Physics Electronics Online Mcqs Test

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Question 1

1. Which of the following when added as an impurity into the silicon produces n-type semi-conductor?

Question 2

2. The transistor provide good power amplification when they are used in

Answer

Common emitter configuration

Answer

Common collector configuration

Answer

None of these

Answer

Common base configuration

Question 3

3. At room temperature, a p-type semi-conductor has

Answer

Large number of holes and few electrons

Answer

Large number of holes and electrons

Answer

Equal number of free electrons and holes

Answer

Large number of free electrons and few holes

Question 4

4. In p-n-p transistor the collector current is

Answer

Slightly less than emitter current

Answer

Equal to emitter current

Answer

Greater than emitter current

Answer

Any of above

Question 5

5. The units of modulus of elasticity are same as that of

Answer

None of these

Question 6

6. The ratio of applied stress to volumetric strain is called

Answer

Bulk modulus

Answer

Shear modulus

Answer

Young’s modulus

Answer

None of these

Question 7

7. Symbol represents

Question 8

8. A photodiode can turn its current ON and OFF in

Answer

Microsecond

Answer

None of these

Answer

Nanosecond

Answer

Millisecond

Question 9

9. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 10

10. The electrical circuit used to have smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 11

11. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Potential barrier in depletion layer increases

Answer

Diode is forward based

Answer

Potential barrier in depletion layer remains unchanged

Answer

Diode is reverse biased

Question 12

12. Semi-conductors with donor atoms and free electrons belong to the type

Answer

any of above

Question 13

13. NAND gate is

Answer

A basic universal gate

Answer

A universal gate

Answer

Not a universal gate

Answer

A basic gate

Question 14

14. Which one is forward bias?

Question 15

15. The potential difference across the depletion region of silicon is

Question 16

16. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 17

17. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

Solar cells

Answer

The photo diodes

Answer

The light emitting diode

Answer

The switch

Question 18

18. Which is normal used of transistor?

Answer

P-type material

Answer

Switching device

Question 19

19. Depletion region of a junction is formed

Answer

During the manufacturing process

Answer

Under reverse bias

Answer

Under forward bias

Answer

When temperature varies

Question 20

20. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Constant amplitude

Answer

Zero amplitude

Answer

Unit amplitude

Answer

Variable amplitude

Question 21

21. In semiconductors at a room temperature

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Question 22

22. LDR means:

Answer

Low degree resistor

Answer

Low degree radiations

Answer

None of these

Answer

Light dependent resistance

Question 23

23. Due to high loop gain of the amplifier, the inverting and non-inverting inputs are

Answer

Inverting terminal is at high potential

Answer

Non-inverting terminal is at high potential

Answer

Both are at the high potential

Answer

Both are at the same potential

Question 24

24. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 25

25. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

Diode is neutralized

Answer

Diode is forward biased

Answer

Diode is reverse biased

Answer

None of these

Question 26

26. Transistors with various combinations are widely used as switches in:

Answer

Transformers

Answer

Electric motors

Answer

Electric generations

Question 27

27. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 28

28. The width of a depletion layer in a p-n junction is

Answer

Increased by forward biasing

Answer

Is independent of voltage

Answer

Increased by reverse biasing

Answer

Decreased by reverse biasing

Question 29

29. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical resistivity

Answer

Increase its electrical conductivity

Answer

Increase its life

Question 30

30. An OP-AMPs can amplify

Answer

Both A.C. & D.C.

Answer

None of these

Question 31

31. When n-p-n transistor is used as an amplifier

Answer

Holes move from base to emitter

Answer

Electrons move from base to collector

Answer

Holes move from emitter be base

Answer

Holes move from emitter to base

Question 32

32. In forward bias, the width of potential barrier in a p-n junction diode

Answer

First A and B

Answer

Remains constant

Question 33

33. A device which converts an alternating current to direct current is called

Answer

P-type material

Answer

Oscillator

Question 34

34. The least doped region in a transistor is

Answer

Either emitter or collector

Question 35

35. The electrical circuit used to bet smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 36

36. In a n-p-n transistor:

Answer

Negative charge moves from emitter to base

Answer

Negative charge moves from collector to base

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Question 37

37. In half wave rectification

Answer

Only half cycle is used

Answer

Current flows in pulses

Answer

None of these

Answer

Current flows in one directions

Question 38

38. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 39

39. In Germanium crystal, impurity donor elements have valiancy

Question 40

40. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Potential is zero

Answer

Potential is maximum

Answer

Electric field is zero

Answer

Electric field is maximum

Question 41

41. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 42

42. A n-p-n transistor conducts when

Answer

Both collector and emitter are negative with respect to the base

Answer

Collector is positive and emitter is negative with respect to the base

Answer

Collector is positive and emitter is at negative potential as the base

Answer

Both collector and emitter are positive with respect to the base

Question 43

43. The p-n junction diode works as insulator, if connected

Answer

In reverse bias

Answer

In forward bias

Answer

None of these

Question 44

44. Output voltage in full wave rectification is not smooth. In order to have smooth output voltage

Answer

Solvent is used

Answer

Capacitor is used

Answer

None of these

Answer

Resistor is used

Question 45

45. The basic logic gate whose output is the complement of the input is the:

Answer

INVERTER gate

Answer

Comparator

Question 46

46. If a signal passing through a gate is inhibited by sending a low into one of the inputs, and the output is HIGH, the gate is a(n):

Question 47

47. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

OR gates only

Answer

AND gates and NOT gates

Answer

Or gates and NOT gates

Answer

AND gates, OR gates, and NOT gates

Question 48

48. In insulators

Answer

Conduction band is filled with electrons and valence band is empty

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Question 49

49. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

None of these

Answer

Oscillator

Question 50

50. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 51

51. When a strength changes the length of a body, it is called

Answer

None of these

Answer

Shear stress

Answer

Compress ional stress

Answer

Tensile stress

Question 52

52. The whole structure obtained by the repetition of unit cell is known as

Answer

Crystal lattice

Answer

All of these

Question 53

53. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Zero biased

Answer

Forward biased

Answer

Reversed biased

Answer

None of these

Question 54

54. The operation of a transistor requires

Answer

That the collector be heated

Answer

That the emitter be heated

Answer

That the base be heated

Answer

None of these

Question 55

55. In a n-p-n transistor:

Answer

Holes move from base to collector

Answer

Holes move from emitter to base

Answer

Negative charge moves from emitter to base

Answer

Negative charge moves from collector to base

Question 56

56. If on increasing temperature the resistance decreases, then it is

Answer

Semiconductor

Answer

None of these

Answer

Superconductor

Question 57

57. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 58

58. In reverse biasing of p-n junction, the resistance offered by the diode is of the order of

Answer

Several mega ohms

Question 59

59. When a pentavalent material like As, is added to tetravalent material l.e. Ge, we get a

Answer

Super conductor

Answer

N-type material

Answer

P-type material

Answer

Semiconductor

Question 60

60. The ratio of tensile stress to tensile strain is called

Answer

None of these

Answer

Bulk’s modulus

Answer

Modulus of electricity

Answer

Young’s modulus

Question 61

61. Which of the following is not characteristic of an op—amp

Answer

It offers a very low output resistance

Answer

It offers a very low open loop gain all of above

Answer

None of these

Answer

It offers a very high inputs resistance to the input current

Question 62

62. A signal applied at the non-inverting input, of an O.P that appears after amplification at the output terminal, with

Answer

180° Phase shift

Answer

120° Phase shift

Answer

No Phase shift

Answer

90° Phase shift

Question 63

63. In p-type semi-conductor, the majority charge carriers are

Question 64

64. When the conductivity of a semiconductor is only due, to breaking of covalent bonds, the semiconductor is called

Answer 167

Is independent of voltage

Answer 168

Increased by forward biasing

Answer 169

Decreased by reverse biasing

Answer 170

Increased by reverse biasing

Answer 171

may be p-type or n-type

Answer 172

None of these

Answer 173

Three PN-junctions

Answer 174

Two PN-junctions

Answer 175

One PN-junction

Answer 176

Four PN-junctions

Answer 177

Input and out signals are not in phase

Answer 178

None of these

Answer 179

Input and out signals are in phase

Answer 180

May be in phase or not

Answer 181

Negative charged

Answer 182

Positively charged

Answer 183

None of these

Answer 184

Raises the potential barrier

Answer 185

Increase the minority carrier current

Answer 186

Increases the majority carrier current

Answer 187

Lowers the potential barrier

Answer 188

Tetravalent

Answer 189

Pentavalent

Answer 190

Increases slowly

Answer 191

Decreases slowly

Answer 192

Remain fixed

Answer 193

Suddenly increases

Answer 194

Only if both inputs are 1

Answer 195

If either input is zero

Answer 196

If both inputs are zero

Answer 197

If either or both inputs are 1

Answer 198

It has high resistance to the current flow when reverse biased

Answer 199

It has low resistance to the current flow when forward biased

Answer 200

Its conductivity increases with rise of temperature

Answer 201

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 202

A.C. into D.C.

Answer 203

D.C. into A.C.

Answer 204

High voltage to low voltage

Answer 205

Low voltage to high voltage

Answer 206

Copper decreases and germanium increases

Answer 207

Each of them increases

Answer 208

Copper increases and germanium decreases

Answer 209

Each of them decreases

Answer 210

None of these

Answer 211

Valence electrons

Answer 212

Free electrons

Answer 213

Tightly bound electrons

Answer 214

Electromagnetic Waves

Answer 215

Gamma Rays

Answer 216

Transverse Waves

Answer 217

Insulators

Answer 218

Semiconductors

Answer 219

Superconductors

Answer 220

None of these

Answer 221

Lowers the potential barrier

Answer 222

Increase the minority carrier current

Answer 223

Raises the potential barrier

Answer 224

Increase the majority carrier current

Answer 225

Require more current

Answer 226

Works efficiently

Answer 227

None of these

Answer 228

At least one input is HIGH

Answer 229

All inputs are LOW

Answer 230

All inputs are HIGH

Answer 231

At least one input is LOW

Answer 232

Electrons and protons

Answer 233

Protons and electrons

Answer 234

Electrons and holes

Answer 235

Holes and electrons

Answer 236

N-type conductor

Answer 237

P-type semiconductor

Answer 238

None of these

Answer 239

N-type semiconductor

Answer 240

Off switch

Answer 241

None of these

Answer 242

None of these

Answer 243

A very low input impedance

Answer 244

A very high input impedance

Answer 245

A low output impedance

Answer 246

None of these

Answer 247

Doping density

Answer 248

Forward bias

Answer 249

Temperature

Answer 250

Diode design

Answer 251

Suppressing half wave of A.C supply by using diode

Answer 252

Using a transistor

Answer 253

Using a Coolidge tube

Answer 254

Suppressing the harmonics in A.C voltage

Answer 255

Immobile ions

Answer 256

Mobile ions

Answer 257

Point from north to south

Answer 258

Is located on the base

Answer 259

Is located on the emitter

Answer 260

Is locate on the collector

Answer 261

Electrons move from emitter to base

Answer 262

Electrons move from base to emitter

Answer 263

Holes move from base to emitter

Answer 264

Electrons move from collector to base

Answer 265

Can be any of the above three

Answer 266

All of above

Answer 267

None of these

Answer 268

All of these

Answer 269

Depends upon the nature of material

Answer 270

Both drift and diffusion of charges

Answer 271

Diffusion of charges

Answer 272

Drift of charges

Answer 273

Any of the above depending on nature of transistor

Answer 274

None of these

Answer 275

Detection of visible and invisible radiations

Answer 276

Logic gates

Answer 277

Automatic switching

Answer 278

Holes move from emitter to base

Answer 279

Holes move from base to emitter

Answer 280

Electrons move from base to collector

Answer 281

Holes move from emitter to base

Answer 282

None of these

Answer 283

LOW inputs and a LOW output

Answer 284

HIGH inputs and a HIGH output

Answer 285

None of these

Answer 286

LOW inputs and a HIGH output

Answer 287

Man hundred

Answer 288

None of these

Answer 289

Almost negligible

Answer 290

The number of mobile holes exceeds the number of acceptors

Answer 291

Major carrier is mobile holes

Answer 292

Major current carrier is electrons

Answer 293

Major carrier is mobile negative ions

Answer 294

Missing electrons

Answer 295

Extra electrons

Answer 296

Electric field is maximum

Answer 297

Potential is zero

Answer 298

Electric field is zero

Answer 299

Potential is maximum

Answer 300

Thickness of emitter

Answer 301

Mean of thickness of emitter and collector

Answer 302

Very small as compared to the thickness of emitter and collector

Answer 303

Thickness of collector

Answer 304

Almost zero

Answer 305

None of these

Answer 306

Copper increases and germanium decreases

Answer 307

Each of them increases

Answer 308

Each of them decreases

Answer 309

Copper decreases and germanium increases

Answer 310

Band levels

Answer 311

Hidden energy states

Answer 312

Forbidden energy states

Answer 313

None of these

Answer 314

Remains unchanged

Answer 315

Decreases and then increases

Answer 316

Greater than electrons

Answer 317

Equal to electrons

Answer 318

Less than electrons

Answer 319

Opposes the input signal

Answer 320

Aids the input signal

Answer 321

Is proportional to output current

Answer 322

Is proportional to differential voltage gain

Answer 323

An amplifier

Answer 324

Filtering circuit

Answer 325

A rectifier

Answer 326

Dual carriers

Answer 327

Majority carriers

Answer 328

Minority carriers

Answer 329

Major current carriers are mobile negative ions

Answer 330

Major current carriers are mobile holes

Answer 331

Major current carriers are electrons

Answer 332

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 333

Reverse bias exceeds certain value

Answer 334

Potential barrier is reduced to zero

Answer 335

Forward bias exceeds certain value

Answer 336

Forward current exceeds certain value

Answer 337

Conductors

Answer 338

Insulators

Answer 339

Superconductors

Answer 340

Semiconductors

Answer 341

None of these

Answer 342

Light energy

Answer 343

Heat energy

Answer 344

Chemical energy

Answer 345

Remains unchanged

Answer 346

Decreases and then increases

Answer 347

Number of holes increases while that of holes decreases

Answer 348

Number of electrons increases while that of holes decreases

Answer 349

Number of electrons and holes remains same

Answer 350

Number of electrons and holes increases equally

Answer 351

10¯⁶ cm

Answer 352

10¯¹² cm

Answer 353

Detection of light

Answer 354

Emission of light

Answer 355

Light display

Answer 356

None of these

Answer 357

Missing of electrons

Answer 358

Extra electrons

Answer 359

n-carriers and p-carriers respectively

Answer 360

n-carriers only

Answer 361

p-carriers and n-carriers respectively

Answer 362

p-carriers only

Answer 363

Free electrons in n-type and holes in p-type

Answer 364

Holes in n-type and free electrons in p-type

Answer 365

Free electrons in n-type and p-type

Answer 366

Holes in n-type and p-type

Answer 367

NAND gates

Answer 368

Missing electrons

Answer 369

Extra electrons

Answer 370

Lowers the potential barrier

Answer 371

Raises the potential barrier

Answer 372

Increases the majority carrier current

Answer 373

Increase the minority carrier current

Answer 374

Equal number of free electrons and holes

Answer 375

Large number of holes and few electrons

Answer 376

Large number of free electrons and few holes

Answer 377

Large number of holes and electrons

Answer 378

Valence band is partially filled with electrons

Answer 379

Conduction band is filled with electrons and valence bad is empty

Answer 380

Conduction band is empty and valence band is filled with electrons

Answer 381

Conduction band is partially filled with electrons

Answer 382

All of these

Answer 383

Rectification

Answer 384

Amplification

Answer 385

Magnification

Answer 386

Current gain

Answer 387

Input resistance

Answer 388

Voltage gain

Answer 389

None of these

Answer 390

Half wave rectifier

Answer 391

Full wave rectifier

Answer 392

Increase its electrical resistivity

Answer 393

Increase its life

Answer 394

Increases its electrical conductivity

Answer 395

Enable it to Telerate higher voltage

Answer 396

Both junctions are forward biased

Answer 397

Both junctions are reverse biased

Answer 398

No bias voltages are required

Answer 399

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 400

None of these

Answer 401

Charged region

Answer 402

Depletion region

Answer 403

Diffusion region

Answer 404

Major current carriers are electrons

Answer 405

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 406

Major current carriers are mobile negative ions

Answer 407

Major current carriers are mobile holes

Answer 408

The valence band is completely filled and the conduction band is partially filled

Answer 409

The valence band is completely filled

Answer 410

The conduction band is completely empty

Answer 411

The valence band is partially empty and the conduction band is partially filled

Answer 412

Virtual input

Answer 413

Non-inverting voltage at output

Answer 414

Reference voltage on the other

Answer 415

Can be any of the above three

Answer 416

Reverse biased

Answer 417

None of these

Answer 418

Forward biases

Answer 419

Greater than one

Answer 420

Less than one

Answer 421

Equal to one

Answer 422

None of these

Answer 423

Resistance of both decreases

Answer 424

Resistance of copper decreases while that of germanium increases

Answer 425

Resistance of both increases

Answer 426

Resistance of copper increases while that of germanium decreases

Answer 427

High voltage to low voltage

Answer 428

A.C. into D.C.

Answer 429

Low voltage to high voltage

Answer 430

D.C. into A.C.

Answer 431

Superconductors

Answer 432

Insulators

Answer 433

Semiconductors

Answer 434

Polymeric solids

Answer 435

Glassy solids

Answer 436

Crystalline solids

Answer 437

Amorphous solids

Answer 438

From pure Ge crystal

Answer 439

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 440

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 441

From pure Si crystal

Answer 442

Multivibrator

Answer 443

Oscillator

Answer 444

Phosphorus

Answer 445

None of these

Answer 446

110 Nm¯²

Answer 447

70 x 10 Nm¯²

Answer 448

91 x 10 Nm¯²

Answer 449

p-type conductor

Answer 450

p-type semiconductor

Answer 451

n-type conductor

Answer 452

n-type semiconductor

Answer 453

n-type semiconductor

Answer 454

n-type conductor

Answer 455

p-type semiconductor

Answer 456

p-type conductor

Answer 457

P and N both are at same potential

Answer 458

High potential at N side and low potential at P side

Answer 459

Undetermined

Answer 460

High potential at P side and low potential at N side

Answer 461

Any of above

Answer 462

Three diodes in common

Answer 463

Step up transformer

Answer 464

Triode vacuum tube

Answer 465

Step down transformer

Answer 466

Phosphorus

Answer 467

Semiconductor

Answer 468

None of these

Answer 469

Remains same

Answer 470

n-type conductor

Answer 471

p-type conductor

Answer 472

n-type semiconductor

Answer 473

p-type semiconductor

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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