Physics Electronics Online Mcqs Test

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Question 1

1. When a strength changes the length of a body, it is called

Answer

Compress ional stress

Answer

Shear stress

Answer

None of these

Answer

Tensile stress

Question 2

2. The part of a transistor, which is heavily doped to produce a large number of majority carriers, is

Answer

None of these

Question 3

3. When n-p-n transistor is used as an amplifier

Answer

Holes move from base to emitter

Answer

Electrons move from base to collector

Answer

Holes move from emitter to base

Answer

Holes move from emitter be base

Question 4

4. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Potential is zero

Answer

Potential is maximum

Answer

Electric field is zero

Answer

Electric field is maximum

Question 5

5. The number of junctions in the PNP transistor are

Question 6

6. In p-type semi-conductor, the majority charge carriers are

Question 7

7. When aluminum is added as an impurity to silicon, then resulting material is

Answer

p-type conductor

Answer

n-type conductor

Answer

n-type semiconductor

Answer

p-type semiconductor

Question 8

8. In a PN junction

Answer

P and N both are at same potential

Answer

High potential at P side and low potential at N side

Answer

Undetermined

Answer

High potential at N side and low potential at P side

Question 9

9. In a good conductor, the energy gap between the conduction band and the valence band is

Question 10

10. In comma emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 11

11. When the conductivity of a semiconductor is only due, to breaking of covalent bonds, the semiconductor is called

Question 12

12. In reverse biasing of p-n junction, the resistance offered by the diode is of the order of

Answer

Several mega ohms

Question 13

13. Application of photodiode is/are

Answer

Detection of visible and invisible radiations

Answer

None of these

Answer

Automatic switching

Answer

Logic gates

Question 14

14. In forward bias the width of potential barrier

Answer

Remains same

Question 15

15. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 16

16. When n-p-n transistor is used as an amplifier,

Answer

Holes move from emitter to base

Answer

Electrons move from base to collector

Answer

Holes move from base to emitter

Answer

Holes move from emitter to base

Question 17

17. Conversion of low input a.c. into high output a.c. is called:

Answer

Amplification

Answer

Magnification

Answer

All of these

Answer

Rectification

Question 18

18. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 19

19. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Enable it to Telerate higher voltage

Answer

Increase its life

Answer

Increase its electrical resistivity

Answer

Increase its electrical conductivity

Question 20

20. In a semiconductor, the mobility of holes is

Answer

Greater than electrons

Answer

Less than electrons

Answer

Equal to electrons

Question 21

21. The simplest type of rectification known as half wave rectification is obtained by

Answer

Suppressing half wave of A.C supply by using diode

Answer

Using a Coolidge tube

Answer

Suppressing the harmonics in A.C voltage

Answer

Using a transistor

Question 22

22. Using OP-Amp as an inverting amplifier, the non-inverting terminal has potential

Answer

None of these

Question 23

23. When we apply reverse bias to a junction diode, it

Answer

Increase the majority carrier current

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Answer

Lowers the potential barrier

Question 24

24. When a pentavalent material like As, is added to tetravalent material l.e. Ge, we get a

Answer

N-type material

Answer

P-type material

Answer

Super conductor

Answer

Semiconductor

Question 25

25. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Potential barrier in depletion layer increases

Answer

Diode is reverse biased

Answer

Potential barrier in depletion layer remains unchanged

Answer

Diode is forward based

Question 26

26. Depletion layer consists of

Answer

Immobile ions

Answer

Mobile ions

Question 27

27. The working of transistor as amplifier is similar to

Answer

Step up transformer

Answer

Triode vacuum tube

Answer

Three diodes in common

Answer

Step down transformer

Question 28

28. A NAND gate has:

Answer

HIGH inputs and a HIGH output

Answer

LOW inputs and a HIGH output

Answer

None of these

Answer

LOW inputs and a LOW output

Question 29

29. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

None of these

Answer

Forward biased

Answer

Zero biased

Answer

Reversed biased

Question 30

30. The whole structure obtained by the repetition of unit cell is known as

Answer

All of these

Answer

Crystal lattice

Question 31

31. In insulators

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Question 32

32. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 33

33. A diode as a rectifier converts:

Answer

A.C. into D.C.

Answer

Low voltage to high voltage

Answer

D.C. into A.C.

Answer

High voltage to low voltage

Question 34

34. In p-type semiconductor

Answer

Major carrier is mobile holes

Answer

Major current carrier is electrons

Answer

The number of mobile holes exceeds the number of acceptors

Answer

Major carrier is mobile negative ions

Question 35

35. In the transistor schematic symbol, the arrow

Answer

Is located on the emitter

Answer

Point from north to south

Answer

Is located on the base

Answer

Is locate on the collector

Question 36

36. The energy band gap is maximum in

Answer

Insulators

Answer

Superconductors

Answer

Semiconductors

Question 37

37. At room temperature, a p-type semi-conductor has

Answer

Equal number of free electrons and holes

Answer

Large number of holes and few electrons

Answer

Large number of free electrons and few holes

Answer

Large number of holes and electrons

Question 38

38. The positive sign of gain indicates that

Answer

Input and out signals are in phase

Answer

Input and out signals are not in phase

Answer

None of these

Answer

May be in phase or not

Question 39

39. In n-p-n transistor, p works as

Answer

Any of above

Question 40

40. In semiconductors at a room temperature

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Question 41

41. When a p-n junction diode is reverse biased, the flow of current across the junction is mainly due to

Answer

Both drift and diffusion of charges

Answer

Diffusion of charges

Answer

Depends upon the nature of material

Answer

Drift of charges

Question 42

42. The transistor provide good power amplification when they are used in

Answer

Common base configuration

Answer

Common collector configuration

Answer

Common emitter configuration

Answer

None of these

Question 43

43. Output voltage in full wave rectification is not smooth. In order to have smooth output voltage

Answer

Capacitor is used

Answer

None of these

Answer

Solvent is used

Answer

Resistor is used

Question 44

44. The p-n junction diode works as insulator, if connected

Answer

In reverse bias

Answer

In forward bias

Answer

None of these

Question 45

45. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 46

46. In p – n junction, after diffusion, a charge less region is formed around the junction is called

Answer

Charged region

Answer

Depletion region

Answer

Diffusion region

Answer

None of these

Question 47

47. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Each of them decreases

Answer

Each of them increases

Answer

Copper increases and germanium decreases

Answer

Copper decreases and germanium increases

Question 48

48. n-type semiconductor if formed

Answer

From pure Si crystal

Answer

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer

From pure Ge crystal

Question 49

49. The critical temperature for mercury is

Question 50

50. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 51

51. The energy band gap is maximum in

Answer

Superconductors

Answer

Semiconductors

Answer

Insulators

Question 52

52. The electrons in the outermost shell of an atom are called

Answer

None of these

Answer

Valence electrons

Answer

Tightly bound electrons

Answer

Free electrons

Question 53

53. The potential difference across the depletion region of silicon is

Question 54

54. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Unit amplitude

Answer

Variable amplitude

Answer

Zero amplitude

Answer

Constant amplitude

Question 55

55. A device which converts an alternating current to direct current is called

Answer

Oscillator

Answer

P-type material

Question 56

56. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Equal to one

Answer

Greater than one

Answer

Less than one

Question 57

57. In half wave rectification

Answer

Only half cycle is used

Answer

None of these

Answer

Current flows in one directions

Answer

Current flows in pulses

Question 58

58. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increases its electrical conductivity

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical resistivity

Answer

Increase its life

Question 59

59. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Virtual input

Answer

Non-inverting voltage at output

Answer

Reference voltage on the other

Question 60

60. In Germanium crystal, impurity donor elements have valiancy

Question 61

61. In a P-type semiconductor

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile holes

Answer

Major current carriers are mobile negative ions

Answer

Major current carriers are electrons

Question 62

62. In p-n-p transistor the collector current is

Answer

Greater than emitter current

Answer

Slightly less than emitter current

Answer

Equal to emitter current

Answer

Any of above

Question 63

63. In Germanium crystal, impurity donor elements have valiancy

Question 64

64. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Answer 175

None of these

Answer 176

70 x 10 Nm¯²

Answer 177

110 Nm¯²

Answer 178

91 x 10 Nm¯²

Answer 179

Oscillator

Answer 180

Logic gates

Answer 181

Majority carriers

Answer 182

Dual carriers

Answer 183

Minority carriers

Answer 184

Increased by forward biasing

Answer 185

Is independent of voltage

Answer 186

Increased by reverse biasing

Answer 187

Decreased by reverse biasing

Answer 188

Both A.C. & D.C.

Answer 189

None of these

Answer 190

Non-inverting terminal is at high potential

Answer 191

Both are at the high potential

Answer 192

Inverting terminal is at high potential

Answer 193

Both are at the same potential

Answer 194

Electric field is maximum

Answer 195

Potential is maximum

Answer 196

Potential is zero

Answer 197

Electric field is zero

Answer 198

D.C. into A.C.

Answer 199

A.C. into D.C.

Answer 200

High voltage to low voltage

Answer 201

Low voltage to high voltage

Answer 202

The valence band is completely filled and the conduction band is partially filled

Answer 203

The conduction band is completely empty

Answer 204

The valence band is completely filled

Answer 205

The valence band is partially empty and the conduction band is partially filled

Answer 206

Under reverse bias

Answer 207

When temperature varies

Answer 208

Under forward bias

Answer 209

During the manufacturing process

Answer 210

Chemical energy

Answer 211

Heat energy

Answer 212

None of these

Answer 213

Light energy

Answer 214

Diode is reverse biased

Answer 215

Diode is neutralized

Answer 216

None of these

Answer 217

Diode is forward biased

Answer 218

Resistance of both decreases

Answer 219

Resistance of copper increases while that of germanium decreases

Answer 220

Resistance of both increases

Answer 221

Resistance of copper decreases while that of germanium increases

Answer 222

None of these

Answer 223

Require more current

Answer 224

Works efficiently

Answer 225

p-carriers and n-carriers respectively

Answer 226

n-carriers and p-carriers respectively

Answer 227

p-carriers only

Answer 228

n-carriers only

Answer 229

Reverse biased

Answer 230

None of these

Answer 231

Forward biases

Answer 232

A basic universal gate

Answer 233

A universal gate

Answer 234

A basic gate

Answer 235

Not a universal gate

Answer 236

Oscillator

Answer 237

Multivibrator

Answer 238

The photo diodes

Answer 239

The switch

Answer 240

Solar cells

Answer 241

The light emitting diode

Answer 242

Switching device

Answer 243

P-type material

Answer 244

Oscillator

Answer 245

Major current carriers are electrons

Answer 246

Major current carriers are mobile holes

Answer 247

Major current carriers are mobile negative ions

Answer 248

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 249

Semiconductor

Answer 250

None of these

Answer 251

Superconductor

Answer 252

Glassy solids

Answer 253

Polymeric solids

Answer 254

Amorphous solids

Answer 255

Crystalline solids

Answer 256

All inputs are HIGH

Answer 257

At least one input is HIGH

Answer 258

At least one input is LOW

Answer 259

All inputs are LOW

Answer 260

Pentavalent

Answer 261

Tetravalent

Answer 262

Off switch

Answer 263

Doping density

Answer 264

Temperature

Answer 265

Forward bias

Answer 266

Diode design

Answer 267

None of these

Answer 268

Full wave rectifier

Answer 269

Half wave rectifier

Answer 270

Only if both inputs are 1

Answer 271

If either or both inputs are 1

Answer 272

If both inputs are zero

Answer 273

If either input is zero

Answer 274

Modulus of electricity

Answer 275

None of these

Answer 276

Bulk’s modulus

Answer 277

Young’s modulus

Answer 278

Transverse Waves

Answer 279

Electromagnetic Waves

Answer 280

Gamma Rays

Answer 281

Increases the majority carrier current

Answer 282

Raises the potential barrier

Answer 283

Lowers the potential barrier

Answer 284

Increase the minority carrier current

Answer 285

Remains unchanged

Answer 286

Decreases and then increases

Answer 287

Large number of holes and electrons

Answer 288

Large number of free electrons and few holes

Answer 289

Large number of holes and few electrons

Answer 290

Equal number of free electrons and holes

Answer 291

Thickness of collector

Answer 292

Thickness of emitter

Answer 293

Mean of thickness of emitter and collector

Answer 294

Very small as compared to the thickness of emitter and collector

Answer 295

Conduction band is empty and valence band is filled with electrons

Answer 296

Valence band is partially filled with electrons

Answer 297

Conduction band is filled with electrons and valence band is empty

Answer 298

Conduction band is partially filled with electrons

Answer 299

None of these

Answer 300

Suddenly increases

Answer 301

Decreases slowly

Answer 302

Remain fixed

Answer 303

Increases slowly

Answer 304

Light dependent resistance

Answer 305

Low degree resistor

Answer 306

None of these

Answer 307

Low degree radiations

Answer 308

Microsecond

Answer 309

Millisecond

Answer 310

Nanosecond

Answer 311

None of these

Answer 312

Copper decreases and germanium increases

Answer 313

Copper increases and germanium decreases

Answer 314

Each of them increases

Answer 315

Each of them decreases

Answer 316

Phosphorus

Answer 317

Three PN-junctions

Answer 318

Four PN-junctions

Answer 319

Two PN-junctions

Answer 320

One PN-junction

Answer 321

Phosphorus

Answer 322

Young’s modulus

Answer 323

Bulk modulus

Answer 324

None of these

Answer 325

Shear modulus

Answer 326

10¯⁶ cm

Answer 327

10¯¹² cm

Answer 328

All of above

Answer 329

Can be any of the above three

Answer 330

Electric motors

Answer 331

Transformers

Answer 332

Electric generations

Answer 333

Negative charge moves from emitter to base

Answer 334

Holes move from base to collector

Answer 335

Holes move from emitter to base

Answer 336

Negative charge moves from collector to base

Answer 337

180° Phase shift

Answer 338

No Phase shift

Answer 339

90° Phase shift

Answer 340

120° Phase shift

Answer 341

None of these

Answer 342

Band levels

Answer 343

None of these

Answer 344

Forbidden energy states

Answer 345

Hidden energy states

Answer 346

None of these

Answer 347

Oscillator

Answer 348

None of these

Answer 349

any of above

Answer 350

Electrons and holes

Answer 351

Holes and electrons

Answer 352

Protons and electrons

Answer 353

Electrons and protons

Answer 354

Holes in n-type and free electrons in p-type

Answer 355

Free electrons in n-type and holes in p-type

Answer 356

Free electrons in n-type and p-type

Answer 357

Holes in n-type and p-type

Answer 358

Light display

Answer 359

Emission of light

Answer 360

Detection of light

Answer 361

None of these

Answer 362

None of these

Answer 363

Man hundred

Answer 364

Can be any of the above three

Answer 365

That the base be heated

Answer 366

That the emitter be heated

Answer 367

None of these

Answer 368

That the collector be heated

Answer 369

Oscillator

Answer 370

Logic gates

Answer 371

Almost zero

Answer 372

None of these

Answer 373

Lowers the potential barrier

Answer 374

Increases the majority carrier current

Answer 375

Raises the potential barrier

Answer 376

Increase the minority carrier current

Answer 377

n-type semiconductor

Answer 378

n-type conductor

Answer 379

p-type semiconductor

Answer 380

p-type conductor

Answer 381

Phosphorus

Answer 382

Electrons move from emitter to base

Answer 383

Electrons move from collector to base

Answer 384

Electrons move from base to emitter

Answer 385

Holes move from base to emitter

Answer 386

Extra electrons

Answer 387

Missing of electrons

Answer 388

It offers a very low open loop gain all of above

Answer 389

It offers a very low output resistance

Answer 390

It offers a very high inputs resistance to the input current

Answer 391

None of these

Answer 392

Decreased by reverse biasing

Answer 393

Increased by reverse biasing

Answer 394

Increased by forward biasing

Answer 395

Is independent of voltage

Answer 396

None of these

Answer 397

Decreases and then increases

Answer 398

Remains unchanged

Answer 399

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 400

Its conductivity increases with rise of temperature

Answer 401

It has high resistance to the current flow when reverse biased

Answer 402

It has low resistance to the current flow when forward biased

Answer 403

Semiconductors

Answer 404

Superconductors

Answer 405

Insulators

Answer 406

Conductors

Answer 407

Almost negligible

Answer 408

Negative charge moves from emitter to base

Answer 409

Negative charge moves from collector to base

Answer 410

Holes move from base to collector

Answer 411

Holes move from emitter to base

Answer 412

All of these

Answer 413

Missing electrons

Answer 414

Extra electrons

Answer 415

AND gates, OR gates, and NOT gates

Answer 416

AND gates and NOT gates

Answer 417

OR gates only

Answer 418

Or gates and NOT gates

Answer 419

Voltage gain

Answer 420

None of these

Answer 421

Input resistance

Answer 422

Current gain

Answer 423

Number of electrons and holes increases equally

Answer 424

Number of holes increases while that of holes decreases

Answer 425

Number of electrons increases while that of holes decreases

Answer 426

Number of electrons and holes remains same

Answer 427

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 428

Both junctions are forward biased

Answer 429

No bias voltages are required

Answer 430

Both junctions are reverse biased

Answer 431

Forward bias exceeds certain value

Answer 432

Forward current exceeds certain value

Answer 433

Potential barrier is reduced to zero

Answer 434

Reverse bias exceeds certain value

Answer 435

None of these

Answer 436

may be p-type or n-type

Answer 437

A very high input impedance

Answer 438

A low output impedance

Answer 439

None of these

Answer 440

A very low input impedance

Answer 441

First A and B

Answer 442

Remains constant

Answer 443

Phosphorus

Answer 444

Extra electrons

Answer 445

Missing electrons

Answer 446

Collector is positive and emitter is negative with respect to the base

Answer 447

Collector is positive and emitter is at negative potential as the base

Answer 448

Both collector and emitter are negative with respect to the base

Answer 449

Both collector and emitter are positive with respect to the base

Answer 450

Either emitter or collector

Answer 451

N-type conductor

Answer 452

P-type semiconductor

Answer 453

N-type semiconductor

Answer 454

None of these

Answer 455

p-type conductor

Answer 456

p-type semiconductor

Answer 457

n-type semiconductor

Answer 458

n-type conductor

Answer 459

None of these

Answer 460

Semiconductor

Answer 461

INVERTER gate

Answer 462

Comparator

Answer 463

Any of the above depending on nature of transistor

Answer 464

None of these

Answer 465

Positively charged

Answer 466

Negative charged

Answer 467

Is proportional to output current

Answer 468

Opposes the input signal

Answer 469

Is proportional to differential voltage gain

Answer 470

Aids the input signal

Answer 471

Filtering circuit

Answer 472

An amplifier

Answer 473

A rectifier

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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