Physics Electronics Online Mcqs Test

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Question 1

1. Semi-conductors with donor atoms and free electrons belong to the type

Answer

any of above

Question 2

2. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

Forbidden energy states

Answer

Hidden energy states

Answer

Band levels

Answer

None of these

Question 3

3. In the transistor schematic symbol, the arrow

Answer

Is located on the emitter

Answer

Is located on the base

Answer

Is locate on the collector

Answer

Point from north to south

Question 4

4. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of copper decreases while that of germanium increases

Answer

Resistance of both decreases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of both increases

Question 5

5. Which logic gate is represented by following diagram?

Question 6

6. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 7

7. In semiconductors at a room temperature

Answer

The conduction band is completely empty

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is completely filled

Answer

The valence band is partially empty and the conduction band is partially filled

Question 8

8. The part of a transistor, which is heavily doped to produce a large number of majority carriers, is

Answer

None of these

Question 9

9. In a junction diode, the holes are due to

Answer

Extra electrons

Answer

Missing of electrons

Question 10

10. Light emitting diode work when it is

Answer

Forward biases

Answer

Reverse biased

Answer

None of these

Question 11

11. The critical temperature for mercury is

Question 12

12. Which of the following is not characteristic of an op—amp

Answer

It offers a very low output resistance

Answer

It offers a very low open loop gain all of above

Answer

It offers a very high inputs resistance to the input current

Answer

None of these

Question 13

13. In a n-p-n transistor:

Answer

Negative charge moves from collector to base

Answer

Holes move from emitter to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from base to collector

Question 14

14. The width of a depletion layer in a p-n junction is

Answer

Is independent of voltage

Answer

Increased by forward biasing

Answer

Increased by reverse biasing

Answer

Decreased by reverse biasing

Question 15

15. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 16

16. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 17

17. In p-n-p transistor the collector current is

Answer

Equal to emitter current

Answer

Greater than emitter current

Answer

Any of above

Answer

Slightly less than emitter current

Question 18

18. Electrons present in p-type material due to thermal pair generation are

Answer

Dual carriers

Answer

Minority carriers

Answer

Majority carriers

Question 19

19. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 20

20. The potential difference across the depletion region of silicon is

Question 21

21. Non-inverting amplifier circuits have

Answer

A very low input impedance

Answer

A very high input impedance

Answer

A low output impedance

Answer

None of these

Question 22

22. Depletion region of a junction is formed

Answer

During the manufacturing process

Answer

When temperature varies

Answer

Under forward bias

Answer

Under reverse bias

Question 23

23. The materials in which valence band and conduction band overlap are called

Answer

Semiconductors

Answer

Superconductors

Answer

Insulators

Answer

Conductors

Question 24

24. When a pentavalent material like As, is added to tetravalent material l.e. Ge, we get a

Answer

Semiconductor

Answer

N-type material

Answer

P-type material

Answer

Super conductor

Question 25

25. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Potential is maximum

Answer

Electric field is zero

Answer

Potential is zero

Answer

Electric field is maximum

Question 26

26. Polythene, potystrene and nylon are examples of

Answer

Polymeric solids

Answer

Crystalline solids

Answer

Glassy solids

Answer

Amorphous solids

Question 27

27. The p-n junction diode works as insulator, if connected

Answer

In forward bias

Answer

In reverse bias

Answer

None of these

Question 28

28. When the output of OR gate is 1

Answer

If both inputs are zero

Answer

If either input is zero

Answer

Only if both inputs are 1

Answer

If either or both inputs are 1

Question 29

29. In n-p-n transistor, p works as

Answer

Any of above

Question 30

30. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Copper increases and germanium decreases

Answer

Each of them decreases

Answer

Copper decreases and germanium increases

Answer

Each of them increases

Question 31

31. The part of a transistor which is heavily doped to produce large number of majority carriers is

Answer

Any of the above depending on nature of transistor

Question 32

32. In p-type semi-conductor, the majority charge carriers are

Question 33

33. Barrier potential of a p-n junction diode does not depend on:

Answer

Temperature

Answer

Diode design

Answer

Doping density

Answer

Forward bias

Question 34

34. The ratio of applied stress to volumetric strain is called

Answer

Shear modulus

Answer

Young’s modulus

Answer

Bulk modulus

Answer

None of these

Question 35

35. The energy band gap is maximum in

Answer

Superconductors

Answer

Semiconductors

Answer

Insulators

Question 36

36. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 37

37. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

AND gates, OR gates, and NOT gates

Answer

Or gates and NOT gates

Answer

AND gates and NOT gates

Answer

OR gates only

Question 38

38. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Reversed biased

Answer

None of these

Answer

Forward biased

Answer

Zero biased

Question 39

39. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 40

40. The ratio of tensile stress to tensile strain is called

Answer

None of these

Answer

Bulk’s modulus

Answer

Modulus of electricity

Answer

Young’s modulus

Question 41

41. n-type semiconductor if formed

Answer

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer

From pure Si crystal

Answer

From pure Ge crystal

Answer

When a Ge crystal is doped with an impurity containing 5 valence electrons

Question 42

42. The ratio β represents

Question 43

43. To use a transistor as an amplifier

Answer

Both junctions are reverse biased

Answer

Both junctions are forward biased

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

No bias voltages are required

Question 44

44. When the conductivity of a semiconductor is only due, to breaking of covalent bonds, the semiconductor is called

Question 45

45. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Electrons and protons

Answer

Holes and electrons

Answer

Protons and electrons

Answer

Electrons and holes

Question 46

46. The ratio β shows the

Answer

Input resistance

Answer

None of these

Answer

Voltage gain

Answer

Current gain

Question 47

47. In a P-type semiconductor

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are mobile holes

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile negative ions

Question 48

48. The electrical circuit used to have smooth DC output from a rectifier circuit is called

Answer

Oscillator

Answer

Logic gates

Question 49

49. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 50

50. When a semiconductor is continuously heated, then value of its resistance

Answer

Remains unchanged

Answer

Decreases and then increases

Question 51

51. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 52

52. Using OP-Amp as an inverting amplifier, the non-inverting terminal has potential

Answer

None of these

Question 53

53. The least doped region in a transistor is

Question 54

54. In half wave rectification

Answer

None of these

Answer

Current flows in pulses

Answer

Current flows in one directions

Answer

Only half cycle is used

Question 55

55. When n-p-n transistor is used as an amplifier

Answer

Holes move from emitter to base

Answer

Electrons move from base to collector

Answer

Holes move from emitter be base

Answer

Holes move from base to emitter

Question 56

56. When NPN transistor is used as an amplifier

Answer

Electrons move from emitter to base

Answer

Electrons move from base to emitter

Answer

Electrons move from collector to base

Answer

Holes move from base to emitter

Question 57

57. The number of junctions in the PNP transistor are

Question 58

58. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 59

59. When an alternating accelerating field is applied to a charge it produces

Answer

Electromagnetic Waves

Answer

Gamma Rays

Answer

Transverse Waves

Question 60

60. Identify the correct statement about minority carriers

Answer

Free electrons in n-type and p-type

Answer

Holes in n-type and free electrons in p-type

Answer

Holes in n-type and p-type

Answer

Free electrons in n-type and holes in p-type

Question 61

61. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

The switch

Answer

The photo diodes

Answer

The light emitting diode

Answer

Solar cells

Question 62

62. The positive sign of gain indicates that

Answer

Input and out signals are in phase

Answer

Input and out signals are not in phase

Answer

None of these

Answer

May be in phase or not

Question 63

63. The width of a depletion layer in a p-n junction is

Answer

Increased by reverse biasing

Answer

Decreased by reverse biasing

Answer

Increased by forward biasing

Answer

Is independent of voltage

Question 64

64. In n-type substances, the minority carriers are

Answer

None of these

Answer 170

Semiconductor

Answer 171

None of these

Answer 172

Superconductor

Answer 173

Oscillator

Answer 174

Man hundred

Answer 175

None of these

Answer 176

Increase its life

Answer 177

Enable it to Telerate higher voltage

Answer 178

Increase its electrical resistivity

Answer 179

Increases its electrical conductivity

Answer 180

None of these

Answer 181

Almost zero

Answer 182

None of these

Answer 183

Electrons move from base to collector

Answer 184

Holes move from emitter to base

Answer 185

Holes move from emitter to base

Answer 186

Holes move from base to emitter

Answer 187

Major current carrier is electrons

Answer 188

Major carrier is mobile holes

Answer 189

Major carrier is mobile negative ions

Answer 190

The number of mobile holes exceeds the number of acceptors

Answer 191

Negative charged

Answer 192

None of these

Answer 193

Positively charged

Answer 194

Large number of free electrons and few holes

Answer 195

Large number of holes and few electrons

Answer 196

Large number of holes and electrons

Answer 197

Equal number of free electrons and holes

Answer 198

Magnification

Answer 199

All of these

Answer 200

Rectification

Answer 201

Amplification

Answer 202

P-type material

Answer 203

Switching device

Answer 204

Low voltage to high voltage

Answer 205

D.C. into A.C.

Answer 206

A.C. into D.C.

Answer 207

High voltage to low voltage

Answer 208

It has high resistance to the current flow when reverse biased

Answer 209

Its conductivity increases with rise of temperature

Answer 210

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 211

It has low resistance to the current flow when forward biased

Answer 212

Reference voltage on the other

Answer 213

Non-inverting voltage at output

Answer 214

Virtual input

Answer 215

Phosphorus

Answer 216

Step down transformer

Answer 217

Step up transformer

Answer 218

Triode vacuum tube

Answer 219

Three diodes in common

Answer 220

Tensile stress

Answer 221

None of these

Answer 222

Shear stress

Answer 223

Compress ional stress

Answer 224

Mean of thickness of emitter and collector

Answer 225

Very small as compared to the thickness of emitter and collector

Answer 226

Thickness of collector

Answer 227

Thickness of emitter

Answer 228

Semiconductor

Answer 229

None of these

Answer 230

Valence electrons

Answer 231

Tightly bound electrons

Answer 232

Free electrons

Answer 233

Low degree radiations

Answer 234

Light dependent resistance

Answer 235

None of these

Answer 236

Low degree resistor

Answer 237

Logic gates

Answer 238

Oscillator

Answer 239

Increase its electrical conductivity

Answer 240

Increase its life

Answer 241

Increase its electrical resistivity

Answer 242

Enable it to Telerate higher voltage

Answer 243

None of these

Answer 244

Superconductors

Answer 245

Insulators

Answer 246

Semiconductors

Answer 247

All of these

Answer 248

Crystal lattice

Answer 249

p-type conductor

Answer 250

n-type conductor

Answer 251

n-type semiconductor

Answer 252

p-type semiconductor

Answer 253

Using a Coolidge tube

Answer 254

Suppressing half wave of A.C supply by using diode

Answer 255

Using a transistor

Answer 256

Suppressing the harmonics in A.C voltage

Answer 257

n-carriers only

Answer 258

n-carriers and p-carriers respectively

Answer 259

p-carriers only

Answer 260

p-carriers and n-carriers respectively

Answer 261

Variable amplitude

Answer 262

Constant amplitude

Answer 263

Unit amplitude

Answer 264

Zero amplitude

Answer 265

A basic gate

Answer 266

A universal gate

Answer 267

A basic universal gate

Answer 268

Not a universal gate

Answer 269

Common emitter configuration

Answer 270

None of these

Answer 271

Common collector configuration

Answer 272

Common base configuration

Answer 273

Electric generations

Answer 274

Transformers

Answer 275

Electric motors

Answer 276

Works efficiently

Answer 277

Require more current

Answer 278

None of these

Answer 279

Valence band is partially filled with electrons

Answer 280

Conduction band is filled with electrons and valence bad is empty

Answer 281

Conduction band is empty and valence band is filled with electrons

Answer 282

Conduction band is partially filled with electrons

Answer 283

Either emitter or collector

Answer 284

Half wave rectifier

Answer 285

Full wave rectifier

Answer 286

All inputs are LOW

Answer 287

At least one input is LOW

Answer 288

At least one input is HIGH

Answer 289

All inputs are HIGH

Answer 290

Remains same

Answer 291

10¯⁶ cm

Answer 292

10¯¹² cm

Answer 293

Holes move from base to collector

Answer 294

Negative charge moves from emitter to base

Answer 295

Holes move from emitter to base

Answer 296

Negative charge moves from collector to base

Answer 297

Chemical energy

Answer 298

Heat energy

Answer 299

None of these

Answer 300

Light energy

Answer 301

None of these

Answer 302

91 x 10 Nm¯²

Answer 303

70 x 10 Nm¯²

Answer 304

110 Nm¯²

Answer 305

Remain fixed

Answer 306

Increases slowly

Answer 307

Decreases slowly

Answer 308

Suddenly increases

Answer 309

Both drift and diffusion of charges

Answer 310

Diffusion of charges

Answer 311

Depends upon the nature of material

Answer 312

Drift of charges

Answer 313

Four PN-junctions

Answer 314

One PN-junction

Answer 315

Three PN-junctions

Answer 316

Two PN-junctions

Answer 317

Automatic switching

Answer 318

Detection of visible and invisible radiations

Answer 319

Logic gates

Answer 320

None of these

Answer 321

p-type semiconductor

Answer 322

p-type conductor

Answer 323

n-type conductor

Answer 324

n-type semiconductor

Answer 325

Capacitor is used

Answer 326

None of these

Answer 327

Solvent is used

Answer 328

Resistor is used

Answer 329

Missing electrons

Answer 330

Extra electrons

Answer 331

Tetravalent

Answer 332

Pentavalent

Answer 333

Forward bias exceeds certain value

Answer 334

Forward current exceeds certain value

Answer 335

Reverse bias exceeds certain value

Answer 336

Potential barrier is reduced to zero

Answer 337

Both collector and emitter are positive with respect to the base

Answer 338

Collector is positive and emitter is at negative potential as the base

Answer 339

Collector is positive and emitter is negative with respect to the base

Answer 340

Both collector and emitter are negative with respect to the base

Answer 341

None of these

Answer 342

may be p-type or n-type

Answer 343

First A and B

Answer 344

Remains constant

Answer 345

Lowers the potential barrier

Answer 346

Raises the potential barrier

Answer 347

Increases the majority carrier current

Answer 348

Increase the minority carrier current

Answer 349

NAND gates

Answer 350

LOW inputs and a HIGH output

Answer 351

None of these

Answer 352

HIGH inputs and a HIGH output

Answer 353

LOW inputs and a LOW output

Answer 354

Major current carriers are mobile holes

Answer 355

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 356

Major current carriers are electrons

Answer 357

Major current carriers are mobile negative ions

Answer 358

Several mega ohms

Answer 359

Off switch

Answer 360

Copper increases and germanium decreases

Answer 361

Each of them increases

Answer 362

Each of them decreases

Answer 363

Copper decreases and germanium increases

Answer 364

All of above

Answer 365

Diode is neutralized

Answer 366

Diode is forward biased

Answer 367

None of these

Answer 368

Diode is reverse biased

Answer 369

Electric field is zero

Answer 370

Potential is maximum

Answer 371

Electric field is maximum

Answer 372

Potential is zero

Answer 373

None of these

Answer 374

Greater than electrons

Answer 375

Equal to electrons

Answer 376

Less than electrons

Answer 377

The conduction band is completely empty

Answer 378

The valence band is completely filled

Answer 379

The valence band is completely filled and the conduction band is partially filled

Answer 380

The valence band is partially empty and the conduction band is partially filled

Answer 381

None of these

Answer 382

Missing electrons

Answer 383

Extra electrons

Answer 384

Phosphorus

Answer 385

Increases the majority carrier current

Answer 386

Raises the potential barrier

Answer 387

Increase the minority carrier current

Answer 388

Lowers the potential barrier

Answer 389

Opposes the input signal

Answer 390

Aids the input signal

Answer 391

Is proportional to output current

Answer 392

Is proportional to differential voltage gain

Answer 393

High potential at P side and low potential at N side

Answer 394

Undetermined

Answer 395

P and N both are at same potential

Answer 396

High potential at N side and low potential at P side

Answer 397

Less than one

Answer 398

Greater than one

Answer 399

Equal to one

Answer 400

None of these

Answer 401

Superconductor

Answer 402

Semiconductor

Answer 403

Diffusion region

Answer 404

Depletion region

Answer 405

Charged region

Answer 406

None of these

Answer 407

All of these

Answer 408

None of these

Answer 409

N-type semiconductor

Answer 410

P-type semiconductor

Answer 411

N-type conductor

Answer 412

p-type conductor

Answer 413

p-type semiconductor

Answer 414

n-type semiconductor

Answer 415

n-type conductor

Answer 416

Equal number of free electrons and holes

Answer 417

Large number of holes and electrons

Answer 418

Large number of free electrons and few holes

Answer 419

Large number of holes and few electrons

Answer 420

Both A.C. & D.C.

Answer 421

None of these

Answer 422

Number of electrons and holes increases equally

Answer 423

Number of holes increases while that of holes decreases

Answer 424

Number of electrons increases while that of holes decreases

Answer 425

Number of electrons and holes remains same

Answer 426

D.C. into A.C.

Answer 427

High voltage to low voltage

Answer 428

A.C. into D.C.

Answer 429

Low voltage to high voltage

Answer 430

90° Phase shift

Answer 431

No Phase shift

Answer 432

120° Phase shift

Answer 433

180° Phase shift

Answer 434

Can be any of the above three

Answer 435

Both are at the high potential

Answer 436

Inverting terminal is at high potential

Answer 437

Both are at the same potential

Answer 438

Non-inverting terminal is at high potential

Answer 439

None of these

Answer 440

That the base be heated

Answer 441

That the emitter be heated

Answer 442

That the collector be heated

Answer 443

Almost negligible

Answer 444

Oscillator

Answer 445

P-type material

Answer 446

Multivibrator

Answer 447

Oscillator

Answer 448

An amplifier

Answer 449

A rectifier

Answer 450

Filtering circuit

Answer 451

None of these

Answer 452

Millisecond

Answer 453

Nanosecond

Answer 454

Microsecond

Answer 455

Conduction band is partially filled with electrons

Answer 456

Conduction band is empty and valence band is filled with electrons

Answer 457

Conduction band is filled with electrons and valence band is empty

Answer 458

Valence band is partially filled with electrons

Answer 459

Lowers the potential barrier

Answer 460

Raises the potential barrier

Answer 461

Increase the minority carrier current

Answer 462

Increase the majority carrier current

Answer 463

Comparator

Answer 464

INVERTER gate

Answer 465

Transistor

Answer 466

Diode is reverse biased

Answer 467

Potential barrier in depletion layer remains unchanged

Answer 468

Potential barrier in depletion layer increases

Answer 469

Diode is forward based

Answer 470

Emission of light

Answer 471

Light display

Answer 472

None of these

Answer 473

Detection of light

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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