Physics Electronics Online Mcqs Test

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Question 1

1. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 2

2. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 3

3. The number of junctions in the PNP transistor are

Question 4

4. A photodiode can turn its current ON and OFF in

Answer

Microsecond

Answer

None of these

Answer

Nanosecond

Answer

Millisecond

Question 5

5. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 6

6. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Electrons and holes

Answer

Protons and electrons

Answer

Electrons and protons

Answer

Holes and electrons

Question 7

7. In a n-p-n transistor:

Answer

Negative charge moves from collector to base

Answer

Holes move from base to collector

Answer

Negative charge moves from emitter to base

Answer

Holes move from emitter to base

Question 8

8. The output will be a LOW for any case when one or more inputs are zero in a(n):

Question 9

9. In p – n junction, after diffusion, a charge less region is formed around the junction is called

Answer

Depletion region

Answer

Charged region

Answer

Diffusion region

Answer

None of these

Question 10

10. In n-p-n transistor, p works as

Answer

Any of above

Question 11

11. In a semiconductor, the mobility of holes is

Answer

Greater than electrons

Answer

Less than electrons

Answer

Equal to electrons

Question 12

12. The p-n junction diode works as insulator, if connected

Answer

None of these

Answer

In reverse bias

Answer

In forward bias

Question 13

13. The whole structure obtained by the repetition of unit cell is known as

Answer

Crystal lattice

Answer

All of these

Question 14

14. Photodiode is used for

Answer

Detection of light

Answer

Emission of light

Answer

Light display

Answer

None of these

Question 15

15. At room temperature, a p-type semi-conductor has

Answer

Large number of holes and few electrons

Answer

Large number of holes and electrons

Answer

Equal number of free electrons and holes

Answer

Large number of free electrons and few holes

Question 16

16. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type conductor

Answer

p-type conductor

Answer

p-type semiconductor

Answer

n-type semiconductor

Question 17

17. In a P-type semiconductor

Answer

Major current carriers are mobile holes

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are electrons

Question 18

18. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 19

19. Application of photodiode is/are

Answer

Automatic switching

Answer

Logic gates

Answer

Detection of visible and invisible radiations

Answer

None of these

Question 20

20. The part of a transistor, which is heavily doped to produce a large number of majority carriers, is

Answer

None of these

Question 21

21. In half wave rectification

Answer

Current flows in pulses

Answer

Only half cycle is used

Answer

Current flows in one directions

Answer

None of these

Question 22

22. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Potential is maximum

Answer

Potential is zero

Answer

Electric field is maximum

Answer

Electric field is zero

Question 23

23. In forward bias, the width of potential barrier in a p-n junction diode

Answer

First A and B

Answer

Remains constant

Question 24

24. The gain A of the amplifier is of the order of

Answer

Man hundred

Answer

None of these

Question 25

25. The ratio of tensile stress to tensile strain is called

Answer

None of these

Answer

Bulk’s modulus

Answer

Modulus of electricity

Answer

Young’s modulus

Question 26

26. In a P-type semiconductor

Answer

Major current carriers are mobile holes

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile negative ions

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Question 27

27. Transistors with various combinations are widely used as switches in:

Answer

Electric motors

Answer

Transformers

Answer

Electric generations

Question 28

28. The electrical circuit used to bet smooth DC output from a rectifier circuit is called

Answer

Oscillator

Answer

Logic gates

Question 29

29. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Increase its life

Answer

Increase its electrical resistivity

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical conductivity

Question 30

30. Symbol represents

Question 31

31. Non-inverting amplifier circuits have

Answer

A very low input impedance

Answer

A very high input impedance

Answer

A low output impedance

Answer

None of these

Question 32

32. In insulators

Answer

Valence band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Question 33

33. Transistor can be used as

Answer

Half wave rectifier

Answer

Full wave rectifier

Question 34

34. In p-n-p transistor the collector current is

Answer

Equal to emitter current

Answer

Any of above

Answer

Greater than emitter current

Answer

Slightly less than emitter current

Question 35

35. LDR means:

Answer

Light dependent resistance

Answer

Low degree radiations

Answer

Low degree resistor

Answer

None of these

Question 36

36. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 37

37. The switch is open when the resistance between C and E becomes

Answer

Almost zero

Answer

None of these

Question 38

38. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

Solar cells

Answer

The photo diodes

Answer

The switch

Answer

The light emitting diode

Question 39

39. Output voltage in full wave rectification is not smooth. In order to have smooth output voltage

Answer

Resistor is used

Answer

Solvent is used

Answer

Capacitor is used

Answer

None of these

Question 40

40. Light emitting diode work when it is

Answer

None of these

Answer

Forward biases

Answer

Reverse biased

Question 41

41. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 42

42. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 43

43. Zener breakdown in a semiconductor diode occurs when

Answer

Potential barrier is reduced to zero

Answer

Forward current exceeds certain value

Answer

Reverse bias exceeds certain value

Answer

Forward bias exceeds certain value

Question 44

44. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

None of these

Answer

Hidden energy states

Answer

Forbidden energy states

Answer

Band levels

Question 45

45. When n-p-n transistor is used as an amplifier,

Answer

Holes move from base to emitter

Answer

Electrons move from base to collector

Answer

Holes move from emitter to base

Answer

Holes move from emitter to base

Question 46

46. A p-n junction has a thickness of the order of:

Answer

10¯⁶ cm

Answer

10¯¹² cm

Question 47

47. The energy band gap is maximum in

Answer

Insulators

Answer

Superconductors

Answer

Semiconductors

Question 48

48. The operation of a transistor requires

Answer

That the collector be heated

Answer

That the emitter be heated

Answer

That the base be heated

Answer

None of these

Question 49

49. In semiconductors at a room temperature

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Question 50

50. When arsenic is added as an impurity to silicon, the resulting material is

Answer

P-type semiconductor

Answer

None of these

Answer

N-type conductor

Answer

N-type semiconductor

Question 51

51. The least doped region in a transistor is

Answer

Either emitter or collector

Question 52

52. n-type semiconductor if formed

Answer

From pure Si crystal

Answer

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer

From pure Ge crystal

Answer

When a Ge crystal is doped with an impurity containing 3 valence electrons

Question 53

53. Which of the following is not characteristic of an op—amp

Answer

It offers a very low open loop gain all of above

Answer

None of these

Answer

It offers a very low output resistance

Answer

It offers a very high inputs resistance to the input current

Question 54

54. When NPN transistor is used as an amplifier

Answer

Electrons move from emitter to base

Answer

Holes move from base to emitter

Answer

Electrons move from base to emitter

Answer

Electrons move from collector to base

Question 55

55. When n-p-n transistor is used as an amplifier

Answer

Holes move from emitter to base

Answer

Holes move from emitter be base

Answer

Holes move from base to emitter

Answer

Electrons move from base to collector

Question 56

56. The working of transistor as amplifier is similar to

Answer

Step up transformer

Answer

Triode vacuum tube

Answer

Step down transformer

Answer

Three diodes in common

Question 57

57. The electrons in the outermost shell of an atom are called

Answer

Free electrons

Answer

Valence electrons

Answer

None of these

Answer

Tightly bound electrons

Question 58

58. The materials in which valence band and conduction band overlap are called

Answer

Conductors

Answer

Semiconductors

Answer

Superconductors

Answer

Insulators

Question 59

59. The forward resistance of the diode is

Answer

None of these

Question 60

60. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Zero amplitude

Answer

Constant amplitude

Answer

Variable amplitude

Answer

Unit amplitude

Question 61

61. If on increasing temperature the resistance decreases, then it is

Answer

Semiconductor

Answer

Superconductor

Answer

None of these

Question 62

62. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Enable it to Telerate higher voltage

Answer

Increases its electrical conductivity

Answer

Increase its electrical resistivity

Answer

Increase its life

Question 63

63. A pieced of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Each of them decreases

Answer

Copper increases and germanium decreases

Answer

Copper decreases and germanium increases

Answer

Each of them increases

Question 64

64. Which is normal used of transistor?

Answer

P-type material

Answer

Switching device

Answer 192

p-carriers only

Answer 193

n-carriers only

Answer 194

n-carriers and p-carriers respectively

Answer 195

p-carriers and n-carriers respectively

Answer 196

n-type semiconductor

Answer 197

n-type conductor

Answer 198

p-type conductor

Answer 199

p-type semiconductor

Answer 200

INVERTER gate

Answer 201

Comparator

Answer 202

Valence band is partially filled with electrons

Answer 203

Conduction band is empty and valence band is filled with electrons

Answer 204

Conduction band is filled with electrons and valence band is empty

Answer 205

Conduction band is partially filled with electrons

Answer 206

Tetravalent

Answer 207

Pentavalent

Answer 208

Multivibrator

Answer 209

Oscillator

Answer 210

Negative charged

Answer 211

None of these

Answer 212

Positively charged

Answer 213

Thickness of emitter

Answer 214

Mean of thickness of emitter and collector

Answer 215

Very small as compared to the thickness of emitter and collector

Answer 216

Thickness of collector

Answer 217

Increased by forward biasing

Answer 218

Increased by reverse biasing

Answer 219

Decreased by reverse biasing

Answer 220

Is independent of voltage

Answer 221

Young’s modulus

Answer 222

Shear modulus

Answer 223

Bulk modulus

Answer 224

None of these

Answer 225

Holes move from emitter to base

Answer 226

Holes move from base to collector

Answer 227

Negative charge moves from emitter to base

Answer 228

Negative charge moves from collector to base

Answer 229

Semiconductor

Answer 230

None of these

Answer 231

Major carrier is mobile negative ions

Answer 232

The number of mobile holes exceeds the number of acceptors

Answer 233

Major carrier is mobile holes

Answer 234

Major current carrier is electrons

Answer 235

It has low resistance to the current flow when forward biased

Answer 236

Its conductivity increases with rise of temperature

Answer 237

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 238

It has high resistance to the current flow when reverse biased

Answer 239

Decreases and then increases

Answer 240

Remains unchanged

Answer 241

All of these

Answer 242

Crystalline solids

Answer 243

Glassy solids

Answer 244

Amorphous solids

Answer 245

Polymeric solids

Answer 246

A basic gate

Answer 247

Not a universal gate

Answer 248

A basic universal gate

Answer 249

A universal gate

Answer 250

None of these

Answer 251

Increased by forward biasing

Answer 252

Decreased by reverse biasing

Answer 253

Increased by reverse biasing

Answer 254

Is independent of voltage

Answer 255

None of these

Answer 256

Any of the above depending on nature of transistor

Answer 257

An amplifier

Answer 258

A rectifier

Answer 259

Filtering circuit

Answer 260

If either or both inputs are 1

Answer 261

If both inputs are zero

Answer 262

Only if both inputs are 1

Answer 263

If either input is zero

Answer 264

Rectification

Answer 265

Amplification

Answer 266

Magnification

Answer 267

All of these

Answer 268

Potential barrier in depletion layer remains unchanged

Answer 269

Diode is forward based

Answer 270

Potential barrier in depletion layer increases

Answer 271

Diode is reverse biased

Answer 272

Free electrons in n-type and holes in p-type

Answer 273

Free electrons in n-type and p-type

Answer 274

Holes in n-type and p-type

Answer 275

Holes in n-type and free electrons in p-type

Answer 276

Tensile stress

Answer 277

None of these

Answer 278

Compress ional stress

Answer 279

Shear stress

Answer 280

Is proportional to differential voltage gain

Answer 281

Aids the input signal

Answer 282

Is proportional to output current

Answer 283

Opposes the input signal

Answer 284

Point from north to south

Answer 285

Is located on the emitter

Answer 286

Is located on the base

Answer 287

Is locate on the collector

Answer 288

Raises the potential barrier

Answer 289

Lowers the potential barrier

Answer 290

Increase the minority carrier current

Answer 291

Increases the majority carrier current

Answer 292

n-type semiconductor

Answer 293

p-type conductor

Answer 294

n-type conductor

Answer 295

p-type semiconductor

Answer 296

Remains unchanged

Answer 297

Decreases and then increases

Answer 298

None of these

Answer 299

Heat energy

Answer 300

Chemical energy

Answer 301

Light energy

Answer 302

Four PN-junctions

Answer 303

Two PN-junctions

Answer 304

One PN-junction

Answer 305

Three PN-junctions

Answer 306

Oscillator

Answer 307

P-type material

Answer 308

Oscillator

Answer 309

Logic gates

Answer 310

All of above

Answer 311

Extra electrons

Answer 312

Missing of electrons

Answer 313

Remains same

Answer 314

Phosphorus

Answer 315

Less than one

Answer 316

Equal to one

Answer 317

Greater than one

Answer 318

90° Phase shift

Answer 319

No Phase shift

Answer 320

180° Phase shift

Answer 321

120° Phase shift

Answer 322

During the manufacturing process

Answer 323

Under reverse bias

Answer 324

Under forward bias

Answer 325

When temperature varies

Answer 326

D.C. into A.C.

Answer 327

Low voltage to high voltage

Answer 328

A.C. into D.C.

Answer 329

High voltage to low voltage

Answer 330

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 331

No bias voltages are required

Answer 332

Both junctions are reverse biased

Answer 333

Both junctions are forward biased

Answer 334

Phosphorus

Answer 335

Almost negligible

Answer 336

None of these

Answer 337

Current gain

Answer 338

Input resistance

Answer 339

Voltage gain

Answer 340

Off switch

Answer 341

Transverse Waves

Answer 342

Electromagnetic Waves

Answer 343

Gamma Rays

Answer 344

None of these

Answer 345

Collector is positive and emitter is negative with respect to the base

Answer 346

Collector is positive and emitter is at negative potential as the base

Answer 347

Both collector and emitter are positive with respect to the base

Answer 348

Both collector and emitter are negative with respect to the base

Answer 349

None of these

Answer 350

Input and out signals are not in phase

Answer 351

Input and out signals are in phase

Answer 352

May be in phase or not

Answer 353

Superconductors

Answer 354

Insulators

Answer 355

Semiconductors

Answer 356

NAND gates

Answer 357

Superconductor

Answer 358

Reversed biased

Answer 359

None of these

Answer 360

Forward biased

Answer 361

Zero biased

Answer 362

Both are at the high potential

Answer 363

Both are at the same potential

Answer 364

Non-inverting terminal is at high potential

Answer 365

Inverting terminal is at high potential

Answer 366

Drift of charges

Answer 367

Depends upon the nature of material

Answer 368

Both drift and diffusion of charges

Answer 369

Diffusion of charges

Answer 370

Minority carriers

Answer 371

Majority carriers

Answer 372

Dual carriers

Answer 373

Extra electrons

Answer 374

Missing electrons

Answer 375

Suppressing the harmonics in A.C voltage

Answer 376

Suppressing half wave of A.C supply by using diode

Answer 377

Using a Coolidge tube

Answer 378

Using a transistor

Answer 379

Resistance of both decreases

Answer 380

Resistance of copper decreases while that of germanium increases

Answer 381

Resistance of both increases

Answer 382

Resistance of copper increases while that of germanium decreases

Answer 383

LOW inputs and a HIGH output

Answer 384

None of these

Answer 385

LOW inputs and a LOW output

Answer 386

HIGH inputs and a HIGH output

Answer 387

High voltage to low voltage

Answer 388

D.C. into A.C.

Answer 389

Low voltage to high voltage

Answer 390

A.C. into D.C.

Answer 391

may be p-type or n-type

Answer 392

None of these

Answer 393

None of these

Answer 394

Missing electrons

Answer 395

Extra electrons

Answer 396

All inputs are HIGH

Answer 397

All inputs are LOW

Answer 398

At least one input is HIGH

Answer 399

At least one input is LOW

Answer 400

Several mega ohms

Answer 401

None of these

Answer 402

Remain fixed

Answer 403

Increases slowly

Answer 404

Decreases slowly

Answer 405

Suddenly increases

Answer 406

None of these

Answer 407

Diode is forward biased

Answer 408

Diode is reverse biased

Answer 409

Diode is neutralized

Answer 410

Electric field is maximum

Answer 411

Potential is maximum

Answer 412

Potential is zero

Answer 413

Electric field is zero

Answer 414

Immobile ions

Answer 415

Mobile ions

Answer 416

P-type material

Answer 417

Super conductor

Answer 418

Semiconductor

Answer 419

N-type material

Answer 420

OR gates only

Answer 421

AND gates, OR gates, and NOT gates

Answer 422

AND gates and NOT gates

Answer 423

Or gates and NOT gates

Answer 424

Increase the minority carrier current

Answer 425

Increases the majority carrier current

Answer 426

Raises the potential barrier

Answer 427

Lowers the potential barrier

Answer 428

Phosphorus

Answer 429

Virtual input

Answer 430

Non-inverting voltage at output

Answer 431

Reference voltage on the other

Answer 432

Transistor

Answer 433

P and N both are at same potential

Answer 434

Undetermined

Answer 435

High potential at N side and low potential at P side

Answer 436

High potential at P side and low potential at N side

Answer 437

None of these

Answer 438

Require more current

Answer 439

Works efficiently

Answer 440

Number of holes increases while that of holes decreases

Answer 441

Number of electrons and holes remains same

Answer 442

Number of electrons increases while that of holes decreases

Answer 443

Number of electrons and holes increases equally

Answer 444

Large number of holes and few electrons

Answer 445

Large number of holes and electrons

Answer 446

Equal number of free electrons and holes

Answer 447

Large number of free electrons and few holes

Answer 448

Can be any of the above three

Answer 449

Raises the potential barrier

Answer 450

Increase the minority carrier current

Answer 451

Lowers the potential barrier

Answer 452

Increase the majority carrier current

Answer 453

any of above

Answer 454

The valence band is partially empty and the conduction band is partially filled

Answer 455

The conduction band is completely empty

Answer 456

The valence band is completely filled and the conduction band is partially filled

Answer 457

The valence band is completely filled

Answer 458

Copper increases and germanium decreases

Answer 459

Each of them increases

Answer 460

Each of them decreases

Answer 461

Copper decreases and germanium increases

Answer 462

70 x 10 Nm¯²

Answer 463

None of these

Answer 464

110 Nm¯²

Answer 465

91 x 10 Nm¯²

Answer 466

None of these

Answer 467

Common collector configuration

Answer 468

Common base configuration

Answer 469

Common emitter configuration

Answer 470

Doping density

Answer 471

Forward bias

Answer 472

Temperature

Answer 473

Diode design

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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