Physics Electronics Online Mcqs Test

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Question 1

1. p-n junction when reversed biased acts as a

Answer

Off switch

Question 2

2. In p – n junction, after diffusion, a charge less region is formed around the junction is called

Answer

Diffusion region

Answer

Depletion region

Answer

Charged region

Answer

None of these

Question 3

3. In insulators

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Question 4

4. In common emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 5

5. When n-p-n transistor is used as an amplifier

Answer

Electrons move from base to collector

Answer

Holes move from emitter be base

Answer

Holes move from base to emitter

Answer

Holes move from emitter to base

Question 6

6. To obtain a p-type germanium semiconductor, it must be doped with

Answer

Phosphorus

Question 7

7. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 8

8. A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of

Answer

Copper decreases and germanium increases

Answer

Each of them increases

Answer

Copper increases and germanium decreases

Answer

Each of them decreases

Question 9

9. In p-n-p transistor the collector current is

Answer

Greater than emitter current

Answer

Any of above

Answer

Equal to emitter current

Answer

Slightly less than emitter current

Question 10

10. A signal applied at the non-inverting input, of an O.P that appears after amplification at the output terminal, with

Answer

120° Phase shift

Answer

90° Phase shift

Answer

180° Phase shift

Answer

No Phase shift

Question 11

11. Barrier potential of a p-n junction diode does not depend on:

Answer

Diode design

Answer

Forward bias

Answer

Doping density

Answer

Temperature

Question 12

12. When aluminum is added as an impurity to silicon, then resulting material is

Answer

n-type semiconductor

Answer

p-type semiconductor

Answer

n-type conductor

Answer

p-type conductor

Question 13

13. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

Diode is forward biased

Answer

None of these

Answer

Diode is neutralized

Answer

Diode is reverse biased

Question 14

14. In semiconductors at a room temperature

Answer

The valence band is completely filled

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Question 15

15. Zener breakdown in a semiconductor diode occurs when

Answer

Reverse bias exceeds certain value

Answer

Forward bias exceeds certain value

Answer

Forward current exceeds certain value

Answer

Potential barrier is reduced to zero

Question 16

16. The ratio β shows the

Answer

Input resistance

Answer

None of these

Answer

Current gain

Answer

Voltage gain

Question 17

17. In semiconductors at a room temperature

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The conduction band is completely empty

Answer

The valence band is completely filled

Answer

The valence band is completely filled and the conduction band is partially filled

Question 18

18. Arsenic, antimony or phosphorus are impurities of

Answer

None of these

Answer

may be p-type or n-type

Question 19

19. The output will be a LOW for any case when one or more inputs are zero in a(n):

Question 20

20. A substance which have empty conduction band is called

Answer

Semiconductor

Answer

None of these

Question 21

21. Depletion region of a junction is formed

Answer

Under reverse bias

Answer

When temperature varies

Answer

During the manufacturing process

Answer

Under forward bias

Question 22

22. The critical temperature for mercury is

Question 23

23. At absolute zero, Si acts as

Answer

None of these

Question 24

24. The number of junctions in the PNP transistor are

Question 25

25. Photovoltaic cell produces electrical energy from

Answer

None of these

Answer

Heat energy

Answer

Chemical energy

Answer

Light energy

Question 26

26. Symbol represents

Question 27

27. The gain A of the amplifier is of the order of

Answer

None of these

Answer

Man hundred

Question 28

28. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

AND gates, OR gates, and NOT gates

Answer

OR gates only

Answer

AND gates and NOT gates

Answer

Or gates and NOT gates

Question 29

29. Using OP-Amp as an inverting amplifier, the non-inverting terminal has potential

Answer

None of these

Question 30

30. When boron is added as an impurity to silicon, the resulting material is:

Answer

n-type semiconductor

Answer

p-type semiconductor

Answer

n-type conductor

Answer

p-type conductor

Question 31

31. A n-p-n transistor conducts when

Answer

Collector is positive and emitter is at negative potential as the base

Answer

Both collector and emitter are negative with respect to the base

Answer

Collector is positive and emitter is negative with respect to the base

Answer

Both collector and emitter are positive with respect to the base

Question 32

32. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 33

33. What input values will cause an AND logic gate to produce a HIGH output?

Answer

At least one input is LOW

Answer

All inputs are HIGH

Answer

All inputs are LOW

Answer

At least one input is HIGH

Question 34

34. Application of photodiode is/are

Answer

Detection of visible and invisible radiations

Answer

Logic gates

Answer

Automatic switching

Answer

None of these

Question 35

35. In comma emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 36

36. A transistor consists of

Answer

One PN-junction

Answer

Four PN-junctions

Answer

Three PN-junctions

Answer

Two PN-junctions

Question 37

37. The simplest type of rectification known as half wave rectification is obtained by

Answer

Suppressing the harmonics in A.C voltage

Answer

Suppressing half wave of A.C supply by using diode

Answer

Using a transistor

Answer

Using a Coolidge tube

Question 38

38. A non-inverting closed-loop op-amp circuit generally has a gain factor:

Answer

Equal to one

Answer

Less than one

Answer

Greater than one

Question 39

39. In a p-type semiconductor germanium is doped with:

Answer

All of these

Question 40

40. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Diode is forward based

Answer

Potential barrier in depletion layer increases

Answer

Potential barrier in depletion layer remains unchanged

Answer

Diode is reverse biased

Question 41

41. In n-p-n transistor, p works as

Answer

Any of above

Question 42

42. The impurity atoms with which a pure silicon should be doped to make a p-type semiconductor is

Answer

Phosphorus

Question 43

43. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Variable amplitude

Answer

Zero amplitude

Answer

Unit amplitude

Answer

Constant amplitude

Question 44

44. Non-inverting amplifier circuits have

Answer

A very low input impedance

Answer

A low output impedance

Answer

A very high input impedance

Answer

None of these

Question 45

45. Two inputs of NAND gates are shorted. This gate is equivalent to

Question 46

46. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Potential is maximum

Answer

Electric field is zero

Answer

Potential is zero

Answer

Electric field is maximum

Question 47

47. Transistor can be used as

Answer

Half wave rectifier

Answer

Full wave rectifier

Question 48

48. Output voltage in full wave rectification is not smooth. In order to have smooth output voltage

Answer

Capacitor is used

Answer

Resistor is used

Answer

None of these

Answer

Solvent is used

Question 49

49. A photodiode can turn its current ON and OFF in

Answer

Millisecond

Answer

Nanosecond

Answer

None of these

Answer

Microsecond

Question 50

50. When an alternating accelerating field is applied to a charge it produces

Answer

Electromagnetic Waves

Answer

Transverse Waves

Answer

Gamma Rays

Question 51

51. The electrical circuit used to bet smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 52

52. When the output of OR gate is 1

Answer

If either or both inputs are 1

Answer

If either input is zero

Answer

If both inputs are zero

Answer

Only if both inputs are 1

Question 53

53. Young’s modulus for copper is

Answer

70 x 10 Nm¯²

Answer

None of these

Answer

91 x 10 Nm¯²

Answer

110 Nm¯²

Question 54

54. n-type germanium is obtained on doping intrinsic germanium with

Answer

Phosphorus

Question 55

55. In a PN junction

Answer

P and N both are at same potential

Answer

High potential at N side and low potential at P side

Answer

Undetermined

Answer

High potential at P side and low potential at N side

Question 56

56. The energy gap between conduction band and valence band is order 0.07 eV. It is a

Answer

Semiconductor

Question 57

57. Identify the correct statement about minority carriers

Answer

Free electrons in n-type and p-type

Answer

Holes in n-type and free electrons in p-type

Answer

Free electrons in n-type and holes in p-type

Answer

Holes in n-type and p-type

Question 58

58. When n-p-n transistor is used as an amplifier,

Answer

Holes move from base to emitter

Answer

Electrons move from base to collector

Answer

Holes move from emitter to base

Answer

Holes move from emitter to base

Question 59

59. LDR means:

Answer

Low degree radiations

Answer

None of these

Answer

Light dependent resistance

Answer

Low degree resistor

Question 60

60. With negative feedback, the returning signal:

Answer

Aids the input signal

Answer

Is proportional to output current

Answer

Is proportional to differential voltage gain

Answer

Opposes the input signal

Question 61

61. The part of a transistor which is most heavily doped to produce large number of majority carriers is

Answer

Can be any of the above three

Question 62

62. If a signal passing through a gate is inhibited by sending a low into one of the inputs, and the output is HIGH, the gate is a(n):

Question 63

63. Electrons present in p-type material due to thermal pair generation are

Answer

Dual carriers

Answer

Minority carriers

Answer

Majority carriers

Question 64

64. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of copper decreases while that of germanium increases

Answer

Resistance of both increases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of both decreases

Answer 178

Both A.C. & D.C.

Answer 179

None of these

Answer 180

Superconductor

Answer 181

First A and B

Answer 182

Remains constant

Answer 183

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer 184

Its conductivity increases with rise of temperature

Answer 185

It has low resistance to the current flow when forward biased

Answer 186

It has high resistance to the current flow when reverse biased

Answer 187

Increase the majority carrier current

Answer 188

Lowers the potential barrier

Answer 189

Raises the potential barrier

Answer 190

Increase the minority carrier current

Answer 191

Extra electrons

Answer 192

Missing electrons

Answer 193

Insulators

Answer 194

Semiconductors

Answer 195

Superconductors

Answer 196

Increased by forward biasing

Answer 197

Increased by reverse biasing

Answer 198

Is independent of voltage

Answer 199

Decreased by reverse biasing

Answer 200

Almost negligible

Answer 201

None of these

Answer 202

In reverse bias

Answer 203

In forward bias

Answer 204

None of these

Answer 205

Major current carriers are mobile negative ions

Answer 206

Major current carriers are mobile holes

Answer 207

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 208

Major current carriers are electrons

Answer 209

LOW inputs and a HIGH output

Answer 210

None of these

Answer 211

LOW inputs and a LOW output

Answer 212

HIGH inputs and a HIGH output

Answer 213

Low voltage to high voltage

Answer 214

High voltage to low voltage

Answer 215

A.C. into D.C.

Answer 216

D.C. into A.C.

Answer 217

Reversed biased

Answer 218

None of these

Answer 219

Zero biased

Answer 220

Forward biased

Answer 221

A.C. into D.C.

Answer 222

Low voltage to high voltage

Answer 223

D.C. into A.C.

Answer 224

High voltage to low voltage

Answer 225

None of these

Answer 226

Positively charged

Answer 227

Negative charged

Answer 228

Logic gates

Answer 229

Oscillator

Answer 230

Immobile ions

Answer 231

Mobile ions

Answer 232

Shear modulus

Answer 233

Bulk modulus

Answer 234

Young’s modulus

Answer 235

None of these

Answer 236

Any of the above depending on nature of transistor

Answer 237

That the base be heated

Answer 238

That the collector be heated

Answer 239

None of these

Answer 240

That the emitter be heated

Answer 241

Transistor

Answer 242

Enable it to Telerate higher voltage

Answer 243

Increase its electrical resistivity

Answer 244

Increases its electrical conductivity

Answer 245

Increase its life

Answer 246

Copper decreases and germanium increases

Answer 247

Copper increases and germanium decreases

Answer 248

Each of them decreases

Answer 249

Each of them increases

Answer 250

Equal number of free electrons and holes

Answer 251

Large number of free electrons and few holes

Answer 252

Large number of holes and few electrons

Answer 253

Large number of holes and electrons

Answer 254

Potential is maximum

Answer 255

Electric field is zero

Answer 256

Electric field is maximum

Answer 257

Potential is zero

Answer 258

Thickness of collector

Answer 259

Very small as compared to the thickness of emitter and collector

Answer 260

Mean of thickness of emitter and collector

Answer 261

Thickness of emitter

Answer 262

It offers a very low open loop gain all of above

Answer 263

It offers a very high inputs resistance to the input current

Answer 264

None of these

Answer 265

It offers a very low output resistance

Answer 266

NAND gates

Answer 267

Point from north to south

Answer 268

Is located on the base

Answer 269

Is locate on the collector

Answer 270

Is located on the emitter

Answer 271

Virtual input

Answer 272

Reference voltage on the other

Answer 273

Non-inverting voltage at output

Answer 274

None of these

Answer 275

10¯⁶ cm

Answer 276

10¯¹² cm

Answer 277

p-type conductor

Answer 278

n-type conductor

Answer 279

n-type semiconductor

Answer 280

p-type semiconductor

Answer 281

Multivibrator

Answer 282

Oscillator

Answer 283

Crystalline solids

Answer 284

Glassy solids

Answer 285

Polymeric solids

Answer 286

Amorphous solids

Answer 287

Conduction band is filled with electrons and valence band is empty

Answer 288

Conduction band is partially filled with electrons

Answer 289

Conduction band is empty and valence band is filled with electrons

Answer 290

Valence band is partially filled with electrons

Answer 291

P-type material

Answer 292

Oscillator

Answer 293

None of these

Answer 294

Require more current

Answer 295

Works efficiently

Answer 296

any of above

Answer 297

None of these

Answer 298

Only half cycle is used

Answer 299

Current flows in pulses

Answer 300

Current flows in one directions

Answer 301

Oscillator

Answer 302

None of these

Answer 303

Light display

Answer 304

Detection of light

Answer 305

Emission of light

Answer 306

Extra electrons

Answer 307

Missing electrons

Answer 308

Holes move from base to collector

Answer 309

Negative charge moves from collector to base

Answer 310

Holes move from emitter to base

Answer 311

Negative charge moves from emitter to base

Answer 312

Input and out signals are in phase

Answer 313

Input and out signals are not in phase

Answer 314

May be in phase or not

Answer 315

None of these

Answer 316

All of these

Answer 317

Crystal lattice

Answer 318

Forward biases

Answer 319

None of these

Answer 320

Reverse biased

Answer 321

Several mega ohms

Answer 322

From pure Ge crystal

Answer 323

From pure Si crystal

Answer 324

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 325

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 326

Both are at the same potential

Answer 327

Both are at the high potential

Answer 328

Non-inverting terminal is at high potential

Answer 329

Inverting terminal is at high potential

Answer 330

Band levels

Answer 331

Hidden energy states

Answer 332

Forbidden energy states

Answer 333

None of these

Answer 334

Large number of holes and electrons

Answer 335

Equal number of free electrons and holes

Answer 336

Large number of holes and few electrons

Answer 337

Large number of free electrons and few holes

Answer 338

Both junctions are reverse biased

Answer 339

No bias voltages are required

Answer 340

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 341

Both junctions are forward biased

Answer 342

Major current carriers are mobile holes

Answer 343

Major current carriers are mobile negative ions

Answer 344

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 345

Major current carriers are electrons

Answer 346

Increase the minority carrier current

Answer 347

Increases the majority carrier current

Answer 348

Raises the potential barrier

Answer 349

Lowers the potential barrier

Answer 350

Not a universal gate

Answer 351

A basic gate

Answer 352

A basic universal gate

Answer 353

A universal gate

Answer 354

Almost zero

Answer 355

None of these

Answer 356

Superconductors

Answer 357

Insulators

Answer 358

Semiconductors

Answer 359

Remain fixed

Answer 360

Decreases slowly

Answer 361

Increases slowly

Answer 362

Suddenly increases

Answer 363

Increased by reverse biasing

Answer 364

Is independent of voltage

Answer 365

Increased by forward biasing

Answer 366

Decreased by reverse biasing

Answer 367

Phosphorus

Answer 368

Diffusion of charges

Answer 369

Depends upon the nature of material

Answer 370

Drift of charges

Answer 371

Both drift and diffusion of charges

Answer 372

Semiconductor

Answer 373

Superconductor

Answer 374

None of these

Answer 375

None of these

Answer 376

Common base configuration

Answer 377

Common emitter configuration

Answer 378

Common collector configuration

Answer 379

Compress ional stress

Answer 380

None of these

Answer 381

Tensile stress

Answer 382

Shear stress

Answer 383

Negative charge moves from collector to base

Answer 384

Holes move from base to collector

Answer 385

Negative charge moves from emitter to base

Answer 386

Holes move from emitter to base

Answer 387

Number of holes increases while that of holes decreases

Answer 388

Number of electrons and holes increases equally

Answer 389

Number of electrons and holes remains same

Answer 390

Number of electrons increases while that of holes decreases

Answer 391

Less than electrons

Answer 392

Greater than electrons

Answer 393

Equal to electrons

Answer 394

Solar cells

Answer 395

The photo diodes

Answer 396

The light emitting diode

Answer 397

The switch

Answer 398

A rectifier

Answer 399

An amplifier

Answer 400

Filtering circuit

Answer 401

Increase the minority carrier current

Answer 402

Increases the majority carrier current

Answer 403

Raises the potential barrier

Answer 404

Lowers the potential barrier

Answer 405

Decreases and then increases

Answer 406

Remains unchanged

Answer 407

Triode vacuum tube

Answer 408

Step down transformer

Answer 409

Step up transformer

Answer 410

Three diodes in common

Answer 411

None of these

Answer 412

N-type conductor

Answer 413

None of these

Answer 414

N-type semiconductor

Answer 415

P-type semiconductor

Answer 416

Electrons move from base to emitter

Answer 417

Holes move from base to emitter

Answer 418

Electrons move from collector to base

Answer 419

Electrons move from emitter to base

Answer 420

None of these

Answer 421

None of these

Answer 422

Free electrons

Answer 423

None of these

Answer 424

Valence electrons

Answer 425

Tightly bound electrons

Answer 426

Missing of electrons

Answer 427

Extra electrons

Answer 428

Remains same

Answer 429

Bulk’s modulus

Answer 430

Modulus of electricity

Answer 431

Young’s modulus

Answer 432

None of these

Answer 433

Increase its electrical resistivity

Answer 434

Increase its life

Answer 435

Increase its electrical conductivity

Answer 436

Enable it to Telerate higher voltage

Answer 437

P-type material

Answer 438

Super conductor

Answer 439

N-type material

Answer 440

Semiconductor

Answer 441

Can be any of the above three

Answer 442

P-type material

Answer 443

Switching device

Answer 444

Comparator

Answer 445

INVERTER gate

Answer 446

Either emitter or collector

Answer 447

All of these

Answer 448

Amplification

Answer 449

Rectification

Answer 450

Magnification

Answer 451

Transformers

Answer 452

Electric motors

Answer 453

Electric generations

Answer 454

None of these

Answer 455

The number of mobile holes exceeds the number of acceptors

Answer 456

Major carrier is mobile negative ions

Answer 457

Major current carrier is electrons

Answer 458

Major carrier is mobile holes

Answer 459

Holes and electrons

Answer 460

Electrons and holes

Answer 461

Electrons and protons

Answer 462

Protons and electrons

Answer 463

Tetravalent

Answer 464

Pentavalent

Answer 465

p-carriers only

Answer 466

p-carriers and n-carriers respectively

Answer 467

n-carriers only

Answer 468

n-carriers and p-carriers respectively

Answer 469

All of above

Answer 470

Semiconductors

Answer 471

Conductors

Answer 472

Superconductors

Answer 473

Insulators

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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