Physics Electronics Online Mcqs Test

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Question 1

1. In a good conductor, the energy gap between the conduction band and the valence band is

Question 2

2. A device which converts an alternating current to direct current is called

Answer

Oscillator

Answer

P-type material

Question 3

3. Conversion of low input a.c. into high output a.c. is called:

Answer

Rectification

Answer

Magnification

Answer

Amplification

Answer

All of these

Question 4

4. A single transistor can be used to build which of the following digital logic gates?

Answer

NAND gates

Question 5

5. Application of photodiode is/are

Answer

Logic gates

Answer

Automatic switching

Answer

Detection of visible and invisible radiations

Answer

None of these

Question 6

6. In Germanium crystal, impurity donor elements have valiancy

Question 7

7. The critical temperature for mercury is

Question 8

8. The width of a depletion layer in a p-n junction is

Answer

Increased by reverse biasing

Answer

Increased by forward biasing

Answer

Decreased by reverse biasing

Answer

Is independent of voltage

Question 9

9. What input values will cause an AND logic gate to produce a HIGH output?

Answer

All inputs are LOW

Answer

All inputs are HIGH

Answer

At least one input is HIGH

Answer

At least one input is LOW

Question 10

10. In p-n-p transistor the collector current is

Answer

Slightly less than emitter current

Answer

Equal to emitter current

Answer

Greater than emitter current

Answer

Any of above

Question 11

11. A diode as a rectifier converts:

Answer

Low voltage to high voltage

Answer

High voltage to low voltage

Answer

A.C. into D.C.

Answer

D.C. into A.C.

Question 12

12. Acceptor and donor impurities donate

Answer

p-carriers and n-carriers respectively

Answer

p-carriers only

Answer

n-carriers and p-carriers respectively

Answer

n-carriers only

Question 13

13. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Potential is zero

Answer

Electric field is maximum

Answer

Potential is maximum

Answer

Electric field is zero

Question 14

14. The gain A of the amplifier is of the order of

Answer

None of these

Answer

Man hundred

Question 15

15. In reverse biasing of p-n junction, the resistance offered by the diode is of the order of

Answer

Several mega ohms

Question 16

16. If p-type material of the PN-junction is connected with positive terminal of the battery and n-type material with negative terminal of the battery, it is said to be

Answer

Zero biased

Answer

Reversed biased

Answer

None of these

Answer

Forward biased

Question 17

17. In the transistor schematic symbol, the arrow

Answer

Is located on the emitter

Answer

Is locate on the collector

Answer

Is located on the base

Answer

Point from north to south

Question 18

18. Which one is forward bias?

Question 19

19. NAND gate is

Answer

A basic universal gate

Answer

A basic gate

Answer

A universal gate

Answer

Not a universal gate

Question 20

20. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

Diode is reverse biased

Answer

Diode is forward biased

Answer

None of these

Answer

Diode is neutralized

Question 21

21. In a P-type semiconductor

Answer

The no. of mobile holes exceeds the no. of mobile acceptors

Answer

Major current carriers are electrons

Answer

Major current carriers are mobile holes

Answer

Major current carriers are mobile negative ions

Question 22

22. When no light is incident on photodiode, the reverse current is

Answer

Almost negligible

Question 23

23. When arsenic is added as an impurity to silicon, the resulting material is

Answer

N-type conductor

Answer

N-type semiconductor

Answer

None of these

Answer

P-type semiconductor

Question 24

24. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 25

25. When we apply reverse bias to a junction diode, it

Answer

Increase the majority carrier current

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Answer

Lowers the potential barrier

Question 26

26. The operation of a transistor requires

Answer

That the emitter be heated

Answer

That the collector be heated

Answer

None of these

Answer

That the base be heated

Question 27

27. When the conductivity of a semiconductor is only due, to breaking of covalent bonds, the semiconductor is called

Question 28

28. When Ge crystal is doped with phosphorus atom, then it becomes

Answer

Superconductor

Question 29

29. With negative feedback, the returning signal:

Answer

Is proportional to differential voltage gain

Answer

Aids the input signal

Answer

Opposes the input signal

Answer

Is proportional to output current

Question 30

30. In p-type semi-conductor, the majority charge carriers are

Question 31

31. Semi-conductor germanium and silicon are

Answer

Pentavalent

Answer

Tetravalent

Question 32

32. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 33

33. The energy band gap is maximum in

Answer

Semiconductors

Answer

Superconductors

Answer

Insulators

Question 34

34. Reverse bias applied on a junction diode

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Answer

Lowers the potential barrier

Answer

Increases the majority carrier current

Question 35

35. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Potential barrier in depletion layer increases

Answer

Diode is reverse biased

Answer

Potential barrier in depletion layer remains unchanged

Answer

Diode is forward based

Question 36

36. n-type germanium is obtained on doping intrinsic germanium with

Answer

Phosphorus

Question 37

37. The least doped region in a transistor is

Question 38

38. Due to the break down the p-n junction suffers

Answer

Require more current

Answer

None of these

Answer

Works efficiently

Question 39

39. The thickness of the base is equal to

Answer

Mean of thickness of emitter and collector

Answer

Thickness of emitter

Answer

Very small as compared to the thickness of emitter and collector

Answer

Thickness of collector

Question 40

40. To use a transistor as an amplifier

Answer

Both junctions are reverse biased

Answer

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer

Both junctions are forward biased

Answer

No bias voltages are required

Question 41

41. The p-n junction diode works as insulator, if connected

Answer

In forward bias

Answer

In reverse bias

Answer

None of these

Question 42

42. If a signal passing through a gate is inhibited by sending a low into one of the inputs, and the output is HIGH, the gate is a(n):

Question 43

43. On increasing the reverse bias to a large value in a p-n junction diode current

Answer

Remain fixed

Answer

Suddenly increases

Answer

Decreases slowly

Answer

Increases slowly

Question 44

44. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

n-type conductor

Answer

p-type semiconductor

Answer

p-type conductor

Question 45

45. When NPN transistor is used as an amplifier

Answer

Electrons move from collector to base

Answer

Holes move from base to emitter

Answer

Electrons move from emitter to base

Answer

Electrons move from base to emitter

Question 46

46. The forward resistance of the diode is

Answer

None of these

Question 47

47. In semiconductors at a room temperature

Answer

The valence band is completely filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled and the conduction band is partially filled

Question 48

48. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 49

49. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of both decreases

Answer

Resistance of copper decreases while that of germanium increases

Answer

Resistance of both increases

Question 50

50. The device or circuit used for conversion of A.C. into D.C. is called

Answer

A rectifier

Answer

An amplifier

Answer

Filtering circuit

Question 51

51. The number of junctions in the PNP transistor are

Question 52

52. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Protons and electrons

Answer

Holes and electrons

Answer

Electrons and protons

Answer

Electrons and holes

Question 53

53. A diode as a rectifier converts:

Answer

Low voltage to high voltage

Answer

A.C. into D.C.

Answer

D.C. into A.C.

Answer

High voltage to low voltage

Question 54

54. In p – n junction, after diffusion, a charge less region is formed around the junction is called

Answer

None of these

Answer

Depletion region

Answer

Charged region

Answer

Diffusion region

Question 55

55. In a n-p-n transistor:

Answer

Negative charge moves from collector to base

Answer

Holes move from emitter to base

Answer

Negative charge moves from emitter to base

Answer

Holes move from base to collector

Question 56

56. In a PN junction

Answer

High potential at N side and low potential at P side

Answer

Undetermined

Answer

P and N both are at same potential

Answer

High potential at P side and low potential at N side

Question 57

57. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 58

58. When an alternating accelerating field is applied to a charge it produces

Answer

Gamma Rays

Answer

Transverse Waves

Answer

Electromagnetic Waves

Question 59

59. Light emitting diode work when it is

Answer

None of these

Answer

Reverse biased

Answer

Forward biases

Question 60

60. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 61

61. Photovoltaic cell produces electrical energy from

Answer

Heat energy

Answer

Chemical energy

Answer

Light energy

Answer

None of these

Question 62

62. Depletion region of a junction is formed

Answer

When temperature varies

Answer

Under forward bias

Answer

During the manufacturing process

Answer

Under reverse bias

Question 63

63. The energy band gap is maximum in

Answer

Insulators

Answer

Superconductors

Answer

Semiconductors

Question 64

64. The output will be a LOW for any case when one or more inputs are zero in a(n):

Answer 170

Increases the majority carrier current

Answer 171

Lowers the potential barrier

Answer 172

Increase the minority carrier current

Answer 173

Raises the potential barrier

Answer 174

Conduction band is empty and valence band is filled with electrons

Answer 175

Valence band is partially filled with electrons

Answer 176

Conduction band is partially filled with electrons

Answer 177

Conduction band is filled with electrons and valence band is empty

Answer 178

None of these

Answer 179

Unit amplitude

Answer 180

Constant amplitude

Answer 181

Zero amplitude

Answer 182

Variable amplitude

Answer 183

Forward bias

Answer 184

Diode design

Answer 185

Temperature

Answer 186

Doping density

Answer 187

None of these

Answer 188

Holes move from emitter to base

Answer 189

Electrons move from base to collector

Answer 190

Holes move from emitter be base

Answer 191

Holes move from base to emitter

Answer 192

Voltage gain

Answer 193

None of these

Answer 194

Current gain

Answer 195

Input resistance

Answer 196

Half wave rectifier

Answer 197

Full wave rectifier

Answer 198

Positively charged

Answer 199

None of these

Answer 200

Negative charged

Answer 201

Transformers

Answer 202

Electric generations

Answer 203

Electric motors

Answer 204

Remains same

Answer 205

None of these

Answer 206

Using a Coolidge tube

Answer 207

Suppressing half wave of A.C supply by using diode

Answer 208

Using a transistor

Answer 209

Suppressing the harmonics in A.C voltage

Answer 210

First A and B

Answer 211

Remains constant

Answer 212

Common base configuration

Answer 213

None of these

Answer 214

Common emitter configuration

Answer 215

Common collector configuration

Answer 216

Number of electrons and holes increases equally

Answer 217

Number of electrons and holes remains same

Answer 218

Number of electrons increases while that of holes decreases

Answer 219

Number of holes increases while that of holes decreases

Answer 220

None of these

Answer 221

Both A.C. & D.C.

Answer 222

Oscillator

Answer 223

Multivibrator

Answer 224

Dual carriers

Answer 225

Majority carriers

Answer 226

Minority carriers

Answer 227

None of these

Answer 228

Valence electrons

Answer 229

Free electrons

Answer 230

Tightly bound electrons

Answer 231

None of these

Answer 232

Conductors

Answer 233

Semiconductors

Answer 234

Insulators

Answer 235

Superconductors

Answer 236

None of these

Answer 237

Shear stress

Answer 238

Tensile stress

Answer 239

Compress ional stress

Answer 240

Missing electrons

Answer 241

Extra electrons

Answer 242

Both collector and emitter are negative with respect to the base

Answer 243

Collector is positive and emitter is at negative potential as the base

Answer 244

Both collector and emitter are positive with respect to the base

Answer 245

Collector is positive and emitter is negative with respect to the base

Answer 246

Enable it to Telerate higher voltage

Answer 247

Increase its life

Answer 248

Increase its electrical resistivity

Answer 249

Increase its electrical conductivity

Answer 250

None of these

Answer 251

Oscillator

Answer 252

Logic gates

Answer 253

Semiconductor

Answer 254

None of these

Answer 255

All of these

Answer 256

Crystal lattice

Answer 257

180° Phase shift

Answer 258

90° Phase shift

Answer 259

120° Phase shift

Answer 260

No Phase shift

Answer 261

None of these

Answer 262

Oscillator

Answer 263

Young’s modulus

Answer 264

None of these

Answer 265

Shear modulus

Answer 266

Bulk modulus

Answer 267

Two PN-junctions

Answer 268

Four PN-junctions

Answer 269

One PN-junction

Answer 270

Three PN-junctions

Answer 271

Remains unchanged

Answer 272

Decreases and then increases

Answer 273

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 274

From pure Si crystal

Answer 275

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 276

From pure Ge crystal

Answer 277

Valence band is partially filled with electrons

Answer 278

Conduction band is empty and valence band is filled with electrons

Answer 279

Conduction band is partially filled with electrons

Answer 280

Conduction band is filled with electrons and valence bad is empty

Answer 281

Major current carriers are electrons

Answer 282

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 283

Major current carriers are mobile holes

Answer 284

Major current carriers are mobile negative ions

Answer 285

Large number of free electrons and few holes

Answer 286

Large number of holes and electrons

Answer 287

Large number of holes and few electrons

Answer 288

Equal number of free electrons and holes

Answer 289

Either emitter or collector

Answer 290

Step down transformer

Answer 291

Three diodes in common

Answer 292

Step up transformer

Answer 293

Triode vacuum tube

Answer 294

Semiconductor

Answer 295

N-type material

Answer 296

P-type material

Answer 297

Super conductor

Answer 298

Potential is zero

Answer 299

Electric field is zero

Answer 300

Electric field is maximum

Answer 301

Potential is maximum

Answer 302

None of these

Answer 303

A very high input impedance

Answer 304

A very low input impedance

Answer 305

A low output impedance

Answer 306

Negative charge moves from collector to base

Answer 307

Holes move from emitter to base

Answer 308

Holes move from base to collector

Answer 309

Negative charge moves from emitter to base

Answer 310

Any of the above depending on nature of transistor

Answer 311

INVERTER gate

Answer 312

Comparator

Answer 313

Electrons move from base to collector

Answer 314

Holes move from emitter to base

Answer 315

Holes move from emitter to base

Answer 316

Holes move from base to emitter

Answer 317

None of these

Answer 318

May be in phase or not

Answer 319

Input and out signals are in phase

Answer 320

Input and out signals are not in phase

Answer 321

Bulk’s modulus

Answer 322

Modulus of electricity

Answer 323

Young’s modulus

Answer 324

None of these

Answer 325

p-type semiconductor

Answer 326

n-type semiconductor

Answer 327

p-type conductor

Answer 328

n-type conductor

Answer 329

All of these

Answer 330

Crystalline solids

Answer 331

Glassy solids

Answer 332

Polymeric solids

Answer 333

Amorphous solids

Answer 334

OR gates only

Answer 335

AND gates, OR gates, and NOT gates

Answer 336

AND gates and NOT gates

Answer 337

Or gates and NOT gates

Answer 338

Immobile ions

Answer 339

Mobile ions

Answer 340

None of these

Answer 341

Resistor is used

Answer 342

Capacitor is used

Answer 343

Solvent is used

Answer 344

Any of above

Answer 345

Major carrier is mobile negative ions

Answer 346

Major carrier is mobile holes

Answer 347

Major current carrier is electrons

Answer 348

The number of mobile holes exceeds the number of acceptors

Answer 349

Each of them decreases

Answer 350

Copper increases and germanium decreases

Answer 351

Each of them increases

Answer 352

Copper decreases and germanium increases

Answer 353

HIGH inputs and a HIGH output

Answer 354

None of these

Answer 355

LOW inputs and a LOW output

Answer 356

LOW inputs and a HIGH output

Answer 357

Can be any of the above three

Answer 358

None of these

Answer 359

Almost zero

Answer 360

None of these

Answer 361

It offers a very low output resistance

Answer 362

It offers a very low open loop gain all of above

Answer 363

It offers a very high inputs resistance to the input current

Answer 364

None of these

Answer 365

None of these

Answer 366

110 Nm¯²

Answer 367

70 x 10 Nm¯²

Answer 368

91 x 10 Nm¯²

Answer 369

Enable it to Telerate higher voltage

Answer 370

Increases its electrical conductivity

Answer 371

Increase its electrical resistivity

Answer 372

Increase its life

Answer 373

Inverting terminal is at high potential

Answer 374

Both are at the same potential

Answer 375

Non-inverting terminal is at high potential

Answer 376

Both are at the high potential

Answer 377

Solar cells

Answer 378

The light emitting diode

Answer 379

The switch

Answer 380

The photo diodes

Answer 381

Large number of holes and few electrons

Answer 382

Large number of holes and electrons

Answer 383

Equal number of free electrons and holes

Answer 384

Large number of free electrons and few holes

Answer 385

The valence band is completely filled

Answer 386

The valence band is partially empty and the conduction band is partially filled

Answer 387

The valence band is completely filled and the conduction band is partially filled

Answer 388

The conduction band is completely empty

Answer 389

Light display

Answer 390

None of these

Answer 391

Detection of light

Answer 392

Emission of light

Answer 393

Greater than one

Answer 394

Less than one

Answer 395

Equal to one

Answer 396

If either or both inputs are 1

Answer 397

Only if both inputs are 1

Answer 398

If both inputs are zero

Answer 399

If either input is zero

Answer 400

None of these

Answer 401

Superconductor

Answer 402

Semiconductor

Answer 403

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 404

It has high resistance to the current flow when reverse biased

Answer 405

It has low resistance to the current flow when forward biased

Answer 406

Its conductivity increases with rise of temperature

Answer 407

All of above

Answer 408

Off switch

Answer 409

Current flows in pulses

Answer 410

None of these

Answer 411

Current flows in one directions

Answer 412

Only half cycle is used

Answer 413

Virtual input

Answer 414

Reference voltage on the other

Answer 415

Non-inverting voltage at output

Answer 416

None of these

Answer 417

Low degree radiations

Answer 418

Light dependent resistance

Answer 419

Low degree resistor

Answer 420

Can be any of the above three

Answer 421

P-type material

Answer 422

Switching device

Answer 423

any of above

Answer 424

Greater than electrons

Answer 425

Less than electrons

Answer 426

Equal to electrons

Answer 427

Holes in n-type and free electrons in p-type

Answer 428

Holes in n-type and p-type

Answer 429

Free electrons in n-type and p-type

Answer 430

Free electrons in n-type and holes in p-type

Answer 431

n-type semiconductor

Answer 432

p-type semiconductor

Answer 433

p-type conductor

Answer 434

n-type conductor

Answer 435

10¯⁶ cm

Answer 436

10¯¹² cm

Answer 437

Forward bias exceeds certain value

Answer 438

Potential barrier is reduced to zero

Answer 439

Forward current exceeds certain value

Answer 440

Reverse bias exceeds certain value

Answer 441

None of these

Answer 442

may be p-type or n-type

Answer 443

Oscillator

Answer 444

Missing of electrons

Answer 445

Extra electrons

Answer 446

Depends upon the nature of material

Answer 447

Both drift and diffusion of charges

Answer 448

Drift of charges

Answer 449

Diffusion of charges

Answer 450

Nanosecond

Answer 451

None of these

Answer 452

Millisecond

Answer 453

Microsecond

Answer 454

Phosphorus

Answer 455

None of these

Answer 456

Logic gates

Answer 457

Oscillator

Answer 458

Forbidden energy states

Answer 459

Hidden energy states

Answer 460

None of these

Answer 461

Band levels

Answer 462

Decreases and then increases

Answer 463

Remains unchanged

Answer 464

Missing electrons

Answer 465

Extra electrons

Answer 466

Increased by forward biasing

Answer 467

Is independent of voltage

Answer 468

Decreased by reverse biasing

Answer 469

Increased by reverse biasing

Answer 470

Each of them increases

Answer 471

Copper increases and germanium decreases

Answer 472

Copper decreases and germanium increases

Answer 473

Each of them decreases

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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Physics Electronics Online Mcqs Test

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