Physics Electronics Online Mcqs Test

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Question 1

1. In Germanium crystal, impurity donor elements have valiancy

Question 2

2. With negative feedback, the returning signal:

Answer

Is proportional to output current

Answer

Aids the input signal

Answer

Opposes the input signal

Answer

Is proportional to differential voltage gain

Question 3

3. An OP-AMP comparator is a circuit that compares the signal voltage on one of its inputs with a _

Answer

Non-inverting voltage at output

Answer

Reference voltage on the other

Answer

Virtual input

Question 4

4. A device for converting an alternating current into a pulsating from or direct current is known as

Answer

Oscillator

Answer

None of these

Question 5

5. A junction between p-type material and n-type material is called as

Answer

Transistor

Question 6

6. The semiconductor diode can be used as a rectifier because _

Answer

It has low resistance to the current flow when forward biased & high resistance when reverse biased

Answer

Its conductivity increases with rise of temperature

Answer

It has high resistance to the current flow when reverse biased

Answer

It has low resistance to the current flow when forward biased

Question 7

7. A diode as a rectifier converts:

Answer

D.C. into A.C.

Answer

High voltage to low voltage

Answer

A.C. into D.C.

Answer

Low voltage to high voltage

Question 8

8. The energy band gap is maximum in

Answer

Insulators

Answer

Superconductors

Answer

Semiconductors

Question 9

9. The electrical circuit used to bet smooth DC output from a rectifier circuit is called

Answer

Logic gates

Answer

Oscillator

Question 10

10. When NPN transistor is used as an amplifier

Answer

Holes move from base to emitter

Answer

Electrons move from collector to base

Answer

Electrons move from base to emitter

Answer

Electrons move from emitter to base

Question 11

11. When a pentavalent material like As, is added to tetravalent material l.e. Ge, we get a

Answer

N-type material

Answer

Semiconductor

Answer

Super conductor

Answer

P-type material

Question 12

12. A diode as a rectifier converts:

Answer

D.C. into A.C.

Answer

A.C. into D.C.

Answer

Low voltage to high voltage

Answer

High voltage to low voltage

Question 13

13. The device or circuit used for conversion of A.C. into D.C. is called

Answer

Filtering circuit

Answer

A rectifier

Answer

An amplifier

Question 14

14. p-type crystal of a p-n junction diode is connected to a positive terminal of battery and n-type crystal connected to negative terminal of battery

Answer

Diode is reverse biased

Answer

Potential barrier in depletion layer increases

Answer

Diode is forward based

Answer

Potential barrier in depletion layer remains unchanged

Question 15

15. Non-inverting amplifier circuits have

Answer

None of these

Answer

A very low input impedance

Answer

A very high input impedance

Answer

A low output impedance

Question 16

16. The forward resistance of the diode is

Answer

None of these

Question 17

17. The measure of deformation of a solid when stress is applied to it is called

Answer

None of these

Question 18

18. In between two consecutive permissible energy bands, there is a range of energy states which cannot be occupied by electrons. These are called

Answer

Band levels

Answer

Forbidden energy states

Answer

None of these

Answer

Hidden energy states

Question 19

19. If positive end of battery is connected to p-side and negative end of battery is connected to n-side of diode then

Answer

Diode is forward biased

Answer

Diode is neutralized

Answer

None of these

Answer

Diode is reverse biased

Question 20

20. A signal applied at the non-inverting input, of an O.P that appears after amplification at the output terminal, with

Answer

90° Phase shift

Answer

No Phase shift

Answer

180° Phase shift

Answer

120° Phase shift

Question 21

21. When an alternating accelerating field is applied to a charge it produces

Answer

Electromagnetic Waves

Answer

Transverse Waves

Answer

Gamma Rays

Question 22

22. The operation of a transistor requires

Answer

That the base be heated

Answer

That the emitter be heated

Answer

That the collector be heated

Answer

None of these

Question 23

23. Reverse bias applied on a junction diode

Answer

Lowers the potential barrier

Answer

Increases the majority carrier current

Answer

Increase the minority carrier current

Answer

Raises the potential barrier

Question 24

24. The simplest type of rectification known as half wave rectification is obtained by

Answer

Using a Coolidge tube

Answer

Suppressing the harmonics in A.C voltage

Answer

Using a transistor

Answer

Suppressing half wave of A.C supply by using diode

Question 25

25. When a semiconductor is continuously heated, then value of its resistance

Answer

Decreases and then increases

Answer

Remains unchanged

Question 26

26. When a strength changes the length of a body, it is called

Answer

Compress ional stress

Answer

Tensile stress

Answer

None of these

Answer

Shear stress

Question 27

27. Suitable impurities are added to a semiconductor depending on its use. This is due to

Answer

Increase its electrical resistivity

Answer

Increase its life

Answer

Enable it to Telerate higher voltage

Answer

Increase its electrical conductivity

Question 28

28. In forward bias, the width of potential barrier in a p-n junction diode

Answer

First A and B

Answer

Remains constant

Question 29

29. When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Question 30

30. The output will be a LOW for any case when one or more inputs are zero in a(n):

Question 31

31. In junction diode, the holes are because of:

Answer

Extra electrons

Answer

Missing electrons

Question 32

32. When we apply reverse bias to a junction diode, it

Answer

Increase the majority carrier current

Answer

Lowers the potential barrier

Answer

Raises the potential barrier

Answer

Increase the minority carrier current

Question 33

33. In half wave rectification

Answer

Only half cycle is used

Answer

None of these

Answer

Current flows in one directions

Answer

Current flows in pulses

Question 34

34. In junction diode, the holes are because of:

Answer

Missing electrons

Answer

Extra electrons

Question 35

35. In p-n-p transistor the collector current is

Answer

Greater than emitter current

Answer

Slightly less than emitter current

Answer

Any of above

Answer

Equal to emitter current

Question 36

36. The width of a depletion layer in a p-n junction is

Answer

Decreased by reverse biasing

Answer

Is independent of voltage

Answer

Increased by forward biasing

Answer

Increased by reverse biasing

Question 37

37. Exclusive-OR (XOR) logic gates can be constructed from what other logic gates?

Answer

AND gates, OR gates, and NOT gates

Answer

Or gates and NOT gates

Answer

OR gates only

Answer

AND gates and NOT gates

Question 38

38. At room temperature, a p-type semi-conductor has

Answer

Large number of holes and electrons

Answer

Large number of holes and few electrons

Answer

Large number of free electrons and few holes

Answer

Equal number of free electrons and holes

Question 39

39. The ratio β shows the

Answer

Input resistance

Answer

Current gain

Answer

Voltage gain

Answer

None of these

Question 40

40. The least doped region in a transistor is

Answer

Either emitter or collector

Question 41

41. At room temperature, a p-type semi-conductor has

Answer

Equal number of free electrons and holes

Answer

Large number of holes and few electrons

Answer

Large number of free electrons and few holes

Answer

Large number of holes and electrons

Question 42

42. The especially designed semiconductor diodes used as indicator lamps in electronic circuits are

Answer

The switch

Answer

The photo diodes

Answer

Solar cells

Answer

The light emitting diode

Question 43

43. In insulators

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Answer

Conduction band is filled with electrons and valence bad is empty

Answer

Valence band is partially filled with electrons

Question 44

44. When boron is added as an impurity to silicon, the resulting material is:

Answer

p-type conductor

Answer

n-type semiconductor

Answer

p-type semiconductor

Answer

n-type conductor

Question 45

45. The electromagnetic waves emitted by the LC circuit of areal to a transmitting station are of

Answer

Constant amplitude

Answer

Unit amplitude

Answer

Variable amplitude

Answer

Zero amplitude

Question 46

46. N-type crystal is

Answer

None of these

Answer

Positively charged

Answer

Negative charged

Question 47

47. Photodiode is used for

Answer

Emission of light

Answer

None of these

Answer

Detection of light

Answer

Light display

Question 48

48. An OP-AMPs can amplify

Answer

None of these

Answer

Both A.C. & D.C.

Question 49

49. A device which converts an alternating current to direct current is called

Answer

Oscillator

Answer

P-type material

Question 50

50. In the middle of the depletion layer of a reverse-biased p-n junction, the

Answer

Electric field is maximum

Answer

Potential is zero

Answer

Electric field is zero

Answer

Potential is maximum

Question 51

51. When the conductivity of a semiconductor is only due, to breaking of covalent bonds, the semiconductor is called

Question 52

52. In forward bias the width of potential barrier

Answer

Remains same

Question 53

53. The basic logic gate whose output is the complement of the input is the:

Answer

INVERTER gate

Answer

Comparator

Question 54

54. In a p-type semiconductor germanium is doped with:

Answer

All of these

Question 55

55. Copper and germanium are cooled to 70 K from room temperature, then

Answer

Resistance of both increases

Answer

Resistance of both decreases

Answer

Resistance of copper increases while that of germanium decreases

Answer

Resistance of copper decreases while that of germanium increases

Question 56

56. Symbol represents

Question 57

57. In a PN junction

Answer

High potential at N side and low potential at P side

Answer

P and N both are at same potential

Answer

High potential at P side and low potential at N side

Answer

Undetermined

Question 58

58. The whole structure obtained by the repetition of unit cell is known as

Answer

Crystal lattice

Answer

All of these

Question 59

59. In insulators

Answer

Conduction band is filled with electrons and valence band is empty

Answer

Valence band is partially filled with electrons

Answer

Conduction band is partially filled with electrons

Answer

Conduction band is empty and valence band is filled with electrons

Question 60

60. In the p-type semi-conductor the majority and minority charge carriers are respectively

Answer

Protons and electrons

Answer

Electrons and holes

Answer

Electrons and protons

Answer

Holes and electrons

Question 61

61. In semiconductors at a room temperature

Answer

The conduction band is completely empty

Answer

The valence band is completely filled and the conduction band is partially filled

Answer

The valence band is partially empty and the conduction band is partially filled

Answer

The valence band is completely filled

Question 62

62. In comma emitter amplifier (l₀/lE) = 0.98, then current gain is

Question 63

63. The gain A of the amplifier is of the order of

Answer

Man hundred

Answer

None of these

Question 64

64. The materials in which valence band and conduction band overlap are called

Answer

Semiconductors

Answer

Insulators

Answer

Superconductors

Answer

Conductors

Answer 188

p-type semiconductor

Answer 189

p-type conductor

Answer 190

n-type conductor

Answer 191

n-type semiconductor

Answer 192

None of these

Answer 193

Full wave rectifier

Answer 194

Half wave rectifier

Answer 195

Logic gates

Answer 196

Oscillator

Answer 197

Semiconductor

Answer 198

None of these

Answer 199

Chemical energy

Answer 200

Heat energy

Answer 201

Light energy

Answer 202

None of these

Answer 203

Phosphorus

Answer 204

When temperature varies

Answer 205

Under forward bias

Answer 206

Under reverse bias

Answer 207

During the manufacturing process

Answer 208

Major current carriers are electrons

Answer 209

Major current carriers are mobile holes

Answer 210

Major current carriers are mobile negative ions

Answer 211

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 212

None of these

Answer 213

Phosphorus

Answer 214

None of these

Answer 215

Nanosecond

Answer 216

Microsecond

Answer 217

Millisecond

Answer 218

Enable it to Telerate higher voltage

Answer 219

Increase its electrical resistivity

Answer 220

Increase its life

Answer 221

Increases its electrical conductivity

Answer 222

Each of them decreases

Answer 223

Copper decreases and germanium increases

Answer 224

Copper increases and germanium decreases

Answer 225

Each of them increases

Answer 226

Holes move from emitter be base

Answer 227

Holes move from base to emitter

Answer 228

Holes move from emitter to base

Answer 229

Electrons move from base to collector

Answer 230

The valence band is completely filled

Answer 231

The conduction band is completely empty

Answer 232

The valence band is completely filled and the conduction band is partially filled

Answer 233

The valence band is partially empty and the conduction band is partially filled

Answer 234

Number of electrons and holes remains same

Answer 235

Number of electrons and holes increases equally

Answer 236

Number of electrons increases while that of holes decreases

Answer 237

Number of holes increases while that of holes decreases

Answer 238

Both collector and emitter are negative with respect to the base

Answer 239

Collector is positive and emitter is negative with respect to the base

Answer 240

Both collector and emitter are positive with respect to the base

Answer 241

Collector is positive and emitter is at negative potential as the base

Answer 242

Young’s modulus

Answer 243

Shear modulus

Answer 244

None of these

Answer 245

Bulk modulus

Answer 246

None of these

Answer 247

Input and out signals are not in phase

Answer 248

May be in phase or not

Answer 249

Input and out signals are in phase

Answer 250

may be p-type or n-type

Answer 251

None of these

Answer 252

Major carrier is mobile holes

Answer 253

Major current carrier is electrons

Answer 254

Major carrier is mobile negative ions

Answer 255

The number of mobile holes exceeds the number of acceptors

Answer 256

No bias voltages are required

Answer 257

The emitter base junction is forward biased and the base collector junction is reverse biased

Answer 258

Both junctions are reverse biased

Answer 259

Both junctions are forward biased

Answer 260

10¯⁶ cm

Answer 261

10¯¹² cm

Answer 262

Crystalline solids

Answer 263

Polymeric solids

Answer 264

Amorphous solids

Answer 265

Glassy solids

Answer 266

Any of above

Answer 267

Logic gates

Answer 268

Automatic switching

Answer 269

Detection of visible and invisible radiations

Answer 270

None of these

Answer 271

n-carriers only

Answer 272

n-carriers and p-carriers respectively

Answer 273

p-carriers only

Answer 274

p-carriers and n-carriers respectively

Answer 275

Can be any of the above three

Answer 276

If either or both inputs are 1

Answer 277

Only if both inputs are 1

Answer 278

If both inputs are zero

Answer 279

If either input is zero

Answer 280

None of these

Answer 281

LOW inputs and a LOW output

Answer 282

LOW inputs and a HIGH output

Answer 283

HIGH inputs and a HIGH output

Answer 284

None of these

Answer 285

any of above

Answer 286

All inputs are LOW

Answer 287

At least one input is HIGH

Answer 288

All inputs are HIGH

Answer 289

At least one input is LOW

Answer 290

Lowers the potential barrier

Answer 291

Raises the potential barrier

Answer 292

Increases the majority carrier current

Answer 293

Increase the minority carrier current

Answer 294

P-type material

Answer 295

Switching device

Answer 296

Valence electrons

Answer 297

None of these

Answer 298

Free electrons

Answer 299

Tightly bound electrons

Answer 300

Diode design

Answer 301

Temperature

Answer 302

Forward bias

Answer 303

Doping density

Answer 304

Missing of electrons

Answer 305

Extra electrons

Answer 306

It offers a very high inputs resistance to the input current

Answer 307

It offers a very low output resistance

Answer 308

None of these

Answer 309

It offers a very low open loop gain all of above

Answer 310

Mean of thickness of emitter and collector

Answer 311

Very small as compared to the thickness of emitter and collector

Answer 312

Thickness of collector

Answer 313

Thickness of emitter

Answer 314

Holes move from emitter to base

Answer 315

Holes move from emitter to base

Answer 316

Electrons move from base to collector

Answer 317

Holes move from base to emitter

Answer 318

From pure Ge crystal

Answer 319

From pure Si crystal

Answer 320

When a Ge crystal is doped with an impurity containing 5 valence electrons

Answer 321

When a Ge crystal is doped with an impurity containing 3 valence electrons

Answer 322

Tetravalent

Answer 323

Pentavalent

Answer 324

Greater than one

Answer 325

Equal to one

Answer 326

Less than one

Answer 327

Young’s modulus

Answer 328

None of these

Answer 329

Bulk’s modulus

Answer 330

Modulus of electricity

Answer 331

None of these

Answer 332

NAND gates

Answer 333

Drift of charges

Answer 334

Depends upon the nature of material

Answer 335

Both drift and diffusion of charges

Answer 336

Diffusion of charges

Answer 337

Phosphorus

Answer 338

Immobile ions

Answer 339

Mobile ions

Answer 340

Increased by forward biasing

Answer 341

Decreased by reverse biasing

Answer 342

Is independent of voltage

Answer 343

Increased by reverse biasing

Answer 344

Electric field is zero

Answer 345

Electric field is maximum

Answer 346

Potential is zero

Answer 347

Potential is maximum

Answer 348

Dual carriers

Answer 349

Minority carriers

Answer 350

Majority carriers

Answer 351

Depletion region

Answer 352

None of these

Answer 353

Diffusion region

Answer 354

Charged region

Answer 355

Greater than electrons

Answer 356

Less than electrons

Answer 357

Equal to electrons

Answer 358

Superconductor

Answer 359

Semiconductor

Answer 360

None of these

Answer 361

Several mega ohms

Answer 362

Is located on the emitter

Answer 363

Point from north to south

Answer 364

Is located on the base

Answer 365

Is locate on the collector

Answer 366

Four PN-junctions

Answer 367

Three PN-junctions

Answer 368

Two PN-junctions

Answer 369

One PN-junction

Answer 370

Can be any of the above three

Answer 371

Each of them decreases

Answer 372

Copper decreases and germanium increases

Answer 373

Each of them increases

Answer 374

Copper increases and germanium decreases

Answer 375

Insulators

Answer 376

Semiconductors

Answer 377

Superconductors

Answer 378

Multivibrator

Answer 379

Oscillator

Answer 380

All of above

Answer 381

Off switch

Answer 382

Almost negligible

Answer 383

Remain fixed

Answer 384

Suddenly increases

Answer 385

Increases slowly

Answer 386

Decreases slowly

Answer 387

Common base configuration

Answer 388

Common collector configuration

Answer 389

None of these

Answer 390

Common emitter configuration

Answer 391

None of these

Answer 392

In forward bias

Answer 393

In reverse bias

Answer 394

P-type semiconductor

Answer 395

N-type semiconductor

Answer 396

None of these

Answer 397

N-type conductor

Answer 398

Magnification

Answer 399

All of these

Answer 400

Rectification

Answer 401

Amplification

Answer 402

Electric generations

Answer 403

Transformers

Answer 404

Electric motors

Answer 405

Forward current exceeds certain value

Answer 406

Reverse bias exceeds certain value

Answer 407

Forward bias exceeds certain value

Answer 408

Potential barrier is reduced to zero

Answer 409

A basic gate

Answer 410

Not a universal gate

Answer 411

A universal gate

Answer 412

A basic universal gate

Answer 413

Both are at the high potential

Answer 414

Inverting terminal is at high potential

Answer 415

Non-inverting terminal is at high potential

Answer 416

Both are at the same potential

Answer 417

Negative charge moves from collector to base

Answer 418

Holes move from emitter to base

Answer 419

Holes move from base to collector

Answer 420

Negative charge moves from emitter to base

Answer 421

Superconductor

Answer 422

Reversed biased

Answer 423

Forward biased

Answer 424

None of these

Answer 425

Zero biased

Answer 426

None of these

Answer 427

Low degree resistor

Answer 428

Low degree radiations

Answer 429

Light dependent resistance

Answer 430

Major current carriers are mobile negative ions

Answer 431

Major current carriers are electrons

Answer 432

Major current carriers are mobile holes

Answer 433

The no. of mobile holes exceeds the no. of mobile acceptors

Answer 434

Oscillator

Answer 435

Phosphorus

Answer 436

None of these

Answer 437

Holes move from base to collector

Answer 438

Holes move from emitter to base

Answer 439

Negative charge moves from emitter to base

Answer 440

Negative charge moves from collector to base

Answer 441

Free electrons in n-type and p-type

Answer 442

Holes in n-type and p-type

Answer 443

Holes in n-type and free electrons in p-type

Answer 444

Free electrons in n-type and holes in p-type

Answer 445

Semiconductor

Answer 446

Triode vacuum tube

Answer 447

Step down transformer

Answer 448

Step up transformer

Answer 449

Three diodes in common

Answer 450

None of these

Answer 451

Resistor is used

Answer 452

Solvent is used

Answer 453

Capacitor is used

Answer 454

91 x 10 Nm¯²

Answer 455

70 x 10 Nm¯²

Answer 456

110 Nm¯²

Answer 457

None of these

Answer 458

None of these

Answer 459

Remains unchanged

Answer 460

Decreases and then increases

Answer 461

Works efficiently

Answer 462

Require more current

Answer 463

None of these

Answer 464

Reverse biased

Answer 465

Forward biases

Answer 466

None of these

Answer 467

Almost zero

Answer 468

None of these

Answer 469

Any of the above depending on nature of transistor

Answer 470

p-type semiconductor

Answer 471

p-type conductor

Answer 472

n-type conductor

Answer 473

n-type semiconductor

Total Questions:	177
Time Allowed:	60 Minutes
Total Marks:	177
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