thickness of emitter

Answer

Mean of thickness of emitter and collector

Question 57

57. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 58

58. The part of a transistor, which is heavily doped to produce a large number of majority carriers, is

Answer

None of these

Question 59

59. In a p-type semiconductor germanium is doped with:

Answer

All of above

Question 60

60. Acceptor and donor impurities donate

Answer

n-carriers and p-carriers respectively

Answer

p-carriers only

Answer

p-carriers and n-carriers respectively

Answer

n-carriers only

Question 61

61. Which one is forward bias?

Question 62

62. Transistor can be used as

Answer

Full wave rectifier

Answer

Half wave rectifier

Question 63

63. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 64

64. Photovoltaic cell produces electrical energy from

Answer

Heat energy

Answer

Light energy

Answer

None of these

Answer

Chemical energy

Answer 171

Electric motors

Answer 172

Transformers

Answer 173

Electric generations

Answer 174

Greater than one

Answer 175

Less than one

Answer 176

Equal to one

Answer 177

Transistor

Answer 178

Glassy solids

Answer 179

Crystalline solids

Answer 180

Amorphous solids

Answer 181

Polymeric solids

Answer 182

Semiconductors

Answer 183

Superconductors

Answer 184

Conductors

Answer 185

Insulators

Answer 186

Either emitter or collector

Answer 187

Electrons move from collector to base

Answer 188

Electrons move from emitter to base

Answer 189

Holes move from base to emitter

Answer 190

Electrons move from base to emitter

Answer 191

Holes in n-type and p-type

Answer 192

Free electrons in n-type and p-type

Answer 193

Free electrons in n-type and holes in p-type

Answer 194

Holes in n-type and free electrons in p-type

Answer 195

None of these

Answer 196

May be in phase or not

Answer 197

Input and out signals are in phase

Answer 198

Input and out signals are not in phase

Answer 199

Phosphorus

Answer 200

An amplifier

Answer 201

Filtering circuit

Answer 202

A rectifier

Answer 203

Logic gates

Answer 204

Automatic switching

Answer 205

Detection of visible and invisible radiations

Answer 206

None of these

Answer 207

Several mega ohms

Answer 208

Reverse biased

Answer 209

None of these

Answer 210

Forward biases

Answer 211

p-type semiconductor

Answer 212

p-type conductor

Answer 213

n-type conductor

Answer 214

n-type semiconductor

Answer 215

Off switch

Answer 216

None of these

Answer 217

Decreases and then increases

Answer 218

Remains unchanged

Answer 219

A universal gate

Answer 220

Not a universal gate

Answer 221

A basic gate

Answer 222

A basic universal gate

Answer 223

Low voltage to high voltage

Answer 224

High voltage to low voltage

Answer 225

A.C. into D.C.

Answer 226

D.C. into A.C.

Answer 227

Phosphorus

Answer 228

Doping density

Answer 229

Diode design

Answer 230

Forward bias

Answer 231

Temperature

Answer 232

Non-inverting voltage at output

Answer 233

Reference voltage on the other

Answer 234

Virtual input

Answer 235

Equal to emitter current

Answer 236

Any of above

Answer 237

Greater than emitter current

Answer 238

Slightly less than emitter current

Answer 239

Potential barrier is reduced to zero

Answer 240

Reverse bias exceeds certain value

Answer 241

Forward bias exceeds certain value

Answer 242

Forward current exceeds certain value

Answer 243

None of these

Answer 244

Current gain

Answer 245

Input resistance

Answer 246

Voltage gain

Answer 247

None of these

Answer 248

In forward bias

Answer 249

In reverse bias

Answer 250

Remain fixed

Answer 251

Decreases slowly

Answer 252

Increases slowly

Answer 253

Suddenly increases

Answer 254

If both inputs are zero

Answer 255

If either or both inputs are 1

Answer 256

If either input is zero

Answer 257

Only if both inputs are 1

Answer 258

AND gates, OR gates, and NOT gates

Answer 259

OR gates only

Answer 260

Or gates and NOT gates

Answer 261

AND gates and NOT gates

Answer 262

Increased by forward biasing

Answer 263

Increased by reverse biasing

Answer 264

Is independent of voltage

Answer 265

Decreased by reverse biasing

Answer 266

Both collector and emitter are positive with respect to the base

Answer 267

Collector is positive and emitter is at negative potential as the base

Answer 268

Collector is positive and emitter is negative with respect to the base

Answer 269

Both collector and emitter are negative with respect to the base

Answer 270

Both junctions are forward biased

Answer 271

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 272

No bias voltages are required

Answer 273

Both junctions are reverse biased

Answer 274

None of these

Answer 275

None of these

Answer 276

Superconductor

Answer 277

Semiconductor

Answer 278

Holes move from base to emitter

Answer 279

Electrons move from base to collector

Answer 280

Holes move from emitter to base

Answer 281

Holes move from emitter be base

Answer 282

10¯¹² cm

Answer 283

10¯⁶ cm

Answer 284

Semiconductors

Answer 285

Insulators

Answer 286

Superconductors

Answer 287

Common base configuration

Answer 288

Common collector configuration

Answer 289

None of these

Answer 290

Common emitter configuration

Answer 291

Resistor is used

Answer 292

Solvent is used

Answer 293

Capacitor is used

Answer 294

None of these

Answer 295

Microsecond

Answer 296

Nanosecond

Answer 297

Millisecond

Answer 298

None of these

Answer 299

When temperature varies

Answer 300

Under forward bias

Answer 301

Under reverse bias

Answer 302

During the manufacturing process

Answer 303

Large number of holes and electrons

Answer 304

Large number of free electrons and few holes

Answer 305

Equal number of free electrons and holes

Answer 306

Large number of holes and few electrons

Answer 307

Copper decreases and germanium increases

Answer 308

Copper increases and germanium decreases

Answer 309

Each of them increases

Answer 310

Each of them decreases

Answer 311

Bulk’s modulus

Answer 312

None of these

Answer 313

Young’s modulus

Answer 314

Modulus of electricity

Answer 315

Require more current

Answer 316

Works efficiently

Answer 317

None of these

Answer 318

None of these

Answer 319

Drift of charges

Answer 320

Both drift and diffusion of charges

Answer 321

Depends upon the nature of material

Answer 322

Diffusion of charges

Answer 323

Copper increases and germanium decreases

Answer 324

Each of them decreases

Answer 325

Each of them increases

Answer 326

Copper decreases and germanium increases

Answer 327

Charged region

Answer 328

None of these

Answer 329

Diffusion region

Answer 330

Depletion region

Answer 331

Oscillator

Answer 332

P-type material

Answer 333

Resistance of copper decreases while that of germanium increases

Answer 334

Resistance of both decreases

Answer 335

Resistance of both increases

Answer 336

Resistance of copper increases while that of germanium decreases

Answer 337

Oscillator

Answer 338

Multivibrator

Answer 339

NAND gates

Answer 340

High potential at P side and low potential at N side

Answer 341

P and N both are at same potential

Answer 342

Undetermined

Answer 343

High potential at N side and low potential at P side

Answer 344

None of these

Answer 345

Missing electrons

Answer 346

Extra electrons

Answer 347

LOW inputs and a HIGH output

Answer 348

HIGH inputs and a HIGH output

Answer 349

None of these

Answer 350

LOW inputs and a LOW output

Answer 351

Any of the above depending on nature of transistor

Answer 352

Extra electrons

Answer 353

Missing electrons

Answer 354

Extra electrons

Answer 355

Missing of electrons

Answer 356

Three PN-junctions

Answer 357

Four PN-junctions

Answer 358

Two PN-junctions

Answer 359

One PN-junction

Answer 360

Decreased by reverse biasing

Answer 361

Is independent of voltage

Answer 362

Increased by forward biasing

Answer 363

Increased by reverse biasing

Answer 364

Super conductor

Answer 365

N-type material

Answer 366

P-type material

Answer 367

Semiconductor

Answer 368

Crystal lattice

Answer 369

All of these

Answer 370

Increase its electrical resistivity

Answer 371

Increase its life

Answer 372

Enable it to Telerate higher voltage

Answer 373

Increase its electrical conductivity

Answer 374

The valence band is completely filled

Answer 375

The valence band is completely filled and the conduction band is partially filled

Answer 376

The conduction band is completely empty

Answer 377

The valence band is partially empty and the conduction band is partially filled

Answer 378

Conduction band is empty and valence band is filled with electrons

Answer 379

Valence band is partially filled with electrons

Answer 380

Conduction band is filled with electrons and valence bad is empty

Answer 381

Conduction band is partially filled with electrons

Answer 382

None of these

Answer 383

It offers a very low output resistance

Answer 384

It offers a very low open loop gain all of above

Answer 385

It offers a very high inputs resistance to the input current

Answer 386

Diode is forward biased

Answer 387

Diode is neutralized

Answer 388

Diode is reverse biased

Answer 389

None of these

Answer 390

Pentavalent

Answer 391

Tetravalent

Answer 392

None of these

Answer 393

Free electrons

Answer 394

Valence electrons

Answer 395

Tightly bound electrons

Answer 396

Number of electrons increases while that of holes decreases

Answer 397

Number of electrons and holes increases equally

Answer 398

Number of electrons and holes remains same

Answer 399

Number of holes increases while that of holes decreases

Answer 400

All of these

Answer 401

Magnification

Answer 402

Amplification

Answer 403

Rectification

Answer 404

Opposes the input signal

Answer 405

Is proportional to output current

Answer 406

Is proportional to differential voltage gain

Answer 407

Aids the input signal

Answer 408

180° Phase shift

Answer 409

90° Phase shift

Answer 410

120° Phase shift

Answer 411

No Phase shift

Answer 412

Logic gates

Answer 413

Oscillator

Answer 414

Semiconductor

Answer 415

Comparator

Answer 416

INVERTER gate

Answer 417

That the collector be heated

Answer 418

None of these

Answer 419

That the base be heated

Answer 420

That the emitter be heated

Answer 421

Young’s modulus

Answer 422

None of these

Answer 423

Bulk modulus

Answer 424

Shear modulus

Answer 425

Major current carriers are mobile negative ions

Answer 426

Major current carriers are mobile holes

Answer 427

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 428

Major current carriers are electrons

Answer 429

Oscillator

Answer 430

Logic gates

Answer 431

None of these

Answer 432

High voltage to low voltage

Answer 433

Low voltage to high voltage

Answer 434

D.C. into A.C.

Answer 435

A.C. into D.C.

Answer 436

From pure Si crystal

Answer 437

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 438

From pure Ge crystal

Answer 439

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 440

Both are at the same potential

Answer 441

Inverting terminal is at high potential

Answer 442

Both are at the high potential

Answer 443

Non-inverting terminal is at high potential

Answer 444

Suppressing half wave of A.C supply by using diode

Answer 445

Suppressing the harmonics in A.C voltage

Answer 446

Using a Coolidge tube

Answer 447

Using a transistor

Answer 448

Enable it to Telerate higher voltage

Answer 449

Increase its life

Answer 450

Increases its electrical conductivity

Answer 451

Increase its electrical resistivity

Answer 452

Remains constant

Answer 453

First A and B

Answer 454

Phosphorus

Answer 455

None of these

Answer 456

91 x 10 Nm¯²

Answer 457

110 Nm¯²

Answer 458

70 x 10 Nm¯²

Answer 459

Raises the potential barrier

Answer 460

Increases the majority carrier current

Answer 461

Increase the minority carrier current

Answer 462

Lowers the potential barrier

Answer 463

All inputs are HIGH

Answer 464

At least one input is HIGH

Answer 465

At least one input is LOW

Answer 466

All inputs are LOW

Answer 467

Potential is maximum

Answer 468

Electric field is zero

Answer 469

Electric field is maximum

Answer 470

Potential is zero

Answer 471

Remains unchanged

Answer 472

Decreases and then increases

Answer 473

Superconductor

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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