Physics Electronics Online Mcqs Test

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Question 1

1. Which logic gate is represented by following diagram?

Question 2

2. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 3

3. Polythene, potystrene and nylon are examples of

Answer

Crystalline solids

Answer

Amorphous solids

Answer

Glassy solids

Answer

Polymeric solids

Question 4

4. The potential difference across the depletion region of silicon is

Question 5

5. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 6

6. In Germanium crystal, impurity donor elements have valiancy

Question 7

7. The least doped region in a transistor is

Question 8

8. Application of photodiode is/are

Answer

Detection of visible and invisible radiations

Answer

Logic gates

Answer

Automatic switching

Answer

None of these

Question 9

9. Identify the correct statement about minority carriers

Answer

Holes in n-type and free electrons in p-type

Answer

Holes in n-type and p-type

Answer

Free electrons in n-type and holes in p-type

Answer

Free electrons in n-type and p-type

Question 10

10. The energy band gap is maximum in

Answer

Superconductors

Answer

Semiconductors

Answer

Insulators

Question 11

11. The switch is open when the resistance between C and E becomes

Answer

None of these

Answer

Almost zero

Question 12

12. A NAND gate has:

Answer

None of these

Answer

LOW inputs and a LOW output

Answer

LOW inputs and a HIGH output

Answer

HIGH inputs and a HIGH output

Question 13

13. When the output of OR gate is 1

Answer

Only if both inputs are 1

Answer

If either input is zero

Answer

If either or both inputs are 1

Answer

If both inputs are zero

Question 14

14. The p-n junction diode works as insulator, if connected

Answer

In reverse bias

Answer

None of these

Answer

In forward bias

Question 15

15. Reverse bias applied on a junction diode

Answer

Increases the majority carrier current

Answer

Lowers the potential barrier

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Question 16

16. At absolute zero, Si acts as

Answer

None of these

Question 17

17. The electrical circuit used to have smooth DC output from a rectifier circuit is called

Answer

Oscillator

Answer

Logic gates

Question 18

18. Arsenic, antimony or phosphorus are impurities of

Answer

may be p-type or n-type

Answer

None of these

Question 19

19. When n-type of semiconductor is heated,

Answer

Number of electrons and holes remains same

Answer

Number of holes increases while that of holes decreases

Answer

Number of electrons and holes increases equally

Answer

Number of electrons increases while that of holes decreases

Question 20

20. Young’s modulus for copper is

Answer

110 Nm¯²

Answer

91 x 10 Nm¯²

Answer

70 x 10 Nm¯²

Answer

None of these

Question 21

21. Due to the break down the p-n junction suffers

Answer

Works efficiently

Answer

Require more current

Answer

None of these

Question 22

22. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Forward biased

Answer

Reversed biased

Answer

Zero biased

Answer

None of these

Question 23

23. Semi-conductor germanium and silicon are

Answer

Tetravalent

Answer

Pentavalent

Question 24

24. p-n junction when reversed biased acts as a

Answer

Off switch

Question 25

25. When a pentavalent material like As, is added to tetravalent material l.e. Ge, we get a

Answer

Super conductor

Answer

P-type material

Answer

N-type material

Answer

Semiconductor

Question 26

26. When an alternating accelerating field is applied to a charge it produces

Answer

Transverse Waves

Answer

Electromagnetic Waves

Answer

Gamma Rays

Question 27

27. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

AND gates and NOT gates

Answer

OR gates only

Answer

Or gates and NOT gates

Answer

AND gates, OR gates, and NOT gates

Question 28

28. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

None of these

Answer

Diode is forward biased

Answer

Diode is neutralized

Answer

Diode is reverse biased

Question 29

29. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Copper decreases and germanium increases

Answer

Each of them decreases

Answer

Copper increases and germanium decreases

Answer

Each of them increases

Question 30

30. When NPN transistor is used as an amplifier

Answer

Electrons move from base to emitter

Answer

Holes move from base to emitter

Answer

Electrons move from collector to base

Answer

Electrons move from emitter to base

Question 31

31. The thickness of the base is equal to

Answer

Mean of thickness of emitter and collector

Answer

Very small as compared to the thickness of emitter and collector

Answer

Thickness of collector

Answer

Thickness of emitter

Question 32

32. In n-type substances, the minority carriers are

Answer

None of these

Question 33

33. At room temperature, a p-type semi-conductor has

Answer

Large number of free electrons and few holes

Answer

Large number of holes and few electrons

Answer

Large number of holes and electrons

Answer

Equal number of free electrons and holes

Question 34

34. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 35

35. If on increasing temperature the resistance decreases, then it is

Answer

Superconductor

Answer

None of these

Answer

Semiconductor

Question 36

36. In a n-p-n transistor:

Answer

Negative charge moves from emitter to base

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Answer

Negative charge moves from collector to base

Question 37

37. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 38

38. The width of a depletion layer in a p-n junction is

Answer

Is independent of voltage

Answer

Decreased by reverse biasing

Answer

Increased by reverse biasing

Answer

Increased by forward biasing

Question 39

39. In half wave rectification

Answer

None of these

Answer

Current flows in pulses

Answer

Current flows in one directions

Answer

Only half cycle is used

Question 40

40. In semiconductors at a room temperature

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is completely filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Question 41

41. Which one is forward bias?

Question 42

42. When n-p-n transistor is used as an amplifier

Answer

Electrons move from base to collector

Answer

Holes move from base to emitter

Answer

Holes move from emitter to base

Answer

Holes move from emitter be base

Question 43

43. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 44

44. The simplest type of rectification known as half wave rectification is obtained by

Answer

Using a Coolidge tube

Answer

Using a transistor

Answer

Suppressing the harmonics in A.C voltage

Answer

Suppressing half wave of A.C supply by using diode

Question 45

45. Zener breakdown in a semiconductor diode occurs when

Answer

Forward current exceeds certain value

Answer

Reverse bias exceeds certain value

Answer

Potential barrier is reduced to zero

Answer

Forward bias exceeds certain value

Question 46

46. A transistor consists of

Answer

Two PN-junctions

Answer

Four PN-junctions

Answer

Three PN-junctions

Answer

One PN-junction

Question 47

47. Barrier potential of a p-n junction diode does not depend on:

Answer

Doping density

Answer

Temperature

Answer

Forward bias

Answer

Diode design

Question 48

48. The gain A of the amplifier is of the order of

Answer

None of these

Answer

Man hundred

Question 49

49. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 50

50. In a P-type semiconductor

Answer

Major current carriers are mobile negative ions

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile holes

Question 51

51. In p-type semi-conductor, the majority charge carriers are

Question 52

52. n-type semiconductor if formed

Answer

From pure Ge crystal

Answer

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer

From pure Si crystal

Answer

When a Ge crystal is doped with an impurity containing 5 valence electrons

Question 53

53. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Holes and electrons

Answer

Electrons and holes

Answer

Protons and electrons

Answer

Electrons and protons

Question 54

54. A diode as a rectifier converts:

Answer

A.C. into D.C.

Answer

D.C. into A.C.

Answer

Low voltage to high voltage

Answer

High voltage to low voltage

Question 55

55. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type conductor

Answer

n-type semiconductor

Answer

p-type semiconductor

Answer

p-type conductor

Question 56

56. In Germanium crystal, impurity donor elements have valiancy

Question 57

57. In a n-p-n transistor:

Answer

Negative charge moves from emitter to base

Answer

Negative charge moves from collector to base

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Question 58

58. The materials in which valence band and conduction band overlap are called

Answer

Conductors

Answer

Superconductors

Answer

Insulators

Answer

Semiconductors

Question 59

59. To use a transistor as an amplifier

Answer

Both junctions are reverse biased

Answer

Both junctions are forward biased

Answer

No bias voltages are required

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Question 60

60. The transistor provide good power amplification when they are used in

Answer

Common collector configuration

Answer

None of these

Answer

Common emitter configuration

Answer

Common base configuration

Question 61

61. When boron is added as an impurity to silicon, the resulting material is:

Answer

n-type semiconductor

Answer

p-type conductor

Answer

n-type conductor

Answer

p-type semiconductor

Question 62

62. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 63

63. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Less than one

Answer

Equal to one

Answer

Greater than one

Question 64

64. Photodiode is used for

Answer

Detection of light

Answer

None of these

Answer

Light display

Answer

Emission of light

Answer 184

Heat energy

Answer 185

Light energy

Answer 186

None of these

Answer 187

Chemical energy

Answer 188

All inputs are HIGH

Answer 189

At least one input is LOW

Answer 190

All inputs are LOW

Answer 191

At least one input is HIGH

Answer 192

Rectification

Answer 193

Magnification

Answer 194

Amplification

Answer 195

All of these

Answer 196

None of these

Answer 197

That the base be heated

Answer 198

That the emitter be heated

Answer 199

That the collector be heated

Answer 200

Any of above

Answer 201

The number of mobile holes exceeds the number of acceptors

Answer 202

Major current carrier is electrons

Answer 203

Major carrier is mobile holes

Answer 204

Major carrier is mobile negative ions

Answer 205

Phosphorus

Answer 206

Aids the input signal

Answer 207

Opposes the input signal

Answer 208

Is proportional to differential voltage gain

Answer 209

Is proportional to output current

Answer 210

None of these

Answer 211

Large number of holes and electrons

Answer 212

Large number of holes and few electrons

Answer 213

Equal number of free electrons and holes

Answer 214

Large number of free electrons and few holes

Answer 215

Transformers

Answer 216

Electric motors

Answer 217

Electric generations

Answer 218

Either emitter or collector

Answer 219

Crystal lattice

Answer 220

All of these

Answer 221

Potential is maximum

Answer 222

Electric field is maximum

Answer 223

Electric field is zero

Answer 224

Potential is zero

Answer 225

None of these

Answer 226

Variable amplitude

Answer 227

Zero amplitude

Answer 228

Constant amplitude

Answer 229

Unit amplitude

Answer 230

None of these

Answer 231

A very high input impedance

Answer 232

A low output impedance

Answer 233

A very low input impedance

Answer 234

Low voltage to high voltage

Answer 235

D.C. into A.C.

Answer 236

A.C. into D.C.

Answer 237

High voltage to low voltage

Answer 238

Three diodes in common

Answer 239

Step down transformer

Answer 240

Step up transformer

Answer 241

Triode vacuum tube

Answer 242

None of these

Answer 243

Equal to electrons

Answer 244

Greater than electrons

Answer 245

Less than electrons

Answer 246

Remains constant

Answer 247

First A and B

Answer 248

Filtering circuit

Answer 249

An amplifier

Answer 250

A rectifier

Answer 251

90° Phase shift

Answer 252

No Phase shift

Answer 253

120° Phase shift

Answer 254

180° Phase shift

Answer 255

Phosphorus

Answer 256

Band levels

Answer 257

Hidden energy states

Answer 258

Forbidden energy states

Answer 259

None of these

Answer 260

NAND gates

Answer 261

Oscillator

Answer 262

Non-inverting terminal is at high potential

Answer 263

Both are at the same potential

Answer 264

Both are at the high potential

Answer 265

Inverting terminal is at high potential

Answer 266

Drift of charges

Answer 267

Diffusion of charges

Answer 268

Depends upon the nature of material

Answer 269

Both drift and diffusion of charges

Answer 270

Potential is maximum

Answer 271

Electric field is zero

Answer 272

Electric field is maximum

Answer 273

Potential is zero

Answer 274

None of these

Answer 275

Depletion region

Answer 276

Charged region

Answer 277

Diffusion region

Answer 278

Any of above

Answer 279

Slightly less than emitter current

Answer 280

Equal to emitter current

Answer 281

Greater than emitter current

Answer 282

Under forward bias

Answer 283

When temperature varies

Answer 284

Under reverse bias

Answer 285

During the manufacturing process

Answer 286

Oscillator

Answer 287

Multivibrator

Answer 288

None of these

Answer 289

Dual carriers

Answer 290

Majority carriers

Answer 291

Minority carriers

Answer 292

Any of the above depending on nature of transistor

Answer 293

Input and out signals are in phase

Answer 294

None of these

Answer 295

Input and out signals are not in phase

Answer 296

May be in phase or not

Answer 297

Bulk’s modulus

Answer 298

Modulus of electricity

Answer 299

None of these

Answer 300

Young’s modulus

Answer 301

None of these

Answer 302

Semiconductor

Answer 303

Virtual input

Answer 304

Reference voltage on the other

Answer 305

Non-inverting voltage at output

Answer 306

Full wave rectifier

Answer 307

Half wave rectifier

Answer 308

Increase the minority carrier current

Answer 309

Lowers the potential barrier

Answer 310

Increase the majority carrier current

Answer 311

Raises the potential barrier

Answer 312

Almost negligible

Answer 313

Nanosecond

Answer 314

None of these

Answer 315

Microsecond

Answer 316

Millisecond

Answer 317

None of these

Answer 318

Solar cells

Answer 319

The switch

Answer 320

The photo diodes

Answer 321

The light emitting diode

Answer 322

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 323

It has high resistance to the current flow when reverse biased

Answer 324

Its conductivity increases with rise of temperature

Answer 325

It has low resistance to the current flow when forward biased

Answer 326

All of above

Answer 327

Several mega ohms

Answer 328

Potential barrier in depletion layer remains unchanged

Answer 329

Diode is reverse biased

Answer 330

Diode is forward based

Answer 331

Potential barrier in depletion layer increases

Answer 332

Oscillator

Answer 333

Logic gates

Answer 334

Is located on the emitter

Answer 335

Is located on the base

Answer 336

Is locate on the collector

Answer 337

Point from north to south

Answer 338

Both A.C. & D.C.

Answer 339

None of these

Answer 340

High potential at N side and low potential at P side

Answer 341

High potential at P side and low potential at N side

Answer 342

Undetermined

Answer 343

P and N both are at same potential

Answer 344

Remain fixed

Answer 345

Decreases slowly

Answer 346

Suddenly increases

Answer 347

Increases slowly

Answer 348

Increased by reverse biasing

Answer 349

Is independent of voltage

Answer 350

Increased by forward biasing

Answer 351

Decreased by reverse biasing

Answer 352

Remains unchanged

Answer 353

Decreases and then increases

Answer 354

Holes move from emitter to base

Answer 355

Electrons move from base to collector

Answer 356

Holes move from emitter to base

Answer 357

Holes move from base to emitter

Answer 358

Increase its electrical conductivity

Answer 359

Increase its life

Answer 360

Enable it to Telerate higher voltage

Answer 361

Increase its electrical resistivity

Answer 362

p-carriers and n-carriers respectively

Answer 363

n-carriers only

Answer 364

n-carriers and p-carriers respectively

Answer 365

p-carriers only

Answer 366

None of these

Answer 367

Input resistance

Answer 368

Voltage gain

Answer 369

Current gain

Answer 370

The conduction band is completely empty

Answer 371

The valence band is partially empty and the conduction band is partially filled

Answer 372

The valence band is completely filled

Answer 373

The valence band is completely filled and the conduction band is partially filled

Answer 374

P-type material

Answer 375

Switching device

Answer 376

All of these

Answer 377

Collector is positive and emitter is negative with respect to the base

Answer 378

Collector is positive and emitter is at negative potential as the base

Answer 379

Both collector and emitter are positive with respect to the base

Answer 380

Both collector and emitter are negative with respect to the base

Answer 381

Lowers the potential barrier

Answer 382

Increases the majority carrier current

Answer 383

Raises the potential barrier

Answer 384

Increase the minority carrier current

Answer 385

Low degree resistor

Answer 386

Low degree radiations

Answer 387

Light dependent resistance

Answer 388

None of these

Answer 389

Valence band is partially filled with electrons

Answer 390

Conduction band is empty and valence band is filled with electrons

Answer 391

Conduction band is filled with electrons and valence band is empty

Answer 392

Conduction band is partially filled with electrons

Answer 393

Major current carriers are electrons

Answer 394

Major current carriers are mobile holes

Answer 395

Major current carriers are mobile negative ions

Answer 396

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 397

Resistance of both increases

Answer 398

Resistance of copper decreases while that of germanium increases

Answer 399

Resistance of both decreases

Answer 400

Resistance of copper increases while that of germanium decreases

Answer 401

Superconductor

Answer 402

Oscillator

Answer 403

P-type material

Answer 404

Compress ional stress

Answer 405

Shear stress

Answer 406

Tensile stress

Answer 407

None of these

Answer 408

None of these

Answer 409

Shear modulus

Answer 410

Bulk modulus

Answer 411

Young’s modulus

Answer 412

Phosphorus

Answer 413

Transistor

Answer 414

Superconductors

Answer 415

Semiconductors

Answer 416

Insulators

Answer 417

Increase its electrical resistivity

Answer 418

Increases its electrical conductivity

Answer 419

Increase its life

Answer 420

Enable it to Telerate higher voltage

Answer 421

None of these

Answer 422

It offers a very high inputs resistance to the input current

Answer 423

It offers a very low open loop gain all of above

Answer 424

It offers a very low output resistance

Answer 425

N-type semiconductor

Answer 426

N-type conductor

Answer 427

None of these

Answer 428

P-type semiconductor

Answer 429

Extra electrons

Answer 430

Missing of electrons

Answer 431

Missing electrons

Answer 432

Extra electrons

Answer 433

Can be any of the above three

Answer 434

Copper decreases and germanium increases

Answer 435

Copper increases and germanium decreases

Answer 436

Each of them increases

Answer 437

Each of them decreases

Answer 438

Negative charged

Answer 439

None of these

Answer 440

Positively charged

Answer 441

Missing electrons

Answer 442

Extra electrons

Answer 443

Solvent is used

Answer 444

Resistor is used

Answer 445

None of these

Answer 446

Capacitor is used

Answer 447

None of these

Answer 448

Forward biases

Answer 449

Reverse biased

Answer 450

Conduction band is filled with electrons and valence bad is empty

Answer 451

Valence band is partially filled with electrons

Answer 452

Conduction band is partially filled with electrons

Answer 453

Conduction band is empty and valence band is filled with electrons

Answer 454

INVERTER gate

Answer 455

Comparator

Answer 456

Remains same

Answer 457

p-type conductor

Answer 458

n-type conductor

Answer 459

p-type semiconductor

Answer 460

n-type semiconductor

Answer 461

10¯⁶ cm

Answer 462

10¯¹² cm

Answer 463

Can be any of the above three

Answer 464

Semiconductor

Answer 465

any of above

Answer 466

A basic gate

Answer 467

Not a universal gate

Answer 468

A basic universal gate

Answer 469

A universal gate

Answer 470

Tightly bound electrons

Answer 471

Valence electrons

Answer 472

None of these

Answer 473

Free electrons

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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