Physics Electronics Online Mcqs Test

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Question 1

1. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 2

2. In the transistor schematic symbol, the arrow

Answer

Is located on the emitter

Answer

Is locate on the collector

Answer

Is located on the base

Answer

Point from north to south

Question 3

3. The logic gate that will have HIGH or “1” at its output when any one of its input if HIGH is a(n):

Question 4

4. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Reversed biased

Answer

Zero biased

Answer

None of these

Answer

Forward biased

Question 5

5. Diode can work as

Answer

Multivibrator

Answer

Oscillator

Question 6

6. The whole structure obtained by the repetition of unit cell is known as

Answer

Crystal lattice

Answer

All of these

Question 7

7. Young’s modulus for copper is

Answer

70 x 10 Nm¯²

Answer

110 Nm¯²

Answer

91 x 10 Nm¯²

Answer

None of these

Question 8

8. Suitable impurities are added to a semiconductor depending on its use. This is due to:

Answer

Increase its electrical resistivity

Answer

Increase its life

Answer

Enable it to Telerate higher voltage

Answer

Increases its electrical conductivity

Question 9

9. At room temperature, a p-type semi-conductor has

Answer

Large number of free electrons and few holes

Answer

Equal number of free electrons and holes

Answer

Large number of holes and electrons

Answer

Large number of holes and few electrons

Question 10

10. In n-type substances, the minority carriers are

Answer

None of these

Question 11

11. In semiconductors at a room temperature

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Answer

The valence band is completely filled and the conduction band is partially filled

Question 12

12. The simplest type of rectification known as half wave rectification is obtained by

Answer

Using a Coolidge tube

Answer

Suppressing half wave of A.C supply by using diode

Answer

Suppressing the harmonics in A.C voltage

Answer

Using a transistor

Question 13

13. Reverse bias applied on a junction diode

Answer

Increases the majority carrier current

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Answer

Lowers the potential barrier

Question 14

14. A diode as a rectifier converts:

Answer

D.C. into A.C.

Answer

High voltage to low voltage

Answer

Low voltage to high voltage

Answer

A.C. into D.C.

Question 15

15. The electrons in the outermost shell of an atom are called

Answer

None of these

Answer

Free electrons

Answer

Valence electrons

Answer

Tightly bound electrons

Question 16

16. The ratio β represents

Question 17

17. Photodiode is used for

Answer

None of these

Answer

Emission of light

Answer

Detection of light

Answer

Light display

Question 18

18. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Potential barrier in depletion layer remains unchanged

Answer

Diode is reverse biased

Answer

Diode is forward based

Answer

Potential barrier in depletion layer increases

Question 19

19. When a pentavalent material like As, is added to tetravalent material l.e. Ge, we get a

Answer

Super conductor

Answer

P-type material

Answer

Semiconductor

Answer

N-type material

Question 20

20. The width of a depletion layer in a p-n junction is

Answer

Is independent of voltage

Answer

Decreased by reverse biasing

Answer

Increased by reverse biasing

Answer

Increased by forward biasing

Question 21

21. The units of modulus of elasticity are same as that of

Answer

None of these

Question 22

22. Semi-conductors with donor atoms and free electrons belong to the type

Answer

any of above

Question 23

23. Depletion layer consists of

Answer

Mobile ions

Answer

Immobile ions

Question 24

24. The forward resistance of the diode is

Answer

None of these

Question 25

25. NAND gate is

Answer

Not a universal gate

Answer

A basic gate

Answer

A basic universal gate

Answer

A universal gate

Question 26

26. In junction diode, the holes are because of:

Answer

Extra electrons

Answer

Missing electrons

Question 27

27. The part of a transistor, which is heavily doped to produce a large number of majority carriers, is

Answer

None of these

Question 28

28. The operation of a transistor requires

Answer

That the emitter be heated

Answer

That the base be heated

Answer

None of these

Answer

That the collector be heated

Question 29

29. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 30

30. The potential difference across the depletion region of silicon is

Question 31

31. In a junction diode, the holes are due to

Answer

Extra electrons

Answer

Missing of electrons

Question 32

32. Radio waves of constant amplitude can be generated with

Answer

Oscillator

Question 33

33. Semi-conductor germanium and silicon are

Answer

Pentavalent

Answer

Tetravalent

Question 34

34. The switch is open when the resistance between C and E becomes

Answer

None of these

Answer

Almost zero

Question 35

35. Which logic gate is represented by following diagram?

Question 36

36. In a PN junction

Answer

High potential at P side and low potential at N side

Answer

Undetermined

Answer

P and N both are at same potential

Answer

High potential at N side and low potential at P side

Question 37

37. The thickness of the base is equal to

Answer

Mean of thickness of emitter and collector

Answer

Thickness of collector

Answer

Thickness of emitter

Answer

Very small as compared to the thickness of emitter and collector

Question 38

38. Due to the break down the p-n junction suffers

Answer

None of these

Answer

Require more current

Answer

Works efficiently

Question 39

39. Zener breakdown in a semiconductor diode occurs when

Answer

Potential barrier is reduced to zero

Answer

Reverse bias exceeds certain value

Answer

Forward bias exceeds certain value

Answer

Forward current exceeds certain value

Question 40

40. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 41

41. In n-p-n transistor, p works as

Answer

Any of above

Question 42

42. In Germanium crystal, impurity donor elements have valiancy

Question 43

43. The least doped region in a transistor is

Question 44

44. If on increasing temperature the resistance decreases, then it is

Answer

Semiconductor

Answer

None of these

Answer

Superconductor

Question 45

45. When we apply reverse bias to a junction diode, it

Answer

Lowers the potential barrier

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Answer

Increase the majority carrier current

Question 46

46. When NPN transistor is used as an amplifier

Answer

Holes move from base to emitter

Answer

Electrons move from emitter to base

Answer

Electrons move from base to emitter

Answer

Electrons move from collector to base

Question 47

47. What input values will cause an AND logic gate to produce a HIGH output?

Answer

At least one input is HIGH

Answer

All inputs are LOW

Answer

All inputs are HIGH

Answer

At least one input is LOW

Question 48

48. To use a transistor as an amplifier

Answer

No bias voltages are required

Answer

Both junctions are reverse biased

Answer

Both junctions are forward biased

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Question 49

49. The ratio of applied stress to volumetric strain is called

Answer

Bulk modulus

Answer

Young’s modulus

Answer

None of these

Answer

Shear modulus

Question 50

50. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 51

51. The width of a depletion layer in a p-n junction is

Answer

Is independent of voltage

Answer

Increased by reverse biasing

Answer

Increased by forward biasing

Answer

Decreased by reverse biasing

Question 52

52. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

Or gates and NOT gates

Answer

OR gates only

Answer

AND gates, OR gates, and NOT gates

Answer

AND gates and NOT gates

Question 53

53. A diode as a rectifier converts:

Answer

A.C. into D.C.

Answer

D.C. into A.C.

Answer

High voltage to low voltage

Answer

Low voltage to high voltage

Question 54

54. Reverse bias applied on a junction diode

Answer

Increase the minority carrier current

Answer

Increases the majority carrier current

Answer

Lowers the potential barrier

Answer

Raises the potential barrier

Question 55

55. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 56

56. A signal applied at the non-inverting input, of an O.P that appears after amplification at the output terminal, with

Answer

90° Phase shift

Answer

No Phase shift

Answer

180° Phase shift

Answer

120° Phase shift

Question 57

57. A NAND gate has:

Answer

LOW inputs and a LOW output

Answer

LOW inputs and a HIGH output

Answer

None of these

Answer

HIGH inputs and a HIGH output

Question 58

58. The electrical circuit used to have smooth DC output from a rectifier circuit is called

Answer

Oscillator

Answer

Logic gates

Question 59

59. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 60

60. In a p-type semiconductor germanium is doped with:

Answer

All of these

Question 61

61. When an alternating accelerating field is applied to a charge it produces

Answer

Electromagnetic Waves

Answer

Transverse Waves

Answer

Gamma Rays

Question 62

62. In semiconductors at a room temperature

Answer

The valence band is completely filled

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is partially empty and the conduction band is partially filled

Question 63

63. When a p-n junction diode is reverse biased, the flow of current across the junction is mainly due to

Answer

Drift of charges

Answer

Depends upon the nature of material

Answer

Diffusion of charges

Answer

Both drift and diffusion of charges

Question 64

64. The working of transistor as amplifier is similar to

Answer

Step up transformer

Answer

Step down transformer

Answer

Three diodes in common

Answer

Triode vacuum tube

Answer 172

Enable it to Telerate higher voltage

Answer 173

Increase its life

Answer 174

Increase its electrical resistivity

Answer 175

Increase its electrical conductivity

Answer 176

Compress ional stress

Answer 177

Shear stress

Answer 178

None of these

Answer 179

Tensile stress

Answer 180

Several mega ohms

Answer 181

None of these

Answer 182

Microsecond

Answer 183

Millisecond

Answer 184

Nanosecond

Answer 185

None of these

Answer 186

It offers a very low open loop gain all of above

Answer 187

It offers a very low output resistance

Answer 188

It offers a very high inputs resistance to the input current

Answer 189

Zero amplitude

Answer 190

Variable amplitude

Answer 191

Constant amplitude

Answer 192

Unit amplitude

Answer 193

All of these

Answer 194

Magnification

Answer 195

Amplification

Answer 196

Rectification

Answer 197

Major current carriers are mobile negative ions

Answer 198

Major current carriers are mobile holes

Answer 199

Major current carriers are electrons

Answer 200

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 201

Holes move from base to collector

Answer 202

Negative charge moves from collector to base

Answer 203

Holes move from emitter to base

Answer 204

Negative charge moves from emitter to base

Answer 205

Its conductivity increases with rise of temperature

Answer 206

It has high resistance to the current flow when reverse biased

Answer 207

It has low resistance to the current flow when forward biased

Answer 208

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 209

Almost negligible

Answer 210

Less than one

Answer 211

Greater than one

Answer 212

Equal to one

Answer 213

Inverting terminal is at high potential

Answer 214

Non-inverting terminal is at high potential

Answer 215

Both are at the same potential

Answer 216

Both are at the high potential

Answer 217

Virtual input

Answer 218

Reference voltage on the other

Answer 219

Non-inverting voltage at output

Answer 220

Heat energy

Answer 221

Light energy

Answer 222

Chemical energy

Answer 223

None of these

Answer 224

Transformers

Answer 225

Electric generations

Answer 226

Electric motors

Answer 227

None of these

Answer 228

Bulk’s modulus

Answer 229

Young’s modulus

Answer 230

Modulus of electricity

Answer 231

Large number of holes and electrons

Answer 232

Equal number of free electrons and holes

Answer 233

Large number of free electrons and few holes

Answer 234

Large number of holes and few electrons

Answer 235

Insulators

Answer 236

Superconductors

Answer 237

Semiconductors

Answer 238

Oscillator

Answer 239

None of these

Answer 240

If either or both inputs are 1

Answer 241

Only if both inputs are 1

Answer 242

If both inputs are zero

Answer 243

If either input is zero

Answer 244

p-type semiconductor

Answer 245

p-type conductor

Answer 246

n-type conductor

Answer 247

n-type semiconductor

Answer 248

None of these

Answer 249

Major current carriers are mobile negative ions

Answer 250

Major current carriers are electrons

Answer 251

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 252

Major current carriers are mobile holes

Answer 253

n-carriers and p-carriers respectively

Answer 254

n-carriers only

Answer 255

p-carriers only

Answer 256

p-carriers and n-carriers respectively

Answer 257

P-type material

Answer 258

Switching device

Answer 259

Remains unchanged

Answer 260

Decreases and then increases

Answer 261

Semiconductor

Answer 262

None of these

Answer 263

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 264

From pure Ge crystal

Answer 265

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 266

From pure Si crystal

Answer 267

Majority carriers

Answer 268

Minority carriers

Answer 269

Dual carriers

Answer 270

Capacitor is used

Answer 271

Solvent is used

Answer 272

None of these

Answer 273

Resistor is used

Answer 274

Phosphorus

Answer 275

None of these

Answer 276

Low degree resistor

Answer 277

Low degree radiations

Answer 278

Light dependent resistance

Answer 279

Doping density

Answer 280

Diode design

Answer 281

Forward bias

Answer 282

Temperature

Answer 283

Major carrier is mobile holes

Answer 284

Major carrier is mobile negative ions

Answer 285

Major current carrier is electrons

Answer 286

The number of mobile holes exceeds the number of acceptors

Answer 287

Both collector and emitter are positive with respect to the base

Answer 288

Collector is positive and emitter is negative with respect to the base

Answer 289

Collector is positive and emitter is at negative potential as the base

Answer 290

Both collector and emitter are negative with respect to the base

Answer 291

Only half cycle is used

Answer 292

Current flows in pulses

Answer 293

None of these

Answer 294

Current flows in one directions

Answer 295

Man hundred

Answer 296

None of these

Answer 297

Phosphorus

Answer 298

Conductors

Answer 299

Insulators

Answer 300

Superconductors

Answer 301

Semiconductors

Answer 302

Electrons move from base to collector

Answer 303

Holes move from emitter be base

Answer 304

Holes move from emitter to base

Answer 305

Holes move from base to emitter

Answer 306

Glassy solids

Answer 307

Crystalline solids

Answer 308

Amorphous solids

Answer 309

Polymeric solids

Answer 310

All of above

Answer 311

Band levels

Answer 312

Hidden energy states

Answer 313

Forbidden energy states

Answer 314

None of these

Answer 315

Comparator

Answer 316

INVERTER gate

Answer 317

A rectifier

Answer 318

An amplifier

Answer 319

Filtering circuit

Answer 320

In forward bias

Answer 321

In reverse bias

Answer 322

None of these

Answer 323

may be p-type or n-type

Answer 324

None of these

Answer 325

Transistor

Answer 326

Electrons and holes

Answer 327

Protons and electrons

Answer 328

Electrons and protons

Answer 329

Holes and electrons

Answer 330

Resistance of copper increases while that of germanium decreases

Answer 331

Resistance of both decreases

Answer 332

Resistance of copper decreases while that of germanium increases

Answer 333

Resistance of both increases

Answer 334

N-type conductor

Answer 335

None of these

Answer 336

N-type semiconductor

Answer 337

P-type semiconductor

Answer 338

A very low input impedance

Answer 339

None of these

Answer 340

A low output impedance

Answer 341

A very high input impedance

Answer 342

Conduction band is filled with electrons and valence bad is empty

Answer 343

Conduction band is partially filled with electrons

Answer 344

Conduction band is empty and valence band is filled with electrons

Answer 345

Valence band is partially filled with electrons

Answer 346

P-type material

Answer 347

Oscillator

Answer 348

10¯⁶ cm

Answer 349

10¯¹² cm

Answer 350

Common collector configuration

Answer 351

Common emitter configuration

Answer 352

None of these

Answer 353

Common base configuration

Answer 354

Superconductor

Answer 355

Logic gates

Answer 356

Detection of visible and invisible radiations

Answer 357

None of these

Answer 358

Automatic switching

Answer 359

Can be any of the above three

Answer 360

Number of electrons and holes remains same

Answer 361

Number of electrons and holes increases equally

Answer 362

Number of holes increases while that of holes decreases

Answer 363

Number of electrons increases while that of holes decreases

Answer 364

Electric field is zero

Answer 365

Electric field is maximum

Answer 366

Potential is zero

Answer 367

Potential is maximum

Answer 368

p-type conductor

Answer 369

n-type conductor

Answer 370

n-type semiconductor

Answer 371

p-type semiconductor

Answer 372

Two PN-junctions

Answer 373

One PN-junction

Answer 374

Three PN-junctions

Answer 375

Four PN-junctions

Answer 376

Each of them decreases

Answer 377

Each of them increases

Answer 378

Copper decreases and germanium increases

Answer 379

Copper increases and germanium decreases

Answer 380

Electric field is zero

Answer 381

Potential is zero

Answer 382

Potential is maximum

Answer 383

Electric field is maximum

Answer 384

Diode is reverse biased

Answer 385

Diode is neutralized

Answer 386

Diode is forward biased

Answer 387

None of these

Answer 388

Conduction band is empty and valence band is filled with electrons

Answer 389

Valence band is partially filled with electrons

Answer 390

Conduction band is partially filled with electrons

Answer 391

Conduction band is filled with electrons and valence band is empty

Answer 392

Each of them increases

Answer 393

Copper increases and germanium decreases

Answer 394

Copper decreases and germanium increases

Answer 395

Each of them decreases

Answer 396

Negative charge moves from emitter to base

Answer 397

Negative charge moves from collector to base

Answer 398

Holes move from emitter to base

Answer 399

Holes move from base to collector

Answer 400

When temperature varies

Answer 401

During the manufacturing process

Answer 402

Under reverse bias

Answer 403

Under forward bias

Answer 404

Remains same

Answer 405

Logic gates

Answer 406

Oscillator

Answer 407

Less than electrons

Answer 408

Equal to electrons

Answer 409

Greater than electrons

Answer 410

n-type conductor

Answer 411

n-type semiconductor

Answer 412

p-type conductor

Answer 413

p-type semiconductor

Answer 414

Free electrons in n-type and holes in p-type

Answer 415

Holes in n-type and free electrons in p-type

Answer 416

Free electrons in n-type and p-type

Answer 417

Holes in n-type and p-type

Answer 418

Either emitter or collector

Answer 419

Phosphorus

Answer 420

None of these

Answer 421

Full wave rectifier

Answer 422

Half wave rectifier

Answer 423

None of these

Answer 424

Holes move from base to emitter

Answer 425

Holes move from emitter to base

Answer 426

Holes move from emitter to base

Answer 427

Electrons move from base to collector

Answer 428

Off switch

Answer 429

Input and out signals are in phase

Answer 430

May be in phase or not

Answer 431

Input and out signals are not in phase

Answer 432

None of these

Answer 433

None of these

Answer 434

Charged region

Answer 435

Depletion region

Answer 436

Diffusion region

Answer 437

Voltage gain

Answer 438

None of these

Answer 439

Input resistance

Answer 440

Current gain

Answer 441

Superconductors

Answer 442

Insulators

Answer 443

Semiconductors

Answer 444

None of these

Answer 445

Forward biases

Answer 446

Reverse biased

Answer 447

First A and B

Answer 448

Remains constant

Answer 449

Remain fixed

Answer 450

Suddenly increases

Answer 451

Decreases slowly

Answer 452

Increases slowly

Answer 453

Any of the above depending on nature of transistor

Answer 454

Positively charged

Answer 455

None of these

Answer 456

Negative charged

Answer 457

Opposes the input signal

Answer 458

Aids the input signal

Answer 459

Is proportional to output current

Answer 460

Is proportional to differential voltage gain

Answer 461

None of these

Answer 462

Both A.C. & D.C.

Answer 463

Any of above

Answer 464

Equal to emitter current

Answer 465

Slightly less than emitter current

Answer 466

Greater than emitter current

Answer 467

Semiconductor

Answer 468

None of these

Answer 469

Solar cells

Answer 470

The switch

Answer 471

The light emitting diode

Answer 472

The photo diodes

Answer 473

Can be any of the above three

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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